ページ 891 - メモリ | 集積回路（IC）

部品番号	メーカ	説明	パッケージ	在庫	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
RC28F128M29EWHF	Micron Technology Inc.	IC FLASH 128MBIT 60NS 64FBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (16M x 8, 8M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 60ns Access Time: 60ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-LBGA Supplier Device Package: 64-FBGA (11x13)	パッケージ: 64-LBGA	在庫2,800	FLASH	FLASH - NOR	128Mb (16M x 8, 8M x 16)	Parallel	-	60ns	60ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	64-LBGA	64-FBGA (11x13)
CY7C1314CV18-200BZI	Cypress Semiconductor Corp	IC SRAM 18MBIT 200MHZ 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, QDR II Memory Size: 18Mb (512K x 36) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FBGA (13x15)	パッケージ: 165-LBGA	在庫6,432	SRAM	SRAM - Synchronous, QDR II	18Mb (512K x 36)	Parallel	200MHz	-	-	1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	Surface Mount	165-LBGA	165-FBGA (13x15)
IDT71V124SA10YGI8	IDT, Integrated Device Technology Inc	IC SRAM 1MBIT 10NS 32SOJ Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 1Mb (128K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10ns Voltage - Supply: 3.15 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 32-BSOJ (0.400", 10.16mm Width) Supplier Device Package: 32-SOJ	パッケージ: 32-BSOJ (0.400", 10.16mm Width)	在庫3,040	SRAM	SRAM - Asynchronous	1Mb (128K x 8)	Parallel	-	10ns	10ns	3.15 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	32-BSOJ (0.400", 10.16mm Width)	32-SOJ
M29W640GL70NA6E	Micron Technology Inc.	IC FLASH 64MBIT 70NS 48TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (8M x 8, 4M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP	パッケージ: 48-TFSOP (0.724", 18.40mm Width)	在庫14,808	FLASH	FLASH - NOR	64Mb (8M x 8, 4M x 16)	Parallel	-	70ns	70ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP
DS1220Y-100IND+	Maxim Integrated	IC NVSRAM 16KBIT 100NS 24EDIP Memory Type: Non-Volatile Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Memory Size: 16Kb (2K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 100ns Access Time: 100ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 24-DIP Module (0.600", 15.24mm) Supplier Device Package: 24-EDIP	パッケージ: 24-DIP Module (0.600", 15.24mm)	在庫16,668	NVSRAM	NVSRAM (Non-Volatile SRAM)	16Kb (2K x 8)	Parallel	-	100ns	100ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Through Hole	24-DIP Module (0.600", 15.24mm)	24-EDIP
MT48LC16M16A2P-75:D TR	Micron Technology Inc.	IC SDRAM 256MBIT 133MHZ 54TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 256Mb (16M x 16) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: 15ns Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Supplier Device Package: 54-TSOP II	パッケージ: 54-TSOP (0.400", 10.16mm Width)	在庫11,028	DRAM	SDRAM	256Mb (16M x 16)	Parallel	133MHz	15ns	5.4ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	54-TSOP (0.400", 10.16mm Width)	54-TSOP II
AT27C516-55JI	Microchip Technology	IC OTP 512KBIT 55NS 44PLCC Memory Type: Non-Volatile Memory Format: EPROM Technology: EPROM - OTP Memory Size: 512Kb (32K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 55ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 44-LCC (J-Lead) Supplier Device Package: 44-PLCC (16.59x16.59)	パッケージ: 44-LCC (J-Lead)	在庫3,296	EPROM	EPROM - OTP	512Kb (32K x 16)	Parallel	-	-	55ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TC)	Surface Mount	44-LCC (J-Lead)	44-PLCC (16.59x16.59)
AT27BV1024-90VC	Microchip Technology	IC OTP 1MBIT 90NS 40VSOP Memory Type: Non-Volatile Memory Format: EPROM Technology: EPROM - OTP Memory Size: 1Mb (64K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 90ns Voltage - Supply: 2.7 V ~ 3.6 V, 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TC) Mounting Type: Surface Mount Package / Case: 40-TFSOP (0.488", 12.40mm Width) Supplier Device Package: 40-VSOP	パッケージ: 40-TFSOP (0.488", 12.40mm Width)	在庫6,448	EPROM	EPROM - OTP	1Mb (64K x 16)	Parallel	-	-	90ns	2.7 V ~ 3.6 V, 4.5 V ~ 5.5 V	0°C ~ 70°C (TC)	Surface Mount	40-TFSOP (0.488", 12.40mm Width)	40-VSOP
AT24C08AN-10SC-1.8	Microchip Technology	IC EEPROM 8KBIT 400KHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 8Kb (1K x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 4.5µs Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫3,440	EEPROM	EEPROM	8Kb (1K x 8)	I2C	400kHz	5ms	4.5µs	1.8 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
