ページ 683 - メモリ | 集積回路（IC）

部品番号	メーカ	説明	パッケージ	在庫	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
CB021-80075	Cypress Semiconductor Corp	IC FLASH NOR Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫7,920	-	-	-	-	-	-	-	-	-	-	-	-
MTFC4GMTEA-1F WT	Micron Technology Inc.	IC FLASH 32GBIT 153WFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 32Gb (4G x 8) Memory Interface: MMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -25°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 153-WFBGA Supplier Device Package: 153-WFBGA (11.5x13)	パッケージ: 153-WFBGA	在庫3,968	FLASH	FLASH - NAND	32Gb (4G x 8)	MMC	-	-	-	2.7 V ~ 3.6 V	-25°C ~ 85°C (TA)	Surface Mount	153-WFBGA	153-WFBGA (11.5x13)
MT29C1G12MAAJAFAMD-6 IT	Micron Technology Inc.	IC FLASH/LPDRAM 1.5GBIT 130VFBGA Memory Type: Non-Volatile Memory Format: FLASH, RAM Technology: FLASH - NAND, Mobile LPDRAM Memory Size: 1Gb (128M x 8)(NAND), 512Mb (16M x 32)(LPDRAM) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 130-VFBGA Supplier Device Package: 130-VFBGA (8x9)	パッケージ: 130-VFBGA	在庫7,088	FLASH, RAM	FLASH - NAND, Mobile LPDRAM	1Gb (128M x 8)(NAND), 512Mb (16M x 32)(LPDRAM)	Parallel	166MHz	-	-	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	130-VFBGA	130-VFBGA (8x9)
W972GG8JB-25	Winbond Electronics	IC SDRAM 2GBIT 400MHZ 60WBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 2Gb (256M x 8) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 400ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-WBGA (11x11.5)	パッケージ: 60-TFBGA	在庫33,960	DRAM	SDRAM - DDR2	2Gb (256M x 8)	Parallel	200MHz	15ns	400ps	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	Surface Mount	60-TFBGA	60-WBGA (11x11.5)
SST39LF040-55-4I-B3KE	Microchip Technology	IC FLASH 4MBIT 55NS 48TFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 4Mb (512K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20µs Access Time: 55ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFBGA Supplier Device Package: 48-TFBGA	パッケージ: 48-TFBGA	在庫6,320	FLASH	FLASH	4Mb (512K x 8)	Parallel	-	20µs	55ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFBGA	48-TFBGA
IDT71V424YL10PHI8	IDT, Integrated Device Technology Inc	IC SRAM 4MBIT 10NS 44TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 4Mb (512K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP II	パッケージ: 44-TSOP (0.400", 10.16mm Width)	在庫4,320	SRAM	SRAM - Asynchronous	4Mb (512K x 8)	Parallel	-	10ns	10ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	44-TSOP (0.400", 10.16mm Width)	44-TSOP II
IS42S16800E-75EBLI-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 128MBIT 133MHZ 54TFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 128Mb (8M x 16) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 54-TFBGA Supplier Device Package: 54-TFBGA (8x8)	パッケージ: 54-TFBGA	在庫4,800	DRAM	SDRAM	128Mb (8M x 16)	Parallel	133MHz	-	5.4ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	54-TFBGA	54-TFBGA (8x8)
AT45DB041D-MU-2.5	Microchip Technology	IC FLASH 4MBIT 50MHZ 8VDFN Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 4Mb (264 Bytes x 2048 pages) Memory Interface: SPI Clock Frequency: 50MHz Write Cycle Time - Word, Page: 4ms Access Time: - Voltage - Supply: 2.5 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Supplier Device Package: 8-VDFN (6x5)	パッケージ: 8-VDFN Exposed Pad	在庫5,472	FLASH	FLASH	4Mb (264 Bytes x 2048 pages)	SPI	50MHz	4ms	-	2.5 V ~ 3.6 V	-40°C ~ 85°C (TC)	Surface Mount	8-VDFN Exposed Pad	8-VDFN (6x5)
