ページ 189 - メモリ | 集積回路（IC）

部品番号	メーカ	説明	パッケージ	在庫	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IDT71P73804S200BQ	IDT, Integrated Device Technology Inc	IC SRAM 18MBIT 200MHZ 165CABGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - DDR2 Memory Size: 18Mb (1M x 18) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: 7.88ns Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-TBGA Supplier Device Package: 165-CABGA (13x15)	パッケージ: 165-TBGA	在庫5,056	SRAM	SRAM - DDR2	18Mb (1M x 18)	Parallel	200MHz	-	7.88ns	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	Surface Mount	165-TBGA	165-CABGA (13x15)
JS28F320J3D75B TR	Micron Technology Inc.	IC FLASH 32MBIT 75NS 56TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 32Mb (4M x 8, 2M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 75ns Access Time: 75ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 56-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 56-TSOP (14x20)	パッケージ: 56-TFSOP (0.724", 18.40mm Width)	在庫6,672	FLASH	FLASH - NOR	32Mb (4M x 8, 2M x 16)	Parallel	-	75ns	75ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	56-TFSOP (0.724", 18.40mm Width)	56-TSOP (14x20)
AT49F002T-70TI	Microchip Technology	IC FLASH 2MBIT 70NS 32TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 2Mb (256K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 50µs Access Time: 70ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 32-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 32-TSOP	パッケージ: 32-TFSOP (0.724", 18.40mm Width)	在庫7,136	FLASH	FLASH	2Mb (256K x 8)	Parallel	-	50µs	70ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TC)	Surface Mount	32-TFSOP (0.724", 18.40mm Width)	32-TSOP
7005S35GB	IDT, Integrated Device Technology Inc	IC SRAM 64KBIT 35NS 68PGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 64Kb (8K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 35ns Access Time: 35ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: 68-BPGA Supplier Device Package: 68-PGA (29.46x29.46)	パッケージ: 68-BPGA	在庫5,696	SRAM	SRAM - Dual Port, Asynchronous	64Kb (8K x 8)	Parallel	-	35ns	35ns	4.5 V ~ 5.5 V	-55°C ~ 125°C (TA)	Through Hole	68-BPGA	68-PGA (29.46x29.46)
70T3599S133BFGI8	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 133MHZ 208FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 4.5Mb (128K x 36) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 4.2ns Voltage - Supply: 2.4 V ~ 2.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 208-LFBGA Supplier Device Package: -	パッケージ: 208-LFBGA	在庫2,896	SRAM	SRAM - Dual Port, Synchronous	4.5Mb (128K x 36)	Parallel	133MHz	-	4.2ns	2.4 V ~ 2.6 V	-40°C ~ 85°C (TA)	Surface Mount	208-LFBGA	-
70V3579S6BF8	IDT, Integrated Device Technology Inc	IC SRAM 1.125MBIT 6NS 208CABGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 1.125Mb (32K x 36) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 6ns Voltage - Supply: 3.15 V ~ 3.45 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 208-LFBGA Supplier Device Package: 208-CABGA (15x15)	パッケージ: 208-LFBGA	在庫7,696	SRAM	SRAM - Dual Port, Synchronous	1.125Mb (32K x 36)	Parallel	-	-	6ns	3.15 V ~ 3.45 V	0°C ~ 70°C (TA)	Surface Mount	208-LFBGA	208-CABGA (15x15)
CY7C1426KV18-300BZCT	Cypress Semiconductor Corp	IC SRAM 36MBIT 300MHZ 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, QDR II Memory Size: 36Mb (4M x 9) Memory Interface: Parallel Clock Frequency: 300MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FBGA (13x15)	パッケージ: 165-LBGA	在庫7,776	SRAM	SRAM - Synchronous, QDR II	36Mb (4M x 9)	Parallel	300MHz	-	-	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	Surface Mount	165-LBGA	165-FBGA (13x15)
CY7C1069GE30-10ZSXIT	Cypress Semiconductor Corp	IC SRAM 16MBIT 10NS 54TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 16Mb (2M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10ns Voltage - Supply: 2.2 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Supplier Device Package: 54-TSOP II	パッケージ: 54-TSOP (0.400", 10.16mm Width)	在庫3,584	SRAM	SRAM - Asynchronous	16Mb (2M x 8)	Parallel	-	10ns	10ns	2.2 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	54-TSOP (0.400", 10.16mm Width)	54-TSOP II