AT25128N-10SI	Microchip Technology	IC EEPROM 128KBIT 3MHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 128Kb (16K x 8) Memory Interface: SPI Clock Frequency: 3MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫4,096	EEPROM	EEPROM	128Kb (16K x 8)	SPI	3MHz	5ms	-	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IS61WV102416ALL-20TLI	ISSI, Integrated Silicon Solution Inc	IC SRAM 16MBIT 20NS 48TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 16Mb (1M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20ns Access Time: 20ns Voltage - Supply: 1.65 V ~ 2.2 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.488", 12.40mm Width) Supplier Device Package: 48-TSOP	パッケージ: 48-TFSOP (0.488", 12.40mm Width)	在庫6,048	SRAM	SRAM - Asynchronous	16Mb (1M x 16)	Parallel	-	20ns	20ns	1.65 V ~ 2.2 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFSOP (0.488", 12.40mm Width)	48-TSOP
IS42S32160F-7TLI-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 512MBIT 143MHZ 86TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 512Mb (16M x 32) Memory Interface: Parallel Clock Frequency: 143MHz Write Cycle Time - Word, Page: - Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 86-TFSOP (0.400", 10.16mm Width) Supplier Device Package: 86-TSOP II	パッケージ: 86-TFSOP (0.400", 10.16mm Width)	在庫2,864	DRAM	SDRAM	512Mb (16M x 32)	Parallel	143MHz	-	5.4ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	86-TFSOP (0.400", 10.16mm Width)	86-TSOP II
IS46DR16320C-25DBLA1-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 512MBIT 400MHZ 84BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 512Mb (32M x 16) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: 15ns Access Time: 400ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 84-TFBGA Supplier Device Package: 84-TWBGA (8x12.5)	パッケージ: 84-TFBGA	在庫4,352	DRAM	SDRAM - DDR2	512Mb (32M x 16)	Parallel	400MHz	15ns	400ps	1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	Surface Mount	84-TFBGA	84-TWBGA (8x12.5)
S25FL256SDPBHBC03	Cypress Semiconductor Corp	IC FLASH 256MBIT 66MHZ 24BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mb (32M x 8) Memory Interface: SPI - Quad I/O Clock Frequency: 66MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-BGA (6x8)	パッケージ: 24-TBGA	在庫2,240	FLASH	FLASH - NOR	256Mb (32M x 8)	SPI - Quad I/O	66MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 105°C (TA)	Surface Mount	24-TBGA	24-BGA (6x8)
FT24C04A-UTR-T	Fremont Micro Devices USA	IC EEPROM 4KBIT 1MHZ 8TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 4Kb (512 x 8) Memory Interface: I2C Clock Frequency: 1MHz Write Cycle Time - Word, Page: 5ms Access Time: 550ns Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	パッケージ: 8-TSSOP (0.173", 4.40mm Width)	在庫3,216	EEPROM	EEPROM	4Kb (512 x 8)	I2C	1MHz	5ms	550ns	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
S-25C160A0I-K8T3U3	SII Semiconductor Corporation	IC EEPROM 16KBIT 5MHZ 8MSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 16Kb (2K x 8) Memory Interface: SPI Clock Frequency: 5MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.6 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-WSSOP, 8-MSOP (0.110", 2.80mm Width) Supplier Device Package: 8-TMSOP	パッケージ: 8-WSSOP, 8-MSOP (0.110", 2.80mm Width)	在庫5,856	EEPROM	EEPROM	16Kb (2K x 8)	SPI	5MHz	5ms	-	1.6 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-WSSOP, 8-MSOP (0.110", 2.80mm Width)	8-TMSOP
S25FL032P0XMFI011	Cypress Semiconductor Corp	IC FLASH 32MBIT 104MHZ 8SO Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 32Mb (4M x 8) Memory Interface: SPI Clock Frequency: 104MHz Write Cycle Time - Word, Page: 5µs, 3ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Supplier Device Package: 8-SO	パッケージ: 8-SOIC (0.209", 5.30mm Width)	在庫7,040	FLASH	FLASH - NOR	32Mb (4M x 8)	SPI	104MHz	5µs, 3ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.209", 5.30mm Width)	8-SO
S34ML01G200BHI900	Cypress Semiconductor Corp	IC FLASH 1GBIT 25NS 63BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 1Gb (128M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 63-VFBGA Supplier Device Package: 63-BGA (11x9)	パッケージ: 63-VFBGA	在庫5,280	FLASH	FLASH - NAND	1Gb (128M x 8)	Parallel	-	25ns	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	63-VFBGA	63-BGA (11x9)
