ページ 701 - メモリ | 集積回路（IC）

部品番号	メーカ	説明	パッケージ	在庫	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
MT42L128M32D1U80MWC1	Micron Technology Inc.	IC SDRAM 4GBIT Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 4Gb (128M x 32) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.3 V Operating Temperature: -25°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫3,344	DRAM	SDRAM - Mobile LPDDR2	4Gb (128M x 32)	Parallel	-	-	-	1.14 V ~ 1.3 V	-25°C ~ 85°C (TC)	-	-	-
PZ28F032M29EWLA	Micron Technology Inc.	IC FLASH 32MBIT 60NS 48BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 32Mb (4M x 8, 2M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 60ns Access Time: 60ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-VFBGA Supplier Device Package: 48-BGA (6x8)	パッケージ: 48-VFBGA	在庫5,168	FLASH	FLASH - NOR	32Mb (4M x 8, 2M x 16)	Parallel	-	60ns	60ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-VFBGA	48-BGA (6x8)
MT29F32G08AECBBH1-12:B	Micron Technology Inc.	IC FLASH 32GBIT 83MHZ 100VBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 32Gb (4G x 8) Memory Interface: Parallel Clock Frequency: 83MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-VBGA Supplier Device Package: 100-VBGA (12x18)	パッケージ: 100-VBGA	在庫2,000	FLASH	FLASH - NAND	32Gb (4G x 8)	Parallel	83MHz	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	100-VBGA	100-VBGA (12x18)
IDT71V424YS12PHI8	IDT, Integrated Device Technology Inc	IC SRAM 4MBIT 12NS 44TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 4Mb (512K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 12ns Access Time: 12ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP II	パッケージ: 44-TSOP (0.400", 10.16mm Width)	在庫3,760	SRAM	SRAM - Asynchronous	4Mb (512K x 8)	Parallel	-	12ns	12ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	44-TSOP (0.400", 10.16mm Width)	44-TSOP II
CY7C1041DV33-10BVJXI	Cypress Semiconductor Corp	IC SRAM 4MBIT 10NS 48VFBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 4Mb (256K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-VFBGA Supplier Device Package: 48-VFBGA (6x8)	パッケージ: 48-VFBGA	在庫3,760	SRAM	SRAM - Asynchronous	4Mb (256K x 16)	Parallel	-	10ns	10ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-VFBGA	48-VFBGA (6x8)
CY62148DV30LL-70ZSXA	Cypress Semiconductor Corp	IC SRAM 4MBIT 70NS 32TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 4Mb (512K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: 2.2 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 32-SOIC (0.400", 10.16mm Width) Supplier Device Package: 32-TSOP II	パッケージ: 32-SOIC (0.400", 10.16mm Width)	在庫4,224	SRAM	SRAM - Asynchronous	4Mb (512K x 8)	Parallel	-	70ns	70ns	2.2 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	32-SOIC (0.400", 10.16mm Width)	32-TSOP II
CY14B256L-SP45XCT	Cypress Semiconductor Corp	IC NVSRAM 256KBIT 45NS 48SSOP Memory Type: Non-Volatile Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 45ns Access Time: 45ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 48-BSSOP (0.295", 7.50mm Width) Supplier Device Package: 48-SSOP	パッケージ: 48-BSSOP (0.295", 7.50mm Width)	在庫2,224	NVSRAM	NVSRAM (Non-Volatile SRAM)	256Kb (32K x 8)	Parallel	-	45ns	45ns	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	48-BSSOP (0.295", 7.50mm Width)	48-SSOP
