ページ 285 - メモリ | 集積回路（IC）

部品番号	メーカ	説明	パッケージ	在庫	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IS25WQ080-JKLE	ISSI, Integrated Silicon Solution Inc	IC FLASH 8MBIT 104MHZ 8WSON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 8Mb (1M x 8) Memory Interface: SPI Clock Frequency: 104MHz Write Cycle Time - Word, Page: 700µs Access Time: - Voltage - Supply: 1.65 V ~ 1.95 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (6x5)	パッケージ: 8-WDFN Exposed Pad	在庫4,256	FLASH	FLASH - NOR	8Mb (1M x 8)	SPI	104MHz	700µs	-	1.65 V ~ 1.95 V	-40°C ~ 105°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x5)
CY7C1352S-133AXI	Cypress Semiconductor Corp	IC SRAM 4.5MBIT 133MHZ 100LQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 4.5Mb (256K x 18) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 4ns Voltage - Supply: 3.135 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	パッケージ: 100-LQFP	在庫5,808	SRAM	SRAM - Synchronous	4.5Mb (256K x 18)	Parallel	133MHz	-	4ns	3.135 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
IDT71V35761S166BQI	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 166MHZ 165CABGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 4.5Mb (128K x 36) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: 3.5ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 165-TBGA Supplier Device Package: 165-CABGA (13x15)	パッケージ: 165-TBGA	在庫3,392	SRAM	SRAM - Synchronous	4.5Mb (128K x 36)	Parallel	166MHz	-	3.5ns	3.135 V ~ 3.465 V	-40°C ~ 85°C (TA)	Surface Mount	165-TBGA	165-CABGA (13x15)
CY7C1041BNV33L-12VXC	Cypress Semiconductor Corp	IC SRAM 4MBIT 12NS 44SOJ Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 4Mb (256K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 12ns Access Time: 12ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 44-BSOJ (0.400", 10.16mm Width) Supplier Device Package: 44-SOJ	パッケージ: 44-BSOJ (0.400", 10.16mm Width)	在庫5,632	SRAM	SRAM - Asynchronous	4Mb (256K x 16)	Parallel	-	12ns	12ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	44-BSOJ (0.400", 10.16mm Width)	44-SOJ
AT28HC256F-90PU	Microchip Technology	IC EEPROM 256KBIT 90NS 28DIP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 3ms Access Time: 90ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Through Hole Package / Case: 28-DIP (0.600", 15.24mm) Supplier Device Package: 28-PDIP	パッケージ: 28-DIP (0.600", 15.24mm)	在庫3,536	EEPROM	EEPROM	256Kb (32K x 8)	Parallel	-	3ms	90ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TC)	Through Hole	28-DIP (0.600", 15.24mm)	28-PDIP
MT28F640J3RG-115 GMET TR	Micron Technology Inc.	IC FLASH 64MBIT 115NS 56TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 64Mb (8M x 8, 4M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 115ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 56-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 56-TSOP I	パッケージ: 56-TFSOP (0.724", 18.40mm Width)	在庫6,128	FLASH	FLASH	64Mb (8M x 8, 4M x 16)	Parallel	-	-	115ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	56-TFSOP (0.724", 18.40mm Width)	56-TSOP I
AT49F001AT-45VI	Microchip Technology	IC FLASH 1MBIT 45NS 32VSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 1Mb (128K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 50µs Access Time: 45ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 32-TFSOP (0.488", 12.40mm Width) Supplier Device Package: 32-VSOP	パッケージ: 32-TFSOP (0.488", 12.40mm Width)	在庫6,656	FLASH	FLASH	1Mb (128K x 8)	Parallel	-	50µs	45ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TC)	Surface Mount	32-TFSOP (0.488", 12.40mm Width)	32-VSOP
IS61WV25632BLL-10BLI	ISSI, Integrated Silicon Solution Inc	IC SRAM 8MBIT 10NS 90FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 8Mb (256K x 32) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10ns Voltage - Supply: 2.4 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 90-TFBGA Supplier Device Package: 90-TFBGA (8x13)	パッケージ: 90-TFBGA	在庫5,184	SRAM	SRAM - Asynchronous	8Mb (256K x 32)	Parallel	-	10ns	10ns	2.4 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	90-TFBGA	90-TFBGA (8x13)
7140SA35PF	IDT, Integrated Device Technology Inc	IC SRAM 8KBIT 35NS 64TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 8Kb (1K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 35ns Access Time: 35ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 64-LQFP Supplier Device Package: 64-TQFP (14x14)	パッケージ: 64-LQFP	在庫5,136	SRAM	SRAM - Dual Port, Asynchronous	8Kb (1K x 8)	Parallel	-	35ns	35ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	64-LQFP	64-TQFP (14x14)
