ページ 290 - メモリ | 集積回路(IC) | Heisener Electronics
連絡先
SalesDept@heisener.com +86-755-83210559 ext. 815
Language Translation

* Please refer to the English Version as our Official Version.

メモリ

レコード 62,144
ページ  290/2,072
画像
部品番号
メーカ
説明
パッケージ
在庫
数量
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
W25Q64FVSTIG
Winbond Electronics

IC FLASH 64MBIT 104MHZ 8VSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 64Mb (8M x 8)
  • Memory Interface: SPI
  • Clock Frequency: 104MHz
  • Write Cycle Time - Word, Page: 3ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.209", 5.30mm Width)
  • Supplier Device Package: 8-VSOP
パッケージ: 8-SOIC (0.209", 5.30mm Width)
在庫4,480
FLASH
FLASH - NOR
64Mb (8M x 8)
SPI
104MHz
3ms
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.209", 5.30mm Width)
8-VSOP
hot IS42S16320B-6TLI
ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 166MHZ 54TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 512Mb (32M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.4ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 54-TSOP II
パッケージ: 54-TSOP (0.400", 10.16mm Width)
在庫112,188
DRAM
SDRAM
512Mb (32M x 16)
Parallel
166MHz
-
5.4ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
54-TSOP (0.400", 10.16mm Width)
54-TSOP II
hot AT24C32D-SSHM-T
Microchip Technology

IC EEPROM 32KBIT 1MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 32Kb (4K x 8)
  • Memory Interface: I2C
  • Clock Frequency: 1MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 550ns
  • Voltage - Supply: 1.7 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
パッケージ: 8-SOIC (0.154", 3.90mm Width)
在庫48,000
EEPROM
EEPROM
32Kb (4K x 8)
I2C
1MHz
5ms
550ns
1.7 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
AT29LV512-20JI
Microchip Technology

IC FLASH 512KBIT 200NS 32PLCC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 512Kb (64K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 20ms
  • Access Time: 200ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 32-LCC (J-Lead)
  • Supplier Device Package: 32-PLCC
パッケージ: 32-LCC (J-Lead)
在庫5,088
FLASH
FLASH
512Kb (64K x 8)
Parallel
-
20ms
200ns
3 V ~ 3.6 V
-40°C ~ 85°C (TC)
Surface Mount
32-LCC (J-Lead)
32-PLCC
hot AT28C010E-12JI
Microchip Technology

IC EEPROM 1MBIT 120NS 32PLCC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ms
  • Access Time: 120ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 32-LCC (J-Lead)
  • Supplier Device Package: 32-PLCC
パッケージ: 32-LCC (J-Lead)
在庫5,920
EEPROM
EEPROM
1Mb (128K x 8)
Parallel
-
10ms
120ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TC)
Surface Mount
32-LCC (J-Lead)
32-PLCC
70V9269L12PRFGI
IDT, Integrated Device Technology Inc

IC SRAM 256KBIT 12NS 128TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Synchronous
  • Memory Size: 256Kb (16K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 12ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 128-LQFP
  • Supplier Device Package: 128-TQFP (14x14)
パッケージ: 128-LQFP
在庫3,712
SRAM
SRAM - Dual Port, Synchronous
256Kb (16K x 16)
Parallel
-
-
12ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
128-LQFP
128-TQFP (14x14)
IS43TR81280B-107MBL
ISSI, Integrated Silicon Solution Inc

IC SDRAM 1GBIT 933MHZ 78BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3
  • Memory Size: 1Gb (128M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 933MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20ns
  • Voltage - Supply: 1.425 V ~ 1.575 V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 78-TFBGA
  • Supplier Device Package: 78-TWBGA (8x10.5)
パッケージ: 78-TFBGA
在庫7,968
DRAM
SDRAM - DDR3
1Gb (128M x 8)
Parallel
933MHz
15ns
20ns
1.425 V ~ 1.575 V
0°C ~ 95°C (TC)
Surface Mount
78-TFBGA
78-TWBGA (8x10.5)
IS61LPS12836EC-200TQLI-TR
ISSI, Integrated Silicon Solution Inc

IC SRAM 4.5MBIT 200MHZ 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 4.5Mb (128K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3.1ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-LQFP (14x20)
パッケージ: 100-LQFP
在庫6,512
SRAM
SRAM - Synchronous
4.5Mb (128K x 36)
Parallel
200MHz
-
3.1ns
3.135 V ~ 3.465 V
-40°C ~ 85°C (TA)
Surface Mount
100-LQFP
100-LQFP (14x20)
hot CY7C1347G-200AXC
Cypress Semiconductor Corp

IC SRAM 4.5MBIT 200MHZ 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 4.5Mb (128K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 2.8ns
  • Voltage - Supply: 3.15 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x20)
パッケージ: 100-LQFP
在庫13,572
SRAM
SRAM - Synchronous
4.5Mb (128K x 36)
Parallel
200MHz
-
2.8ns
3.15 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x20)
AS4C16M16SA-7TCNTR
Alliance Memory, Inc.