MT46V32M16FN-75:C TR	Micron Technology Inc.	IC SDRAM 512MBIT 133MHZ 60FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 512Mb (32M x 16) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: 15ns Access Time: 750ps Voltage - Supply: 2.3 V ~ 2.7 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-FBGA (10x12.5)	パッケージ: 60-TFBGA	在庫5,408	DRAM	SDRAM - DDR	512Mb (32M x 16)	Parallel	133MHz	15ns	750ps	2.3 V ~ 2.7 V	0°C ~ 70°C (TA)	Surface Mount	60-TFBGA	60-FBGA (10x12.5)
MT48LC32M8A2TG-75:D TR	Micron Technology Inc.	IC SDRAM 256MBIT 133MHZ 54TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 256Mb (32M x 8) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: 15ns Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Supplier Device Package: 54-TSOP II	パッケージ: 54-TSOP (0.400", 10.16mm Width)	在庫7,456	DRAM	SDRAM	256Mb (32M x 8)	Parallel	133MHz	15ns	5.4ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	54-TSOP (0.400", 10.16mm Width)	54-TSOP II
AT25160N-10SI-1.8	Microchip Technology	IC EEPROM 16KBIT 3MHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 16Kb (2K x 8) Memory Interface: SPI Clock Frequency: 3MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.8 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫7,264	EEPROM	EEPROM	16Kb (2K x 8)	SPI	3MHz	5ms	-	1.8 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
AT24C04N-10SC-1.8	Microchip Technology	IC EEPROM 4KBIT 400KHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 4Kb (512 x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫4,688	EEPROM	EEPROM	4Kb (512 x 8)	I2C	400kHz	5ms	900ns	1.8 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
NM93C46EN	Fairchild/ON Semiconductor	IC EEPROM 1KBIT 1MHZ 8DIP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kb (64 x 16) Memory Interface: SPI Clock Frequency: 1MHz Write Cycle Time - Word, Page: 10ms Access Time: - Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-DIP	パッケージ: 8-DIP (0.300", 7.62mm)	在庫2,176	EEPROM	EEPROM	1Kb (64 x 16)	SPI	1MHz	10ms	-	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Through Hole	8-DIP (0.300", 7.62mm)	8-DIP
70V27L35PF8	IDT, Integrated Device Technology Inc	IC SRAM 512KBIT 35NS 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 512Kb (32K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 35ns Access Time: 35ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	パッケージ: 100-LQFP	在庫3,888	SRAM	SRAM - Dual Port, Asynchronous	512Kb (32K x 16)	Parallel	-	35ns	35ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
71V65703S85BQGI	IDT, Integrated Device Technology Inc	IC SRAM 9MBIT 8.5NS 165CABGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous ZBT Memory Size: 9Mb (256K x 36) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 8.5ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 165-TBGA Supplier Device Package: 165-CABGA (13x15)	パッケージ: 165-TBGA	在庫4,256	SRAM	SRAM - Synchronous ZBT	9Mb (256K x 36)	Parallel	-	-	8.5ns	3.135 V ~ 3.465 V	-40°C ~ 85°C (TA)	Surface Mount	165-TBGA	165-CABGA (13x15)
IS25WP032D-JKLE-TR	ISSI, Integrated Silicon Solution Inc	32MB QPI/QSPI WSON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 32Mb (4M x 8) Memory Interface: SPI - Quad I/O, QPI, DTR Clock Frequency: 133MHz Write Cycle Time - Word, Page: 800µs Access Time: - Voltage - Supply: 1.65 V ~ 1.95 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (6x5)	パッケージ: 8-WDFN Exposed Pad	在庫6,128	FLASH	FLASH - NOR	32Mb (4M x 8)	SPI - Quad I/O, QPI, DTR	133MHz	800µs	-	1.65 V ~ 1.95 V	-40°C ~ 105°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x5)