7130LA35PF8	IDT, Integrated Device Technology Inc	IC SRAM 8KBIT 35NS 64TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 8Kb (1K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 35ns Access Time: 35ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 64-LQFP Supplier Device Package: 64-TQFP (14x14)	パッケージ: 64-LQFP	在庫3,600	SRAM	SRAM - Dual Port, Asynchronous	8Kb (1K x 8)	Parallel	-	35ns	35ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	64-LQFP	64-TQFP (14x14)
IS61NLP25618A-200TQLI	ISSI, Integrated Silicon Solution Inc	IC SRAM 4.5MBIT 200MHZ 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 4.5Mb (256K x 18) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: 3.1ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20)	パッケージ: 100-LQFP	在庫5,184	SRAM	SRAM - Synchronous	4.5Mb (256K x 18)	Parallel	200MHz	-	3.1ns	3.135 V ~ 3.465 V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x20)
25LC320AX-I/ST	Microchip Technology	IC EEPROM 32KBIT 10MHZ 8TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 32Kb (4K x 8) Memory Interface: SPI Clock Frequency: 10MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	パッケージ: 8-TSSOP (0.173", 4.40mm Width)	在庫5,280	EEPROM	EEPROM	32Kb (4K x 8)	SPI	10MHz	5ms	-	2.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
W25Q80EWUXIE TR	Winbond Electronics	IC FLASH 8MBIT 104MHZ 8USON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 8Mb (1M x 8) Memory Interface: SPI Clock Frequency: 104MHz Write Cycle Time - Word, Page: 800µs Access Time: - Voltage - Supply: 1.65 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-UFDFN Supplier Device Package: 8-USON (2x3)	パッケージ: 8-UFDFN	在庫3,600	FLASH	FLASH - NOR	8Mb (1M x 8)	SPI	104MHz	800µs	-	1.65 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	8-UFDFN	8-USON (2x3)
93C66AT-I/SN	Microchip Technology	IC EEPROM 4KBIT 2MHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 4Kb (512 x 8) Memory Interface: SPI Clock Frequency: 2MHz Write Cycle Time - Word, Page: 2ms Access Time: - Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫4,976	EEPROM	EEPROM	4Kb (512 x 8)	SPI	2MHz	2ms	-	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
RM25C32DS-LSNI-B	Adesto Technologies	IC EEPROM 32KBIT 1MHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 32kb (32B Page Size) Memory Interface: SPI Clock Frequency: 20MHz Write Cycle Time - Word, Page: 100µs, 2.5ms Access Time: - Voltage - Supply: 1.65 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫24,384	EEPROM	EEPROM	32kb (32B Page Size)	SPI	20MHz	100µs, 2.5ms	-	1.65 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
BR24T128FVT-WE2	Rohm Semiconductor	IC EEPROM 128K 400KHZ 8TSSOP-B Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 128Kb (16K x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.6 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP-B	パッケージ: 8-TSSOP (0.173", 4.40mm Width)	在庫99,024	EEPROM	EEPROM	128Kb (16K x 8)	I2C	400kHz	5ms	-	1.6 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP-B
11AA080-I/S16K	Microchip Technology	IC EEPROM 8K SINGLE WIRE 100KHZ Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 8Kb (1K x 8) Memory Interface: Single Wire Clock Frequency: 100kHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	パッケージ: Die	在庫4,736	EEPROM	EEPROM	8Kb (1K x 8)	Single Wire	100kHz	5ms	-	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	Die	Die
S29GL128P11TAI020	Cypress Semiconductor Corp	IC FLASH 128M PARALLEL 56TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (16M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 110ns Access Time: 110ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 56-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 56-TSOP	パッケージ: 56-TFSOP (0.724", 18.40mm Width)	在庫3,920	FLASH	FLASH - NOR	128Mb (16M x 8)	Parallel	-	110ns	110ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	56-TFSOP (0.724", 18.40mm Width)	56-TSOP
AT21CS11-UU0B-T	Microchip Technology	IC EEPROM 1K I2C 125KHZ Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kb (128 x 8) Memory Interface: I²C, Single Wire Clock Frequency: 125kHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 2.7 V ~ 4.5 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 4-XFBGA Supplier Device Package: 4-WLCSP (2x2)	パッケージ: 4-XFBGA	在庫6,736	EEPROM	EEPROM	1Kb (128 x 8)	I²C, Single Wire	125kHz	5ms	-	2.7 V ~ 4.5 V	-40°C ~ 85°C (TC)	Surface Mount	4-XFBGA	4-WLCSP (2x2)
