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レコード 62,144
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在庫
数量
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
AT25DF256-MAHN-Y
Adesto Technologies

IC FLASH 256KBIT 85MHZ 8UDFN

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 104MHz
  • Write Cycle Time - Word, Page: 8µs, 2.5ms
  • Access Time: -
  • Voltage - Supply: 1.65 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 8-UFDFN Exposed Pad
  • Supplier Device Package: 8-UDFN (2x3)
パッケージ: 8-UFDFN Exposed Pad
在庫5,936
FLASH
FLASH
256Kb (32K x 8)
SPI
104MHz
8µs, 2.5ms
-
1.65 V ~ 3.6 V
-40°C ~ 85°C (TC)
Surface Mount
8-UFDFN Exposed Pad
8-UDFN (2x3)
IS43LR32800F-6BL-TR
ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 166MHZ 90BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile DDR
  • Memory Size: 256Mb (8M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 5.5ns
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-TFBGA
  • Supplier Device Package: 90-TFBGA (8x13)
パッケージ: 90-TFBGA
在庫7,536
DRAM
SDRAM - Mobile DDR
256Mb (8M x 32)
Parallel
166MHz
15ns
5.5ns
1.7 V ~ 1.95 V
0°C ~ 70°C (TA)
Surface Mount
90-TFBGA
90-TFBGA (8x13)
MT42L128M32D1GU-18 WT:A TR
Micron Technology Inc.

IC SDRAM 4GBIT 533MHZ 134FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR2
  • Memory Size: 4Gb (128M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 533MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.14 V ~ 1.3 V
  • Operating Temperature: -30°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 134-WFBGA
  • Supplier Device Package: 134-FBGA (10x11.5)
パッケージ: 134-WFBGA
在庫5,248
DRAM
SDRAM - Mobile LPDDR2
4Gb (128M x 32)
Parallel
533MHz
-
-
1.14 V ~ 1.3 V
-30°C ~ 85°C (TC)
Surface Mount
134-WFBGA
134-FBGA (10x11.5)
hot W9864G6JH-5
Winbond Electronics

IC SDRAM 64MBIT 200MHZ 54TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 64Mb (4M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 54-TSOP II
パッケージ: 54-TSOP (0.400", 10.16mm Width)
在庫9,348
DRAM
SDRAM
64Mb (4M x 16)
Parallel
200MHz
-
5ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
54-TSOP (0.400", 10.16mm Width)
54-TSOP II
hot AT24C64BN-10SU-1.8
Microchip Technology

IC EEPROM 64KBIT 400KHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 64Kb (8K x 8)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 900ns
  • Voltage - Supply: 1.8 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
パッケージ: 8-SOIC (0.154", 3.90mm Width)
在庫26,088
EEPROM
EEPROM
64Kb (8K x 8)
I2C
400kHz
5ms
900ns
1.8 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
MT45W1MW16PAFA-70 WT TR
Micron Technology Inc.

IC PSRAM 16MBIT 70NS 48VFBGA

  • Memory Type: Volatile
  • Memory Format: PSRAM
  • Technology: PSRAM (Pseudo SRAM)
  • Memory Size: 16Mb (1M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -30°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 48-VFBGA
  • Supplier Device Package: 48-VFBGA (6x8)
パッケージ: 48-VFBGA
在庫5,904
PSRAM
PSRAM (Pseudo SRAM)
16Mb (1M x 16)
Parallel
-
70ns
70ns
1.7 V ~ 1.95 V
-30°C ~ 85°C (TC)
Surface Mount
48-VFBGA
48-VFBGA (6x8)
AT25128A-10PU-1.8
Microchip Technology

IC EEPROM 128KBIT 20MHZ 8DIP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 128Kb (16K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 20MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 1.8 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
パッケージ: 8-DIP (0.300", 7.62mm)
在庫5,776
EEPROM
EEPROM
128Kb (16K x 8)
SPI
20MHz
5ms
-
1.8 V ~ 5.5 V
-40°C ~ 85°C (TA)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
AT29BV010A-15JI
Microchip Technology

IC FLASH 1MBIT 150NS 32PLCC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 20ms
  • Access Time: 150ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 32-LCC (J-Lead)
  • Supplier Device Package: 32-PLCC
パッケージ: 32-LCC (J-Lead)
在庫7,200
FLASH
FLASH
1Mb (128K x 8)
Parallel
-
20ms
150ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TC)
Surface Mount
32-LCC (J-Lead)
32-PLCC
AT27C020-10JC
Microchip Technology

IC OTP 2MBIT 100NS 32PLCC

  • Memory Type: Non-Volatile
  • Memory Format: EPROM
  • Technology: EPROM - OTP
  • Memory Size: 2Mb (256K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 100ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 32-LCC (J-Lead)
  • Supplier Device Package: 32-PLCC
パッケージ: 32-LCC (J-Lead)
在庫3,120
EPROM
EPROM - OTP
2Mb (256K x 8)
Parallel
-
-
100ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TC)
Surface Mount
32-LCC (J-Lead)
32-PLCC
IS61VPS204836B-250B3LI-TR
ISSI, Integrated Silicon Solution Inc