25LC640A-E/P	Microchip Technology	IC EEPROM 64KBIT 10MHZ 8DIP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 64Kb (8K x 8) Memory Interface: SPI Clock Frequency: 10MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	パッケージ: 8-DIP (0.300", 7.62mm)	在庫4,992	EEPROM	EEPROM	64Kb (8K x 8)	SPI	10MHz	5ms	-	2.5 V ~ 5.5 V	-40°C ~ 125°C (TA)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
CAT25128VP2I-GT3	ON Semiconductor	IC EEPROM 128KBIT 10MHZ 8TDFN Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 128Kb (16K x 8) Memory Interface: SPI Clock Frequency: 10MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-WFDFN Exposed Pad Supplier Device Package: 8-TDFN (2x3)	パッケージ: 8-WFDFN Exposed Pad	在庫4,256	EEPROM	EEPROM	128Kb (16K x 8)	SPI	10MHz	5ms	-	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-WFDFN Exposed Pad	8-TDFN (2x3)
CY7C1372DV25-167AXC	Cypress Semiconductor Corp	IC SRAM 18MBIT 167MHZ 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 18Mb (1M x 18) Memory Interface: Parallel Clock Frequency: 167MHz Write Cycle Time - Word, Page: - Access Time: 3.4ns Voltage - Supply: 2.375 V ~ 2.625 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20)	パッケージ: 100-LQFP	在庫8,964	SRAM	SRAM - Synchronous	18Mb (1M x 18)	Parallel	167MHz	-	3.4ns	2.375 V ~ 2.625 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x20)
M24C02-FMC6TG	STMicroelectronics	IC EEPROM 2KBIT 400KHZ 8UFDFPN Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (256 x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 1.7 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-UFDFN Exposed Pad Supplier Device Package: 8-UFDFPN (2x3)	パッケージ: 8-UFDFN Exposed Pad	在庫6,384	EEPROM	EEPROM	2Kb (256 x 8)	I2C	400kHz	5ms	900ns	1.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-UFDFN Exposed Pad	8-UFDFPN (2x3)
MT48LC64M8A2TG-75:C	Alliance Memory, Inc.	IC SDRAM 512MBIT 133MHZ 54TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 512Mb (64M x 8) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: 15ns Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Supplier Device Package: 54-TSOP	パッケージ: 54-TSOP (0.400", 10.16mm Width)	在庫6,240	DRAM	SDRAM	512Mb (64M x 8)	Parallel	133MHz	15ns	5.4ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	54-TSOP (0.400", 10.16mm Width)	54-TSOP
BR93G66FJ-3GTE2	Rohm Semiconductor	MICROWIRE BUS 4KBIT(256X16BIT) E Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 4Kb (256 x 16) Memory Interface: SPI Clock Frequency: 3MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.7 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP-J	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫13,632	EEPROM	EEPROM	4Kb (256 x 16)	SPI	3MHz	5ms	-	1.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP-J
IS43DR16160B-3DBI-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 256M PARALLEL 84TWBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 256Mb (16M x 16) Memory Interface: Parallel Clock Frequency: 333MHz Write Cycle Time - Word, Page: 15ns Access Time: 450ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 84-TFBGA Supplier Device Package: 84-TWBGA (8x12.5)	パッケージ: 84-TFBGA	在庫6,288	DRAM	SDRAM - DDR2	256Mb (16M x 16)	Parallel	333MHz	15ns	450ps	1.7 V ~ 1.9 V	-40°C ~ 85°C (TC)	Surface Mount	84-TFBGA	84-TWBGA (8x12.5)
