ページ 815 - メモリ | 集積回路（IC）

部品番号	メーカ	説明	パッケージ	在庫	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
W632GU6AB-15	Winbond Electronics	IC SDRAM 2GBIT 96WBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 2Gb (128M x 16) Memory Interface: Parallel Clock Frequency: 667MHz Write Cycle Time - Word, Page: - Access Time: 20ns Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫2,144	DRAM	SDRAM - DDR3	2Gb (128M x 16)	Parallel	667MHz	-	20ns	1.283 V ~ 1.45 V	0°C ~ 95°C (TC)	-	-	-
CY7C1062DV33-2XW11	Cypress Semiconductor Corp	IC SRAM 16GBIT 56TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 16Mb (512K x 32) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫6,960	SRAM	SRAM - Asynchronous	16Mb (512K x 32)	Parallel	-	-	-	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
IS49NLC36800-25EBLI	ISSI, Integrated Silicon Solution Inc	IC DRAM 288MBIT 400MHZ 144BGA Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Size: 288Mb (8M x 36) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: - Access Time: 15ns Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 144-TFBGA Supplier Device Package: 144-FCBGA (11x18.5)	パッケージ: 144-TFBGA	在庫5,664	DRAM	DRAM	288Mb (8M x 36)	Parallel	400MHz	-	15ns	1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	Surface Mount	144-TFBGA	144-FCBGA (11x18.5)
IS42RM16160E-6BLI-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 256MBIT 166MHZ 54BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile Memory Size: 256Mb (16M x 16) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: 5.5ns Voltage - Supply: 2.3 V ~ 3 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 54-TFBGA Supplier Device Package: 54-TFBGA (8x8)	パッケージ: 54-TFBGA	在庫4,304	DRAM	SDRAM - Mobile	256Mb (16M x 16)	Parallel	166MHz	-	5.5ns	2.3 V ~ 3 V	-40°C ~ 85°C (TA)	Surface Mount	54-TFBGA	54-TFBGA (8x8)
MTFC16GJTEC-4M IT	Micron Technology Inc.	IC FLASH 128GBIT 169WFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 128Gb (16G x 8) Memory Interface: MMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: - Supplier Device Package: -	パッケージ: -	在庫7,776	FLASH	FLASH - NAND	128Gb (16G x 8)	MMC	-	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	-	-
MT45W4MW16PCGA-70 IT	Micron Technology Inc.	IC PSRAM 64MBIT 70NS 48VFBGA Memory Type: Volatile Memory Format: PSRAM Technology: PSRAM (Pseudo SRAM) Memory Size: 64Mb (4M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 48-VFBGA Supplier Device Package: 48-VFBGA (6x8)	パッケージ: 48-VFBGA	在庫6,816	PSRAM	PSRAM (Pseudo SRAM)	64Mb (4M x 16)	Parallel	-	70ns	70ns	1.7 V ~ 1.95 V	-40°C ~ 85°C (TC)	Surface Mount	48-VFBGA	48-VFBGA (6x8)
CY7C1515KV18-333BZI	Cypress Semiconductor Corp	IC SRAM 72MBIT 333MHZ 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, QDR II Memory Size: 72Mb (2M x 36) Memory Interface: Parallel Clock Frequency: 333MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FBGA (13x15)	パッケージ: 165-LBGA	在庫3,936	SRAM	SRAM - Synchronous, QDR II	72Mb (2M x 36)	Parallel	333MHz	-	-	1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	Surface Mount	165-LBGA	165-FBGA (13x15)
IDT71V67602S133BQ8	IDT, Integrated Device Technology Inc	IC SRAM 9MBIT 133MHZ 165CABGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 9Mb (256K x 36) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 4.2ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-TBGA Supplier Device Package: 165-CABGA (13x15)	パッケージ: 165-TBGA	在庫7,776	SRAM	SRAM - Synchronous	9Mb (256K x 36)	Parallel	133MHz	-	4.2ns	3.135 V ~ 3.465 V	0°C ~ 70°C (TA)	Surface Mount	165-TBGA	165-CABGA (13x15)
MT46V64M8BN-6 IT:F TR	Micron Technology Inc.	IC SDRAM 512MBIT 167MHZ 60FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 512Mb (64M x 8) Memory Interface: Parallel Clock Frequency: 167MHz Write Cycle Time - Word, Page: 15ns Access Time: 700ps Voltage - Supply: 2.3 V ~ 2.7 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-FBGA (10x12.5)	パッケージ: 60-TFBGA	在庫7,840	DRAM	SDRAM - DDR	512Mb (64M x 8)	Parallel	167MHz	15ns	700ps	2.3 V ~ 2.7 V	-40°C ~ 85°C (TA)	Surface Mount	60-TFBGA	60-FBGA (10x12.5)
