Micron Technology Inc. 製品

M25P10-AVMP6G

Micron Technology Inc.

IC FLASH 1MBIT 50MHZ 8VFDFPN

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 1Mb (128K x 8)
• Memory Interface: SPI
• Clock Frequency: 50MHz
• Write Cycle Time - Word, Page: 15ms, 5ms
• Access Time: -
• Voltage - Supply: 2.3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-VDFN Exposed Pad
• Supplier Device Package: 8-VFQFPN (6x5)

パッケージ: 8-VDFN Exposed Pad

PC28F256G18FF TR

Micron Technology Inc.

IC FLASH 256MBIT 96NS 64EASYBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 256Mb (16M x 16)
• Memory Interface: Parallel
• Clock Frequency: 133MHz
• Write Cycle Time - Word, Page: 96ns
• Access Time: 96ns
• Voltage - Supply: 1.7 V ~ 2 V
• Operating Temperature: -30°C ~ 85°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 64-TBGA
• Supplier Device Package: 64-EasyBGA (8x10)

パッケージ: 64-TBGA

M25PX80-VMN3TPB TR

Micron Technology Inc.

IC FLASH 8MBIT 75MHZ 8SO

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 8Mb (1M x 8)
• Memory Interface: SPI
• Clock Frequency: 75MHz
• Write Cycle Time - Word, Page: 15ms, 5ms
• Access Time: -
• Voltage - Supply: 2.3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

パッケージ: 8-SOIC (0.154", 3.90mm Width)

MT66R7072A10ACUXZW.ZCA

Micron Technology Inc.

IC LPDDR2PCM/LPDDR2 1.5GBIT FBGA

• Memory Type: Non-Volatile
• Memory Format: RAM
• Technology: PCM - LPDDR2, MCP - LPDDR2
• Memory Size: 1Gb (128M x 8)(PCM), 512Mb (64M x 8)(MCP)
• Memory Interface: Parallel
• Clock Frequency: 166MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.14 V ~ 1.95 V
• Operating Temperature: -25°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 121-WFBGA
• Supplier Device Package: 121-VFBGA (8x8)

パッケージ: 121-WFBGA

MT29C8G96MAZAPDJA-5 IT

Micron Technology Inc.

IC FLASH/LPDRAM 12GBIT 200MHZ

• Memory Type: Non-Volatile
• Memory Format: FLASH, RAM
• Technology: FLASH - NAND, Mobile LPDRAM
• Memory Size: 8Gb (512M x 16)(NAND), 4Gb (128M x 32)(LPDRAM)
• Memory Interface: Parallel
• Clock Frequency: 200MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

MT29F16G08CBACAWP:C TR

Micron Technology Inc.

IC FLASH 16GBIT 48TSOP

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 16Gb (2G x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-TFSOP (0.724", 18.40mm Width)
• Supplier Device Package: 48-TSOP I

パッケージ: 48-TFSOP (0.724", 18.40mm Width)

MT29F4G16AACWC-ET:C TR

Micron Technology Inc.

IC FLASH 4GBIT 48TSOP

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 4Gb (256M x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-TSOP
• Supplier Device Package: 48-TSOP

パッケージ: 48-TSOP

MT28F640J3RG-115 MET

Micron Technology Inc.

IC FLASH 64MBIT 115NS 56TSOP

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH
• Memory Size: 64Mb (8M x 8, 4M x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: 115ns
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 56-TFSOP (0.724", 18.40mm Width)
• Supplier Device Package: 56-TSOP I

パッケージ: 56-TFSOP (0.724", 18.40mm Width)

MT29E1HT08ELHBBG1-3ES:B TR

Micron Technology Inc.

IC FLASH 1.5TBIT 272VBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 1.5Tb (192G x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.5 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

MT29F256G08CMCABH2-12ITZ:A TR

Micron Technology Inc.

IC FLASH 256GBIT 83MHZ 100TBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 256Gb (32G x 8)
• Memory Interface: Parallel
• Clock Frequency: 83MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

MT40A512M16HA-083E IT:A TR

Micron Technology Inc.

IC SDRAM 8GBIT 1.2GHZ 96BGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR4
• Memory Size: 8Gb (512M x 16)
• Memory Interface: Parallel
• Clock Frequency: 1.2GHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.14 V ~ 1.26 V
• Operating Temperature: -40°C ~ 95°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 96-TFBGA
• Supplier Device Package: 96-FBGA (14x9)

パッケージ: 96-TFBGA

MT25QU256ABA8E12-1SIT

Micron Technology Inc.

IC FLASH 256MBIT 108MHZ 24TBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 256Mb (32M x 8)
• Memory Interface: SPI
• Clock Frequency: 133MHz
• Write Cycle Time - Word, Page: 8ms, 2.8ms
• Access Time: -
• Voltage - Supply: 1.7 V ~ 2 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-TBGA
• Supplier Device Package: 24-T-PBGA (6x8)

パッケージ: 24-TBGA

MT29F1G08ABAEAH4:E TR

Micron Technology Inc.