24FC256-I/MS	Microchip Technology	IC EEPROM 256KBIT 1MHZ 8MSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 256Kb (32K x 8) Memory Interface: I2C Clock Frequency: 1MHz Write Cycle Time - Word, Page: 5ms Access Time: 400ns Voltage - Supply: 1.7 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: 8-MSOP	パッケージ: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	在庫16,296	EEPROM	EEPROM	256Kb (32K x 8)	I2C	1MHz	5ms	400ns	1.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	8-MSOP
S25FL128P0XMFI001	Cypress Semiconductor Corp	IC FLASH 128MBIT 104MHZ 16SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (16M x 8) Memory Interface: SPI Clock Frequency: 104MHz Write Cycle Time - Word, Page: 3ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOIC	パッケージ: 16-SOIC (0.295", 7.50mm Width)	在庫62,580	FLASH	FLASH - NOR	128Mb (16M x 8)	SPI	104MHz	3ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOIC
S99-50341	Cypress Semiconductor Corp	IC GATE NOR Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫4,768	-	-	-	-	-	-	-	-	-	-	-	-
MT40A512M16LY-062E IT:E TR	Micron Technology Inc.	IC DRAM 8G PARALLEL 1.6GHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 8Gb (512M x 16) Memory Interface: Parallel Clock Frequency: 1.6GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.26 V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫2,512	DRAM	SDRAM - DDR4	8Gb (512M x 16)	Parallel	1.6GHz	-	-	1.14 V ~ 1.26 V	-40°C ~ 95°C (TC)	-	-	-
AS25F316MQ-10S1IN	Alliance Memory, Inc.	NOR FLASH, 4G, 3.3V INDUSTRIAL T Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 16Mbit Memory Interface: SPI - Quad I/O Clock Frequency: 104 MHz Write Cycle Time - Word, Page: 75µs, 2ms Access Time: 7 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	パッケージ: -	Request a Quote	FLASH	FLASH - NOR (SLC)	16Mbit	SPI - Quad I/O	104 MHz	75µs, 2ms	7 ns	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
IM4G16L4JCBG-046	Intelligent Memory Ltd.	LPDDR4X 8GB 256MX16 2133MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4X Memory Size: 4Gbit Memory Interface: Parallel Clock Frequency: 2.133 GHz Write Cycle Time - Word, Page: 18ns Access Time: - Voltage - Supply: 1.17V ~ 1.06V, 1.95V ~ 1.7V Operating Temperature: -25°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 200-VFBGA Supplier Device Package: 200-FBGA (10x15)	パッケージ: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR4X	4Gbit	Parallel	2.133 GHz	18ns	-	1.17V ~ 1.06V, 1.95V ~ 1.7V	-25°C ~ 85°C (TC)	Surface Mount	200-VFBGA	200-FBGA (10x15)
AS6C1616C-45TINTR	Alliance Memory, Inc.	LP-ASYNCH SRAM - C DIE Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Single Port, Asynchronous Memory Size: 16Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 45ns Access Time: 45 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	パッケージ: -	Request a Quote	SRAM	SRAM - Single Port, Asynchronous	16Mbit	Parallel	-	45ns	45 ns	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP I
IS25LP01G-RILE	ISSI, Integrated Silicon Solution Inc	1Gb QPI/QSPI, 24-ball LFBGA 6x8m Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 1Gbit Memory Interface: SPI - Quad I/O, QPI, DTR Clock Frequency: 133 MHz Write Cycle Time - Word, Page: 50µs, 1ms Access Time: 8 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 24-LBGA Supplier Device Package: 24-LFBGA (6x8)	パッケージ: -	Request a Quote	FLASH	FLASH - NOR (SLC)	1Gbit	SPI - Quad I/O, QPI, DTR	133 MHz	50µs, 1ms	8 ns	2.7V ~ 3.6V	-40°C ~ 105°C (TA)	Surface Mount	24-LBGA	24-LFBGA (6x8)
NM24C09LM8	Fairchild Semiconductor	IC EEPROM 8KBIT I2C 100KHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 8Kbit Memory Interface: I2C Clock Frequency: 100 kHz Write Cycle Time - Word, Page: 15ms Access Time: 3.5 µs Voltage - Supply: 2.7V ~ 4.5V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	パッケージ: -	Request a Quote	EEPROM	EEPROM	8Kbit	I2C	100 kHz	15ms	3.5 µs	2.7V ~ 4.5V	0°C ~ 70°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
MT29F2T08EMLEEJ4-QC-E-TR	Micron Technology Inc.	TLC 2T 256GX8 VBGA QDP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MT29F1T08EELCEJ4-QJ-C	Micron Technology Inc.	TLC 1T 128GX8 VBGA DDP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
LC35256FT70UHSTLM-E	onsemi	256K STATIC RAMS Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-