IC SRAM 72MBIT 250MHZ 165BGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 72Mb (2M x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 250MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 2.8ns
  • Voltage - Supply: 2.375 V ~ 2.625 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-TBGA
  • Supplier Device Package: 165-TFBGA (13x15)
パッケージ: 165-TBGA
在庫3,200
SRAM
SRAM - Synchronous
72Mb (2M x 36)
Parallel
250MHz
-
2.8ns
2.375 V ~ 2.625 V
-40°C ~ 85°C (TA)
Surface Mount
165-TBGA
165-TFBGA (13x15)
CY7C1460AV33-167BZC
Cypress Semiconductor Corp

IC SRAM 36MBIT 167MHZ 165FBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 36Mb (1M x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 167MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3.4ns
  • Voltage - Supply: 3.135 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-LBGA
  • Supplier Device Package: 165-FBGA (15x17)
パッケージ: 165-LBGA
在庫5,136
SRAM
SRAM - Synchronous
36Mb (1M x 36)
Parallel
167MHz
-
3.4ns
3.135 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
165-LBGA
165-FBGA (15x17)
7008L15PFG8
IDT, Integrated Device Technology Inc

IC SRAM 512KBIT 15NS 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 512Kb (64K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 15ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
パッケージ: 100-LQFP
在庫7,408
SRAM
SRAM - Dual Port, Asynchronous
512Kb (64K x 8)
Parallel
-
15ns
15ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
70V07S35J
IDT, Integrated Device Technology Inc

IC SRAM 256KBIT 35NS 68PLCC

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 35ns
  • Access Time: 35ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 68-LCC (J-Lead)
  • Supplier Device Package: 68-PLCC (24.21x24.21)
パッケージ: 68-LCC (J-Lead)
在庫3,856
SRAM
SRAM - Dual Port, Asynchronous
256Kb (32K x 8)
Parallel
-
35ns
35ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
68-LCC (J-Lead)
68-PLCC (24.21x24.21)
7007L55J
IDT, Integrated Device Technology Inc

IC SRAM 256KBIT 55NS 68PLCC

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 55ns
  • Access Time: 55ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 68-LCC (J-Lead)
  • Supplier Device Package: 68-PLCC (24.21x24.21)
パッケージ: 68-LCC (J-Lead)
在庫6,528
SRAM
SRAM - Dual Port, Asynchronous
256Kb (32K x 8)
Parallel
-
55ns
55ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
68-LCC (J-Lead)
68-PLCC (24.21x24.21)
hot 93LC56A/SN
Microchip Technology

IC EEPROM 2KBIT 2MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 2Kb (256 x 8)
  • Memory Interface: SPI
  • Clock Frequency: 2MHz
  • Write Cycle Time - Word, Page: 6ms
  • Access Time: -
  • Voltage - Supply: 2.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
パッケージ: 8-SOIC (0.154", 3.90mm Width)
在庫4,928
EEPROM
EEPROM
2Kb (256 x 8)
SPI
2MHz
6ms
-
2.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
S-25C080A0I-J8T1U
SII Semiconductor Corporation

IC EEPROM 8KBIT 5MHZ 8SOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 8Kb (1K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 5MHz
  • Write Cycle Time - Word, Page: 4ms
  • Access Time: -
  • Voltage - Supply: 1.6 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
パッケージ: 8-SOIC (0.154", 3.90mm Width)
在庫5,328
EEPROM
EEPROM
8Kb (1K x 8)
SPI
5MHz
4ms
-
1.6 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
hot TC58NVG0S3HTA00
Toshiba Semiconductor and Storage

IC EEPROM 1GBIT 25NS 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM - NAND
  • Memory Size: 1Gb (128M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: 25ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP I
パッケージ: 48-TFSOP (0.724", 18.40mm Width)
在庫540,672
EEPROM
EEPROM - NAND
1Gb (128M x 8)
Parallel
-
25ns
25ns
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP I
CY14B108N-ZSP45XI
Cypress Semiconductor Corp

IC NVSRAM 8MBIT 45NS 54TSOP

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 8Mb (512K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 45ns
  • Access Time: 45ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 54-TSOP II
パッケージ: 54-TSOP (0.400", 10.16mm Width)
在庫5,424
NVSRAM
NVSRAM (Non-Volatile SRAM)
8Mb (512K x 16)
Parallel
-
45ns
45ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
54-TSOP (0.400", 10.16mm Width)
54-TSOP II
DS1230Y-150+
Maxim Integrated

IC NVSRAM 256KBIT 150NS 28EDIP

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 150ns
  • Access Time: 150ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 28-DIP Module (0.600", 15.24mm)
  • Supplier Device Package: 28-EDIP
パッケージ: 28-DIP Module (0.600", 15.24mm)
在庫8,040
NVSRAM
NVSRAM (Non-Volatile SRAM)
256Kb (32K x 8)
Parallel
-
150ns
150ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Through Hole
28-DIP Module (0.600", 15.24mm)
28-EDIP
S29CD016J0MDGH017
Cypress Semiconductor Corp