AT28C64-12PC	Microchip Technology	IC EEPROM 64KBIT 120NS 28DIP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 64Kb (8K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 1ms Access Time: 120ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TC) Mounting Type: Through Hole Package / Case: 28-DIP (0.600", 15.24mm) Supplier Device Package: 28-PDIP	パッケージ: 28-DIP (0.600", 15.24mm)	在庫201,408	EEPROM	EEPROM	64Kb (8K x 8)	Parallel	-	1ms	120ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TC)	Through Hole	28-DIP (0.600", 15.24mm)	28-PDIP
AT29LV010A-15TI	Microchip Technology	IC FLASH 1MBIT 150NS 32TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 1Mb (128K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20ms Access Time: 150ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 32-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 32-TSOP	パッケージ: 32-TFSOP (0.724", 18.40mm Width)	在庫28,524	FLASH	FLASH	1Mb (128K x 8)	Parallel	-	20ms	150ns	3 V ~ 3.6 V	-40°C ~ 85°C (TC)	Surface Mount	32-TFSOP (0.724", 18.40mm Width)	32-TSOP
CY7C1061G30-10BV1XET	Cypress Semiconductor Corp	IC SRAM 16MBIT 10NS 48BGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 16Mb (1M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10ns Voltage - Supply: 2.2 V ~ 3.6 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 48-VFBGA Supplier Device Package: 48-VFBGA (6x8)	パッケージ: 48-VFBGA	在庫6,864	SRAM	SRAM - Asynchronous	16Mb (1M x 16)	Parallel	-	10ns	10ns	2.2 V ~ 3.6 V	-40°C ~ 125°C (TA)	Surface Mount	48-VFBGA	48-VFBGA (6x8)
71V65903S85BG8	IDT, Integrated Device Technology Inc	IC SRAM 9MBIT 8.5NS 119BGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous ZBT Memory Size: 9Mb (512K x 18) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 8.5ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 119-BGA Supplier Device Package: 119-PBGA (14x22)	パッケージ: 119-BGA	在庫7,584	SRAM	SRAM - Synchronous ZBT	9Mb (512K x 18)	Parallel	-	-	8.5ns	3.135 V ~ 3.465 V	0°C ~ 70°C (TA)	Surface Mount	119-BGA	119-PBGA (14x22)
MT40A512M16JY-083E:B TR	Micron Technology Inc.	IC SDRAM 8GBIT 1.2GHZ 96BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 8Gb (512M x 16) Memory Interface: Parallel Clock Frequency: 1.2GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.26 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-FBGA (8x14)	パッケージ: 96-TFBGA	在庫3,856	DRAM	SDRAM - DDR4	8Gb (512M x 16)	Parallel	1.2GHz	-	-	1.14 V ~ 1.26 V	0°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-FBGA (8x14)
MX25L25635EZNI-12G	Macronix	IC FLASH 256MBIT 80MHZ 8WSON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mb (32M x 8) Memory Interface: SPI Clock Frequency: 80MHz Write Cycle Time - Word, Page: 300µs, 5ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (8x6)	パッケージ: 8-WDFN Exposed Pad	在庫3,216	FLASH	FLASH - NOR	256Mb (32M x 8)	SPI	80MHz	300µs, 5ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (8x6)