MT46V16M16P-6T IT:F TR	Micron Technology Inc.	IC SDRAM 256MBIT 167MHZ 66TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 256Mb (16M x 16) Memory Interface: Parallel Clock Frequency: 167MHz Write Cycle Time - Word, Page: 15ns Access Time: 700ps Voltage - Supply: 2.3 V ~ 2.7 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 66-TSSOP (0.400", 10.16mm Width) Supplier Device Package: 66-TSOP	パッケージ: 66-TSSOP (0.400", 10.16mm Width)	在庫2,512	DRAM	SDRAM - DDR	256Mb (16M x 16)	Parallel	167MHz	15ns	700ps	2.3 V ~ 2.7 V	-40°C ~ 85°C (TA)	Surface Mount	66-TSSOP (0.400", 10.16mm Width)	66-TSOP
M93C46-BN6	STMicroelectronics	IC EEPROM 1KBIT 2MHZ 8DIP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kb (128 x 8, 64 x 16) Memory Interface: SPI Clock Frequency: 2MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	パッケージ: 8-DIP (0.300", 7.62mm)	在庫190,200	EEPROM	EEPROM	1Kb (128 x 8, 64 x 16)	SPI	2MHz	5ms	-	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
AT25128-10UI-2.7	Microchip Technology	IC EEPROM 128KBIT 3MHZ 8DBGA Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 128Kb (16K x 8) Memory Interface: SPI Clock Frequency: 3MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 2.7 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-VFBGA Supplier Device Package: 8-dBGA (4.07x2.47)	パッケージ: 8-VFBGA	在庫17,712	EEPROM	EEPROM	128Kb (16K x 8)	SPI	3MHz	5ms	-	2.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-VFBGA	8-dBGA (4.07x2.47)
AT29LV256-20JI	Microchip Technology	IC FLASH 256KBIT 200NS 32PLCC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20ms Access Time: 200ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 32-LCC (J-Lead) Supplier Device Package: 32-PLCC	パッケージ: 32-LCC (J-Lead)	在庫6,012	FLASH	FLASH	256Kb (32K x 8)	Parallel	-	20ms	200ns	3 V ~ 3.6 V	-40°C ~ 85°C (TC)	Surface Mount	32-LCC (J-Lead)	32-PLCC
AT25128-10PC	Microchip Technology	IC EEPROM 128KBIT 3MHZ 8DIP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 128Kb (16K x 8) Memory Interface: SPI Clock Frequency: 3MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	パッケージ: 8-DIP (0.300", 7.62mm)	在庫6,960	EEPROM	EEPROM	128Kb (16K x 8)	SPI	3MHz	5ms	-	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
IS46TR16256A-125KBLA2-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 4GBIT 800MHZ 96BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 4Gb (256M x 16) Memory Interface: Parallel Clock Frequency: 800MHz Write Cycle Time - Word, Page: 15ns Access Time: 20ns Voltage - Supply: 1.425 V ~ 1.575 V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (9x13)	パッケージ: 96-TFBGA	在庫2,400	DRAM	SDRAM - DDR3	4Gb (256M x 16)	Parallel	800MHz	15ns	20ns	1.425 V ~ 1.575 V	-40°C ~ 105°C (TC)	Surface Mount	96-TFBGA	96-TWBGA (9x13)
IS42S32160F-6BLI-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 512MBIT 167MHZ 90BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 512Mb (16M x 32) Memory Interface: Parallel Clock Frequency: 167MHz Write Cycle Time - Word, Page: - Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 90-TFBGA Supplier Device Package: 90-TFBGA (8x13)	パッケージ: 90-TFBGA	在庫7,408	DRAM	SDRAM	512Mb (16M x 32)	Parallel	167MHz	-	5.4ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	90-TFBGA	90-TFBGA (8x13)
IS43TR16128BL-15HBL-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 2GBIT 667MHZ 96BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 2Gb (128M x 16) Memory Interface: Parallel Clock Frequency: 667MHz Write Cycle Time - Word, Page: 15ns Access Time: 20ns Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (9x13)	パッケージ: 96-TFBGA	在庫7,904	DRAM	SDRAM - DDR3L	2Gb (128M x 16)	Parallel	667MHz	15ns	20ns	1.283 V ~ 1.45 V	0°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-TWBGA (9x13)
AS7C34098A-15TCNTR	Alliance Memory, Inc.	IC SRAM 4MBIT 15NS 44TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 4Mb (256K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 15ns Access Time: 15ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP II	パッケージ: 44-TSOP (0.400", 10.16mm Width)	在庫7,072	SRAM	SRAM - Asynchronous	4Mb (256K x 16)	Parallel	-	15ns	15ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	44-TSOP (0.400", 10.16mm Width)	44-TSOP II
S25FL512SDSMFM013	Cypress Semiconductor Corp	IC NOR Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mb (64M x 8) Memory Interface: SPI - Quad I/O Clock Frequency: 80MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOIC	パッケージ: 16-SOIC (0.295", 7.50mm Width)	在庫7,760	FLASH	FLASH - NOR	512Mb (64M x 8)	SPI - Quad I/O	80MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 125°C (TA)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOIC
709079L9PFI8	IDT, Integrated Device Technology Inc	IC SRAM 256K PARALLEL 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 9ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	パッケージ: 100-LQFP	在庫6,432	SRAM	SRAM - Dual Port, Synchronous	256Kb (32K x 8)	Parallel	-	-	9ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
7025L25PFI8	IDT, Integrated Device Technology Inc	IC SRAM 128K PARALLEL 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 128Kb (8K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	パッケージ: 100-LQFP	在庫7,088	SRAM	SRAM - Dual Port, Asynchronous	128Kb (8K x 16)	Parallel	-	25ns	25ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
MT53E768M32D4DT-046 AAT:E	Micron Technology Inc.	IC DRAM LPDDR4 FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 24Gb (768M x 32) Memory Interface: - Clock Frequency: 2.133GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 0.6V, 1.1V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: - Supplier Device Package: -	パッケージ: -	在庫7,360	DRAM	SDRAM - Mobile LPDDR4	24Gb (768M x 32)	-	2.133GHz	-	-	0.6V, 1.1V	-40°C ~ 105°C (TC)	Surface Mount	-	-
24FC04HT-I/MS	Microchip Technology	4KB I2C EEPROM 1MHZ 1.7-5.5V 8-M Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 4Kb (256 x 8 x 2) Memory Interface: I²C Clock Frequency: 1MHz Write Cycle Time - Word, Page: 5ms Access Time: 450ns Voltage - Supply: 1.7V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: 8-MSOP	パッケージ: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	在庫4,656	EEPROM	EEPROM	4Kb (256 x 8 x 2)	I²C	1MHz	5ms	450ns	1.7V ~ 5.5V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	8-MSOP
SM671PBFLBFSS	Silicon Motion, Inc.	IC FLASH 960GBIT UFS3.1 153BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 960Gbit Memory Interface: UFS3.1 Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -40°C ~ 105°C Mounting Type: Surface Mount Package / Case: 153-TBGA Supplier Device Package: 153-BGA (11.5x13)	パッケージ: -	Request a Quote	FLASH	FLASH - NAND (SLC)	960Gbit	UFS3.1	-	-	-	-	-40°C ~ 105°C	Surface Mount	153-TBGA	153-BGA (11.5x13)
SM671PAC-AFST	Silicon Motion, Inc.	IC FLASH 512GBIT UFS3.1 153BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (TLC) Memory Size: 512Gbit Memory Interface: UFS3.1 Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 153-TFBGA Supplier Device Package: 153-BGA (11.5x13)	パッケージ: -	Request a Quote	FLASH	FLASH - NAND (TLC)	512Gbit	UFS3.1	-	-	-	-	-40°C ~ 85°C	Surface Mount	153-TFBGA	153-BGA (11.5x13)
N25Q032A13ESCA0F	Alliance Memory, Inc.	IC FLASH 32MBIT SPI 108MHZ 8SO Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 32Mbit Memory Interface: SPI Clock Frequency: 108 MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	パッケージ: -	在庫4,257	FLASH	FLASH - NOR	32Mbit	SPI	108 MHz	5ms	-	2.7V ~ 3.6V	-40°C ~ 125°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
70V06S20PFGI	Renesas Electronics Corporation	IC SRAM 128KBIT PARALLEL 64TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 128Kbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20ns Access Time: 20 ns Voltage - Supply: 3V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-LQFP Supplier Device Package: 64-TQFP (14x14)	パッケージ: -	Request a Quote	SRAM	SRAM - Dual Port, Asynchronous	128Kbit	Parallel	-	20ns	20 ns	3V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	64-LQFP	64-TQFP (14x14)
S25HL01GTDPMHM013	Infineon Technologies	Nor Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 1Gbit Memory Interface: SPI - Quad I/O, QPI Clock Frequency: 133 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOIC	パッケージ: -	Request a Quote	FLASH	FLASH - NOR (SLC)	1Gbit	SPI - Quad I/O, QPI	133 MHz	-	-	2.7V ~ 3.6V	-40°C ~ 125°C (TA)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOIC
MT62F3G32D8DV-023-FAAT-B	Micron Technology Inc.	LPDDR5 96G 3GX32 FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR5 Memory Size: 96Gbit Memory Interface: Parallel Clock Frequency: 4.266 GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -40°C ~ 105°C Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR5	96Gbit	Parallel	4.266 GHz	-	-	-	-40°C ~ 105°C	-	-	-
MT62F1536M64D8CZ-023-AAT-C-TR	Micron Technology Inc.	LPDDR5 96GBIT 64 561/570 TFBGA 8 Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-

W632GU6AB-15

Winbond Electronics

IC SDRAM 2GBIT 96WBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 2Gb (128M x 16)
Memory Interface: Parallel
Clock Frequency: 667MHz
Write Cycle Time - Word, Page: -
Access Time: 20ns
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫2,144

DRAM

SDRAM - DDR3

2Gb (128M x 16)

Parallel

667MHz

-

20ns

1.283 V ~ 1.45 V

0°C ~ 95°C (TC)

-

CY7C1062DV33-2XW11

Cypress Semiconductor Corp

IC SRAM 16GBIT 56TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Mb (512K x 32)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫6,960

SRAM

SRAM - Asynchronous

16Mb (512K x 32)

Parallel

-

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

-

IS49NLC36800-25EBLI

ISSI, Integrated Silicon Solution Inc

IC DRAM 288MBIT 400MHZ 144BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: DRAM
Memory Size: 288Mb (8M x 36)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: -
Access Time: 15ns
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 144-TFBGA
Supplier Device Package: 144-FCBGA (11x18.5)

パッケージ: 144-TFBGA

在庫5,664

DRAM

288Mb (8M x 36)

Parallel

400MHz

-

15ns

1.7 V ~ 1.9 V

-40°C ~ 85°C (TA)

Surface Mount

144-TFBGA

144-FCBGA (11x18.5)

IS42RM16160E-6BLI-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 166MHZ 54BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile
Memory Size: 256Mb (16M x 16)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: 5.5ns
Voltage - Supply: 2.3 V ~ 3 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TFBGA
Supplier Device Package: 54-TFBGA (8x8)

パッケージ: 54-TFBGA

在庫4,304

DRAM

SDRAM - Mobile

256Mb (16M x 16)

Parallel

166MHz

-

5.5ns

2.3 V ~ 3 V

-40°C ~ 85°C (TA)

Surface Mount

54-TFBGA

54-TFBGA (8x8)

MTFC16GJTEC-4M IT

Micron Technology Inc.

