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説明
パッケージ
在庫
数量
Channel Type
Number of Drivers
Gate Type
Voltage - Supply
Logic Voltage - VIL, VIH
Current - Peak Output (Source, Sink)
Input Type
High Side Voltage - Max (Bootstrap)
Rise / Fall Time (Typ)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IR2151SPBF
Infineon Technologies

IC DRVR HALF BRDG SELF-OSC 8SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 125mA, 250mA
  • Input Type: RC Input Circuit
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 80ns, 40ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
パッケージ: 8-SOIC (0.154", 3.90mm Width)
在庫356
Synchronous
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
-
125mA, 250mA
RC Input Circuit
600V
80ns, 40ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
IR1175
Infineon Technologies

IC DRIVER SYNC 5V 2A 20-DIP

  • Driven Configuration: Low-Side
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4 V ~ 5.5 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 2A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 20ns, 20ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 20-DIP (0.300", 7.62mm)
  • Supplier Device Package: 20-DIP
パッケージ: 20-DIP (0.300", 7.62mm)
在庫362
Synchronous
2
N-Channel MOSFET
4 V ~ 5.5 V
-
2A, 2A
Non-Inverting
-
20ns, 20ns
-40°C ~ 150°C (TJ)
Through Hole
20-DIP (0.300", 7.62mm)
20-DIP
hotIR2107
Infineon Technologies

IC DRIVER HIGH/LOW DRIVER 8-DIP

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.7V
  • Current - Peak Output (Source, Sink): 200mA, 350mA
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 150ns, 50ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-DIP
パッケージ: 8-DIP (0.300", 7.62mm)
在庫289
Independent
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.7V
200mA, 350mA
Inverting
600V
150ns, 50ns
-40°C ~ 150°C (TJ)
Through Hole
8-DIP (0.300", 7.62mm)
8-DIP
ISL6614BIBZ-T
Intersil

IC DRVR DUAL SYNC BUCK 14-SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 4
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 7 V ~ 13.2 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 1.25A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 36V
  • Rise / Fall Time (Typ): 26ns, 18ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 14-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 14-SOIC
パッケージ: 14-SOIC (0.154", 3.90mm Width)
在庫294
Synchronous
4
N-Channel MOSFET
7 V ~ 13.2 V
-
1.25A, 2A
Non-Inverting
36V
26ns, 18ns
-40°C ~ 125°C (TJ)
Surface Mount
14-SOIC (0.154", 3.90mm Width)
14-SOIC
L6743TR
STMicroelectronics

IC MOSFET DRIVER HIGH CURR 8SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 5 V ~ 12 V
  • Logic Voltage - VIL, VIH: 0.8V, 2V
  • Current - Peak Output (Source, Sink): 2A, -
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 41V
  • Rise / Fall Time (Typ): -
  • Operating Temperature: 0°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
パッケージ: 8-SOIC (0.154", 3.90mm Width)
在庫305
Synchronous
2
N-Channel MOSFET
5 V ~ 12 V
0.8V, 2V
2A, -
Non-Inverting
41V
-
0°C ~ 125°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
IXDN514PI
IXYS

IC GATE DRIVER SGL 14A 8-DIP

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 30 V
  • Logic Voltage - VIL, VIH: 1V, 2.5V
  • Current - Peak Output (Source, Sink): 14A, 14A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 25ns, 22ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
パッケージ: 8-DIP (0.300", 7.62mm)
在庫292
Single
1
IGBT, N-Channel, P-Channel MOSFET
4.5 V ~ 30 V
1V, 2.5V
14A, 14A
Non-Inverting
-
25ns, 22ns
-55°C ~ 150°C (TJ)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
IXDE509D1
IXYS

IC GATE DRIVER 9A 6-DFN

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 30 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.4V
  • Current - Peak Output (Source, Sink): 9A, 9A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 25ns, 23ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-VDFN Exposed Pad
  • Supplier Device Package: 6-DFN (4x5)
パッケージ: 6-VDFN Exposed Pad
在庫497
Single
1
IGBT, N-Channel, P-Channel MOSFET
4.5 V ~ 30 V
0.8V, 2.4V
9A, 9A
Inverting
-
25ns, 23ns
-55°C ~ 150°C (TJ)
Surface Mount
6-VDFN Exposed Pad
6-DFN (4x5)
ISL6610ACRZ-T
Intersil