MB85R256FPNF-G-JNERE2	Fujitsu Electronics America, Inc.	IC FRAM 256KBIT 150NS 28SOP Memory Type: Non-Volatile Memory Format: FRAM Technology: FRAM (Ferroelectric RAM) Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 150ns Access Time: 150ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 28-SOIC (0.342", 8.69mm Width) Supplier Device Package: 28-SOP	パッケージ: 28-SOIC (0.342", 8.69mm Width)	在庫600,000	FRAM	FRAM (Ferroelectric RAM)	256Kb (32K x 8)	Parallel	-	150ns	150ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	28-SOIC (0.342", 8.69mm Width)	28-SOP
CY14B116N-ZSP25XI	Cypress Semiconductor Corp	IC NVSRAM 16MBIT 25NS 54TSOP Memory Type: Non-Volatile Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Memory Size: 16Mb (1M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Supplier Device Package: 54-TSOP II	パッケージ: 54-TSOP (0.400", 10.16mm Width)	在庫3,904	NVSRAM	NVSRAM (Non-Volatile SRAM)	16Mb (1M x 16)	Parallel	-	25ns	25ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	54-TSOP (0.400", 10.16mm Width)	54-TSOP II
CY7C2262XV18-366BZXC	Cypress Semiconductor Corp	IC SRAM 36MBIT 366MHZ 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, QDR II+ Memory Size: 36Mb (2M x 18) Memory Interface: Parallel Clock Frequency: 366MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FBGA (13x15)	パッケージ: 165-LBGA	在庫4,832	SRAM	SRAM - Synchronous, QDR II+	36Mb (2M x 18)	Parallel	366MHz	-	-	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	Surface Mount	165-LBGA	165-FBGA (13x15)
AS7C1026B-10TCN	Alliance Memory, Inc.	IC SRAM 1MBIT 10NS 44TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 1Mb (64K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP II	パッケージ: 44-TSOP (0.400", 10.16mm Width)	在庫8,784	SRAM	SRAM - Asynchronous	1Mb (64K x 16)	Parallel	-	10ns	10ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	44-TSOP (0.400", 10.16mm Width)	44-TSOP II
M95256-WMN6TP	STMicroelectronics	IC EEPROM 256KBIT 5MHZ 8SO Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 256Kb (32K x 8) Memory Interface: SPI Clock Frequency: 20MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫270,276	EEPROM	EEPROM	256Kb (32K x 8)	SPI	20MHz	5ms	-	2.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
MT40A512M16LY-062E:E	Micron Technology Inc.	IC DRAM 8G PARALLEL 1.6GHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 8Gb (512M x 16) Memory Interface: Parallel Clock Frequency: 1.6GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.26 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫7,184	DRAM	SDRAM - DDR4	8Gb (512M x 16)	Parallel	1.6GHz	-	-	1.14 V ~ 1.26 V	0°C ~ 95°C (TC)	-	-	-
24AA16SC-I/WF16K	Microchip Technology	IC EEPROM 16K I2C 400KHZ WAFER Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 16Kb (2K x 8) Memory Interface: I²C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 1.7 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	パッケージ: Die	在庫5,136	EEPROM	EEPROM	16Kb (2K x 8)	I²C	400kHz	5ms	900ns	1.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	Die	Die
MT53B512M16D1Z11MWC2 MS	Micron Technology Inc.	LPDDR4 8G DIE 512MX16 Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫2,128	-	-	-	-	-	-	-	-	-	-	-	-
