ページ 943 - メモリ | 集積回路（IC）

部品番号	メーカ	説明	パッケージ	在庫	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IS42VM16800G-6BL-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 128MBIT 166MHZ 54BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile Memory Size: 128Mb (8M x 16) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: 5.5ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 54-TFBGA Supplier Device Package: 54-TFBGA (8x8)	パッケージ: 54-TFBGA	在庫3,280	DRAM	SDRAM - Mobile	128Mb (8M x 16)	Parallel	166MHz	-	5.5ns	1.7 V ~ 1.95 V	0°C ~ 70°C (TA)	Surface Mount	54-TFBGA	54-TFBGA (8x8)
IS49NLC36160-25B	ISSI, Integrated Silicon Solution Inc	IC DRAM 576MBIT 400MHZ 144BGA Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Size: 576Mb (16M x 36) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: - Access Time: 20ns Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 144-TFBGA Supplier Device Package: 144-FCBGA (11x18.5)	パッケージ: 144-TFBGA	在庫4,832	DRAM	DRAM	576Mb (16M x 36)	Parallel	400MHz	-	20ns	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	Surface Mount	144-TFBGA	144-FCBGA (11x18.5)
MTFC4GMTEA-4M IT TR	Micron Technology Inc.	IC FLASH 32GBIT 153WFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 32Gb (4G x 8) Memory Interface: MMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 153-WFBGA Supplier Device Package: 153-WFBGA (11.5x13)	パッケージ: 153-WFBGA	在庫6,880	FLASH	FLASH - NAND	32Gb (4G x 8)	MMC	-	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	153-WFBGA	153-WFBGA (11.5x13)
MT41K512M4HX-15E:D	Micron Technology Inc.	IC SDRAM 2GBIT 667MHZ 78FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 2Gb (512M x 4) Memory Interface: Parallel Clock Frequency: 667MHz Write Cycle Time - Word, Page: - Access Time: 13.5ns Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-TFBGA Supplier Device Package: 78-FBGA (9x11.5)	パッケージ: 78-TFBGA	在庫7,888	DRAM	SDRAM - DDR3L	2Gb (512M x 4)	Parallel	667MHz	-	13.5ns	1.283 V ~ 1.45 V	0°C ~ 95°C (TC)	Surface Mount	78-TFBGA	78-FBGA (9x11.5)
CAT24C164VP2IGT3	ON Semiconductor	IC EEPROM 16KBIT 400KHZ 8TDFN Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 16Kb (2K x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-WFDFN Exposed Pad Supplier Device Package: 8-TDFN (2x3)	パッケージ: 8-WFDFN Exposed Pad	在庫6,240	EEPROM	EEPROM	16Kb (2K x 8)	I2C	400kHz	5ms	900ns	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-WFDFN Exposed Pad	8-TDFN (2x3)
CY7C0831AV-167AXC	Cypress Semiconductor Corp	IC SRAM 2MBIT 167MHZ 120TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 2Mb (128K x 18) Memory Interface: Parallel Clock Frequency: 167MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 120-LQFP Supplier Device Package: 120-TQFP (14x14)	パッケージ: 120-LQFP	在庫4,880	SRAM	SRAM - Dual Port, Synchronous	2Mb (128K x 18)	Parallel	167MHz	-	-	3.135 V ~ 3.465 V	0°C ~ 70°C (TA)	Surface Mount	120-LQFP	120-TQFP (14x14)
AT93C46-10TI-2.7	Microchip Technology	IC EEPROM 1KBIT 2MHZ 8TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kb (128 x 8 , 64 x 16) Memory Interface: SPI Clock Frequency: 2MHz Write Cycle Time - Word, Page: 10ms Access Time: - Voltage - Supply: 2.7 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	パッケージ: 8-TSSOP (0.173", 4.40mm Width)	在庫8,532	EEPROM	EEPROM	1Kb (128 x 8 , 64 x 16)	SPI	2MHz	10ms	-	2.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
DS1230ABP-70IND	Maxim Integrated	IC NVSRAM 256KBIT 70NS 34PCM Memory Type: Non-Volatile Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: 4.75 V ~ 5.25 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 34-PowerCap? Module Supplier Device Package: 34-PowerCap Module	パッケージ: 34-PowerCap? Module	在庫6,416	NVSRAM	NVSRAM (Non-Volatile SRAM)	256Kb (32K x 8)	Parallel	-	70ns	70ns	4.75 V ~ 5.25 V	-40°C ~ 85°C (TA)	Surface Mount	34-PowerCap? Module	34-PowerCap Module
AT24C16-10PC-2.5	Microchip Technology	IC EEPROM 16KBIT 400KHZ 8DIP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 16Kb (2K x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	パッケージ: 8-DIP (0.300", 7.62mm)	在庫6,064	EEPROM	EEPROM	16Kb (2K x 8)	I2C	400kHz	5ms	900ns	2.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