MT48H32M16LFB4-6 AT:C	Micron Technology Inc.	IC SDRAM 512MBIT 167MHZ 54VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPSDR Memory Size: 512Mb (32M x 16) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: 15ns Access Time: 5ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 54-VFBGA Supplier Device Package: 54-VFBGA (8x8)	パッケージ: 54-VFBGA	在庫6,352	DRAM	SDRAM - Mobile LPSDR	512Mb (32M x 16)	Parallel	166MHz	15ns	5ns	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	54-VFBGA	54-VFBGA (8x8)
CAT24C128YIGT3JN	ON Semiconductor	IC EEPROM 128KBIT 400KHZ 8TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 128Kb (16K x 8) Memory Interface: I2C Clock Frequency: 1MHz Write Cycle Time - Word, Page: 5ms Access Time: 400ns Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	パッケージ: 8-TSSOP (0.173", 4.40mm Width)	在庫6,480	EEPROM	EEPROM	128Kb (16K x 8)	I2C	1MHz	5ms	400ns	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
AS4C32M16SA-7TCN	Alliance Memory, Inc.	IC SDRAM 512MBIT 143MHZ 54TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 512Mb (32M x 16) Memory Interface: Parallel Clock Frequency: 143MHz Write Cycle Time - Word, Page: 2ns Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Supplier Device Package: 54-TSOP II	パッケージ: 54-TSOP (0.400", 10.16mm Width)	在庫4,240	DRAM	SDRAM	512Mb (32M x 16)	Parallel	143MHz	2ns	5.4ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	54-TSOP (0.400", 10.16mm Width)	54-TSOP II
S34ML04G200TFI900	Cypress Semiconductor Corp	IC FLASH 4GBIT 25NS 48TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 4Gb (512M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	パッケージ: 48-TFSOP (0.724", 18.40mm Width)	在庫6,928	FLASH	FLASH - NAND	4Gb (512M x 8)	Parallel	-	25ns	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP I
M24M02-DRCS6TP/K	STMicroelectronics	IC EEPROM 2MBIT 1MHZ 8WLCSP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Mb (256K x 8) Memory Interface: I2C Clock Frequency: 1MHz Write Cycle Time - Word, Page: 10ms Access Time: 450ns Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-UBGA, WLCSP Supplier Device Package: 8-WLCSP (3.56x2.01)	パッケージ: 8-UBGA, WLCSP	在庫285,708	EEPROM	EEPROM	2Mb (256K x 8)	I2C	1MHz	10ms	450ns	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-UBGA, WLCSP	8-WLCSP (3.56x2.01)
AT45DB081E-SSHN-T	Adesto Technologies	IC FLASH 8MBIT 85MHZ 8SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 8Mb (264 Bytes x 4096 pages) Memory Interface: SPI Clock Frequency: 85MHz Write Cycle Time - Word, Page: 8µs, 4ms Access Time: - Voltage - Supply: 1.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫895,056	FLASH	FLASH	8Mb (264 Bytes x 4096 pages)	SPI	85MHz	8µs, 4ms	-	1.7 V ~ 3.6 V	-40°C ~ 85°C (TC)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IS43QR16256A-083RBL-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 4G PARALLEL 96TWBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 4Gb (256M x 16) Memory Interface: Parallel Clock Frequency: 1.2GHz Write Cycle Time - Word, Page: 15ns Access Time: - Voltage - Supply: 1.14 V ~ 1.26 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (9x13)	パッケージ: 96-TFBGA	在庫6,672	DRAM	SDRAM - DDR4	4Gb (256M x 16)	Parallel	1.2GHz	15ns	-	1.14 V ~ 1.26 V	0°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-TWBGA (9x13)
MT52L1G32D4PG-093 WT:B TR	Micron Technology Inc.	IC DRAM LPDDR3 32G FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR3 Memory Size: 32Gb (1G x 32) Memory Interface: - Clock Frequency: 1.066GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.2V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 178-VFBGA Supplier Device Package: 178-FBGA (12x11.5)	パッケージ: 178-VFBGA	在庫4,768	DRAM	SDRAM - Mobile LPDDR3	32Gb (1G x 32)	-	1.066GHz	-	-	1.2V	-30°C ~ 85°C (TC)	Surface Mount	178-VFBGA	178-FBGA (12x11.5)
MT53E384M32D2DS-053 WT:E TR	Micron Technology Inc.	IC DRAM LPDDR4 FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 12Gb (384M x 32) Memory Interface: - Clock Frequency: 1.866GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 0.6V, 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: - Supplier Device Package: -	パッケージ: -	在庫3,632	DRAM	SDRAM - Mobile LPDDR4	12Gb (384M x 32)	-	1.866GHz	-	-	0.6V, 1.1V	-30°C ~ 85°C (TC)	Surface Mount	-	-