IC MOSFET DRVR DUAL SYNC 16-QFN

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 4
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): -, 4A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 36V
  • Rise / Fall Time (Typ): 8ns, 8ns
  • Operating Temperature: 0°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-VQFN Exposed Pad
  • Supplier Device Package: 16-QFN (4x4)
パッケージ: 16-VQFN Exposed Pad
在庫148
Synchronous
4
N-Channel MOSFET
4.5 V ~ 5.5 V
-
-, 4A
Non-Inverting
36V
8ns, 8ns
0°C ~ 125°C (TJ)
Surface Mount
16-VQFN Exposed Pad
16-QFN (4x4)
ISL6612BEIBZ
Intersil

IC MOSFET DRVR SYNC BUCK 8EPSOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 7 V ~ 13.2 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 1.25A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 36V
  • Rise / Fall Time (Typ): 26ns, 18ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
パッケージ: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
在庫442
Synchronous
2
N-Channel MOSFET
7 V ~ 13.2 V
-
1.25A, 2A
Non-Inverting
36V
26ns, 18ns
-40°C ~ 125°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC-EP
HIP2100IR4
Intersil

IC DRIVER HALF BRIDGE 100V 12DFN

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 9 V ~ 14 V
  • Logic Voltage - VIL, VIH: 4V, 7V
  • Current - Peak Output (Source, Sink): 2A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 114V
  • Rise / Fall Time (Typ): 10ns, 10ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 12-VFDFN Exposed Pad
  • Supplier Device Package: 12-DFN (4x4)
パッケージ: 12-VFDFN Exposed Pad
在庫127
Independent
2
N-Channel MOSFET
9 V ~ 14 V
4V, 7V
2A, 2A
Non-Inverting
114V
10ns, 10ns
-55°C ~ 150°C (TJ)
Surface Mount
12-VFDFN Exposed Pad
12-DFN (4x4)
hotL6385
STMicroelectronics

IC DRIVER HI/LO SIDE HV 8MINIDIP

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 17V (Max)
  • Logic Voltage - VIL, VIH: 1.5V, 3.6V
  • Current - Peak Output (Source, Sink): 400mA, 650mA
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 50ns, 30ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-Mini DIP
パッケージ: 8-DIP (0.300", 7.62mm)
在庫33,462
Independent
2
IGBT, N-Channel MOSFET
17V (Max)
1.5V, 3.6V
400mA, 650mA
Inverting
600V
50ns, 30ns
-40°C ~ 150°C (TJ)
Through Hole
8-DIP (0.300", 7.62mm)
8-Mini DIP
U6083B-M
Microchip Technology

IC PWM HIGH-SIDE SWITCH 8-DIP

  • Driven Configuration: High-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 25V (Max)
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): -
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-DIP
パッケージ: 8-DIP (0.300", 7.62mm)
在庫252
Single
1
N-Channel MOSFET
25V (Max)
-
-
Non-Inverting
-
-
-40°C ~ 150°C (TJ)
Through Hole
8-DIP (0.300", 7.62mm)
8-DIP
hotNCP5351DR2
ON Semiconductor

IC DRIVER MOSFET DUAL 4A 8SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 6.5 V
  • Logic Voltage - VIL, VIH: 0.8V, 2V
  • Current - Peak Output (Source, Sink): 4A, 4A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): 25V
  • Rise / Fall Time (Typ): 8ns, 14ns
  • Operating Temperature: -30°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
パッケージ: 8-SOIC (0.154", 3.90mm Width)
在庫565
Synchronous
2
N-Channel MOSFET
4.5 V ~ 6.5 V
0.8V, 2V
4A, 4A
Inverting, Non-Inverting
25V
8ns, 14ns
-30°C ~ 125°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hotMC33153P
ON Semiconductor

IC DRIVER GATE SINGLE IGBT 8DIP

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 11 V ~ 20 V
  • Logic Voltage - VIL, VIH: 1.2V, 3.2V
  • Current - Peak Output (Source, Sink): 1A, 2A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 17ns, 17ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
パッケージ: 8-DIP (0.300", 7.62mm)
在庫17,138
Single
1
IGBT, N-Channel MOSFET
11 V ~ 20 V
1.2V, 3.2V
1A, 2A
Inverting
-
17ns, 17ns
-40°C ~ 150°C (TJ)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
LTC7004MPMSE#TRPBF
Linear Technology