CY7C1069GN30-10ZSXI	Cypress Semiconductor Corp	ASYNC SRAMS Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 16Mb (2M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10ns Voltage - Supply: 2.2 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫4,064	SRAM	SRAM - Asynchronous	16Mb (2M x 8)	Parallel	-	10ns	10ns	2.2 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
IS61DDB21M18A-300B4L	ISSI, Integrated Silicon Solution Inc	IC SDRAM 18MBIT 300MHZ 165BGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, DDR II Memory Size: 18Mb (1M x 18) Memory Interface: Parallel Clock Frequency: 300MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.71 V ~ 1.89 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-LFBGA (13x15)	パッケージ: 165-LBGA	在庫7,632	SRAM	SRAM - Synchronous, DDR II	18Mb (1M x 18)	Parallel	300MHz	-	-	1.71 V ~ 1.89 V	0°C ~ 70°C (TA)	Surface Mount	165-LBGA	165-LFBGA (13x15)
71V3577S85BQ8	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 8.5NS 165CABGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 4.5Mb (128K x 36) Memory Interface: Parallel Clock Frequency: 87MHz Write Cycle Time - Word, Page: - Access Time: 8.5ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-TBGA Supplier Device Package: 165-CABGA (13x15)	パッケージ: 165-TBGA	在庫6,752	SRAM	SRAM - Synchronous	4.5Mb (128K x 36)	Parallel	87MHz	-	8.5ns	3.135 V ~ 3.465 V	0°C ~ 70°C (TA)	Surface Mount	165-TBGA	165-CABGA (13x15)
IS61WV6416BLL-12BLI	ISSI, Integrated Silicon Solution Inc	IC SRAM 1MBIT 12NS 48MINIBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 1Mb (64K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 12ns Access Time: 12ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFBGA Supplier Device Package: 48-miniBGA (6x8)	パッケージ: 48-TFBGA	在庫6,816	SRAM	SRAM - Asynchronous	1Mb (64K x 16)	Parallel	-	12ns	12ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFBGA	48-miniBGA (6x8)
93LC76C-I/ST	Microchip Technology	IC EEPROM 8KBIT 3MHZ 8TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 8Kb (1K x 8, 512 x 16) Memory Interface: SPI Clock Frequency: 3MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	パッケージ: 8-TSSOP (0.173", 4.40mm Width)	在庫16,224	EEPROM	EEPROM	8Kb (1K x 8, 512 x 16)	SPI	3MHz	5ms	-	2.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
S29GL01GS11FHSS20	Cypress Semiconductor Corp	IC FLASH 1G PARALLEL 64BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 1Gb (64M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 60ns Access Time: 110ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-LBGA Supplier Device Package: 64-FBGA (13x11)	パッケージ: 64-LBGA	在庫5,520	FLASH	FLASH - NOR	1Gb (64M x 16)	Parallel	-	60ns	110ns	2.7 V ~ 3.6 V	0°C ~ 85°C (TA)	Surface Mount	64-LBGA	64-FBGA (13x11)
S29GL256S10DHV010	Cypress Semiconductor Corp	IC FLASH 256M PARALLEL 64BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mb (16M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 60ns Access Time: 100ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 64-LBGA Supplier Device Package: 64-FBGA (9x9)	パッケージ: 64-LBGA	在庫7,264	FLASH	FLASH - NOR	256Mb (16M x 16)	Parallel	-	60ns	100ns	2.7 V ~ 3.6 V	-40°C ~ 105°C (TA)	Surface Mount	64-LBGA	64-FBGA (9x9)
S29GL064N90FFI033	Cypress Semiconductor Corp	IC FLASH 64M PARALLEL 64BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (8M x 8, 4M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 90ns Access Time: 90ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-LBGA Supplier Device Package: 64-FBGA (13x11)	パッケージ: 64-LBGA	在庫4,064	FLASH	FLASH - NOR	64Mb (8M x 8, 4M x 16)	Parallel	-	90ns	90ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	64-LBGA	64-FBGA (13x11)
S25FL128SAGMFV013	Cypress Semiconductor Corp	IC FLASH 128M SPI 133MHZ 16SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (16M x 8) Memory Interface: SPI - Quad I/O Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOIC	パッケージ: 16-SOIC (0.295", 7.50mm Width)	在庫4,160	FLASH	FLASH - NOR	128Mb (16M x 8)	SPI - Quad I/O	133MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 105°C (TA)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOIC
CY7C1041GN30-10BVJXIT	Cypress Semiconductor Corp	IC SRAM 4M PARALLEL 48VFBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 4Mb (256K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10ns Voltage - Supply: 2.2 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-VFBGA Supplier Device Package: 48-VFBGA (6x8)	パッケージ: 48-VFBGA	在庫5,008	SRAM	SRAM - Asynchronous	4Mb (256K x 16)	Parallel	-	10ns	10ns	2.2 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-VFBGA	48-VFBGA (6x8)
DS28E36Q+T	Maxim Integrated	IC EEPROM 8K 1WIRE 6TDFN Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 8kb (8K x 1) Memory Interface: 1-Wire® Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.97 V ~ 3.63 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-TDFN (3x3)	パッケージ: 6-WDFN Exposed Pad	在庫6,528	EEPROM	EEPROM	8kb (8K x 1)	1-Wire®	-	-	-	2.97 V ~ 3.63 V	-40°C ~ 85°C (TA)	Surface Mount	6-WDFN Exposed Pad	6-TDFN (3x3)
MT29F2G01ABAGD12-IT:G TR	Micron Technology Inc.	IC FLASH 2G SPI 83MHZ TBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 2Gb (2G x 1) Memory Interface: SPI Clock Frequency: 83MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫3,728	FLASH	FLASH - NAND	2Gb (2G x 1)	SPI	83MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
BR93A66RFVM-WMTR	Rohm Semiconductor	MEMORY EEPROM Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 4Kb (256 x 16) Memory Interface: SPI Clock Frequency: 2MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 2.5V ~ 5.5V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width) Supplier Device Package: 8-MSOP	パッケージ: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)	在庫22,860	EEPROM	EEPROM	4Kb (256 x 16)	SPI	2MHz	5ms	-	2.5V ~ 5.5V	-40°C ~ 105°C (TA)	Surface Mount	8-VSSOP, 8-MSOP (0.110", 2.80mm Width)	8-MSOP
GS816236DGD-250I	GSI Technology Inc.	IC SRAM 18MBIT PARALLEL 165FPBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, Standard Memory Size: 18Mbit Memory Interface: Parallel Clock Frequency: 250 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.3V ~ 2.7V, 3V ~ 3.6V Operating Temperature: -40°C ~ 100°C (TJ) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FPBGA (15x13)	パッケージ: -	Request a Quote	SRAM	SRAM - Synchronous, Standard	18Mbit	Parallel	250 MHz	-	-	2.3V ~ 2.7V, 3V ~ 3.6V	-40°C ~ 100°C (TJ)	Surface Mount	165-LBGA	165-FPBGA (15x13)
CG10148AFT	Infineon Technologies	FRAM Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MT55L128L32P1T-10	Micron Technology Inc.	IC SRAM 4MBIT PAR 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - ZBT Memory Size: 4Mbit Memory Interface: Parallel Clock Frequency: 100 MHz Write Cycle Time - Word, Page: - Access Time: 5 ns Voltage - Supply: 3.135V ~ 3.465V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20.1)	パッケージ: -	Request a Quote	SRAM	SRAM - ZBT	4Mbit	Parallel	100 MHz	-	5 ns	3.135V ~ 3.465V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x20.1)
AM27S191SA-B3A	Advanced Micro Devices	IC PROM 16KBIT PARALLEL 28CLCC Memory Type: Non-Volatile Memory Format: PROM Technology: - Memory Size: 16Kbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 30 ns Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -55°C ~ 125°C (TC) Mounting Type: Surface Mount Package / Case: 28-CLCC Supplier Device Package: 28-CLCC	パッケージ: -	Request a Quote	PROM	-	16Kbit	Parallel	-	-	30 ns	4.5V ~ 5.5V	-55°C ~ 125°C (TC)	Surface Mount	28-CLCC	28-CLCC
NM93C46AVM8X	Fairchild Semiconductor	IC EEPROM 1KBIT MICROWIRE 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kbit Memory Interface: Microwire Clock Frequency: 1 MHz Write Cycle Time - Word, Page: 10ms Access Time: - Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	パッケージ: -	Request a Quote	EEPROM	EEPROM	1Kbit	Microwire	1 MHz	10ms	-	4.5V ~ 5.5V	-40°C ~ 125°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IS26KL256S-DABLE100	Infineon Technologies	INFINEON Memory Type: Non-Volatile Memory Format: FLASH Technology: HyperFlash Memory Size: 256Mbit Memory Interface: HyperBus Clock Frequency: 100 MHz Write Cycle Time - Word, Page: - Access Time: 96 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 24-VBGA Supplier Device Package: 24-VFBGA (6x8)	パッケージ: -	Request a Quote	FLASH	HyperFlash	256Mbit	HyperBus	100 MHz	-	96 ns	2.7V ~ 3.6V	-40°C ~ 125°C (TA)	Surface Mount	24-VBGA	24-VFBGA (6x8)