RC28F128M29EWHF

Micron Technology Inc.

IC FLASH 128MBIT 60NS 64FBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (16M x 8, 8M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 60ns
Access Time: 60ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-FBGA (11x13)

パッケージ: 64-LBGA

在庫2,800

FLASH

FLASH - NOR

128Mb (16M x 8, 8M x 16)

Parallel

-

60ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

64-LBGA

64-FBGA (11x13)

CY7C1314CV18-200BZI

Cypress Semiconductor Corp

IC SRAM 18MBIT 200MHZ 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QDR II
Memory Size: 18Mb (512K x 36)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (13x15)

パッケージ: 165-LBGA

在庫6,432

SRAM

SRAM - Synchronous, QDR II

18Mb (512K x 36)

Parallel

200MHz

-

1.7 V ~ 1.9 V

-40°C ~ 85°C (TA)

Surface Mount

165-LBGA

165-FBGA (13x15)

IDT71V124SA10YGI8

IDT, Integrated Device Technology Inc

IC SRAM 1MBIT 10NS 32SOJ

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (128K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Voltage - Supply: 3.15 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-BSOJ (0.400", 10.16mm Width)
Supplier Device Package: 32-SOJ

パッケージ: 32-BSOJ (0.400", 10.16mm Width)

在庫3,040

SRAM

SRAM - Asynchronous

1Mb (128K x 8)

Parallel

-

10ns

3.15 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

32-BSOJ (0.400", 10.16mm Width)

32-SOJ

M29W640GL70NA6E

Micron Technology Inc.