S26HL01GTFPBHB020	Infineon Technologies	IC FLASH 1GBIT HYPERBUS 24FBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 1Gbit Memory Interface: HyperBus Clock Frequency: 166 MHz Write Cycle Time - Word, Page: 1.7ms Access Time: 6.5 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 24-VBGA Supplier Device Package: 24-FBGA (8x8)	パッケージ: -	在庫3,900	FLASH	FLASH - NOR (SLC)	1Gbit	HyperBus	166 MHz	1.7ms	6.5 ns	2.7V ~ 3.6V	-40°C ~ 105°C (TA)	Surface Mount	24-VBGA	24-FBGA (8x8)
W25Q128FWBIQ	Winbond Electronics	IC FLASH 128MBIT SPI 24TFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mbit Memory Interface: SPI - Quad I/O, QPI Clock Frequency: 104 MHz Write Cycle Time - Word, Page: 60µs, 5ms Access Time: - Voltage - Supply: 1.65V ~ 1.95V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-TFBGA (6x8)	パッケージ: -	Request a Quote	FLASH	FLASH - NOR	128Mbit	SPI - Quad I/O, QPI	104 MHz	60µs, 5ms	-	1.65V ~ 1.95V	-40°C ~ 85°C (TA)	Surface Mount	24-TBGA	24-TFBGA (6x8)
IS66WVH8M8DALL-200B1LI	ISSI, Integrated Silicon Solution Inc	64Mb, HyperRAM, 8Mbx8, 1.8V, 200 Memory Type: Volatile Memory Format: PSRAM Technology: PSRAM (Pseudo SRAM) Memory Size: 64Mbit Memory Interface: HyperBus Clock Frequency: 200 MHz Write Cycle Time - Word, Page: 35ns Access Time: 35 ns Voltage - Supply: 1.7V ~ 1.95V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-TFBGA (6x8)	パッケージ: -	Request a Quote	PSRAM	PSRAM (Pseudo SRAM)	64Mbit	HyperBus	200 MHz	35ns	35 ns	1.7V ~ 1.95V	-40°C ~ 85°C (TA)	Surface Mount	24-TBGA	24-TFBGA (6x8)
W97BH2MBVA1I	Winbond Electronics	IC DRAM 2GBIT HSUL 12 134VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2-S4B Memory Size: 2Gbit Memory Interface: HSUL_12 Clock Frequency: 533 MHz Write Cycle Time - Word, Page: 15ns Access Time: - Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 134-VFBGA Supplier Device Package: 134-VFBGA (10x11.5)	パッケージ: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR2-S4B	2Gbit	HSUL_12	533 MHz	15ns	-	1.14V ~ 1.3V, 1.7V ~ 1.95V	-40°C ~ 85°C (TC)	Surface Mount	134-VFBGA	134-VFBGA (10x11.5)
NLQ26PFS-6NIT-TR	Insignis Technology Corporation	LPDDR4 2GB X16 3200MHZ CL22 10X1 Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 2Gbit Memory Interface: LVSTL Clock Frequency: 1.6 GHz Write Cycle Time - Word, Page: 18ns Access Time: 3.5 ns Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 200-WFBGA Supplier Device Package: 200-FBGA (10x14.5)	パッケージ: -	在庫6,000	DRAM	SDRAM - Mobile LPDDR4	2Gbit	LVSTL	1.6 GHz	18ns	3.5 ns	1.06V ~ 1.17V, 1.7V ~ 1.95V	-40°C ~ 85°C (TC)	Surface Mount	200-WFBGA	200-FBGA (10x14.5)
CY15V104QSN-108BFXIT	Infineon Technologies	FRAM Memory Type: Non-Volatile Memory Format: FRAM Technology: FRAM (Ferroelectric RAM) Memory Size: 4Mbit Memory Interface: SPI - Quad I/O Clock Frequency: 108 MHz Write Cycle Time - Word, Page: - Access Time: 6.7 ns Voltage - Supply: 1.71V ~ 1.89V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-UFLGA Supplier Device Package: 8-UFLGA (3.28x3.23)	パッケージ: -	Request a Quote	FRAM	FRAM (Ferroelectric RAM)	4Mbit	SPI - Quad I/O	108 MHz	-	6.7 ns	1.71V ~ 1.89V	-40°C ~ 85°C (TA)	Surface Mount	8-UFLGA	8-UFLGA (3.28x3.23)
SM662GXA-BDST	Silicon Motion, Inc.	IC FLASH 128GBIT EMMC 100BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (TLC) Memory Size: 128Gbit Memory Interface: eMMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -25°C ~ 85°C Mounting Type: Surface Mount Package / Case: 100-LBGA Supplier Device Package: 100-BGA (14x18)	パッケージ: -	Request a Quote	FLASH	FLASH - NAND (TLC)	128Gbit	eMMC	-	-	-	-	-25°C ~ 85°C	Surface Mount	100-LBGA	100-BGA (14x18)