MT53B256M64D2PX-062 XT ES:C	Micron Technology Inc.	IC DRAM 16G 1600MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 16Gb (256M x 64) Memory Interface: - Clock Frequency: 1600MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫2,352	DRAM	SDRAM - Mobile LPDDR4	16Gb (256M x 64)	-	1600MHz	-	-	1.1V	-	-	-	-
CG7902AAT	Cypress Semiconductor Corp	IC SRAM MICROPOWER 32STSOP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫2,496	-	-	-	-	-	-	-	-	-	-	-	-
MT40A2G8FSE-093E:A	Micron Technology Inc.	IC DRAM 16G PARALLEL 1067MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 16Gb (2G x 8) Memory Interface: Parallel Clock Frequency: 1067MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.26 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫4,640	DRAM	SDRAM - DDR4	16Gb (2G x 8)	Parallel	1067MHz	-	-	1.14 V ~ 1.26 V	0°C ~ 95°C (TC)	-	-	-
MT53E1DBDS-DC	Micron Technology Inc.	LPDDR4 0 WFBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
W25Q32RVSSJQ	Winbond Electronics	SPIFLASH, 32M-BIT, 4KB UNIFORM S Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 32Mbit Memory Interface: SPI - Quad I/O Clock Frequency: 133 MHz Write Cycle Time - Word, Page: 2ms Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Supplier Device Package: 8-SOIC	パッケージ: -	Request a Quote	FLASH	FLASH - NOR	32Mbit	SPI - Quad I/O	133 MHz	2ms	-	2.7V ~ 3.6V	-40°C ~ 105°C (TA)	Surface Mount	8-SOIC (0.209", 5.30mm Width)	8-SOIC
W66BP2NQUAGJ	Winbond Electronics	2GB LPDDR4, DDP, X32, 1866MHZ, - Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 2Gbit Memory Interface: LVSTL_11 Clock Frequency: 1.867 GHz Write Cycle Time - Word, Page: 18ns Access Time: 3.6 ns Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 200-TFBGA Supplier Device Package: 200-TFBGA (10x14.5)	パッケージ: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR4	2Gbit	LVSTL_11	1.867 GHz	18ns	3.6 ns	1.06V ~ 1.17V, 1.7V ~ 1.95V	-40°C ~ 105°C (TC)	Surface Mount	200-TFBGA	200-TFBGA (10x14.5)
CAT24C04WE-GT3	Catalyst Semiconductor Inc.	IC EEPROM 4KBIT I2C 400KHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 4Kbit Memory Interface: I2C Clock Frequency: 400 kHz Write Cycle Time - Word, Page: 5ms Access Time: 900 ns Voltage - Supply: 1.7V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	パッケージ: -	Request a Quote	EEPROM	EEPROM	4Kbit	I2C	400 kHz	5ms	900 ns	1.7V ~ 5.5V	-40°C ~ 125°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
NDQ86PFI-6NET	Insignis Technology Corporation	DDR4 8GB X16 FBGA 7.5X13 (X1.2) Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 8Gbit Memory Interface: POD Clock Frequency: 1.6 GHz Write Cycle Time - Word, Page: 15ns Access Time: 18 ns Voltage - Supply: 1.14V ~ 1.26V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-FBGA (7.5x13)	パッケージ: -	Request a Quote	DRAM	SDRAM - DDR4	8Gbit	POD	1.6 GHz	15ns	18 ns	1.14V ~ 1.26V	0°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-FBGA (7.5x13)
W25Q80BVZPSG	Winbond Electronics	IC FLASH 8MBIT SPI/QUAD 8WSON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 8Mbit Memory Interface: SPI - Quad I/O Clock Frequency: 104 MHz Write Cycle Time - Word, Page: 50µs, 3ms Access Time: 6 ns Voltage - Supply: 2.5V ~ 3.6V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (6x5)	パッケージ: -	Request a Quote	FLASH	FLASH - NOR	8Mbit	SPI - Quad I/O	104 MHz	50µs, 3ms	6 ns	2.5V ~ 3.6V	-40°C ~ 125°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x5)
CY7C265-18JC	Cypress Semiconductor Corp	IC EPROM 64KBIT PARALLEL Memory Type: Non-Volatile Memory Format: EPROM Technology: EPROM - OTP Memory Size: 64Kbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 18 ns Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	EPROM	EPROM - OTP	64Kbit	Parallel	-	-	18 ns	4.5V ~ 5.5V	0°C ~ 70°C (TA)	-	-	-
7006L12PF8	Renesas Electronics Corporation	IC RAM Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 128Kbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 12ns Access Time: 12 ns Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 64-LQFP Supplier Device Package: 64-TQFP (14x14)	パッケージ: -	Request a Quote	SRAM	SRAM - Dual Port, Asynchronous	128Kbit	Parallel	-	12ns	12 ns	4.5V ~ 5.5V	0°C ~ 70°C (TA)	Surface Mount	64-LQFP	64-TQFP (14x14)