W9825G6JB-6I-TR	Winbond Electronics	IC DRAM 256MBIT LVTTL 54TFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 256Mbit Memory Interface: LVTTL Clock Frequency: 166 MHz Write Cycle Time - Word, Page: - Access Time: 5 ns Voltage - Supply: 3V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 54-TFBGA Supplier Device Package: 54-TFBGA (8x8)	パッケージ: -	Request a Quote	DRAM	SDRAM	256Mbit	LVTTL	166 MHz	-	5 ns	3V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	54-TFBGA	54-TFBGA (8x8)
S25HL01GTFABHM030	Infineon Technologies	IC FLASH 1GBIT SPI/QUAD 24FBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 1Gbit Memory Interface: SPI - Quad I/O, QPI Clock Frequency: 166 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 24-VBGA Supplier Device Package: 24-FBGA (8x8)	パッケージ: -	Request a Quote	FLASH	FLASH - NOR (SLC)	1Gbit	SPI - Quad I/O, QPI	166 MHz	-	-	2.7V ~ 3.6V	-40°C ~ 125°C (TA)	Surface Mount	24-VBGA	24-FBGA (8x8)
BY25Q16BSSJG-T	BYTe Semiconductor	16 MBIT, 3.0V (2.7V TO 3.6V), -4 Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 16Mbit Memory Interface: SPI - Quad I/O, QPI Clock Frequency: 108 MHz Write Cycle Time - Word, Page: 60µs, 4ms Access Time: 7 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Supplier Device Package: 8-SOP	パッケージ: -	Request a Quote	FLASH	FLASH - NOR (SLC)	16Mbit	SPI - Quad I/O, QPI	108 MHz	60µs, 4ms	7 ns	2.7V ~ 3.6V	-40°C ~ 105°C (TA)	Surface Mount	8-SOIC (0.209", 5.30mm Width)	8-SOP
FM93C46TLM8	Fairchild Semiconductor	IC EEPROM 1KBIT MICROWIRE 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kbit Memory Interface: Microwire Clock Frequency: 250 kHz Write Cycle Time - Word, Page: 15ms Access Time: - Voltage - Supply: 2.7V ~ 5.5V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	パッケージ: -	Request a Quote	EEPROM	EEPROM	1Kbit	Microwire	250 kHz	15ms	-	2.7V ~ 5.5V	0°C ~ 70°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
7007L12J8	Renesas Electronics Corporation	IC RAM Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 256Kbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 12ns Access Time: 12 ns Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 68-LCC (J-Lead) Supplier Device Package: 68-PLCC (24.21x24.21)	パッケージ: -	Request a Quote	SRAM	SRAM - Dual Port, Asynchronous	256Kbit	Parallel	-	12ns	12 ns	4.5V ~ 5.5V	0°C ~ 70°C (TA)	Surface Mount	68-LCC (J-Lead)	68-PLCC (24.21x24.21)
MT53E768M32D4DE-046-IT-E-TR	Micron Technology Inc.	IC DRAM Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4X Memory Size: 24Gbit Memory Interface: Parallel Clock Frequency: 2.133 GHz Write Cycle Time - Word, Page: 18ns Access Time: 3.5 ns Voltage - Supply: 1.06V ~ 1.17V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 200-TFBGA Supplier Device Package: 200-TFBGA (10x14.5)	パッケージ: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR4X	24Gbit	Parallel	2.133 GHz	18ns	3.5 ns	1.06V ~ 1.17V	-40°C ~ 95°C (TC)	Surface Mount	200-TFBGA	200-TFBGA (10x14.5)
CAT25020ZGI-26737	Catalyst Semiconductor Inc.	IC EEPROM 2KBIT SPI 10MHZ 8MSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kbit Memory Interface: SPI Clock Frequency: - Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 2.5V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: 8-MSOP	パッケージ: -	Request a Quote	EEPROM	EEPROM	2Kbit	SPI	-	5ms	-	2.5V ~ 5.5V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	8-MSOP