25LC320AT-H/SN16KVAO	Microchip Technology	32K 4KX8 2.5V SER EE HIGH TEMP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 32Kb (4K x 8) Memory Interface: SPI Clock Frequency: 10MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 2.5V ~ 5.5V Operating Temperature: -40°C ~ 150°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫5,472	EEPROM	EEPROM	32Kb (4K x 8)	SPI	10MHz	5ms	-	2.5V ~ 5.5V	-40°C ~ 150°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
MT29F2T08GELCEJ4-QB-C	Micron Technology Inc.	QLC 2T 256GX8 VBGA DDP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
S29PL064J60BFID20E	Infineon Technologies	IC FLASH NOR 48FBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
NDQ86PFI-7NET-TR	Insignis Technology Corporation	DDR4 8GB X16 FBGA 7.5X13 (X1.2) Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 8Gbit Memory Interface: POD Clock Frequency: 1.333 GHz Write Cycle Time - Word, Page: 15ns Access Time: 18 ns Voltage - Supply: 1.14V ~ 1.26V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-FBGA (7.5x13)	パッケージ: -	Request a Quote	DRAM	SDRAM - DDR4	8Gbit	POD	1.333 GHz	15ns	18 ns	1.14V ~ 1.26V	0°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-FBGA (7.5x13)
S25FS064SAGMFV013	Infineon Technologies	STD SPI Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 64Mbit Memory Interface: SPI - Quad I/O, QPI Clock Frequency: 133 MHz Write Cycle Time - Word, Page: 2ms Access Time: 6 ns Voltage - Supply: 1.7V ~ 2V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Supplier Device Package: 8-SOIC	パッケージ: -	Request a Quote	FLASH	FLASH - NOR (SLC)	64Mbit	SPI - Quad I/O, QPI	133 MHz	2ms	6 ns	1.7V ~ 2V	-40°C ~ 105°C (TA)	Surface Mount	8-SOIC (0.209", 5.30mm Width)	8-SOIC
IS42S81600J-7TL	ISSI, Integrated Silicon Solution Inc	IC DRAM 128MBIT PAR 54TSOP II Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 128Mbit Memory Interface: LVTTL Clock Frequency: 143 MHz Write Cycle Time - Word, Page: - Access Time: 5.4 ns Voltage - Supply: 3V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Supplier Device Package: 54-TSOP II	パッケージ: -	Request a Quote	DRAM	SDRAM	128Mbit	LVTTL	143 MHz	-	5.4 ns	3V ~ 3.6V	0°C ~ 70°C (TA)	Surface Mount	54-TSOP (0.400", 10.16mm Width)	54-TSOP II
W25M161AVEIT	Winbond Electronics	IC FLASH 16MBIT SPI/QUAD 8WSON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND, FLASH - NOR Memory Size: 16Mbit (FLASH-NOR), 1Gbit (FLASH-NAND) Memory Interface: SPI - Quad I/O Clock Frequency: 133 MHz Write Cycle Time - Word, Page: 3ms Access Time: 6 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (8x6)	パッケージ: -	Request a Quote	FLASH	FLASH - NAND, FLASH - NOR	16Mbit (FLASH-NOR), 1Gbit (FLASH-NAND)	SPI - Quad I/O	133 MHz	3ms	6 ns	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (8x6)
MT29F2T08ELLEEG7-QB-E	Micron Technology Inc.	TLC 2T 256GX8 FBGA QDP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MT53E1G32D2FW-046-AAT-C	Micron Technology Inc.	IC DRAM 32GBIT 2.133GHZ 200VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4X Memory Size: 32Gbit Memory Interface: Parallel Clock Frequency: 2.133 GHz Write Cycle Time - Word, Page: 18ns Access Time: 3.5 ns Voltage - Supply: 1.06V ~ 1.17V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 200-TFBGA Supplier Device Package: 200-TFBGA (10x14.5)	パッケージ: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR4X	32Gbit	Parallel	2.133 GHz	18ns	3.5 ns	1.06V ~ 1.17V	-40°C ~ 105°C (TC)	Surface Mount	200-TFBGA	200-TFBGA (10x14.5)
CY62148CV30LL-70BAI	Cypress Semiconductor Corp	IC SRAM 4MBIT PARALLEL 36BGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 4Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70 ns Voltage - Supply: 2.7V ~ 3.3V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 36-TFBGA Supplier Device Package: 36-BGA (7x8.5)	パッケージ: -	Request a Quote	SRAM	SRAM - Asynchronous	4Mbit	Parallel	-	70ns	70 ns	2.7V ~ 3.3V	-40°C ~ 85°C (TA)	Surface Mount	36-TFBGA	36-BGA (7x8.5)
S70KS1283GABHA020	Infineon Technologies	IC PSRAM 128MBIT SPI/OCTL 24FBGA Memory Type: Volatile Memory Format: PSRAM Technology: PSRAM (Pseudo SRAM) Memory Size: 128Mbit Memory Interface: SPI - Octal I/O Clock Frequency: 200 MHz Write Cycle Time - Word, Page: 35ns Access Time: 35 ns Voltage - Supply: 1.7V ~ 2V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-VBGA Supplier Device Package: 24-FBGA (6x8)	パッケージ: -	Request a Quote	PSRAM	PSRAM (Pseudo SRAM)	128Mbit	SPI - Octal I/O	200 MHz	35ns	35 ns	1.7V ~ 2V	-40°C ~ 85°C (TA)	Surface Mount	24-VBGA	24-FBGA (6x8)