IS42VM16800G-6BL-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 128MBIT 166MHZ 54BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile
Memory Size: 128Mb (8M x 16)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: 5.5ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TFBGA
Supplier Device Package: 54-TFBGA (8x8)

パッケージ: 54-TFBGA

在庫3,280

DRAM

SDRAM - Mobile

128Mb (8M x 16)

Parallel

166MHz

-

5.5ns

1.7 V ~ 1.95 V

0°C ~ 70°C (TA)

Surface Mount

54-TFBGA

54-TFBGA (8x8)

IS49NLC36160-25B

ISSI, Integrated Silicon Solution Inc

IC DRAM 576MBIT 400MHZ 144BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: DRAM
Memory Size: 576Mb (16M x 36)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: -
Access Time: 20ns
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 144-TFBGA
Supplier Device Package: 144-FCBGA (11x18.5)

パッケージ: 144-TFBGA

在庫4,832

DRAM

576Mb (16M x 36)

Parallel

400MHz

-

20ns

1.7 V ~ 1.9 V

0°C ~ 70°C (TA)

Surface Mount

144-TFBGA

144-FCBGA (11x18.5)

MTFC4GMTEA-4M IT TR

Micron Technology Inc.

IC FLASH 32GBIT 153WFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 32Gb (4G x 8)
Memory Interface: MMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 153-WFBGA
Supplier Device Package: 153-WFBGA (11.5x13)

パッケージ: 153-WFBGA

在庫6,880

FLASH

FLASH - NAND

32Gb (4G x 8)

MMC

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

153-WFBGA

153-WFBGA (11.5x13)

MT41K512M4HX-15E:D

Micron Technology Inc.