IC FLASH 128GBIT 169WFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 128Gb (16G x 8)
Memory Interface: MMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫7,776

FLASH

FLASH - NAND

128Gb (16G x 8)

MMC

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

-

MT45W4MW16PCGA-70 IT

Micron Technology Inc.

IC PSRAM 64MBIT 70NS 48VFBGA

Memory Type: Volatile
Memory Format: PSRAM
Technology: PSRAM (Pseudo SRAM)
Memory Size: 64Mb (4M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Supplier Device Package: 48-VFBGA (6x8)

パッケージ: 48-VFBGA

在庫6,816

PSRAM

PSRAM (Pseudo SRAM)

64Mb (4M x 16)

Parallel

-

70ns

1.7 V ~ 1.95 V

-40°C ~ 85°C (TC)

Surface Mount

48-VFBGA

48-VFBGA (6x8)

CY7C1515KV18-333BZI

Cypress Semiconductor Corp

IC SRAM 72MBIT 333MHZ 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QDR II
Memory Size: 72Mb (2M x 36)
Memory Interface: Parallel
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (13x15)

パッケージ: 165-LBGA

在庫3,936

SRAM

SRAM - Synchronous, QDR II

72Mb (2M x 36)

Parallel

333MHz

-

1.7 V ~ 1.9 V

-40°C ~ 85°C (TA)

Surface Mount

165-LBGA

165-FBGA (13x15)

IDT71V67602S133BQ8

IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 133MHZ 165CABGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 9Mb (256K x 36)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 4.2ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-CABGA (13x15)

パッケージ: 165-TBGA

在庫7,776

SRAM

SRAM - Synchronous

9Mb (256K x 36)

Parallel

133MHz

-

4.2ns

3.135 V ~ 3.465 V

0°C ~ 70°C (TA)

Surface Mount

165-TBGA

165-CABGA (13x15)

MT46V64M8BN-6 IT:F TR

Micron Technology Inc.

IC SDRAM 512MBIT 167MHZ 60FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 512Mb (64M x 8)
Memory Interface: Parallel
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 700ps
Voltage - Supply: 2.3 V ~ 2.7 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-FBGA (10x12.5)

パッケージ: 60-TFBGA

在庫7,840

DRAM

SDRAM - DDR

512Mb (64M x 8)

Parallel

167MHz

15ns

700ps

2.3 V ~ 2.7 V

-40°C ~ 85°C (TA)

Surface Mount

60-TFBGA

60-FBGA (10x12.5)

MT46V16M16P-6T IT:F TR

Micron Technology Inc.

IC SDRAM 256MBIT 167MHZ 66TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 256Mb (16M x 16)
Memory Interface: Parallel
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 700ps
Voltage - Supply: 2.3 V ~ 2.7 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Supplier Device Package: 66-TSOP

パッケージ: 66-TSSOP (0.400", 10.16mm Width)

在庫2,512

DRAM

SDRAM - DDR

256Mb (16M x 16)

Parallel

167MHz

15ns

700ps

2.3 V ~ 2.7 V

-40°C ~ 85°C (TA)

Surface Mount

66-TSSOP (0.400", 10.16mm Width)

66-TSOP

M93C46-BN6

STMicroelectronics

IC EEPROM 1KBIT 2MHZ 8DIP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kb (128 x 8, 64 x 16)
Memory Interface: SPI
Clock Frequency: 2MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

パッケージ: 8-DIP (0.300", 7.62mm)

在庫190,200

EEPROM

1Kb (128 x 8, 64 x 16)