MT42L128M32D1U80MWC1

Micron Technology Inc.

IC SDRAM 4GBIT

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 4Gb (128M x 32)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.3 V
Operating Temperature: -25°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫3,344

DRAM

SDRAM - Mobile LPDDR2

4Gb (128M x 32)

Parallel

-

1.14 V ~ 1.3 V

-25°C ~ 85°C (TC)

-

PZ28F032M29EWLA

Micron Technology Inc.

IC FLASH 32MBIT 60NS 48BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 32Mb (4M x 8, 2M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 60ns
Access Time: 60ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Supplier Device Package: 48-BGA (6x8)

パッケージ: 48-VFBGA

在庫5,168

FLASH

FLASH - NOR

32Mb (4M x 8, 2M x 16)

Parallel

-

60ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-VFBGA

48-BGA (6x8)

MT29F32G08AECBBH1-12:B

Micron Technology Inc.

IC FLASH 32GBIT 83MHZ 100VBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 32Gb (4G x 8)
Memory Interface: Parallel
Clock Frequency: 83MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-VBGA
Supplier Device Package: 100-VBGA (12x18)

パッケージ: 100-VBGA

在庫2,000

FLASH

FLASH - NAND

32Gb (4G x 8)

Parallel

83MHz

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

100-VBGA

100-VBGA (12x18)

IDT71V424YS12PHI8

IDT, Integrated Device Technology Inc

IC SRAM 4MBIT 12NS 44TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (512K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 12ns
Access Time: 12ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II

パッケージ: 44-TSOP (0.400", 10.16mm Width)

在庫3,760

SRAM

SRAM - Asynchronous

4Mb (512K x 8)

Parallel

-

12ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

44-TSOP (0.400", 10.16mm Width)

44-TSOP II

CY7C1041DV33-10BVJXI

Cypress Semiconductor Corp

IC SRAM 4MBIT 10NS 48VFBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (256K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Supplier Device Package: 48-VFBGA (6x8)

パッケージ: 48-VFBGA

在庫3,760

SRAM

SRAM - Asynchronous

4Mb (256K x 16)

Parallel

-

10ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-VFBGA

48-VFBGA (6x8)

CY62148DV30LL-70ZSXA

Cypress Semiconductor Corp

IC SRAM 4MBIT 70NS 32TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (512K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: 2.2 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Supplier Device Package: 32-TSOP II

パッケージ: 32-SOIC (0.400", 10.16mm Width)

在庫4,224

SRAM

SRAM - Asynchronous

4Mb (512K x 8)

Parallel

-

70ns

2.2 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

32-SOIC (0.400", 10.16mm Width)

32-TSOP II

CY14B256L-SP45XCT

Cypress Semiconductor Corp

IC NVSRAM 256KBIT 45NS 48SSOP

Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Supplier Device Package: 48-SSOP

パッケージ: 48-BSSOP (0.295", 7.50mm Width)

在庫2,224

NVSRAM

NVSRAM (Non-Volatile SRAM)

256Kb (32K x 8)

Parallel

-

45ns

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

48-BSSOP (0.295", 7.50mm Width)

48-SSOP

AT28C64-12PC

Microchip Technology

IC EEPROM 64KBIT 120NS 28DIP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 64Kb (8K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 1ms
Access Time: 120ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Through Hole
Package / Case: 28-DIP (0.600", 15.24mm)
Supplier Device Package: 28-PDIP

パッケージ: 28-DIP (0.600", 15.24mm)

在庫201,408

EEPROM

64Kb (8K x 8)

Parallel

-

1ms

120ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TC)

Through Hole

28-DIP (0.600", 15.24mm)

28-PDIP

AT29LV010A-15TI

Microchip Technology

IC FLASH 1MBIT 150NS 32TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 1Mb (128K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20ms
Access Time: 150ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 32-TSOP

パッケージ: 32-TFSOP (0.724", 18.40mm Width)

在庫28,524

FLASH

1Mb (128K x 8)

Parallel

-

20ms

150ns

3 V ~ 3.6 V

-40°C ~ 85°C (TC)

Surface Mount

32-TFSOP (0.724", 18.40mm Width)

32-TSOP

CY7C1061G30-10BV1XET

Cypress Semiconductor Corp

IC SRAM 16MBIT 10NS 48BGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Mb (1M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Voltage - Supply: 2.2 V ~ 3.6 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Supplier Device Package: 48-VFBGA (6x8)

パッケージ: 48-VFBGA

在庫6,864

SRAM

SRAM - Asynchronous

16Mb (1M x 16)

Parallel

-

10ns

2.2 V ~ 3.6 V

-40°C ~ 125°C (TA)

Surface Mount

48-VFBGA

48-VFBGA (6x8)

71V65903S85BG8

IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 8.5NS 119BGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous ZBT
Memory Size: 9Mb (512K x 18)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 8.5ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 119-BGA
Supplier Device Package: 119-PBGA (14x22)

パッケージ: 119-BGA

在庫7,584

SRAM

SRAM - Synchronous ZBT

9Mb (512K x 18)

Parallel

-

8.5ns

3.135 V ~ 3.465 V

0°C ~ 70°C (TA)

Surface Mount

119-BGA

119-PBGA (14x22)

MT40A512M16JY-083E:B TR

Micron Technology Inc.