IC FLASH 16M PARALLEL 56MHZ DIE

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 16Mb (512K x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 56MHz
  • Write Cycle Time - Word, Page: 60ns
  • Access Time: 54ns
  • Voltage - Supply: 1.65 V ~ 2.75 V
  • Operating Temperature: -40°C ~ 145°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
パッケージ: Die
在庫5,376
FLASH
FLASH - NOR
16Mb (512K x 32)
Parallel
56MHz
60ns
54ns
1.65 V ~ 2.75 V
-40°C ~ 145°C (TA)
Surface Mount
Die
Die
IS41LV16100D-50KLI
ISSI, Integrated Silicon Solution Inc

IC DRAM 16M PARALLEL 42SOJ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: DRAM - EDO
  • Memory Size: 16Mb (1M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 25ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 42-BSOJ (0.400", 10.16mm Width)
  • Supplier Device Package: 42-SOJ
パッケージ: 42-BSOJ (0.400", 10.16mm Width)
在庫3,264
DRAM
DRAM - EDO
16Mb (1M x 16)
Parallel
-
-
25ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
42-BSOJ (0.400", 10.16mm Width)
42-SOJ
S29VS128RABBHI003
Cypress Semiconductor Corp

IC FLASH 128M PARALLEL 44FBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 128Mb (8M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 108MHz
  • Write Cycle Time - Word, Page: 60ns
  • Access Time: 80ns
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-VFBGA
  • Supplier Device Package: 44-FBGA (7.5x5)
パッケージ: 44-VFBGA
在庫2,640
FLASH
FLASH - NOR
128Mb (8M x 16)
Parallel
108MHz
60ns
80ns
1.7 V ~ 1.95 V
-40°C ~ 85°C (TA)
Surface Mount
44-VFBGA
44-FBGA (7.5x5)
AS4C32M32MD2A-25BIN
Alliance Memory, Inc.

IC DRAM 1G 32MX32 LPDDR2 134-BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR2
  • Memory Size: 1Gb (32M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 400MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: -
  • Voltage - Supply: 1.14V ~ 1.95V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 134-VFBGA
  • Supplier Device Package: 134-FBGA (10x11.5)
パッケージ: 134-VFBGA
在庫6,000
DRAM
SDRAM - Mobile LPDDR2
1Gb (32M x 32)
Parallel
400MHz
15ns
-
1.14V ~ 1.95V
-40°C ~ 85°C (TC)
Surface Mount
134-VFBGA
134-FBGA (10x11.5)
CY15B104QN-20LPXI
Cypress Semiconductor Corp

IC FRAM 4MBIT 20MHZ 8GQFN

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫6,240
-
-
-
-
-
-
-
-
-
-
-
-
MT62F1G16D1DS-023-IT-ES-B
Micron Technology Inc.

LPDDR5 16GBIT 16 315/315 TFBGA 1

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR5
  • Memory Size: 16Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 4.266 GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.05V
  • Operating Temperature: -40°C ~ 95°C
  • Mounting Type: Surface Mount
  • Package / Case: 200-WFBGA
  • Supplier Device Package: 200-WFBGA (10x14.5)
パッケージ: -
Request a Quote
DRAM
SDRAM - Mobile LPDDR5
16Gbit
Parallel
4.266 GHz
-
-
1.05V
-40°C ~ 95°C
Surface Mount
200-WFBGA
200-WFBGA (10x14.5)
MX29F800CTTJ-70Q
Macronix

MEMORY

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 8Mbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns, 300µs
  • Access Time: 70 ns
  • Voltage - Supply: 4.5V ~ 5.5V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP
パッケージ: -
Request a Quote
FLASH
FLASH - NOR (SLC)
8Mbit
Parallel
-
70ns, 300µs
70 ns
4.5V ~ 5.5V
-40°C ~ 105°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP
GD25LQ16EEAGR
GigaDevice Semiconductor (HK) Limited

IC FLASH 16MBIT SPI/QUAD 8USON

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 16Mbit
  • Memory Interface: SPI - Quad I/O, QPI
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: 100µs, 4ms
  • Access Time: 6 ns
  • Voltage - Supply: 1.65V ~ 2.1V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-XFDFN Exposed Pad
  • Supplier Device Package: 8-USON (3x2)
パッケージ: -
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FLASH
FLASH - NOR (SLC)
16Mbit
SPI - Quad I/O, QPI
133 MHz
100µs, 4ms
6 ns
1.65V ~ 2.1V
-40°C ~ 125°C (TA)
Surface Mount
8-XFDFN Exposed Pad
8-USON (3x2)
W25Q20EWSNSG
Winbond Electronics

IC FLASH 2MBIT SPI/QUAD 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 2Mbit
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 104 MHz
  • Write Cycle Time - Word, Page: 30µs, 800µs
  • Access Time: 6 ns
  • Voltage - Supply: 1.65V ~ 1.95V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
パッケージ: -
Request a Quote
FLASH
FLASH - NOR
2Mbit
SPI - Quad I/O
104 MHz
30µs, 800µs
6 ns
1.65V ~ 1.95V
-40°C ~ 125°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC