ページ 117 - Micron Technology Inc. 製品 - メモリ | Heisener Electronics
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Micron Technology Inc. 製品 - メモリ

レコード 10,993
ページ  117/393
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部品番号
メーカ
説明
パッケージ
在庫
数量
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
MT29TZZZ7D6EKKFB-107 W.96V
Micron Technology Inc.

MLC EMMC/LPDDR3 152G

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫3,280
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-
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MT29TZZZ5D6JKFRL-107 W.96R
Micron Technology Inc.

MLC EMMC/LPDDR3 144G

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫3,984
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MT29TZZZ5D6EKFRL-107 W.96R
Micron Technology Inc.

MLC EMMC/LPDDR3 144G

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫2,128
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-
-
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hot MT29TZZZ4D4BKERL-125 W.94M
Micron Technology Inc.

MLC EMMC/LPDDR2 36G

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫4,544
-
-
-
-
-
-
-
-
-
-
-
-
MT29RZ4C8DZZMHAN-18W.80Y
Micron Technology Inc.

IC FLASH RAM 4G PARALLEL 533MHZ

  • Memory Type: Non-Volatile
  • Memory Format: FLASH, RAM
  • Technology: FLASH - NAND, DRAM - LPDDR2
  • Memory Size: 4Gb (256M x 16)(NAND), 4G (128M x 32)(LPDDR2)
  • Memory Interface: Parallel
  • Clock Frequency: 533MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.8V
  • Operating Temperature: -25°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫4,704
FLASH, RAM
FLASH - NAND, DRAM - LPDDR2
4Gb (256M x 16)(NAND), 4G (128M x 32)(LPDDR2)
Parallel
533MHz
-
-
1.8V
-25°C ~ 85°C (TA)
-
-
-
MT29RZ4C8DZZMHAN-18W.80D
Micron Technology Inc.

IC FLASH RAM 4G PARALLEL 533MHZ

  • Memory Type: Non-Volatile
  • Memory Format: FLASH, RAM
  • Technology: FLASH - NAND, DRAM - LPDDR2
  • Memory Size: 4Gb (256M x 16)(NAND), 4G (128M x 32)(LPDDR2)
  • Memory Interface: Parallel
  • Clock Frequency: 533MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.8V
  • Operating Temperature: -25°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫3,184
FLASH, RAM
FLASH - NAND, DRAM - LPDDR2
4Gb (256M x 16)(NAND), 4G (128M x 32)(LPDDR2)
Parallel
533MHz
-
-
1.8V
-25°C ~ 85°C (TA)
-
-
-
MT29RZ4C4DZZMGMF-18W.80C
Micron Technology Inc.

IC FLASH RAM 4G PARALLEL 533MHZ

  • Memory Type: Non-Volatile
  • Memory Format: FLASH, RAM
  • Technology: FLASH - NAND, DRAM - LPDDR2
  • Memory Size: 4Gb (256M x 16)(NAND), 4G (128M x 32)(LPDDR2)
  • Memory Interface: Parallel
  • Clock Frequency: 533MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.8V
  • Operating Temperature: -25°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫7,008
FLASH, RAM
FLASH - NAND, DRAM - LPDDR2
4Gb (256M x 16)(NAND), 4G (128M x 32)(LPDDR2)
Parallel
533MHz
-
-
1.8V
-25°C ~ 85°C (TA)
-
-
-
hot MT29RZ4C4DZZMGGM-18W.80U
Micron Technology Inc.

IC FLASH RAM 4G PARALLEL 533MHZ

  • Memory Type: Non-Volatile
  • Memory Format: FLASH, RAM
  • Technology: FLASH - NAND, DRAM - LPDDR2
  • Memory Size: 4Gb (256M x 16)(NAND), 4G (128M x 32)(LPDDR2)
  • Memory Interface: Parallel
  • Clock Frequency: 533MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.8V
  • Operating Temperature: -25°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫28,800
FLASH, RAM
FLASH - NAND, DRAM - LPDDR2
4Gb (256M x 16)(NAND), 4G (128M x 32)(LPDDR2)
Parallel
533MHz
-
-
1.8V
-25°C ~ 85°C (TA)
-
-
-
MT29RZ4C4DZZMGGM-18W.80C
Micron Technology Inc.

IC FLASH RAM 4G PARALLEL 533MHZ

  • Memory Type: Non-Volatile
  • Memory Format: FLASH, RAM
  • Technology: FLASH - NAND, DRAM - LPDDR2
  • Memory Size: 4Gb (256M x 16)(NAND), 4G (128M x 32)(LPDDR2)
  • Memory Interface: Parallel
  • Clock Frequency: 533MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.8V
  • Operating Temperature: -25°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫6,576
FLASH, RAM
FLASH - NAND, DRAM - LPDDR2
4Gb (256M x 16)(NAND), 4G (128M x 32)(LPDDR2)
Parallel
533MHz
-
-
1.8V
-25°C ~ 85°C (TA)
-
-
-
MT29RZ4B4DZZMGWD-18I.80C
Micron Technology Inc.