IS25WQ080-JKLE

ISSI, Integrated Silicon Solution Inc

IC FLASH 8MBIT 104MHZ 8WSON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 8Mb (1M x 8)
Memory Interface: SPI
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 700µs
Access Time: -
Voltage - Supply: 1.65 V ~ 1.95 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (6x5)

パッケージ: 8-WDFN Exposed Pad

在庫4,256

FLASH

FLASH - NOR

8Mb (1M x 8)

SPI

104MHz

700µs

-

1.65 V ~ 1.95 V

-40°C ~ 105°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WSON (6x5)

CY7C1352S-133AXI

Cypress Semiconductor Corp

IC SRAM 4.5MBIT 133MHZ 100LQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 4.5Mb (256K x 18)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 4ns
Voltage - Supply: 3.135 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

パッケージ: 100-LQFP

在庫5,808

SRAM

SRAM - Synchronous

4.5Mb (256K x 18)

Parallel

133MHz

-

4ns

3.135 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

IDT71V35761S166BQI

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 166MHZ 165CABGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 4.5Mb (128K x 36)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: 3.5ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-CABGA (13x15)

パッケージ: 165-TBGA

在庫3,392

SRAM

SRAM - Synchronous

4.5Mb (128K x 36)

Parallel

166MHz

-

3.5ns

3.135 V ~ 3.465 V

-40°C ~ 85°C (TA)

Surface Mount

165-TBGA

165-CABGA (13x15)