IC SDRAM 256MBIT 143MHZ 54TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 256Mb (16M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: 14ns
  • Access Time: 5.4ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 54-TSOP II
パッケージ: 54-TSOP (0.400", 10.16mm Width)
在庫5,136
DRAM
SDRAM
256Mb (16M x 16)
Parallel
166MHz
14ns
5.4ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
54-TSOP (0.400", 10.16mm Width)
54-TSOP II
hot W9425G6KH-5
Winbond Electronics

IC SDRAM 256MBIT 200MHZ 66TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR
  • Memory Size: 256Mb (16M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 55ns
  • Voltage - Supply: 2.3 V ~ 2.7 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 66-TSSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 66-TSOP II
パッケージ: 66-TSSOP (0.400", 10.16mm Width)
在庫5,616
DRAM
SDRAM - DDR
256Mb (16M x 16)
Parallel
200MHz
15ns
55ns
2.3 V ~ 2.7 V
0°C ~ 70°C (TA)
Surface Mount
66-TSSOP (0.400", 10.16mm Width)
66-TSOP II
70V657S12DRI
IDT, Integrated Device Technology Inc

IC SRAM 1.125MBIT 12NS 208QFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 1.125Mb (32K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 12ns
  • Access Time: 12ns
  • Voltage - Supply: 3.15 V ~ 3.45 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 208-BFQFP
  • Supplier Device Package: 208-PQFP (28x28)
パッケージ: 208-BFQFP
在庫7,872
SRAM
SRAM - Dual Port, Asynchronous
1.125Mb (32K x 36)
Parallel
-
12ns
12ns
3.15 V ~ 3.45 V
-40°C ~ 85°C (TA)
Surface Mount
208-BFQFP
208-PQFP (28x28)
S29CD032J1MQFM013
Cypress Semiconductor Corp

IC FLASH 32M PARALLEL 80PQFP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 32Mb (1M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 56MHz
  • Write Cycle Time - Word, Page: 60ns
  • Access Time: 54ns
  • Voltage - Supply: 1.65 V ~ 2.75 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 80-BQFP
  • Supplier Device Package: 80-PQFP (20x20)
パッケージ: 80-BQFP
在庫6,768
FLASH
FLASH - NOR
32Mb (1M x 32)
Parallel
56MHz
60ns
54ns
1.65 V ~ 2.75 V
-40°C ~ 125°C (TA)
Surface Mount
80-BQFP
80-PQFP (20x20)
IS43R86400E-6TLI
ISSI, Integrated Silicon Solution Inc

IC DRAM 512M PARALLEL 166MHZ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR
  • Memory Size: 512Mb (64M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 700ps
  • Voltage - Supply: 2.3 V ~ 2.7 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 66-TSSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 66-TSOP II
パッケージ: 66-TSSOP (0.400", 10.16mm Width)
在庫5,712
DRAM
SDRAM - DDR
512Mb (64M x 8)
Parallel
166MHz
15ns
700ps
2.3 V ~ 2.7 V
-40°C ~ 85°C (TA)
Surface Mount
66-TSSOP (0.400", 10.16mm Width)
66-TSOP II
R1RP0416DGE-2PR#B0
Renesas Electronics America

IC SRAM 4M FAST 44-SOJ

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM
  • Memory Size: 4Mb (256K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 12ns
  • Access Time: 12ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-BSOJ (0.400", 10.16mm Width)
  • Supplier Device Package: 44-SOJ
パッケージ: 44-BSOJ (0.400", 10.16mm Width)
在庫3,088
SRAM
SRAM
4Mb (256K x 16)
Parallel
-
12ns
12ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
44-BSOJ (0.400", 10.16mm Width)
44-SOJ
MTFC8GAMALNA-AIT TR
Micron Technology Inc.

IC FLASH 64G MMC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 64Gb (8G x 8)
  • Memory Interface: MMC
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫6,272
FLASH
FLASH - NAND
64Gb (8G x 8)
MMC
-
-
-
-
-40°C ~ 85°C (TA)
-
-
-
7006S17JI8
IDT, Integrated Device Technology Inc

IC SRAM 128K PARALLEL 68PLCC

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 128Kb (16K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 17ns
  • Access Time: 17ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 68-LCC (J-Lead)
  • Supplier Device Package: 68-PLCC (24.21x24.21)
パッケージ: 68-LCC (J-Lead)
在庫7,152
SRAM
SRAM - Dual Port, Asynchronous
128Kb (16K x 8)
Parallel
-
17ns
17ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
68-LCC (J-Lead)
68-PLCC (24.21x24.21)
70V9269L9PRFG
IDT, Integrated Device Technology Inc

IC SRAM 256K PARALLEL 128TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Synchronous
  • Memory Size: 256Kb (16K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 9ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 128-LQFP
  • Supplier Device Package: 128-TQFP (14x20)
パッケージ: 128-LQFP
在庫4,864
SRAM
SRAM - Dual Port, Synchronous
256Kb (16K x 16)
Parallel
-
-
9ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
128-LQFP
128-TQFP (14x20)
QMP29GL128P10TAI020
Cypress Semiconductor Corp

IC MEMORY NOR

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫6,432
-
-
-
-
-
-
-
-
-
-
-
-
MX25U25643GZNI00
Macronix

MEMORY

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 256Mbit
  • Memory Interface: SPI - Quad I/O, QPI, DTR
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: 40µs, 3ms
  • Access Time: 8 ns
  • Voltage - Supply: 1.65V ~ 2V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-WSON (6x5)
パッケージ: -
Request a Quote
FLASH
FLASH - NOR (SLC)
256Mbit
SPI - Quad I/O, QPI, DTR
133 MHz
40µs, 3ms
8 ns
1.65V ~ 2V
-40°C ~ 85°C (TA)
Surface Mount
8-WDFN Exposed Pad
8-WSON (6x5)
CAT93C86SE-26685
Catalyst Semiconductor Inc.