IC FLASH RAM 4G PARALLEL 533MHZ

  • Memory Type: Non-Volatile
  • Memory Format: FLASH, RAM
  • Technology: FLASH - NAND, DRAM - LPDDR2
  • Memory Size: 4Gb (128M x 32)(NAND), 4G (128M x 32)(LPDDR2)
  • Memory Interface: Parallel
  • Clock Frequency: 533MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.8V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 162-VFBGA
  • Supplier Device Package: 162-VFBGA (10.5x8)
パッケージ: 162-VFBGA
在庫7,712
FLASH, RAM
FLASH - NAND, DRAM - LPDDR2
4Gb (128M x 32)(NAND), 4G (128M x 32)(LPDDR2)
Parallel
533MHz
-
-
1.8V
-40°C ~ 85°C (TA)
Surface Mount
162-VFBGA
162-VFBGA (10.5x8)
MT29RZ2B2DZZHHTB-18W.88F
Micron Technology Inc.

IC FLASH RAM 2G PARALLEL 533MHZ

  • Memory Type: Non-Volatile
  • Memory Format: FLASH, RAM
  • Technology: FLASH - NAND, DRAM - LPDDR2
  • Memory Size: 2Gb (256M x 8)(NAND), 2G (64M x 32)(LPDDR2)
  • Memory Interface: Parallel
  • Clock Frequency: 533MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.8V
  • Operating Temperature: -25°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫2,848
FLASH, RAM
FLASH - NAND, DRAM - LPDDR2
2Gb (256M x 8)(NAND), 2G (64M x 32)(LPDDR2)
Parallel
533MHz
-
-
1.8V
-25°C ~ 85°C (TA)
-
-
-
MT29RZ2B2DZZHHTB-18I.88F
Micron Technology Inc.

IC FLASH RAM 2G PARALLEL 533MHZ

  • Memory Type: Non-Volatile
  • Memory Format: FLASH, RAM
  • Technology: FLASH - NAND, DRAM - LPDDR2
  • Memory Size: 2Gb (256M x 8)(NAND), 2G (64M x 32)(LPDDR2)
  • Memory Interface: Parallel
  • Clock Frequency: 533MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.8V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫2,928
FLASH, RAM
FLASH - NAND, DRAM - LPDDR2
2Gb (256M x 8)(NAND), 2G (64M x 32)(LPDDR2)
Parallel
533MHz
-
-
1.8V
-40°C ~ 85°C (TA)
-
-
-
hot MT29RZ2B1DZZHGWD-18I.83G
Micron Technology Inc.

IC FLASH RAM 2G PARALLEL 533MHZ

  • Memory Type: Non-Volatile
  • Memory Format: FLASH, RAM
  • Technology: FLASH - NAND, DRAM - LPDDR2
  • Memory Size: 2Gb (256M x 8)(NAND), 1G (32M x 32)(LPDDR2)
  • Memory Interface: Parallel
  • Clock Frequency: 533MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.8V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 162-VFBGA
  • Supplier Device Package: 162-VFBGA (10.5x8)
パッケージ: 162-VFBGA
在庫5,024
FLASH, RAM
FLASH - NAND, DRAM - LPDDR2
2Gb (256M x 8)(NAND), 1G (32M x 32)(LPDDR2)
Parallel
533MHz
-
-
1.8V
-40°C ~ 85°C (TA)
Surface Mount
162-VFBGA
162-VFBGA (10.5x8)
MT29RZ1CVCZZHGTN-18 W.85H
Micron Technology Inc.

IC FLASH RAM 1G PARALLEL 533MHZ

  • Memory Type: Non-Volatile
  • Memory Format: FLASH, RAM
  • Technology: FLASH - NAND, DRAM - LPDDR2
  • Memory Size: 1Gb (128M x 8)(NAND), 512M (32M x 16)(LPDDR2)
  • Memory Interface: Parallel
  • Clock Frequency: 533MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.8V
  • Operating Temperature: -25°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫4,048
FLASH, RAM
FLASH - NAND, DRAM - LPDDR2
1Gb (128M x 8)(NAND), 512M (32M x 16)(LPDDR2)
Parallel
533MHz
-
-
1.8V
-25°C ~ 85°C (TA)
-
-
-
MT29RZ1CVCZZHGTN-18 I.85H
Micron Technology Inc.

IC FLASH RAM 1G PARALLEL 533MHZ

  • Memory Type: Non-Volatile
  • Memory Format: FLASH, RAM
  • Technology: FLASH - NAND, DRAM - LPDDR2
  • Memory Size: 1Gb (128M x 8)(NAND), 512M (32M x 16)(LPDDR2)
  • Memory Interface: Parallel
  • Clock Frequency: 533MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.8V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫4,928
FLASH, RAM
FLASH - NAND, DRAM - LPDDR2
1Gb (128M x 8)(NAND), 512M (32M x 16)(LPDDR2)
Parallel
533MHz
-
-
1.8V
-40°C ~ 85°C (TA)
Surface Mount
-
-
MT29RZ1C1CZZHGTN-18I.85G
Micron Technology Inc.