IDT71P73804S200BQ

IDT, Integrated Device Technology Inc

IC SRAM 18MBIT 200MHZ 165CABGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - DDR2
Memory Size: 18Mb (1M x 18)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: 7.88ns
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-CABGA (13x15)

パッケージ: 165-TBGA

在庫5,056

SRAM

SRAM - DDR2

18Mb (1M x 18)

Parallel

200MHz

-

7.88ns

1.7 V ~ 1.9 V

0°C ~ 70°C (TA)

Surface Mount

165-TBGA

165-CABGA (13x15)

JS28F320J3D75B TR

Micron Technology Inc.

IC FLASH 32MBIT 75NS 56TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 32Mb (4M x 8, 2M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 75ns
Access Time: 75ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 56-TSOP (14x20)

パッケージ: 56-TFSOP (0.724", 18.40mm Width)

在庫6,672

FLASH

FLASH - NOR

32Mb (4M x 8, 2M x 16)

Parallel

-

75ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

56-TFSOP (0.724", 18.40mm Width)

56-TSOP (14x20)

AT49F002T-70TI

Microchip Technology

IC FLASH 2MBIT 70NS 32TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 2Mb (256K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 50µs
Access Time: 70ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 32-TSOP

パッケージ: 32-TFSOP (0.724", 18.40mm Width)

在庫7,136

FLASH

2Mb (256K x 8)

Parallel

-

50µs

70ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TC)

Surface Mount

32-TFSOP (0.724", 18.40mm Width)