CB021-80075

Cypress Semiconductor Corp

IC FLASH NOR

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫7,920

-

MTFC4GMTEA-1F WT

Micron Technology Inc.

IC FLASH 32GBIT 153WFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 32Gb (4G x 8)
Memory Interface: MMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 153-WFBGA
Supplier Device Package: 153-WFBGA (11.5x13)

パッケージ: 153-WFBGA

在庫3,968

FLASH

FLASH - NAND

32Gb (4G x 8)

MMC

-

2.7 V ~ 3.6 V

-25°C ~ 85°C (TA)

Surface Mount

153-WFBGA

153-WFBGA (11.5x13)

MT29C1G12MAAJAFAMD-6 IT

Micron Technology Inc.

IC FLASH/LPDRAM 1.5GBIT 130VFBGA

Memory Type: Non-Volatile
Memory Format: FLASH, RAM
Technology: FLASH - NAND, Mobile LPDRAM
Memory Size: 1Gb (128M x 8)(NAND), 512Mb (16M x 32)(LPDRAM)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 130-VFBGA
Supplier Device Package: 130-VFBGA (8x9)

パッケージ: 130-VFBGA

在庫7,088

FLASH, RAM

FLASH - NAND, Mobile LPDRAM

1Gb (128M x 8)(NAND), 512Mb (16M x 32)(LPDRAM)

Parallel

166MHz

-

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

130-VFBGA

130-VFBGA (8x9)

W972GG8JB-25

Winbond Electronics

IC SDRAM 2GBIT 400MHZ 60WBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 2Gb (256M x 8)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 400ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-WBGA (11x11.5)

パッケージ: 60-TFBGA

在庫33,960

DRAM

SDRAM - DDR2

2Gb (256M x 8)

Parallel

200MHz

15ns

400ps

1.7 V ~ 1.9 V

0°C ~ 85°C (TC)

Surface Mount

60-TFBGA

60-WBGA (11x11.5)

SST39LF040-55-4I-B3KE

Microchip Technology

IC FLASH 4MBIT 55NS 48TFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 4Mb (512K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20µs
Access Time: 55ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-TFBGA

パッケージ: 48-TFBGA

在庫6,320

FLASH

4Mb (512K x 8)

Parallel

-

20µs

55ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFBGA

IDT71V424YL10PHI8

IDT, Integrated Device Technology Inc

IC SRAM 4MBIT 10NS 44TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (512K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II

パッケージ: 44-TSOP (0.400", 10.16mm Width)

在庫4,320

SRAM

SRAM - Asynchronous

4Mb (512K x 8)

Parallel

-

10ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

44-TSOP (0.400", 10.16mm Width)

44-TSOP II

IS42S16800E-75EBLI-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 128MBIT 133MHZ 54TFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 128Mb (8M x 16)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TFBGA
Supplier Device Package: 54-TFBGA (8x8)

パッケージ: 54-TFBGA

在庫4,800

DRAM

SDRAM

128Mb (8M x 16)

Parallel

133MHz

-

5.4ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

54-TFBGA

54-TFBGA (8x8)

AT45DB041D-MU-2.5

Microchip Technology

IC FLASH 4MBIT 50MHZ 8VDFN

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 4Mb (264 Bytes x 2048 pages)
Memory Interface: SPI
Clock Frequency: 50MHz
Write Cycle Time - Word, Page: 4ms
Access Time: -
Voltage - Supply: 2.5 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Supplier Device Package: 8-VDFN (6x5)

パッケージ: 8-VDFN Exposed Pad

在庫5,472

FLASH

4Mb (264 Bytes x 2048 pages)

SPI

50MHz

4ms

-

2.5 V ~ 3.6 V

-40°C ~ 85°C (TC)

Surface Mount

8-VDFN Exposed Pad

8-VDFN (6x5)

MT46V32M16FN-75:C TR

Micron Technology Inc.