IC SDRAM 2GBIT 667MHZ 78FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 2Gb (512M x 4)
Memory Interface: Parallel
Clock Frequency: 667MHz
Write Cycle Time - Word, Page: -
Access Time: 13.5ns
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-FBGA (9x11.5)

パッケージ: 78-TFBGA

在庫7,888

DRAM

SDRAM - DDR3L

2Gb (512M x 4)

Parallel

667MHz

-

13.5ns

1.283 V ~ 1.45 V

0°C ~ 95°C (TC)

Surface Mount

78-TFBGA

78-FBGA (9x11.5)

CAT24C164VP2IGT3

ON Semiconductor

IC EEPROM 16KBIT 400KHZ 8TDFN

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kb (2K x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WFDFN Exposed Pad
Supplier Device Package: 8-TDFN (2x3)

パッケージ: 8-WFDFN Exposed Pad

在庫6,240

EEPROM

16Kb (2K x 8)

I2C

400kHz

5ms

900ns

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-WFDFN Exposed Pad

8-TDFN (2x3)

CY7C0831AV-167AXC

Cypress Semiconductor Corp

IC SRAM 2MBIT 167MHZ 120TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 2Mb (128K x 18)
Memory Interface: Parallel
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 120-LQFP
Supplier Device Package: 120-TQFP (14x14)

パッケージ: 120-LQFP

在庫4,880

SRAM

SRAM - Dual Port, Synchronous

2Mb (128K x 18)

Parallel

167MHz

-

3.135 V ~ 3.465 V

0°C ~ 70°C (TA)

Surface Mount

120-LQFP

120-TQFP (14x14)

AT93C46-10TI-2.7

Microchip Technology

IC EEPROM 1KBIT 2MHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kb (128 x 8 , 64 x 16)
Memory Interface: SPI
Clock Frequency: 2MHz
Write Cycle Time - Word, Page: 10ms
Access Time: -
Voltage - Supply: 2.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

パッケージ: 8-TSSOP (0.173", 4.40mm Width)

在庫8,532

EEPROM

1Kb (128 x 8 , 64 x 16)

SPI

2MHz

10ms

-

2.7 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

DS1230ABP-70IND

Maxim Integrated

IC NVSRAM 256KBIT 70NS 34PCM

Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: 4.75 V ~ 5.25 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 34-PowerCap? Module
Supplier Device Package: 34-PowerCap Module

パッケージ: 34-PowerCap? Module

在庫6,416

NVSRAM

NVSRAM (Non-Volatile SRAM)

256Kb (32K x 8)

Parallel

-

70ns

4.75 V ~ 5.25 V

-40°C ~ 85°C (TA)

Surface Mount

34-PowerCap? Module

34-PowerCap Module

AT24C16-10PC-2.5

Microchip Technology

IC EEPROM 16KBIT 400KHZ 8DIP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kb (2K x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

パッケージ: 8-DIP (0.300", 7.62mm)

在庫6,064

EEPROM

16Kb (2K x 8)

I2C

400kHz

5ms

900ns

2.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

CY7C1069GN30-10ZSXI

Cypress Semiconductor Corp

ASYNC SRAMS

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Mb (2M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Voltage - Supply: 2.2 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫4,064

SRAM

SRAM - Asynchronous

16Mb (2M x 8)

Parallel

-

10ns

2.2 V ~ 3.6 V

-40°C ~ 85°C (TA)

-

IS61DDB21M18A-300B4L

ISSI, Integrated Silicon Solution Inc

IC SDRAM 18MBIT 300MHZ 165BGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, DDR II
Memory Size: 18Mb (1M x 18)
Memory Interface: Parallel
Clock Frequency: 300MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.71 V ~ 1.89 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-LFBGA (13x15)

パッケージ: 165-LBGA

在庫7,632

SRAM

SRAM - Synchronous, DDR II

18Mb (1M x 18)

Parallel

300MHz

-

1.71 V ~ 1.89 V

0°C ~ 70°C (TA)

Surface Mount

165-LBGA

165-LFBGA (13x15)

71V3577S85BQ8

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 8.5NS 165CABGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 4.5Mb (128K x 36)
Memory Interface: Parallel
Clock Frequency: 87MHz
Write Cycle Time - Word, Page: -
Access Time: 8.5ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-CABGA (13x15)