SPI

2MHz

5ms

-

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

AT25128-10UI-2.7

Microchip Technology

IC EEPROM 128KBIT 3MHZ 8DBGA

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 128Kb (16K x 8)
Memory Interface: SPI
Clock Frequency: 3MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 2.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-VFBGA
Supplier Device Package: 8-dBGA (4.07x2.47)

パッケージ: 8-VFBGA

在庫17,712

EEPROM

128Kb (16K x 8)

SPI

3MHz

5ms

-

2.7 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-VFBGA

8-dBGA (4.07x2.47)

AT29LV256-20JI

Microchip Technology

IC FLASH 256KBIT 200NS 32PLCC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20ms
Access Time: 200ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-LCC (J-Lead)
Supplier Device Package: 32-PLCC

パッケージ: 32-LCC (J-Lead)

在庫6,012

FLASH

256Kb (32K x 8)

Parallel

-

20ms

200ns

3 V ~ 3.6 V

-40°C ~ 85°C (TC)

Surface Mount

32-LCC (J-Lead)

32-PLCC

AT25128-10PC

Microchip Technology

IC EEPROM 128KBIT 3MHZ 8DIP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 128Kb (16K x 8)
Memory Interface: SPI
Clock Frequency: 3MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

パッケージ: 8-DIP (0.300", 7.62mm)

在庫6,960

EEPROM

128Kb (16K x 8)

SPI

3MHz

5ms

-

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

IS46TR16256A-125KBLA2-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 4GBIT 800MHZ 96BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 4Gb (256M x 16)
Memory Interface: Parallel
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Voltage - Supply: 1.425 V ~ 1.575 V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)

パッケージ: 96-TFBGA

在庫2,400

DRAM

SDRAM - DDR3

4Gb (256M x 16)

Parallel

800MHz

15ns

20ns

1.425 V ~ 1.575 V

-40°C ~ 105°C (TC)

Surface Mount

96-TFBGA

96-TWBGA (9x13)

IS42S32160F-6BLI-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 167MHZ 90BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 512Mb (16M x 32)
Memory Interface: Parallel
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
Supplier Device Package: 90-TFBGA (8x13)

パッケージ: 90-TFBGA

在庫7,408

DRAM

SDRAM

512Mb (16M x 32)

Parallel

167MHz

-

5.4ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

90-TFBGA

90-TFBGA (8x13)

IS43TR16128BL-15HBL-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 2GBIT 667MHZ 96BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 2Gb (128M x 16)
Memory Interface: Parallel
Clock Frequency: 667MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)

パッケージ: 96-TFBGA

在庫7,904

DRAM

SDRAM - DDR3L

2Gb (128M x 16)

Parallel

667MHz

15ns

20ns

1.283 V ~ 1.45 V

0°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-TWBGA (9x13)

AS7C34098A-15TCNTR

Alliance Memory, Inc.

IC SRAM 4MBIT 15NS 44TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (256K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 15ns
Access Time: 15ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II

パッケージ: 44-TSOP (0.400", 10.16mm Width)

在庫7,072

SRAM

SRAM - Asynchronous

4Mb (256K x 16)

Parallel

-

15ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

44-TSOP (0.400", 10.16mm Width)

44-TSOP II

S25FL512SDSMFM013

Cypress Semiconductor Corp

IC NOR

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mb (64M x 8)
Memory Interface: SPI - Quad I/O
Clock Frequency: 80MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOIC

パッケージ: 16-SOIC (0.295", 7.50mm Width)

在庫7,760

FLASH

FLASH - NOR

512Mb (64M x 8)

SPI - Quad I/O

80MHz

-

2.7 V ~ 3.6 V

-40°C ~ 125°C (TA)

Surface Mount

16-SOIC (0.295", 7.50mm Width)

16-SOIC

709079L9PFI8

IDT, Integrated Device Technology Inc

IC SRAM 256K PARALLEL 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 9ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

パッケージ: 100-LQFP

在庫6,432

SRAM

SRAM - Dual Port, Synchronous

256Kb (32K x 8)

Parallel

-

9ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

7025L25PFI8

IDT, Integrated Device Technology Inc

IC SRAM 128K PARALLEL 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 128Kb (8K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

パッケージ: 100-LQFP

在庫7,088

SRAM

SRAM - Dual Port, Asynchronous

128Kb (8K x 16)

Parallel

-

25ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

MT53E768M32D4DT-046 AAT:E

Micron Technology Inc.