IC SDRAM 512MBIT 133MHZ 60FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 512Mb (32M x 16)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 750ps
Voltage - Supply: 2.3 V ~ 2.7 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-FBGA (10x12.5)

パッケージ: 60-TFBGA

在庫5,408

DRAM

SDRAM - DDR

512Mb (32M x 16)

Parallel

133MHz

15ns

750ps

2.3 V ~ 2.7 V

0°C ~ 70°C (TA)

Surface Mount

60-TFBGA

60-FBGA (10x12.5)

MT48LC32M8A2TG-75:D TR

Micron Technology Inc.

IC SDRAM 256MBIT 133MHZ 54TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 256Mb (32M x 8)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II

パッケージ: 54-TSOP (0.400", 10.16mm Width)

在庫7,456

DRAM

SDRAM

256Mb (32M x 8)

Parallel

133MHz

15ns

5.4ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

54-TSOP (0.400", 10.16mm Width)

54-TSOP II

AT25160N-10SI-1.8

Microchip Technology

IC EEPROM 16KBIT 3MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kb (2K x 8)
Memory Interface: SPI
Clock Frequency: 3MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.8 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫7,264

EEPROM

16Kb (2K x 8)

SPI

3MHz

5ms

-

1.8 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

AT24C04N-10SC-1.8

Microchip Technology

IC EEPROM 4KBIT 400KHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 4Kb (512 x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫4,688

EEPROM

4Kb (512 x 8)

I2C

400kHz

5ms

900ns

1.8 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

NM93C46EN

Fairchild/ON Semiconductor

IC EEPROM 1KBIT 1MHZ 8DIP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kb (64 x 16)
Memory Interface: SPI
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 10ms
Access Time: -
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-DIP

パッケージ: 8-DIP (0.300", 7.62mm)

在庫2,176

EEPROM

1Kb (64 x 16)

SPI

1MHz

10ms

-

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Through Hole

8-DIP (0.300", 7.62mm)

8-DIP

70V27L35PF8

IDT, Integrated Device Technology Inc

IC SRAM 512KBIT 35NS 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 512Kb (32K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 35ns
Access Time: 35ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

パッケージ: 100-LQFP

在庫3,888

SRAM

SRAM - Dual Port, Asynchronous

512Kb (32K x 16)

Parallel

-

35ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

71V65703S85BQGI

IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 8.5NS 165CABGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous ZBT
Memory Size: 9Mb (256K x 36)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 8.5ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-CABGA (13x15)

パッケージ: 165-TBGA

在庫4,256

SRAM

SRAM - Synchronous ZBT

9Mb (256K x 36)

Parallel

-

8.5ns

3.135 V ~ 3.465 V

-40°C ~ 85°C (TA)

Surface Mount

165-TBGA

165-CABGA (13x15)

IS25WP032D-JKLE-TR

ISSI, Integrated Silicon Solution Inc

32MB QPI/QSPI WSON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 32Mb (4M x 8)
Memory Interface: SPI - Quad I/O, QPI, DTR
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 800µs
Access Time: -
Voltage - Supply: 1.65 V ~ 1.95 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (6x5)

パッケージ: 8-WDFN Exposed Pad

在庫6,128

FLASH

FLASH - NOR

32Mb (4M x 8)

SPI - Quad I/O, QPI, DTR

133MHz

800µs

-

1.65 V ~ 1.95 V

-40°C ~ 105°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WSON (6x5)

25LC640A-E/P

Microchip Technology

IC EEPROM 64KBIT 10MHZ 8DIP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 64Kb (8K x 8)
Memory Interface: SPI
Clock Frequency: 10MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