IC FLASH RAM 1G PARALLEL 533MHZ

  • Memory Type: Non-Volatile
  • Memory Format: FLASH, RAM
  • Technology: FLASH - NAND, DRAM - LPDDR2
  • Memory Size: 1Gb (128M x 8)(NAND), 512M (32M x 16)(LPDDR2)
  • Memory Interface: Parallel
  • Clock Frequency: 533MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.8V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫2,544
FLASH, RAM
FLASH - NAND, DRAM - LPDDR2
1Gb (128M x 8)(NAND), 512M (32M x 16)(LPDDR2)
Parallel
533MHz
-
-
1.8V
-40°C ~ 85°C (TA)
-
-
-
MT29PZZZ4D4BKEPK-18 W.94H
Micron Technology Inc.

SLC EMMC/LPDDR2 36G

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫2,096
-
-
-
-
-
-
-
-
-
Surface Mount
-
-
MT29F8G16ADBDAH4-AIT:D
Micron Technology Inc.

IC FLASH 8G PARALLEL FBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 8Gb (512M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 63-VFBGA
  • Supplier Device Package: 63-VFBGA (9x11)
パッケージ: 63-VFBGA
在庫4,752
FLASH
FLASH - NAND
8Gb (512M x 16)
Parallel
-
-
-
1.7 V ~ 1.95 V
-40°C ~ 85°C (TA)
Surface Mount
63-VFBGA
63-VFBGA (9x11)
hot MT29F8G08ABABAWP-AITX:B
Micron Technology Inc.

IC FLASH 8G PARALLEL TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 8Gb (1G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP
パッケージ: 48-TFSOP (0.724", 18.40mm Width)
在庫9,612
FLASH
FLASH - NAND
8Gb (1G x 8)
Parallel
-
-
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP
MT29F8G08ABABAWP-AATX:B
Micron Technology Inc.

IC FLASH 8G PARALLEL TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 8Gb (1G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP
パッケージ: 48-TFSOP (0.724", 18.40mm Width)
在庫4,160
FLASH
FLASH - NAND
8Gb (1G x 8)
Parallel
-
-
-
2.7 V ~ 3.6 V
-40°C ~ 105°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP
MT29F768G08EEHBBJ4-3R:B
Micron Technology Inc.

IC FLASH 768G PARALLEL 333MHZ

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 768Gb (96G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 333MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.5 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫3,904
FLASH
FLASH - NAND
768Gb (96G x 8)
Parallel
333MHz
-
-
2.5 V ~ 3.6 V
0°C ~ 70°C (TA)
-
-
-
MT29F6T08ETHBBM5-3R:B
Micron Technology Inc.

IC FLASH 6T PARALLEL 333MHZ

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 6Tb (768G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 333MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.5 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫7,680
FLASH
FLASH - NAND
6Tb (768G x 8)
Parallel
333MHz
-
-
2.5 V ~ 3.6 V
0°C ~ 70°C (TA)
-
-
-
MT29F64G08CBCGBWP-10M:G
Micron Technology Inc.

IC FLASH 64G PARALLEL 100MHZ

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 64Gb (8G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 100MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫5,456
FLASH
FLASH - NAND
64Gb (8G x 8)
Parallel
100MHz
-
-
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
-
-
-
MT29F64G08CBCGBJ4-5M:G
Micron Technology Inc.

IC FLASH 64G PARALLEL 200MHZ

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 64Gb (8G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫5,952
FLASH
FLASH - NAND
64Gb (8G x 8)
Parallel
200MHz
-
-
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
-
-
-
hot MT29F64G08CBCDBJ4-6R:D
Micron Technology Inc.

IC FLASH 64G PARALLEL 167MHZ

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 64Gb (8G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 167MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫5,280
FLASH
FLASH - NAND
64Gb (8G x 8)
Parallel
167MHz
-
-
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
-
-
-
MT29F64G08CBCBBH1-10X:B
Micron Technology Inc.

IC FLASH 64G PARALLEL 100MHZ

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 64Gb (8G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 100MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫4,592
FLASH
FLASH - NAND
64Gb (8G x 8)
Parallel
100MHz
-
-
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
-
-
-
hot MT29F64G08CBABAWP-M:B
Micron Technology Inc.

IC FLASH 64G PARALLEL TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 64Gb (8G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP
パッケージ: 48-TFSOP (0.724", 18.40mm Width)
在庫7,856
FLASH
FLASH - NAND
64Gb (8G x 8)
Parallel
-
-
-
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP
MT29F64G08ABCBBH6-6IT:B
Micron Technology Inc.

IC FLASH 64G PARALLEL 167MHZ

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 64Gb (8G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 167MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫2,496
FLASH
FLASH - NAND
64Gb (8G x 8)
Parallel
167MHz
-
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
-
-
-