ページ 974 - メモリ | 集積回路(IC) | Heisener Electronics
連絡先
SalesDept@heisener.com +86-755-83210559-827
Language Translation

* Please refer to the English Version as our Official Version.

メモリ

レコード 62,144
ページ  974/2,220
画像
部品番号
メーカ
説明
パッケージ
在庫
数量
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot AT45DB321D-TU
Adesto Technologies

IC FLASH 32MBIT 66MHZ 28TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 32Mb (528 Bytes x 8192 pages)
  • Memory Interface: SPI
  • Clock Frequency: 66MHz
  • Write Cycle Time - Word, Page: 6ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 28-TSSOP (0.465", 11.80mm Width)
  • Supplier Device Package: 28-TSOP
パッケージ: 28-TSSOP (0.465", 11.80mm Width)
在庫369,924
FLASH
FLASH
32Mb (528 Bytes x 8192 pages)
SPI
66MHz
6ms
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TC)
Surface Mount
28-TSSOP (0.465", 11.80mm Width)
28-TSOP
hot MT29F64G08AFAAAWP-IT:A
Micron Technology Inc.

IC FLASH 64GBIT 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 64Gb (8G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP I
パッケージ: 48-TFSOP (0.724", 18.40mm Width)
在庫6,144
FLASH
FLASH - NAND
64Gb (8G x 8)
Parallel
-
-
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP I
IDT71V424YS12PH8
IDT, Integrated Device Technology Inc

IC SRAM 4MBIT 12NS 44TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 12ns
  • Access Time: 12ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 44-TSOP II
パッケージ: 44-TSOP (0.400", 10.16mm Width)
在庫7,472
SRAM
SRAM - Asynchronous
4Mb (512K x 8)
Parallel
-
12ns
12ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width)
44-TSOP II
IDT71V424S10Y8
IDT, Integrated Device Technology Inc

IC SRAM 4MBIT 10NS 36SOJ

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 36-BSOJ (0.400", 10.16mm Width)
  • Supplier Device Package: 36-SOJ
パッケージ: 36-BSOJ (0.400", 10.16mm Width)
在庫5,808
SRAM
SRAM - Asynchronous
4Mb (512K x 8)
Parallel
-
10ns
10ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
36-BSOJ (0.400", 10.16mm Width)
36-SOJ
IDT71V416VS15Y
IDT, Integrated Device Technology Inc

IC SRAM 4MBIT 15NS 44SOJ

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 4Mb (256K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 15ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-BSOJ (0.400", 10.16mm Width)
  • Supplier Device Package: 44-SOJ
パッケージ: 44-BSOJ (0.400", 10.16mm Width)
在庫5,280
SRAM
SRAM - Asynchronous
4Mb (256K x 16)
Parallel
-
15ns
15ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
44-BSOJ (0.400", 10.16mm Width)
44-SOJ
CY7C1312CV18-200BZC
Cypress Semiconductor Corp

IC SRAM 18MBIT 200MHZ 165FBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, QDR II
  • Memory Size: 18Mb (1M x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-LBGA
  • Supplier Device Package: 165-FBGA (13x15)
パッケージ: 165-LBGA
在庫4,720
SRAM
SRAM - Synchronous, QDR II
18Mb (1M x 18)
Parallel
200MHz
-
-
1.7 V ~ 1.9 V
0°C ~ 70°C (TA)
Surface Mount
165-LBGA
165-FBGA (13x15)
CAT28C64BLI12
ON Semiconductor

IC EEPROM 64KBIT 120NS 28DIP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 64Kb (8K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 120ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 28-DIP (0.600", 15.24mm)
  • Supplier Device Package: 28-PDIP
パッケージ: 28-DIP (0.600", 15.24mm)
在庫6,336
EEPROM
EEPROM
64Kb (8K x 8)
Parallel
-
5ms
120ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Through Hole
28-DIP (0.600", 15.24mm)
28-PDIP
MT28F008B5VG-8 TET TR
Micron Technology Inc.

IC FLASH 8MBIT 80NS 40TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 8Mb (1M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 80ns
  • Access Time: 80ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 40-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 40-TSOP I
パッケージ: 40-TFSOP (0.724", 18.40mm Width)
在庫4,560
FLASH
FLASH - NOR
8Mb (1M x 8)
Parallel
-
80ns
80ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
40-TFSOP (0.724", 18.40mm Width)
40-TSOP I
AT49BV321T-11CI
Microchip Technology

IC FLASH 32MBIT 110NS 48CBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 32Mb (4M x 8, 2M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 150µs
  • Access Time: 110ns
  • Voltage - Supply: 2.65 V ~ 3.3 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFBGA, CSPBGA
  • Supplier Device Package: 48-CBGA (6x8)
パッケージ: 48-TFBGA, CSPBGA
在庫2,100
FLASH
FLASH
32Mb (4M x 8, 2M x 16)
Parallel
-
150µs
110ns
2.65 V ~ 3.3 V
-40°C ~ 85°C (TC)
Surface Mount
48-TFBGA, CSPBGA
48-CBGA (6x8)
AT49F001N-90VC
Microchip Technology