パッケージ: 8-DIP (0.300", 7.62mm)

在庫4,992

EEPROM

64Kb (8K x 8)

SPI

10MHz

5ms

-

2.5 V ~ 5.5 V

-40°C ~ 125°C (TA)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

CAT25128VP2I-GT3

ON Semiconductor

IC EEPROM 128KBIT 10MHZ 8TDFN

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 128Kb (16K x 8)
Memory Interface: SPI
Clock Frequency: 10MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WFDFN Exposed Pad
Supplier Device Package: 8-TDFN (2x3)

パッケージ: 8-WFDFN Exposed Pad

在庫4,256

EEPROM

128Kb (16K x 8)

SPI

10MHz

5ms

-

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-WFDFN Exposed Pad

8-TDFN (2x3)

CY7C1372DV25-167AXC

Cypress Semiconductor Corp

IC SRAM 18MBIT 167MHZ 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 18Mb (1M x 18)
Memory Interface: Parallel
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: -
Access Time: 3.4ns
Voltage - Supply: 2.375 V ~ 2.625 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20)

パッケージ: 100-LQFP

在庫8,964

SRAM

SRAM - Synchronous

18Mb (1M x 18)

Parallel

167MHz

-

3.4ns

2.375 V ~ 2.625 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x20)

M24C02-FMC6TG

STMicroelectronics

IC EEPROM 2KBIT 400KHZ 8UFDFPN

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (256 x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 1.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Supplier Device Package: 8-UFDFPN (2x3)

パッケージ: 8-UFDFN Exposed Pad

在庫6,384

EEPROM

2Kb (256 x 8)

I2C

400kHz

5ms

900ns

1.7 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-UFDFN Exposed Pad

8-UFDFPN (2x3)

MT48LC64M8A2TG-75:C

Alliance Memory, Inc.

IC SDRAM 512MBIT 133MHZ 54TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 512Mb (64M x 8)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP

パッケージ: 54-TSOP (0.400", 10.16mm Width)

在庫6,240

DRAM

SDRAM

512Mb (64M x 8)

Parallel

133MHz

15ns

5.4ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

54-TSOP (0.400", 10.16mm Width)

54-TSOP

BR93G66FJ-3GTE2

Rohm Semiconductor

MICROWIRE BUS 4KBIT(256X16BIT) E

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 4Kb (256 x 16)
Memory Interface: SPI
Clock Frequency: 3MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP-J

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫13,632

EEPROM

4Kb (256 x 16)

SPI

3MHz

5ms

-

1.7 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP-J

IS43DR16160B-3DBI-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 256M PARALLEL 84TWBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 256Mb (16M x 16)
Memory Interface: Parallel
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 450ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 84-TFBGA
Supplier Device Package: 84-TWBGA (8x12.5)

パッケージ: 84-TFBGA

在庫6,288

DRAM

SDRAM - DDR2

256Mb (16M x 16)

Parallel

333MHz

15ns

450ps

1.7 V ~ 1.9 V

-40°C ~ 85°C (TC)

Surface Mount

84-TFBGA

84-TWBGA (8x12.5)

S26HL01GTFPBHB020

Infineon Technologies

IC FLASH 1GBIT HYPERBUS 24FBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 1Gbit
Memory Interface: HyperBus
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: 1.7ms
Access Time: 6.5 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Supplier Device Package: 24-FBGA (8x8)

パッケージ: -

在庫3,900

FLASH

FLASH - NOR (SLC)

1Gbit

HyperBus

166 MHz

1.7ms

6.5 ns

2.7V ~ 3.6V

-40°C ~ 105°C (TA)

Surface Mount

24-VBGA

24-FBGA (8x8)

W25Q128FWBIQ

Winbond Electronics

IC FLASH 128MBIT SPI 24TFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mbit
Memory Interface: SPI - Quad I/O, QPI
Clock Frequency: 104 MHz
Write Cycle Time - Word, Page: 60µs, 5ms
Access Time: -
Voltage - Supply: 1.65V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-TFBGA (6x8)