IC FLASH 64MBIT 70NS 48TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (8M x 8, 4M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP

パッケージ: 48-TFSOP (0.724", 18.40mm Width)

在庫14,808

FLASH

FLASH - NOR

64Mb (8M x 8, 4M x 16)

Parallel

-

70ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP

DS1220Y-100IND+

Maxim Integrated

IC NVSRAM 16KBIT 100NS 24EDIP

Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 16Kb (2K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 100ns
Access Time: 100ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 24-DIP Module (0.600", 15.24mm)
Supplier Device Package: 24-EDIP

パッケージ: 24-DIP Module (0.600", 15.24mm)

在庫16,668

NVSRAM

NVSRAM (Non-Volatile SRAM)

16Kb (2K x 8)

Parallel

-

100ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Through Hole

24-DIP Module (0.600", 15.24mm)

24-EDIP

MT48LC16M16A2P-75:D TR

Micron Technology Inc.

IC SDRAM 256MBIT 133MHZ 54TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 256Mb (16M x 16)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II

パッケージ: 54-TSOP (0.400", 10.16mm Width)

在庫11,028

DRAM

SDRAM

256Mb (16M x 16)

Parallel

133MHz

15ns

5.4ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

54-TSOP (0.400", 10.16mm Width)

54-TSOP II

AT27C516-55JI

Microchip Technology

IC OTP 512KBIT 55NS 44PLCC

Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - OTP
Memory Size: 512Kb (32K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 55ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 44-LCC (J-Lead)
Supplier Device Package: 44-PLCC (16.59x16.59)

パッケージ: 44-LCC (J-Lead)

在庫3,296

EPROM

EPROM - OTP

512Kb (32K x 16)

Parallel

-

55ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TC)

Surface Mount

44-LCC (J-Lead)

44-PLCC (16.59x16.59)

AT27BV1024-90VC

Microchip Technology

IC OTP 1MBIT 90NS 40VSOP

Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - OTP
Memory Size: 1Mb (64K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 90ns
Voltage - Supply: 2.7 V ~ 3.6 V, 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Surface Mount
Package / Case: 40-TFSOP (0.488", 12.40mm Width)
Supplier Device Package: 40-VSOP

パッケージ: 40-TFSOP (0.488", 12.40mm Width)

在庫6,448

EPROM

EPROM - OTP

1Mb (64K x 16)

Parallel

-

90ns

2.7 V ~ 3.6 V, 4.5 V ~ 5.5 V

0°C ~ 70°C (TC)

Surface Mount

40-TFSOP (0.488", 12.40mm Width)

40-VSOP

AT24C08AN-10SC-1.8

Microchip Technology

IC EEPROM 8KBIT 400KHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 8Kb (1K x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 4.5µs
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫3,440

EEPROM

8Kb (1K x 8)

I2C

400kHz

5ms

4.5µs

1.8 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

AT25128N-10SI

Microchip Technology

IC EEPROM 128KBIT 3MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 128Kb (16K x 8)
Memory Interface: SPI
Clock Frequency: 3MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫4,096

EEPROM

128Kb (16K x 8)

SPI

3MHz

5ms

-

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

IS61WV102416ALL-20TLI

ISSI, Integrated Silicon Solution Inc

IC SRAM 16MBIT 20NS 48TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Mb (1M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Voltage - Supply: 1.65 V ~ 2.2 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.488", 12.40mm Width)
Supplier Device Package: 48-TSOP

パッケージ: 48-TFSOP (0.488", 12.40mm Width)

在庫6,048

SRAM

SRAM - Asynchronous

16Mb (1M x 16)

Parallel

-

20ns

1.65 V ~ 2.2 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFSOP (0.488", 12.40mm Width)

48-TSOP

IS42S32160F-7TLI-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 143MHZ 86TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 512Mb (16M x 32)
Memory Interface: Parallel
Clock Frequency: 143MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 86-TFSOP (0.400", 10.16mm Width)
Supplier Device Package: 86-TSOP II