32-TSOP

7005S35GB

IDT, Integrated Device Technology Inc

IC SRAM 64KBIT 35NS 68PGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 64Kb (8K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 35ns
Access Time: 35ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 68-BPGA
Supplier Device Package: 68-PGA (29.46x29.46)

パッケージ: 68-BPGA

在庫5,696

SRAM

SRAM - Dual Port, Asynchronous

64Kb (8K x 8)

Parallel

-

35ns

4.5 V ~ 5.5 V

-55°C ~ 125°C (TA)

Through Hole

68-BPGA

68-PGA (29.46x29.46)

70T3599S133BFGI8

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 133MHZ 208FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 4.5Mb (128K x 36)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 4.2ns
Voltage - Supply: 2.4 V ~ 2.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 208-LFBGA
Supplier Device Package: -

パッケージ: 208-LFBGA

在庫2,896

SRAM

SRAM - Dual Port, Synchronous

4.5Mb (128K x 36)

Parallel

133MHz

-

4.2ns

2.4 V ~ 2.6 V

-40°C ~ 85°C (TA)

Surface Mount

208-LFBGA

-

70V3579S6BF8

IDT, Integrated Device Technology Inc

IC SRAM 1.125MBIT 6NS 208CABGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 1.125Mb (32K x 36)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 6ns
Voltage - Supply: 3.15 V ~ 3.45 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 208-LFBGA
Supplier Device Package: 208-CABGA (15x15)

パッケージ: 208-LFBGA

在庫7,696

SRAM

SRAM - Dual Port, Synchronous

1.125Mb (32K x 36)

Parallel

-

6ns

3.15 V ~ 3.45 V

0°C ~ 70°C (TA)

Surface Mount

208-LFBGA

208-CABGA (15x15)

CY7C1426KV18-300BZCT

Cypress Semiconductor Corp

IC SRAM 36MBIT 300MHZ 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QDR II
Memory Size: 36Mb (4M x 9)
Memory Interface: Parallel
Clock Frequency: 300MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (13x15)

パッケージ: 165-LBGA

在庫7,776

SRAM

SRAM - Synchronous, QDR II

36Mb (4M x 9)

Parallel

300MHz

-

1.7 V ~ 1.9 V

0°C ~ 70°C (TA)

Surface Mount

165-LBGA

165-FBGA (13x15)

CY7C1069GE30-10ZSXIT

Cypress Semiconductor Corp

IC SRAM 16MBIT 10NS 54TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Mb (2M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Voltage - Supply: 2.2 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II

パッケージ: 54-TSOP (0.400", 10.16mm Width)

在庫3,584

SRAM

SRAM - Asynchronous

16Mb (2M x 8)

Parallel

-

10ns

2.2 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

54-TSOP (0.400", 10.16mm Width)

54-TSOP II

MT48H32M16LFB4-6 AT:C

Micron Technology Inc.

IC SDRAM 512MBIT 167MHZ 54VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPSDR
Memory Size: 512Mb (32M x 16)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-VFBGA
Supplier Device Package: 54-VFBGA (8x8)

パッケージ: 54-VFBGA

在庫6,352

DRAM

SDRAM - Mobile LPSDR

512Mb (32M x 16)

Parallel

166MHz

15ns

5ns

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

54-VFBGA

54-VFBGA (8x8)

CAT24C128YIGT3JN

ON Semiconductor

IC EEPROM 128KBIT 400KHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 128Kb (16K x 8)
Memory Interface: I2C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 400ns
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

パッケージ: 8-TSSOP (0.173", 4.40mm Width)

在庫6,480

EEPROM

128Kb (16K x 8)

I2C

1MHz

5ms

400ns

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

AS4C32M16SA-7TCN

Alliance Memory, Inc.