IC DRAM LPDDR4 FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 24Gb (768M x 32)
Memory Interface: -
Clock Frequency: 2.133GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 0.6V, 1.1V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫7,360

DRAM

SDRAM - Mobile LPDDR4

24Gb (768M x 32)

-

2.133GHz

-

0.6V, 1.1V

-40°C ~ 105°C (TC)

Surface Mount

-

24FC04HT-I/MS

Microchip Technology

4KB I2C EEPROM 1MHZ 1.7-5.5V 8-M

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 4Kb (256 x 8 x 2)
Memory Interface: I²C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 450ns
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: 8-MSOP

パッケージ: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

在庫4,656

EEPROM

4Kb (256 x 8 x 2)

I²C

1MHz

5ms

450ns

1.7V ~ 5.5V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

8-MSOP

SM671PBFLBFSS

Silicon Motion, Inc.

IC FLASH 960GBIT UFS3.1 153BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 960Gbit
Memory Interface: UFS3.1
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 153-TBGA
Supplier Device Package: 153-BGA (11.5x13)

パッケージ: -

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FLASH

FLASH - NAND (SLC)

960Gbit

UFS3.1

-

-40°C ~ 105°C

Surface Mount

153-TBGA

153-BGA (11.5x13)

SM671PAC-AFST

Silicon Motion, Inc.

IC FLASH 512GBIT UFS3.1 153BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (TLC)
Memory Size: 512Gbit
Memory Interface: UFS3.1
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 153-TFBGA
Supplier Device Package: 153-BGA (11.5x13)

パッケージ: -

Request a Quote

FLASH

FLASH - NAND (TLC)

512Gbit

UFS3.1

-

-40°C ~ 85°C

Surface Mount

153-TFBGA

153-BGA (11.5x13)

N25Q032A13ESCA0F

Alliance Memory, Inc.

IC FLASH 32MBIT SPI 108MHZ 8SO

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 32Mbit
Memory Interface: SPI
Clock Frequency: 108 MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

パッケージ: -

在庫4,257

FLASH

FLASH - NOR

32Mbit

SPI

108 MHz

5ms

-

2.7V ~ 3.6V

-40°C ~ 125°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

70V06S20PFGI

Renesas Electronics Corporation

IC SRAM 128KBIT PARALLEL 64TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 128Kbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20ns
Access Time: 20 ns
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Supplier Device Package: 64-TQFP (14x14)

パッケージ: -

Request a Quote

SRAM

SRAM - Dual Port, Asynchronous

128Kbit

Parallel

-

20ns

20 ns

3V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

64-LQFP

64-TQFP (14x14)

S25HL01GTDPMHM013

Infineon Technologies

Nor

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 1Gbit
Memory Interface: SPI - Quad I/O, QPI
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOIC

パッケージ: -

Request a Quote

FLASH

FLASH - NOR (SLC)

1Gbit

SPI - Quad I/O, QPI

133 MHz

-

2.7V ~ 3.6V

-40°C ~ 125°C (TA)

Surface Mount

16-SOIC (0.295", 7.50mm Width)

16-SOIC

MT62F3G32D8DV-023-FAAT-B

Micron Technology Inc.

LPDDR5 96G 3GX32 FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR5
Memory Size: 96Gbit
Memory Interface: Parallel
Clock Frequency: 4.266 GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -40°C ~ 105°C
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR5

96Gbit

Parallel

4.266 GHz

-

-40°C ~ 105°C

-

MT62F1536M64D8CZ-023-AAT-C-TR

Micron Technology Inc.

LPDDR5 96GBIT 64 561/570 TFBGA 8

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

Request a Quote

-