CY7C1041BNV33L-12VXC

Cypress Semiconductor Corp

IC SRAM 4MBIT 12NS 44SOJ

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (256K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 12ns
Access Time: 12ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Supplier Device Package: 44-SOJ

パッケージ: 44-BSOJ (0.400", 10.16mm Width)

在庫5,632

SRAM

SRAM - Asynchronous

4Mb (256K x 16)

Parallel

-

12ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

44-BSOJ (0.400", 10.16mm Width)

44-SOJ

AT28HC256F-90PU

Microchip Technology

IC EEPROM 256KBIT 90NS 28DIP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 3ms
Access Time: 90ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Through Hole
Package / Case: 28-DIP (0.600", 15.24mm)
Supplier Device Package: 28-PDIP

パッケージ: 28-DIP (0.600", 15.24mm)

在庫3,536

EEPROM

256Kb (32K x 8)

Parallel

-

3ms

90ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TC)

Through Hole

28-DIP (0.600", 15.24mm)

28-PDIP

MT28F640J3RG-115 GMET TR

Micron Technology Inc.

IC FLASH 64MBIT 115NS 56TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 64Mb (8M x 8, 4M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 115ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 56-TSOP I

パッケージ: 56-TFSOP (0.724", 18.40mm Width)

在庫6,128

FLASH

64Mb (8M x 8, 4M x 16)

Parallel

-

115ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

56-TFSOP (0.724", 18.40mm Width)

56-TSOP I

AT49F001AT-45VI

Microchip Technology

IC FLASH 1MBIT 45NS 32VSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 1Mb (128K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 50µs
Access Time: 45ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.488", 12.40mm Width)
Supplier Device Package: 32-VSOP

パッケージ: 32-TFSOP (0.488", 12.40mm Width)

在庫6,656

FLASH

1Mb (128K x 8)

Parallel

-

50µs

45ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TC)

Surface Mount

32-TFSOP (0.488", 12.40mm Width)

32-VSOP

IS61WV25632BLL-10BLI

ISSI, Integrated Silicon Solution Inc

IC SRAM 8MBIT 10NS 90FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 8Mb (256K x 32)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Voltage - Supply: 2.4 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
Supplier Device Package: 90-TFBGA (8x13)

パッケージ: 90-TFBGA

在庫5,184

SRAM

SRAM - Asynchronous

8Mb (256K x 32)

Parallel

-

10ns

2.4 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

90-TFBGA

90-TFBGA (8x13)

7140SA35PF

IDT, Integrated Device Technology Inc

IC SRAM 8KBIT 35NS 64TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 8Kb (1K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 35ns
Access Time: 35ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Supplier Device Package: 64-TQFP (14x14)

パッケージ: 64-LQFP

在庫5,136

SRAM

SRAM - Dual Port, Asynchronous

8Kb (1K x 8)

Parallel

-

35ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

64-LQFP

64-TQFP (14x14)

7130LA35PF8

IDT, Integrated Device Technology Inc

IC SRAM 8KBIT 35NS 64TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 8Kb (1K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 35ns
Access Time: 35ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Supplier Device Package: 64-TQFP (14x14)

パッケージ: 64-LQFP

在庫3,600

SRAM

SRAM - Dual Port, Asynchronous

8Kb (1K x 8)

Parallel

-

35ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

64-LQFP

64-TQFP (14x14)

IS61NLP25618A-200TQLI

ISSI, Integrated Silicon Solution Inc

IC SRAM 4.5MBIT 200MHZ 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 4.5Mb (256K x 18)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: 3.1ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20)

パッケージ: 100-LQFP

在庫5,184

SRAM

SRAM - Synchronous

4.5Mb (256K x 18)

Parallel

200MHz

-

3.1ns

3.135 V ~ 3.465 V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x20)

25LC320AX-I/ST

Microchip Technology

IC EEPROM 32KBIT 10MHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 32Kb (4K x 8)
Memory Interface: SPI
Clock Frequency: 10MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

パッケージ: 8-TSSOP (0.173", 4.40mm Width)