パッケージ: 165-TBGA

在庫6,752

SRAM

SRAM - Synchronous

4.5Mb (128K x 36)

Parallel

87MHz

-

8.5ns

3.135 V ~ 3.465 V

0°C ~ 70°C (TA)

Surface Mount

165-TBGA

165-CABGA (13x15)

IS61WV6416BLL-12BLI

ISSI, Integrated Silicon Solution Inc

IC SRAM 1MBIT 12NS 48MINIBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (64K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 12ns
Access Time: 12ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-miniBGA (6x8)

パッケージ: 48-TFBGA

在庫6,816

SRAM

SRAM - Asynchronous

1Mb (64K x 16)

Parallel

-

12ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFBGA

48-miniBGA (6x8)

93LC76C-I/ST

Microchip Technology

IC EEPROM 8KBIT 3MHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 8Kb (1K x 8, 512 x 16)
Memory Interface: SPI
Clock Frequency: 3MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

パッケージ: 8-TSSOP (0.173", 4.40mm Width)

在庫16,224

EEPROM

8Kb (1K x 8, 512 x 16)

SPI

3MHz

5ms

-

2.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

S29GL01GS11FHSS20

Cypress Semiconductor Corp

IC FLASH 1G PARALLEL 64BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 1Gb (64M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 60ns
Access Time: 110ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-FBGA (13x11)

パッケージ: 64-LBGA

在庫5,520

FLASH

FLASH - NOR

1Gb (64M x 16)

Parallel

-

60ns

110ns

2.7 V ~ 3.6 V

0°C ~ 85°C (TA)

Surface Mount

64-LBGA

64-FBGA (13x11)

S29GL256S10DHV010

Cypress Semiconductor Corp

IC FLASH 256M PARALLEL 64BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mb (16M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 60ns
Access Time: 100ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-FBGA (9x9)

パッケージ: 64-LBGA

在庫7,264

FLASH

FLASH - NOR

256Mb (16M x 16)

Parallel

-

60ns

100ns

2.7 V ~ 3.6 V

-40°C ~ 105°C (TA)

Surface Mount

64-LBGA

64-FBGA (9x9)

S29GL064N90FFI033

Cypress Semiconductor Corp

IC FLASH 64M PARALLEL 64BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (8M x 8, 4M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 90ns
Access Time: 90ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-FBGA (13x11)

パッケージ: 64-LBGA

在庫4,064

FLASH

FLASH - NOR

64Mb (8M x 8, 4M x 16)

Parallel

-

90ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

64-LBGA

64-FBGA (13x11)

S25FL128SAGMFV013

Cypress Semiconductor Corp

IC FLASH 128M SPI 133MHZ 16SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (16M x 8)
Memory Interface: SPI - Quad I/O
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOIC

パッケージ: 16-SOIC (0.295", 7.50mm Width)

在庫4,160

FLASH

FLASH - NOR

128Mb (16M x 8)

SPI - Quad I/O

133MHz

-

2.7 V ~ 3.6 V

-40°C ~ 105°C (TA)

Surface Mount

16-SOIC (0.295", 7.50mm Width)

16-SOIC

CY7C1041GN30-10BVJXIT

Cypress Semiconductor Corp

IC SRAM 4M PARALLEL 48VFBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (256K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Voltage - Supply: 2.2 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Supplier Device Package: 48-VFBGA (6x8)

パッケージ: 48-VFBGA

在庫5,008

SRAM

SRAM - Asynchronous

4Mb (256K x 16)

Parallel

-

10ns

2.2 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-VFBGA

48-VFBGA (6x8)

DS28E36Q+T

Maxim Integrated

IC EEPROM 8K 1WIRE 6TDFN

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 8kb (8K x 1)
Memory Interface: 1-Wire®
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.97 V ~ 3.63 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: 6-TDFN (3x3)

パッケージ: 6-WDFN Exposed Pad

在庫6,528

EEPROM

8kb (8K x 1)

1-Wire®

-

2.97 V ~ 3.63 V

-40°C ~ 85°C (TA)

Surface Mount

6-WDFN Exposed Pad

6-TDFN (3x3)

MT29F2G01ABAGD12-IT:G TR

Micron Technology Inc.