IC SDRAM 8GBIT 1.2GHZ 96BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 8Gb (512M x 16)
Memory Interface: Parallel
Clock Frequency: 1.2GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.26 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-FBGA (8x14)

パッケージ: 96-TFBGA

在庫3,856

DRAM

SDRAM - DDR4

8Gb (512M x 16)

Parallel

1.2GHz

-

1.14 V ~ 1.26 V

0°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-FBGA (8x14)

MX25L25635EZNI-12G

Macronix

IC FLASH 256MBIT 80MHZ 8WSON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mb (32M x 8)
Memory Interface: SPI
Clock Frequency: 80MHz
Write Cycle Time - Word, Page: 300µs, 5ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (8x6)

パッケージ: 8-WDFN Exposed Pad

在庫3,216

FLASH

FLASH - NOR

256Mb (32M x 8)

SPI

80MHz

300µs, 5ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WSON (8x6)

MB85R256FPNF-G-JNERE2

Fujitsu Electronics America, Inc.

IC FRAM 256KBIT 150NS 28SOP

Memory Type: Non-Volatile
Memory Format: FRAM
Technology: FRAM (Ferroelectric RAM)
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 150ns
Access Time: 150ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.342", 8.69mm Width)
Supplier Device Package: 28-SOP

パッケージ: 28-SOIC (0.342", 8.69mm Width)

在庫600,000

FRAM

FRAM (Ferroelectric RAM)

256Kb (32K x 8)

Parallel

-

150ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

28-SOIC (0.342", 8.69mm Width)

28-SOP

CY14B116N-ZSP25XI

Cypress Semiconductor Corp

IC NVSRAM 16MBIT 25NS 54TSOP

Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 16Mb (1M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II

パッケージ: 54-TSOP (0.400", 10.16mm Width)

在庫3,904

NVSRAM

NVSRAM (Non-Volatile SRAM)

16Mb (1M x 16)

Parallel

-

25ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

54-TSOP (0.400", 10.16mm Width)

54-TSOP II

CY7C2262XV18-366BZXC

Cypress Semiconductor Corp

IC SRAM 36MBIT 366MHZ 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QDR II+
Memory Size: 36Mb (2M x 18)
Memory Interface: Parallel
Clock Frequency: 366MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (13x15)

パッケージ: 165-LBGA

在庫4,832

SRAM

SRAM - Synchronous, QDR II+

36Mb (2M x 18)

Parallel

366MHz

-

1.7 V ~ 1.9 V

0°C ~ 70°C (TA)

Surface Mount

165-LBGA

165-FBGA (13x15)

AS7C1026B-10TCN

Alliance Memory, Inc.

IC SRAM 1MBIT 10NS 44TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (64K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II

パッケージ: 44-TSOP (0.400", 10.16mm Width)

在庫8,784

SRAM

SRAM - Asynchronous

1Mb (64K x 16)

Parallel

-

10ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

44-TSOP (0.400", 10.16mm Width)

44-TSOP II

M95256-WMN6TP

STMicroelectronics

IC EEPROM 256KBIT 5MHZ 8SO

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 256Kb (32K x 8)
Memory Interface: SPI
Clock Frequency: 20MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫270,276

EEPROM

256Kb (32K x 8)

SPI

20MHz

5ms

-

2.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

MT40A512M16LY-062E:E

Micron Technology Inc.

IC DRAM 8G PARALLEL 1.6GHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 8Gb (512M x 16)
Memory Interface: Parallel
Clock Frequency: 1.6GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.26 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫7,184

DRAM

SDRAM - DDR4

8Gb (512M x 16)

Parallel

1.6GHz

-

1.14 V ~ 1.26 V

0°C ~ 95°C (TC)

-

24AA16SC-I/WF16K

Microchip Technology

IC EEPROM 16K I2C 400KHZ WAFER

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kb (2K x 8)
Memory Interface: I²C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 1.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

パッケージ: Die

在庫5,136

EEPROM

16Kb (2K x 8)

I²C

400kHz

5ms

900ns

1.7 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

Die

MT53B512M16D1Z11MWC2 MS

Micron Technology Inc.