在庫5,280

EEPROM

32Kb (4K x 8)

SPI

10MHz

5ms

-

2.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

W25Q80EWUXIE TR

Winbond Electronics

IC FLASH 8MBIT 104MHZ 8USON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 8Mb (1M x 8)
Memory Interface: SPI
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 800µs
Access Time: -
Voltage - Supply: 1.65 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UFDFN
Supplier Device Package: 8-USON (2x3)

パッケージ: 8-UFDFN

在庫3,600

FLASH

FLASH - NOR

8Mb (1M x 8)

SPI

104MHz

800µs

-

1.65 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

8-UFDFN

8-USON (2x3)

93C66AT-I/SN

Microchip Technology

IC EEPROM 4KBIT 2MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 4Kb (512 x 8)
Memory Interface: SPI
Clock Frequency: 2MHz
Write Cycle Time - Word, Page: 2ms
Access Time: -
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫4,976

EEPROM

4Kb (512 x 8)

SPI

2MHz

2ms

-

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

RM25C32DS-LSNI-B

Adesto Technologies

IC EEPROM 32KBIT 1MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 32kb (32B Page Size)
Memory Interface: SPI
Clock Frequency: 20MHz
Write Cycle Time - Word, Page: 100µs, 2.5ms
Access Time: -
Voltage - Supply: 1.65 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫24,384

EEPROM

32kb (32B Page Size)

SPI

20MHz

100µs, 2.5ms

-

1.65 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

BR24T128FVT-WE2

Rohm Semiconductor

IC EEPROM 128K 400KHZ 8TSSOP-B

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 128Kb (16K x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.6 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP-B

パッケージ: 8-TSSOP (0.173", 4.40mm Width)

在庫99,024

EEPROM

128Kb (16K x 8)

I2C

400kHz

5ms

-

1.6 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP-B

11AA080-I/S16K

Microchip Technology

IC EEPROM 8K SINGLE WIRE 100KHZ

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 8Kb (1K x 8)
Memory Interface: Single Wire
Clock Frequency: 100kHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

パッケージ: Die

在庫4,736

EEPROM

8Kb (1K x 8)

Single Wire

100kHz

5ms

-

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

Die

S29GL128P11TAI020

Cypress Semiconductor Corp

IC FLASH 128M PARALLEL 56TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (16M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 110ns
Access Time: 110ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 56-TSOP

パッケージ: 56-TFSOP (0.724", 18.40mm Width)

在庫3,920

FLASH

FLASH - NOR

128Mb (16M x 8)

Parallel

-

110ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

56-TFSOP (0.724", 18.40mm Width)

56-TSOP

AT21CS11-UU0B-T

Microchip Technology

IC EEPROM 1K I2C 125KHZ

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kb (128 x 8)
Memory Interface: I²C, Single Wire
Clock Frequency: 125kHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 2.7 V ~ 4.5 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 4-XFBGA
Supplier Device Package: 4-WLCSP (2x2)

パッケージ: 4-XFBGA

在庫6,736

EEPROM

1Kb (128 x 8)

I²C, Single Wire

125kHz

5ms

-

2.7 V ~ 4.5 V

-40°C ~ 85°C (TC)

Surface Mount

4-XFBGA

4-WLCSP (2x2)

MT53B256M64D2PX-062 XT ES:C

Micron Technology Inc.

IC DRAM 16G 1600MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 16Gb (256M x 64)
Memory Interface: -
Clock Frequency: 1600MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫2,352

DRAM

SDRAM - Mobile LPDDR4

16Gb (256M x 64)

-

1600MHz

-

1.1V

-

CG7902AAT

Cypress Semiconductor Corp

IC SRAM MICROPOWER 32STSOP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫2,496

-

MT40A2G8FSE-093E:A

Micron Technology Inc.