IC SDRAM 512MBIT 143MHZ 54TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 512Mb (32M x 16)
Memory Interface: Parallel
Clock Frequency: 143MHz
Write Cycle Time - Word, Page: 2ns
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II

パッケージ: 54-TSOP (0.400", 10.16mm Width)

在庫4,240

DRAM

SDRAM

512Mb (32M x 16)

Parallel

143MHz

2ns

5.4ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

54-TSOP (0.400", 10.16mm Width)

54-TSOP II

S34ML04G200TFI900

Cypress Semiconductor Corp

IC FLASH 4GBIT 25NS 48TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 4Gb (512M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I

パッケージ: 48-TFSOP (0.724", 18.40mm Width)

在庫6,928

FLASH

FLASH - NAND

4Gb (512M x 8)

Parallel

-

25ns

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP I

M24M02-DRCS6TP/K

STMicroelectronics

IC EEPROM 2MBIT 1MHZ 8WLCSP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Mb (256K x 8)
Memory Interface: I2C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 10ms
Access Time: 450ns
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UBGA, WLCSP
Supplier Device Package: 8-WLCSP (3.56x2.01)

パッケージ: 8-UBGA, WLCSP

在庫285,708

EEPROM

2Mb (256K x 8)

I2C

1MHz

10ms

450ns

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-UBGA, WLCSP

8-WLCSP (3.56x2.01)

AT45DB081E-SSHN-T

Adesto Technologies

IC FLASH 8MBIT 85MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 8Mb (264 Bytes x 4096 pages)
Memory Interface: SPI
Clock Frequency: 85MHz
Write Cycle Time - Word, Page: 8µs, 4ms
Access Time: -
Voltage - Supply: 1.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫895,056

FLASH

8Mb (264 Bytes x 4096 pages)

SPI

85MHz

8µs, 4ms

-

1.7 V ~ 3.6 V

-40°C ~ 85°C (TC)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

IS43QR16256A-083RBL-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 4G PARALLEL 96TWBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 4Gb (256M x 16)
Memory Interface: Parallel
Clock Frequency: 1.2GHz
Write Cycle Time - Word, Page: 15ns
Access Time: -
Voltage - Supply: 1.14 V ~ 1.26 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)

パッケージ: 96-TFBGA

在庫6,672

DRAM

SDRAM - DDR4

4Gb (256M x 16)

Parallel

1.2GHz

15ns

-

1.14 V ~ 1.26 V

0°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-TWBGA (9x13)

MT52L1G32D4PG-093 WT:B TR

Micron Technology Inc.

IC DRAM LPDDR3 32G FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR3
Memory Size: 32Gb (1G x 32)
Memory Interface: -
Clock Frequency: 1.066GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.2V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 178-VFBGA
Supplier Device Package: 178-FBGA (12x11.5)

パッケージ: 178-VFBGA

在庫4,768

DRAM

SDRAM - Mobile LPDDR3

32Gb (1G x 32)

-

1.066GHz

-

1.2V

-30°C ~ 85°C (TC)

Surface Mount

178-VFBGA

178-FBGA (12x11.5)

MT53E384M32D2DS-053 WT:E TR

Micron Technology Inc.

IC DRAM LPDDR4 FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 12Gb (384M x 32)
Memory Interface: -
Clock Frequency: 1.866GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 0.6V, 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫3,632

DRAM

SDRAM - Mobile LPDDR4

12Gb (384M x 32)

-

1.866GHz

-

0.6V, 1.1V

-30°C ~ 85°C (TC)

Surface Mount

-

25LC320AT-H/SN16KVAO

Microchip Technology

32K 4KX8 2.5V SER EE HIGH TEMP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 32Kb (4K x 8)
Memory Interface: SPI
Clock Frequency: 10MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 150°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫5,472

EEPROM

32Kb (4K x 8)

SPI

10MHz

5ms

-

2.5V ~ 5.5V

-40°C ~ 150°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

MT29F2T08GELCEJ4-QB-C

Micron Technology Inc.