IC EEPROM 16KBIT MICROWIRE 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 16Kbit
  • Memory Interface: Microwire
  • Clock Frequency: 3 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.8V ~ 5.5V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
パッケージ: -
Request a Quote
EEPROM
EEPROM
16Kbit
Microwire
3 MHz
-
-
1.8V ~ 5.5V
-40°C ~ 125°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
UPD44325084BF5-E33-FQ1
Renesas Electronics Corporation

QDR SRAM, 4MX8, 0.45NS

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
MT62F3G32D8DV-026-WT-B
Micron Technology Inc.

LPDDR5 96G 3GX32 FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR5
  • Memory Size: 96Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 3.2 GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -25°C ~ 85°C
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
Request a Quote
DRAM
SDRAM - Mobile LPDDR5
96Gbit
Parallel
3.2 GHz
-
-
-
-25°C ~ 85°C
-
-
-
BR93G76FJ-3GTE2
Rohm Semiconductor

IC EEPROM 8KBIT MICROWIRE 8SOPJ

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 8Kbit
  • Memory Interface: Microwire
  • Clock Frequency: 3 MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 1.7V ~ 5.5V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP-J
パッケージ: -
在庫7,500
EEPROM
EEPROM
8Kbit
Microwire
3 MHz
5ms
-
1.7V ~ 5.5V
-40°C ~ 105°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP-J
JBP28S42MJ
Texas Instruments

512X8 BI-POLAR PROM 20-CDIP -55

  • Memory Type: Non-Volatile
  • Memory Format: PROM
  • Technology: -
  • Memory Size: 4Kbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 70 ns
  • Voltage - Supply: 4.5V ~ 5.5V
  • Operating Temperature: -55°C ~ 125°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 20-CDIP (0.300", 7.62mm)
  • Supplier Device Package: 20-CDIP
パッケージ: -
Request a Quote
PROM
-
4Kbit
Parallel
-
-
70 ns
4.5V ~ 5.5V
-55°C ~ 125°C (TA)
Through Hole
20-CDIP (0.300", 7.62mm)
20-CDIP
QS8882-15V
Quality Semiconductor

QS8882 - CACHE SRAM, 16KX4, 15NS

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
IS45S16800J-7TLA1
ISSI, Integrated Silicon Solution Inc

IC DRAM 128MBIT PAR 54TSOP II

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 128Mbit
  • Memory Interface: LVTTL
  • Clock Frequency: 143 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.4 ns
  • Voltage - Supply: 3V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 54-TSOP II
パッケージ: -
Request a Quote
DRAM
SDRAM
128Mbit
LVTTL
143 MHz
-
5.4 ns
3V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
54-TSOP (0.400", 10.16mm Width)
54-TSOP II
IS25WP020E-JNLE
ISSI, Integrated Silicon Solution Inc

IC FLASH 2MBIT SPI/QUAD 8SOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 2Mbit
  • Memory Interface: SPI - Quad I/O, QPI, DTR
  • Clock Frequency: 104 MHz
  • Write Cycle Time - Word, Page: 1.2ms
  • Access Time: 8 ns
  • Voltage - Supply: 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
パッケージ: -
Request a Quote
FLASH
FLASH - NOR
2Mbit
SPI - Quad I/O, QPI, DTR
104 MHz
1.2ms
8 ns
1.7V ~ 1.95V
-40°C ~ 105°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
MT40A16G4WPF-062H-B
Micron Technology Inc.

IC DRAM 64GBIT 1.6GHZ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR4
  • Memory Size: 64Gbit
  • Memory Interface: -
  • Clock Frequency: 1.6 GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
Request a Quote
DRAM
SDRAM - DDR4
64Gbit
-
1.6 GHz
-
-
-
0°C ~ 95°C (TC)
-
-
-
SM662GBD-BFST-1
Silicon Motion, Inc.

IC FLASH 1TBIT EMMC 100BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (TLC)
  • Memory Size: 1Tbit
  • Memory Interface: eMMC
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -40°C ~ 105°C
  • Mounting Type: Surface Mount
  • Package / Case: 100-LBGA
  • Supplier Device Package: 100-BGA (14x18)
パッケージ: -
在庫15
FLASH
FLASH - NAND (TLC)
1Tbit
eMMC
-
-
-
-
-40°C ~ 105°C
Surface Mount
100-LBGA
100-BGA (14x18)