IC DRAM 16G PARALLEL 1067MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 16Gb (2G x 8)
Memory Interface: Parallel
Clock Frequency: 1067MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.26 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫4,640

DRAM

SDRAM - DDR4

16Gb (2G x 8)

Parallel

1067MHz

-

1.14 V ~ 1.26 V

0°C ~ 95°C (TC)

-

MT53E1DBDS-DC

Micron Technology Inc.

LPDDR4 0 WFBGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

Request a Quote

-

W25Q32RVSSJQ

Winbond Electronics

SPIFLASH, 32M-BIT, 4KB UNIFORM S

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 32Mbit
Memory Interface: SPI - Quad I/O
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: 2ms
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SOIC

パッケージ: -

Request a Quote

FLASH

FLASH - NOR

32Mbit

SPI - Quad I/O

133 MHz

2ms

-

2.7V ~ 3.6V

-40°C ~ 105°C (TA)

Surface Mount

8-SOIC (0.209", 5.30mm Width)

8-SOIC

W66BP2NQUAGJ

Winbond Electronics

2GB LPDDR4, DDP, X32, 1866MHZ, -

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 2Gbit
Memory Interface: LVSTL_11
Clock Frequency: 1.867 GHz
Write Cycle Time - Word, Page: 18ns
Access Time: 3.6 ns
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
Supplier Device Package: 200-TFBGA (10x14.5)

パッケージ: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR4

2Gbit

LVSTL_11

1.867 GHz

18ns

3.6 ns

1.06V ~ 1.17V, 1.7V ~ 1.95V

-40°C ~ 105°C (TC)

Surface Mount

200-TFBGA

200-TFBGA (10x14.5)

CAT24C04WE-GT3

Catalyst Semiconductor Inc.

IC EEPROM 4KBIT I2C 400KHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 4Kbit
Memory Interface: I2C
Clock Frequency: 400 kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900 ns
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

パッケージ: -

Request a Quote

EEPROM

4Kbit

I2C

400 kHz

5ms

900 ns

1.7V ~ 5.5V

-40°C ~ 125°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

NDQ86PFI-6NET

Insignis Technology Corporation

DDR4 8GB X16 FBGA 7.5X13 (X1.2)

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 8Gbit
Memory Interface: POD
Clock Frequency: 1.6 GHz
Write Cycle Time - Word, Page: 15ns
Access Time: 18 ns
Voltage - Supply: 1.14V ~ 1.26V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-FBGA (7.5x13)

パッケージ: -

Request a Quote

DRAM

SDRAM - DDR4

8Gbit

POD

1.6 GHz

15ns

18 ns

1.14V ~ 1.26V

0°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-FBGA (7.5x13)

W25Q80BVZPSG

Winbond Electronics

IC FLASH 8MBIT SPI/QUAD 8WSON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 8Mbit
Memory Interface: SPI - Quad I/O
Clock Frequency: 104 MHz
Write Cycle Time - Word, Page: 50µs, 3ms
Access Time: 6 ns
Voltage - Supply: 2.5V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (6x5)

パッケージ: -

Request a Quote

FLASH

FLASH - NOR

8Mbit

SPI - Quad I/O

104 MHz

50µs, 3ms

6 ns

2.5V ~ 3.6V

-40°C ~ 125°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WSON (6x5)

CY7C265-18JC

Cypress Semiconductor Corp

IC EPROM 64KBIT PARALLEL

Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - OTP
Memory Size: 64Kbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 18 ns
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

Request a Quote

EPROM

EPROM - OTP

64Kbit

Parallel

-

18 ns

4.5V ~ 5.5V

0°C ~ 70°C (TA)

-

7006L12PF8

Renesas Electronics Corporation

IC RAM

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 128Kbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 12ns
Access Time: 12 ns
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Supplier Device Package: 64-TQFP (14x14)

パッケージ: -

Request a Quote

SRAM

SRAM - Dual Port, Asynchronous

128Kbit

Parallel

-

12ns

12 ns

4.5V ~ 5.5V

0°C ~ 70°C (TA)

Surface Mount

64-LQFP

64-TQFP (14x14)