パッケージ: -

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FLASH

FLASH - NOR

128Mbit

SPI - Quad I/O, QPI

104 MHz

60µs, 5ms

-

1.65V ~ 1.95V

-40°C ~ 85°C (TA)

Surface Mount

24-TBGA

24-TFBGA (6x8)

IS66WVH8M8DALL-200B1LI

ISSI, Integrated Silicon Solution Inc

64Mb, HyperRAM, 8Mbx8, 1.8V, 200

Memory Type: Volatile
Memory Format: PSRAM
Technology: PSRAM (Pseudo SRAM)
Memory Size: 64Mbit
Memory Interface: HyperBus
Clock Frequency: 200 MHz
Write Cycle Time - Word, Page: 35ns
Access Time: 35 ns
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-TFBGA (6x8)

パッケージ: -

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PSRAM

PSRAM (Pseudo SRAM)

64Mbit

HyperBus

200 MHz

35ns

35 ns

1.7V ~ 1.95V

-40°C ~ 85°C (TA)

Surface Mount

24-TBGA

24-TFBGA (6x8)

W97BH2MBVA1I

Winbond Electronics

IC DRAM 2GBIT HSUL 12 134VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2-S4B
Memory Size: 2Gbit
Memory Interface: HSUL_12
Clock Frequency: 533 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: -
Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 134-VFBGA
Supplier Device Package: 134-VFBGA (10x11.5)

パッケージ: -

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DRAM

SDRAM - Mobile LPDDR2-S4B

2Gbit

HSUL_12

533 MHz

15ns

-

1.14V ~ 1.3V, 1.7V ~ 1.95V

-40°C ~ 85°C (TC)

Surface Mount

134-VFBGA

134-VFBGA (10x11.5)

NLQ26PFS-6NIT-TR

Insignis Technology Corporation

LPDDR4 2GB X16 3200MHZ CL22 10X1

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 2Gbit
Memory Interface: LVSTL
Clock Frequency: 1.6 GHz
Write Cycle Time - Word, Page: 18ns
Access Time: 3.5 ns
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 200-WFBGA
Supplier Device Package: 200-FBGA (10x14.5)

パッケージ: -

在庫6,000

DRAM

SDRAM - Mobile LPDDR4

2Gbit

LVSTL

1.6 GHz

18ns

3.5 ns

1.06V ~ 1.17V, 1.7V ~ 1.95V

-40°C ~ 85°C (TC)

Surface Mount

200-WFBGA

200-FBGA (10x14.5)

CY15V104QSN-108BFXIT

Infineon Technologies

FRAM

Memory Type: Non-Volatile
Memory Format: FRAM
Technology: FRAM (Ferroelectric RAM)
Memory Size: 4Mbit
Memory Interface: SPI - Quad I/O
Clock Frequency: 108 MHz
Write Cycle Time - Word, Page: -
Access Time: 6.7 ns
Voltage - Supply: 1.71V ~ 1.89V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UFLGA
Supplier Device Package: 8-UFLGA (3.28x3.23)

パッケージ: -

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FRAM

FRAM (Ferroelectric RAM)

4Mbit

SPI - Quad I/O

108 MHz

-

6.7 ns

1.71V ~ 1.89V

-40°C ~ 85°C (TA)

Surface Mount

8-UFLGA

8-UFLGA (3.28x3.23)

SM662GXA-BDST

Silicon Motion, Inc.

IC FLASH 128GBIT EMMC 100BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (TLC)
Memory Size: 128Gbit
Memory Interface: eMMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -25°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 100-LBGA
Supplier Device Package: 100-BGA (14x18)

パッケージ: -

Request a Quote

FLASH

FLASH - NAND (TLC)

128Gbit

eMMC

-

-25°C ~ 85°C

Surface Mount

100-LBGA

100-BGA (14x18)