パッケージ: 86-TFSOP (0.400", 10.16mm Width)

在庫2,864

DRAM

SDRAM

512Mb (16M x 32)

Parallel

143MHz

-

5.4ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

86-TFSOP (0.400", 10.16mm Width)

86-TSOP II

IS46DR16320C-25DBLA1-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 400MHZ 84BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 512Mb (32M x 16)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 400ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 84-TFBGA
Supplier Device Package: 84-TWBGA (8x12.5)

パッケージ: 84-TFBGA

在庫4,352

DRAM

SDRAM - DDR2

512Mb (32M x 16)

Parallel

400MHz

15ns

400ps

1.7 V ~ 1.9 V

-40°C ~ 85°C (TA)

Surface Mount

84-TFBGA

84-TWBGA (8x12.5)

S25FL256SDPBHBC03

Cypress Semiconductor Corp

IC FLASH 256MBIT 66MHZ 24BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mb (32M x 8)
Memory Interface: SPI - Quad I/O
Clock Frequency: 66MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-BGA (6x8)

パッケージ: 24-TBGA

在庫2,240

FLASH

FLASH - NOR

256Mb (32M x 8)

SPI - Quad I/O

66MHz

-

2.7 V ~ 3.6 V

-40°C ~ 105°C (TA)

Surface Mount

24-TBGA

24-BGA (6x8)

FT24C04A-UTR-T

Fremont Micro Devices USA

IC EEPROM 4KBIT 1MHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 4Kb (512 x 8)
Memory Interface: I2C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 550ns
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

パッケージ: 8-TSSOP (0.173", 4.40mm Width)

在庫3,216

EEPROM

4Kb (512 x 8)

I2C

1MHz

5ms

550ns

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

S-25C160A0I-K8T3U3

SII Semiconductor Corporation

IC EEPROM 16KBIT 5MHZ 8MSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kb (2K x 8)
Memory Interface: SPI
Clock Frequency: 5MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.6 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WSSOP, 8-MSOP (0.110", 2.80mm Width)
Supplier Device Package: 8-TMSOP

パッケージ: 8-WSSOP, 8-MSOP (0.110", 2.80mm Width)

在庫5,856

EEPROM

16Kb (2K x 8)

SPI

5MHz

5ms

-

1.6 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-WSSOP, 8-MSOP (0.110", 2.80mm Width)

8-TMSOP

S25FL032P0XMFI011

Cypress Semiconductor Corp

IC FLASH 32MBIT 104MHZ 8SO

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 32Mb (4M x 8)
Memory Interface: SPI
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 5µs, 3ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SO

パッケージ: 8-SOIC (0.209", 5.30mm Width)

在庫7,040

FLASH

FLASH - NOR

32Mb (4M x 8)

SPI

104MHz

5µs, 3ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.209", 5.30mm Width)

8-SO

S34ML01G200BHI900

Cypress Semiconductor Corp

IC FLASH 1GBIT 25NS 63BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 1Gb (128M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Supplier Device Package: 63-BGA (11x9)

パッケージ: 63-VFBGA

在庫5,280

FLASH

FLASH - NAND

1Gb (128M x 8)

Parallel

-

25ns

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

63-VFBGA

63-BGA (11x9)

24FC256-I/MS

Microchip Technology

IC EEPROM 256KBIT 1MHZ 8MSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 256Kb (32K x 8)
Memory Interface: I2C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 400ns
Voltage - Supply: 1.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: 8-MSOP

パッケージ: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

在庫16,296

EEPROM

256Kb (32K x 8)

I2C

1MHz

5ms

400ns

1.7 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

8-MSOP

S25FL128P0XMFI001

Cypress Semiconductor Corp

IC FLASH 128MBIT 104MHZ 16SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (16M x 8)
Memory Interface: SPI
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 3ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOIC

パッケージ: 16-SOIC (0.295", 7.50mm Width)

在庫62,580

FLASH

FLASH - NOR

128Mb (16M x 8)

SPI

104MHz

3ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

16-SOIC (0.295", 7.50mm Width)

16-SOIC

S99-50341

Cypress Semiconductor Corp

IC GATE NOR

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫4,768

-

MT40A512M16LY-062E IT:E TR

Micron Technology Inc.