IC FLASH 1MBIT 90NS 32VSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 50µs
  • Access Time: 90ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 32-TFSOP (0.488", 12.40mm Width)
  • Supplier Device Package: 32-VSOP
パッケージ: 32-TFSOP (0.488", 12.40mm Width)
在庫4,016
FLASH
FLASH
1Mb (128K x 8)
Parallel
-
50µs
90ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TC)
Surface Mount
32-TFSOP (0.488", 12.40mm Width)
32-VSOP
AT27BV040-12TC
Microchip Technology

IC OTP 4MBIT 120NS 32TSOP

  • Memory Type: Non-Volatile
  • Memory Format: EPROM
  • Technology: EPROM - OTP
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 120ns
  • Voltage - Supply: 2.7 V ~ 3.6 V, 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 32-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 32-TSOP
パッケージ: 32-TFSOP (0.724", 18.40mm Width)
在庫5,520
EPROM
EPROM - OTP
4Mb (512K x 8)
Parallel
-
-
120ns
2.7 V ~ 3.6 V, 4.5 V ~ 5.5 V
0°C ~ 70°C (TC)
Surface Mount
32-TFSOP (0.724", 18.40mm Width)
32-TSOP
AT28HC64B-12JI
Microchip Technology

IC EEPROM 64KBIT 120NS 32PLCC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 64Kb (8K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ms
  • Access Time: 120ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 32-LCC (J-Lead)
  • Supplier Device Package: 32-PLCC
パッケージ: 32-LCC (J-Lead)
在庫3,568
EEPROM
EEPROM
64Kb (8K x 8)
Parallel
-
10ms
120ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TC)
Surface Mount
32-LCC (J-Lead)
32-PLCC
hot AT28HC256F-90UM/883
Microchip Technology

IC EEPROM 256KBIT 90NS 28CPGA

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 3ms
  • Access Time: 90ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -55°C ~ 125°C (TC)
  • Mounting Type: Through Hole
  • Package / Case: 28-BCPGA
  • Supplier Device Package: 28-CPGA (13.55x15.06)
パッケージ: 28-BCPGA
在庫7,424
EEPROM
EEPROM
256Kb (32K x 8)
Parallel
-
3ms
90ns
4.5 V ~ 5.5 V
-55°C ~ 125°C (TC)
Through Hole
28-BCPGA
28-CPGA (13.55x15.06)
MT29F64G08CBCDBJ4-6R:D TR
Micron Technology Inc.

IC FLASH 64GBIT 167MHZ 132VBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 64Gb (8G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 167MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫6,240
FLASH
FLASH - NAND
64Gb (8G x 8)
Parallel
167MHz
-
-
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
-
-
-
JS28F512M29EWLB TR
Micron Technology Inc.

IC FLASH 512MBIT 110NS 56TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 512Mb (64M x 8, 32M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 110ns
  • Access Time: 110ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 56-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 56-TSOP (14x20)
パッケージ: 56-TFSOP (0.724", 18.40mm Width)
在庫3,584
FLASH
FLASH - NOR
512Mb (64M x 8, 32M x 16)
Parallel
-
110ns
110ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
56-TFSOP (0.724", 18.40mm Width)
56-TSOP (14x20)
S29CD016J0PFAM010
Cypress Semiconductor Corp

IC FLASH 16MBIT 66MHZ 80BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 16Mb (512K x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 66MHz
  • Write Cycle Time - Word, Page: 60ns
  • Access Time: 54ns
  • Voltage - Supply: 1.65 V ~ 2.75 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 80-LBGA
  • Supplier Device Package: 80-Fortified BGA (13x11)
パッケージ: 80-LBGA
在庫6,768
FLASH
FLASH - NOR
16Mb (512K x 32)
Parallel
66MHz
60ns
54ns
1.65 V ~ 2.75 V
-40°C ~ 125°C (TA)
Surface Mount
80-LBGA
80-Fortified BGA (13x11)
M24M01-DFMN6TP
STMicroelectronics

IC EEPROM 1MBIT 1MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: I2C
  • Clock Frequency: 1MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 500ns
  • Voltage - Supply: 1.7 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
パッケージ: 8-SOIC (0.154", 3.90mm Width)
在庫4,688
EEPROM
EEPROM
1Mb (128K x 8)
I2C
1MHz
5ms
500ns
1.7 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
AS4C64M8D2-25BAN
Alliance Memory, Inc.