FAST 65V PROTECTED HIGH-SIDE NMO

  • Driven Configuration: High-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 60V (Max)
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): -
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 80V
  • Rise / Fall Time (Typ): 90ns, 40ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫496
Single
1
N-Channel MOSFET
60V (Max)
-
-
Non-Inverting
80V
90ns, 40ns
-55°C ~ 150°C (TJ)
-
-
-
MAX5062AASA+
Maxim Integrated

IC DRIVER HALF BRDG HS 8-SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 8 V ~ 12.6 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 2A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 125V
  • Rise / Fall Time (Typ): 65ns, 65ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
パッケージ: 8-SOIC (0.154", 3.90mm Width)
在庫450
Independent
2
N-Channel MOSFET
8 V ~ 12.6 V
-
2A, 2A
Non-Inverting
125V
65ns, 65ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
TC4427AEMF713
Microchip Technology

IC MOSFET DVR 1.5A DUAL HS 8DFN

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 18 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.4V
  • Current - Peak Output (Source, Sink): 1.5A, 1.5A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 25ns, 25ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-VDFN Exposed Pad
  • Supplier Device Package: 8-DFN-S (6x5)
パッケージ: 8-VDFN Exposed Pad
在庫387
Independent
2
N-Channel, P-Channel MOSFET
4.5 V ~ 18 V
0.8V, 2.4V
1.5A, 1.5A
Non-Inverting
-
25ns, 25ns
-40°C ~ 150°C (TJ)
Surface Mount
8-VDFN Exposed Pad
8-DFN-S (6x5)
MCP14A0602-E/MS
Microchip Technology

IC MOSFET DRIVER 6A 8MSOP

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 18 V
  • Logic Voltage - VIL, VIH: 0.8V, 2V
  • Current - Peak Output (Source, Sink): 6A, 6A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 10ns, 10ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package: 8-MSOP
パッケージ: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
在庫976
Single
1
N-Channel, P-Channel MOSFET
4.5 V ~ 18 V
0.8V, 2V
6A, 6A
Non-Inverting
-
10ns, 10ns
-40°C ~ 150°C (TJ)
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
8-MSOP
hotMAX8702ETP+
Maxim Integrated

IC DRVR MOSFET DUAL 20-TQFN

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 4
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 28 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.4V
  • Current - Peak Output (Source, Sink): 1.5A, 1.5A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 16ns, 14ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 20-WFQFN Exposed Pad
  • Supplier Device Package: 20-TQFN (4x4)
パッケージ: 20-WFQFN Exposed Pad
在庫1,381
Synchronous
4
N-Channel MOSFET
4.5 V ~ 28 V
0.8V, 2.4V
1.5A, 1.5A
Non-Inverting
-
16ns, 14ns
-40°C ~ 150°C (TJ)
Surface Mount
20-WFQFN Exposed Pad
20-TQFN (4x4)
hotTC427COA
Microchip Technology

IC MOSFET DVR 1.5A DUAL HS 8SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 18 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.4V
  • Current - Peak Output (Source, Sink): 1.5A, 1.5A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 30ns, 30ns
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
パッケージ: 8-SOIC (0.154", 3.90mm Width)
在庫78,626
Independent
2
N-Channel, P-Channel MOSFET
4.5 V ~ 18 V
0.8V, 2.4V
1.5A, 1.5A
Non-Inverting
-
30ns, 30ns
0°C ~ 70°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hotIXDI604PI
IXYS Integrated Circuits Division

IC GATE DVR 4A INV 8-DIP

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 4A, 4A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 9ns, 8ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-DIP
パッケージ: 8-DIP (0.300", 7.62mm)
在庫849
Independent
2
IGBT, N-Channel, P-Channel MOSFET
4.5 V ~ 35 V
0.8V, 3V
4A, 4A
Inverting
-
9ns, 8ns
-55°C ~ 150°C (TJ)
Through Hole
8-DIP (0.300", 7.62mm)
8-DIP
FAN3216TMX_F085
Fairchild/ON Semiconductor

IC GATE DRIVER DUAL 2A 8-SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 18 V
  • Logic Voltage - VIL, VIH: 0.8V, 2V
  • Current - Peak Output (Source, Sink): 3A, 3A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 12ns, 9ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
パッケージ: 8-SOIC (0.154", 3.90mm Width)
在庫413
Synchronous
2
N-Channel MOSFET
4.5 V ~ 18 V
0.8V, 2V
3A, 3A
Inverting
-
12ns, 9ns
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
MCP14E4-E/P
Microchip Technology