IC DRAM 8G PARALLEL 1.6GHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 8Gb (512M x 16)
Memory Interface: Parallel
Clock Frequency: 1.6GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.26 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫2,512

DRAM

SDRAM - DDR4

8Gb (512M x 16)

Parallel

1.6GHz

-

1.14 V ~ 1.26 V

-40°C ~ 95°C (TC)

-

AS25F316MQ-10S1IN

Alliance Memory, Inc.

NOR FLASH, 4G, 3.3V INDUSTRIAL T

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 16Mbit
Memory Interface: SPI - Quad I/O
Clock Frequency: 104 MHz
Write Cycle Time - Word, Page: 75µs, 2ms
Access Time: 7 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

パッケージ: -

Request a Quote

FLASH

FLASH - NOR (SLC)

16Mbit

SPI - Quad I/O

104 MHz

75µs, 2ms

7 ns

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

IM4G16L4JCBG-046

Intelligent Memory Ltd.

LPDDR4X 8GB 256MX16 2133MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4X
Memory Size: 4Gbit
Memory Interface: Parallel
Clock Frequency: 2.133 GHz
Write Cycle Time - Word, Page: 18ns
Access Time: -
Voltage - Supply: 1.17V ~ 1.06V, 1.95V ~ 1.7V
Operating Temperature: -25°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 200-VFBGA
Supplier Device Package: 200-FBGA (10x15)

パッケージ: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR4X

4Gbit

Parallel

2.133 GHz

18ns

-

1.17V ~ 1.06V, 1.95V ~ 1.7V

-25°C ~ 85°C (TC)

Surface Mount

200-VFBGA

200-FBGA (10x15)

AS6C1616C-45TINTR

Alliance Memory, Inc.

LP-ASYNCH SRAM - C DIE

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Single Port, Asynchronous
Memory Size: 16Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 45ns
Access Time: 45 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I

パッケージ: -

Request a Quote

SRAM

SRAM - Single Port, Asynchronous

16Mbit

Parallel

-

45ns

45 ns

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP I

IS25LP01G-RILE

ISSI, Integrated Silicon Solution Inc

1Gb QPI/QSPI, 24-ball LFBGA 6x8m

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 1Gbit
Memory Interface: SPI - Quad I/O, QPI, DTR
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: 50µs, 1ms
Access Time: 8 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-LBGA
Supplier Device Package: 24-LFBGA (6x8)

パッケージ: -

Request a Quote

FLASH

FLASH - NOR (SLC)

1Gbit

SPI - Quad I/O, QPI, DTR

133 MHz

50µs, 1ms

8 ns

2.7V ~ 3.6V

-40°C ~ 105°C (TA)

Surface Mount

24-LBGA

24-LFBGA (6x8)

NM24C09LM8

Fairchild Semiconductor

IC EEPROM 8KBIT I2C 100KHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 8Kbit
Memory Interface: I2C
Clock Frequency: 100 kHz
Write Cycle Time - Word, Page: 15ms
Access Time: 3.5 µs
Voltage - Supply: 2.7V ~ 4.5V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

パッケージ: -

Request a Quote

EEPROM

8Kbit

I2C

100 kHz

15ms

3.5 µs

2.7V ~ 4.5V

0°C ~ 70°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

MT29F2T08EMLEEJ4-QC-E-TR

Micron Technology Inc.

TLC 2T 256GX8 VBGA QDP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

Request a Quote

-

MT29F1T08EELCEJ4-QJ-C

Micron Technology Inc.

TLC 1T 128GX8 VBGA DDP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

Request a Quote

-

LC35256FT70UHSTLM-E

onsemi

256K STATIC RAMS

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

Request a Quote

-