IC SDRAM 512MBIT 400MHZ 60BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR2
  • Memory Size: 512Mb (64M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 400MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 400ps
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: -40°C ~ 105°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 60-TFBGA
  • Supplier Device Package: 60-FBGA (8x10)
パッケージ: 60-TFBGA
在庫6,512
DRAM
SDRAM - DDR2
512Mb (64M x 8)
Parallel
400MHz
15ns
400ps
1.7 V ~ 1.9 V
-40°C ~ 105°C (TC)
Surface Mount
60-TFBGA
60-FBGA (8x10)
NM27C020QE120
ON Semiconductor

IC EPROM 2M PARALLEL 32CDIP

  • Memory Type: Non-Volatile
  • Memory Format: EPROM
  • Technology: EPROM - UV
  • Memory Size: 2Mb (256K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 120ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 32-CDIP (0.685", 17.40mm) Window
  • Supplier Device Package: 32-CDIP
パッケージ: 32-CDIP (0.685", 17.40mm) Window
在庫4,336
EPROM
EPROM - UV
2Mb (256K x 8)
Parallel
-
-
120ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Through Hole
32-CDIP (0.685", 17.40mm) Window
32-CDIP
S29GL128S10FAIV20
Cypress Semiconductor Corp

IC FLASH 128M PARALLEL 64BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 128Mb (8M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 60ns
  • Access Time: 100ns
  • Voltage - Supply: 1.65 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LBGA
  • Supplier Device Package: 64-FBGA (13x11)
パッケージ: 64-LBGA
在庫2,640
FLASH
FLASH - NOR
128Mb (8M x 16)
Parallel
-
60ns
100ns
1.65 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
64-LBGA
64-FBGA (13x11)
W25Q64CVWSP1
Winbond Electronics

IC FLASH 64MBIT SPI/QUAD 80MHZ

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 64Mbit
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 80 MHz
  • Write Cycle Time - Word, Page: 50µs, 3ms
  • Access Time: 6 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
Request a Quote
FLASH
FLASH - NOR
64Mbit
SPI - Quad I/O
80 MHz
50µs, 3ms
6 ns
2.7V ~ 3.6V
-40°C ~ 125°C (TA)
-
-
-
CY62256NLL-70ZC
Cypress Semiconductor Corp

IC SRAM 256KBIT PAR 28TSOP I

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 256Kbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70 ns
  • Voltage - Supply: 4.5V ~ 5.5V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 28-TSSOP (0.465", 11.80mm Width)
  • Supplier Device Package: 28-TSOP I
パッケージ: -
Request a Quote
SRAM
SRAM - Asynchronous
256Kbit
Parallel
-
70ns
70 ns
4.5V ~ 5.5V
0°C ~ 70°C (TA)
Surface Mount
28-TSSOP (0.465", 11.80mm Width)
28-TSOP I
R1Q2A7218ABB-40IB0
Renesas Electronics Corporation

STANDARD SRAM, 4MX18, 0.45NS

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
CY15B102QN-50LHXI
Infineon Technologies

IC FRAM 2MBIT SPI 50MHZ 8DFN

  • Memory Type: Non-Volatile
  • Memory Format: FRAM
  • Technology: FRAM (Ferroelectric RAM)
  • Memory Size: 2Mbit
  • Memory Interface: SPI
  • Clock Frequency: 50 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 8 ns
  • Voltage - Supply: 1.8V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-DFN (5x6)
パッケージ: -
Request a Quote
FRAM
FRAM (Ferroelectric RAM)
2Mbit
SPI
50 MHz
-
8 ns
1.8V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
8-WDFN Exposed Pad
8-DFN (5x6)
AS4C1G8D4A-75BCN
Alliance Memory, Inc.

IC DRAM 8GBIT PARALLEL 78FBGA

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
CY27H010-45WMB
Cypress Semiconductor Corp

IC EPROM 1MBIT PARALLEL 32CDIP

  • Memory Type: Non-Volatile
  • Memory Format: EPROM
  • Technology: EPROM - UV
  • Memory Size: 1Mbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 45 ns
  • Voltage - Supply: 4.5V ~ 5.5V
  • Operating Temperature: -55°C ~ 125°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 32-CDIP (0.600", 15.24mm) Window
  • Supplier Device Package: 32-CDIP
パッケージ: -
Request a Quote
EPROM
EPROM - UV
1Mbit
Parallel
-
-
45 ns
4.5V ~ 5.5V
-55°C ~ 125°C (TA)
Through Hole
32-CDIP (0.600", 15.24mm) Window
32-CDIP
S26HL512TFPBHI010
Infineon Technologies

IC FLASH 512MBIT SPI 24FBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 512Mbit
  • Memory Interface: SPI
  • Clock Frequency: 166 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-VBGA
  • Supplier Device Package: 24-FBGA (6x8)
パッケージ: -
Request a Quote
FLASH
FLASH - NOR
512Mbit
SPI
166 MHz
-
-
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
24-VBGA
24-FBGA (6x8)
MWS5101ADL3
Harris Corporation

IC SRAM 1KBIT PARALLEL 22CDIP SB

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 1Kbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 400ns
  • Access Time: 350 ns
  • Voltage - Supply: 4.5V ~ 5.5V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 22-CDIP
  • Supplier Device Package: 22-CDIP SB
パッケージ: -
Request a Quote
SRAM
SRAM - Asynchronous
1Kbit
Parallel
-
400ns
350 ns
4.5V ~ 5.5V
0°C ~ 70°C (TA)
Through Hole
22-CDIP
22-CDIP SB