IC FLASH 2G SPI 83MHZ TBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 2Gb (2G x 1)
Memory Interface: SPI
Clock Frequency: 83MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫3,728

FLASH

FLASH - NAND

2Gb (2G x 1)

SPI

83MHz

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

-

BR93A66RFVM-WMTR

Rohm Semiconductor

MEMORY EEPROM

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 4Kb (256 x 16)
Memory Interface: SPI
Clock Frequency: 2MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Supplier Device Package: 8-MSOP

パッケージ: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)

在庫22,860

EEPROM

4Kb (256 x 16)

SPI

2MHz

5ms

-

2.5V ~ 5.5V

-40°C ~ 105°C (TA)

Surface Mount

8-VSSOP, 8-MSOP (0.110", 2.80mm Width)

8-MSOP

GS816236DGD-250I

GSI Technology Inc.

IC SRAM 18MBIT PARALLEL 165FPBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, Standard
Memory Size: 18Mbit
Memory Interface: Parallel
Clock Frequency: 250 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.3V ~ 2.7V, 3V ~ 3.6V
Operating Temperature: -40°C ~ 100°C (TJ)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FPBGA (15x13)

パッケージ: -

Request a Quote

SRAM

SRAM - Synchronous, Standard

18Mbit

Parallel

250 MHz

-

2.3V ~ 2.7V, 3V ~ 3.6V

-40°C ~ 100°C (TJ)

Surface Mount

165-LBGA

165-FPBGA (15x13)

CG10148AFT

Infineon Technologies

FRAM

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

Request a Quote

-

MT55L128L32P1T-10

Micron Technology Inc.

IC SRAM 4MBIT PAR 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - ZBT
Memory Size: 4Mbit
Memory Interface: Parallel
Clock Frequency: 100 MHz
Write Cycle Time - Word, Page: -
Access Time: 5 ns
Voltage - Supply: 3.135V ~ 3.465V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20.1)

パッケージ: -

Request a Quote

SRAM

SRAM - ZBT

4Mbit

Parallel

100 MHz

-

5 ns

3.135V ~ 3.465V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x20.1)

AM27S191SA-B3A

Advanced Micro Devices

IC PROM 16KBIT PARALLEL 28CLCC

Memory Type: Non-Volatile
Memory Format: PROM
Technology: -
Memory Size: 16Kbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 30 ns
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -55°C ~ 125°C (TC)
Mounting Type: Surface Mount
Package / Case: 28-CLCC
Supplier Device Package: 28-CLCC

パッケージ: -

Request a Quote

PROM

-

16Kbit

Parallel

-

30 ns

4.5V ~ 5.5V

-55°C ~ 125°C (TC)

Surface Mount

28-CLCC

NM93C46AVM8X

Fairchild Semiconductor

IC EEPROM 1KBIT MICROWIRE 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kbit
Memory Interface: Microwire
Clock Frequency: 1 MHz
Write Cycle Time - Word, Page: 10ms
Access Time: -
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

パッケージ: -

Request a Quote

EEPROM

1Kbit

Microwire

1 MHz

10ms

-

4.5V ~ 5.5V

-40°C ~ 125°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

IS26KL256S-DABLE100

Infineon Technologies

INFINEON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: HyperFlash
Memory Size: 256Mbit
Memory Interface: HyperBus
Clock Frequency: 100 MHz
Write Cycle Time - Word, Page: -
Access Time: 96 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Supplier Device Package: 24-VFBGA (6x8)

パッケージ: -

Request a Quote

FLASH

HyperFlash

256Mbit

HyperBus

100 MHz

-

96 ns

2.7V ~ 3.6V

-40°C ~ 125°C (TA)

Surface Mount

24-VBGA

24-VFBGA (6x8)