LPDDR4 8G DIE 512MX16

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫2,128

-

W9825G6JB-6I-TR

Winbond Electronics

IC DRAM 256MBIT LVTTL 54TFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 256Mbit
Memory Interface: LVTTL
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: -
Access Time: 5 ns
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TFBGA
Supplier Device Package: 54-TFBGA (8x8)

パッケージ: -

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DRAM

SDRAM

256Mbit

LVTTL

166 MHz

-

5 ns

3V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

54-TFBGA

54-TFBGA (8x8)

S25HL01GTFABHM030

Infineon Technologies

IC FLASH 1GBIT SPI/QUAD 24FBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 1Gbit
Memory Interface: SPI - Quad I/O, QPI
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Supplier Device Package: 24-FBGA (8x8)

パッケージ: -

Request a Quote

FLASH

FLASH - NOR (SLC)

1Gbit

SPI - Quad I/O, QPI

166 MHz

-

2.7V ~ 3.6V

-40°C ~ 125°C (TA)

Surface Mount

24-VBGA

24-FBGA (8x8)

BY25Q16BSSJG-T

BYTe Semiconductor

16 MBIT, 3.0V (2.7V TO 3.6V), -4

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 16Mbit
Memory Interface: SPI - Quad I/O, QPI
Clock Frequency: 108 MHz
Write Cycle Time - Word, Page: 60µs, 4ms
Access Time: 7 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SOP

パッケージ: -

Request a Quote

FLASH

FLASH - NOR (SLC)

16Mbit

SPI - Quad I/O, QPI

108 MHz

60µs, 4ms

7 ns

2.7V ~ 3.6V

-40°C ~ 105°C (TA)

Surface Mount

8-SOIC (0.209", 5.30mm Width)

8-SOP

FM93C46TLM8

Fairchild Semiconductor

IC EEPROM 1KBIT MICROWIRE 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kbit
Memory Interface: Microwire
Clock Frequency: 250 kHz
Write Cycle Time - Word, Page: 15ms
Access Time: -
Voltage - Supply: 2.7V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

パッケージ: -

Request a Quote

EEPROM

1Kbit

Microwire

250 kHz

15ms

-

2.7V ~ 5.5V

0°C ~ 70°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

7007L12J8

Renesas Electronics Corporation

IC RAM

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 256Kbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 12ns
Access Time: 12 ns
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 68-LCC (J-Lead)
Supplier Device Package: 68-PLCC (24.21x24.21)

パッケージ: -

Request a Quote

SRAM

SRAM - Dual Port, Asynchronous

256Kbit

Parallel

-

12ns

12 ns

4.5V ~ 5.5V

0°C ~ 70°C (TA)

Surface Mount

68-LCC (J-Lead)

68-PLCC (24.21x24.21)

MT53E768M32D4DE-046-IT-E-TR

Micron Technology Inc.

IC DRAM

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4X
Memory Size: 24Gbit
Memory Interface: Parallel
Clock Frequency: 2.133 GHz
Write Cycle Time - Word, Page: 18ns
Access Time: 3.5 ns
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
Supplier Device Package: 200-TFBGA (10x14.5)

パッケージ: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR4X

24Gbit

Parallel

2.133 GHz

18ns

3.5 ns

1.06V ~ 1.17V

-40°C ~ 95°C (TC)

Surface Mount

200-TFBGA

200-TFBGA (10x14.5)

CAT25020ZGI-26737

Catalyst Semiconductor Inc.

IC EEPROM 2KBIT SPI 10MHZ 8MSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kbit
Memory Interface: SPI
Clock Frequency: -
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: 8-MSOP

パッケージ: -

Request a Quote

EEPROM

2Kbit

SPI

-

5ms

-

2.5V ~ 5.5V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

8-MSOP