IC MOSFET DVR 4.0A DUAL 8DIP

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 18 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.4V
  • Current - Peak Output (Source, Sink): 4A, 4A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 15ns, 18ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
パッケージ: 8-DIP (0.300", 7.62mm)
在庫658
Independent
2
IGBT, N-Channel, P-Channel MOSFET
4.5 V ~ 18 V
0.8V, 2.4V
4A, 4A
Non-Inverting
-
15ns, 18ns
-40°C ~ 150°C (TJ)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
NCV5106ADR2G
ON Semiconductor

IC MOSFET DVR HIGH VOLT 8SOIC

  • Driven Configuration: -
  • Channel Type: -
  • Number of Drivers: -
  • Gate Type: -
  • Voltage - Supply: -
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): -
  • Input Type: -
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫370
-
-
-
-
-
-
-
-
-
-
-
-
-
FL73282MX
ON Semiconductor

IC GATE DVR HALF BRIDGE 8SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.5V
  • Current - Peak Output (Source, Sink): 350mA, 650mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 900V
  • Rise / Fall Time (Typ): 60ns, 30ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
パッケージ: 8-SOIC (0.154", 3.90mm Width)
在庫4,331
Independent
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.5V
350mA, 650mA
Non-Inverting
900V
60ns, 30ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hotMAX4427ESA+TG002
Maxim Integrated

INTEGRATED CIRCUIT

  • Driven Configuration: -
  • Channel Type: -
  • Number of Drivers: -
  • Gate Type: -
  • Voltage - Supply: -
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): -
  • Input Type: -
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫464
-
-
-
-
-
-
-
-
-
-
-
-
-
HIP6604BCR
Renesas Electronics America

IC DRIVER MOSF SYNC BUCK 16-QFN

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 10.8 V ~ 13.2 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): -
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 15V
  • Rise / Fall Time (Typ): 20ns, 20ns
  • Operating Temperature: 0°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-VQFN Exposed Pad
  • Supplier Device Package: 16-QFN (4x4)
パッケージ: 16-VQFN Exposed Pad
在庫252
Synchronous
2
N-Channel MOSFET
10.8 V ~ 13.2 V
-
-
Non-Inverting
15V
20ns, 20ns
0°C ~ 125°C (TJ)
Surface Mount
16-VQFN Exposed Pad
16-QFN (4x4)
1SP0635V2M1-CM1200HC-66H
Power Integrations

MODULE GATE DVR SGL P&P 35A

  • Driven Configuration: -
  • Channel Type: -
  • Number of Drivers: -
  • Gate Type: -
  • Voltage - Supply: -
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): -
  • Input Type: -
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫396
-
-
-
-
-
-
-
-
-
-
-
-
-
HIP4083ABZ
Renesas Electronics America

IC DRIVER HISIDE N-CH 3PH 16SOIC

  • Driven Configuration: High-Side
  • Channel Type: 3-Phase
  • Number of Drivers: 3
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 7 V ~ 15 V
  • Logic Voltage - VIL, VIH: 1V, 2.5V
  • Current - Peak Output (Source, Sink): -
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): 95V
  • Rise / Fall Time (Typ): 35ns, 30ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SOIC
パッケージ: 16-SOIC (0.154", 3.90mm Width)
在庫210
3-Phase
3
N-Channel MOSFET
7 V ~ 15 V
1V, 2.5V
-
Inverting
95V
35ns, 30ns
-40°C ~ 150°C (TJ)
Surface Mount
16-SOIC (0.154", 3.90mm Width)
16-SOIC
hotISL6615AIRZ-T
Renesas Electronics America

IC MOSFET DRVR SYNC HF 6A 10-DFN

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 6.8 V ~ 13.2 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 2.5A, 4A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 36V
  • Rise / Fall Time (Typ): 13ns, 10ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 10-VFDFN Exposed Pad
  • Supplier Device Package: 10-DFN (3x3)
パッケージ: 10-VFDFN Exposed Pad
在庫1,174
Synchronous
2
N-Channel MOSFET
6.8 V ~ 13.2 V
-
2.5A, 4A
Non-Inverting
36V
13ns, 10ns
-40°C ~ 125°C (TJ)
Surface Mount
10-VFDFN Exposed Pad
10-DFN (3x3)