QLC 2T 256GX8 VBGA DDP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

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-

S29PL064J60BFID20E

Infineon Technologies

IC FLASH NOR 48FBGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

Request a Quote

-

NDQ86PFI-7NET-TR

Insignis Technology Corporation

DDR4 8GB X16 FBGA 7.5X13 (X1.2)

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 8Gbit
Memory Interface: POD
Clock Frequency: 1.333 GHz
Write Cycle Time - Word, Page: 15ns
Access Time: 18 ns
Voltage - Supply: 1.14V ~ 1.26V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-FBGA (7.5x13)

パッケージ: -

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DRAM

SDRAM - DDR4

8Gbit

POD

1.333 GHz

15ns

18 ns

1.14V ~ 1.26V

0°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-FBGA (7.5x13)

S25FS064SAGMFV013

Infineon Technologies

STD SPI

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 64Mbit
Memory Interface: SPI - Quad I/O, QPI
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: 2ms
Access Time: 6 ns
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SOIC

パッケージ: -

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FLASH

FLASH - NOR (SLC)

64Mbit

SPI - Quad I/O, QPI

133 MHz

2ms

6 ns

1.7V ~ 2V

-40°C ~ 105°C (TA)

Surface Mount

8-SOIC (0.209", 5.30mm Width)

8-SOIC

IS42S81600J-7TL

ISSI, Integrated Silicon Solution Inc

IC DRAM 128MBIT PAR 54TSOP II

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 128Mbit
Memory Interface: LVTTL
Clock Frequency: 143 MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4 ns
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II

パッケージ: -

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DRAM

SDRAM

128Mbit

LVTTL

143 MHz

-

5.4 ns

3V ~ 3.6V

0°C ~ 70°C (TA)

Surface Mount

54-TSOP (0.400", 10.16mm Width)

54-TSOP II

W25M161AVEIT

Winbond Electronics

IC FLASH 16MBIT SPI/QUAD 8WSON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND, FLASH - NOR
Memory Size: 16Mbit (FLASH-NOR), 1Gbit (FLASH-NAND)
Memory Interface: SPI - Quad I/O
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: 3ms
Access Time: 6 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (8x6)

パッケージ: -

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FLASH

FLASH - NAND, FLASH - NOR

16Mbit (FLASH-NOR), 1Gbit (FLASH-NAND)

SPI - Quad I/O

133 MHz

3ms

6 ns

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WSON (8x6)

MT29F2T08ELLEEG7-QB-E

Micron Technology Inc.

TLC 2T 256GX8 FBGA QDP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

Request a Quote

-

MT53E1G32D2FW-046-AAT-C

Micron Technology Inc.

IC DRAM 32GBIT 2.133GHZ 200VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4X
Memory Size: 32Gbit
Memory Interface: Parallel
Clock Frequency: 2.133 GHz
Write Cycle Time - Word, Page: 18ns
Access Time: 3.5 ns
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
Supplier Device Package: 200-TFBGA (10x14.5)

パッケージ: -

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DRAM

SDRAM - Mobile LPDDR4X

32Gbit

Parallel

2.133 GHz

18ns

3.5 ns

1.06V ~ 1.17V

-40°C ~ 105°C (TC)

Surface Mount

200-TFBGA

200-TFBGA (10x14.5)

CY62148CV30LL-70BAI

Cypress Semiconductor Corp

IC SRAM 4MBIT PARALLEL 36BGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70 ns
Voltage - Supply: 2.7V ~ 3.3V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 36-TFBGA
Supplier Device Package: 36-BGA (7x8.5)

パッケージ: -

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SRAM

SRAM - Asynchronous

4Mbit

Parallel

-

70ns

70 ns

2.7V ~ 3.3V

-40°C ~ 85°C (TA)

Surface Mount

36-TFBGA

36-BGA (7x8.5)

S70KS1283GABHA020

Infineon Technologies

IC PSRAM 128MBIT SPI/OCTL 24FBGA

Memory Type: Volatile
Memory Format: PSRAM
Technology: PSRAM (Pseudo SRAM)
Memory Size: 128Mbit
Memory Interface: SPI - Octal I/O
Clock Frequency: 200 MHz
Write Cycle Time - Word, Page: 35ns
Access Time: 35 ns
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Supplier Device Package: 24-FBGA (6x8)

パッケージ: -

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PSRAM

PSRAM (Pseudo SRAM)

128Mbit

SPI - Octal I/O

200 MHz

35ns

35 ns

1.7V ~ 2V

-40°C ~ 85°C (TA)

Surface Mount

24-VBGA

24-FBGA (6x8)