IC FLASH 1GBIT 20NS 63VFBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 1Gb (128M x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 63-VFBGA
• Supplier Device Package: 63-VFBGA (9x11)

パッケージ: 63-VFBGA

MT29F4G01ADAGDWB-IT:G TR

Micron Technology Inc.

IC FLASH 4GBIT 8UDFN

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 4Gb (4G x 1)
• Memory Interface: SPI
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-UDFN
• Supplier Device Package: 8-U-PDFN (8x6)

パッケージ: 8-UDFN

MT29F2G16ABBEAHC-IT:E TR

Micron Technology Inc.

IC FLASH 2GBIT 63VFBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 2Gb (128M x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 63-VFBGA
• Supplier Device Package: 63-VFBGA (10.5x13)

パッケージ: 63-VFBGA

MT53D4DASB-DC TR

Micron Technology Inc.

SPECIAL/CUSTOM LPDDR4

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

MT25QL128ABB1EW7-CSIT TR

Micron Technology Inc.

IC FLASH 128M SPI 133MHZ 8WPDFN

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 128Mb (16M x 8)
• Memory Interface: SPI
• Clock Frequency: 133MHz
• Write Cycle Time - Word, Page: 8ms, 2.8ms
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-WDFN Exposed Pad
• Supplier Device Package: 8-WPDFN (6x5)(MLP8)

パッケージ: 8-WDFN Exposed Pad

MT35XU256ABA2G12-0AAT TR

Micron Technology Inc.

SPI FLASH NOR SLC 32MX8 TBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH
• Memory Size: 256Mb (32M x 8)
• Memory Interface: Xccela Bus
• Clock Frequency: 200MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.7 V ~ 2 V
• Operating Temperature: -40°C ~ 105°C
• Mounting Type: Surface Mount
• Package / Case: 24-TBGA
• Supplier Device Package: 24-TPBGA

パッケージ: 24-TBGA

MT53B512M64D4PV-062 WT:C

Micron Technology Inc.

IC DRAM 32G 1600MHZ FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR4
• Memory Size: 32Gb (512M x 64)
• Memory Interface: -
• Clock Frequency: 1600MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.1V
• Operating Temperature: -30°C ~ 85°C (TC)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

MT46H32M16LFBF-6 AAT:C

Micron Technology Inc.

IC DRAM 512M PARALLEL 166MHZ

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR
• Memory Size: 512Mb (32M x 16)
• Memory Interface: Parallel
• Clock Frequency: 166MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 5.0ns
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

MT29TZZZ5D6DKFRL-093 W.9A6 TR

Micron Technology Inc.

IC FLASH MEM 6G LPDDR2 MLC

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

MT53E384M32D2DS-046 AUT:E

Micron Technology Inc.

IC DRAM LPDDR4 FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR4
• Memory Size: 12Gb (384M x 32)
• Memory Interface: -
• Clock Frequency: 2.133GHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 0.6V, 1.1V
• Operating Temperature: -40°C ~ 125°C (TC)
• Mounting Type: Surface Mount
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

MTFC4GLWDM-4M AAT Z

Micron Technology Inc.

MODULE EMMC 4GB 100LBGA

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

MT29F2G08ABAGAH4-AATES:G TR

Micron Technology Inc.

IC FLASH 2G PARALLEL 63VFBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND (SLC)
• Memory Size: 2Gb (256M x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7V ~ 3.6V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 63-VFBGA
• Supplier Device Package: 63-VFBGA (9x11)

パッケージ: 63-VFBGA

MT62F768M32D2DS-023-WT-B-TR

Micron Technology Inc.

LPDDR5 24GBIT 32 315/315 TFBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR5X
• Memory Size: 24Gbit
• Memory Interface: LVSTL
• Clock Frequency: 4.266 GHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.01V ~ 1.12V
• Operating Temperature: -25°C ~ 85°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 315-TFBGA
• Supplier Device Package: 315-TFBGA (12.4x15)

パッケージ: -

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MT53E768M64D4HJ-046-AAT-A

Micron Technology Inc.

IC DRAM

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR4
• Memory Size: 48Gbit
• Memory Interface: Parallel
• Clock Frequency: 2.133 GHz
• Write Cycle Time - Word, Page: 18ns
• Access Time: 3.5 ns
• Voltage - Supply: 1.06V ~ 1.17V
• Operating Temperature: -40°C ~ 105°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 556-TFBGA
• Supplier Device Package: 556-WFBGA (12.4x12.4)

パッケージ: -

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MT58L128L32F1F-10

Micron Technology Inc.

IC SRAM 4MBIT PARALLEL 165FBGA

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Synchronous
• Memory Size: 4Mbit
• Memory Interface: Parallel
• Clock Frequency: 66 MHz
• Write Cycle Time - Word, Page: -
• Access Time: 10 ns
• Voltage - Supply: 3.135V ~ 3.6V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 165-TBGA
• Supplier Device Package: 165-FBGA (13x15)

パッケージ: -

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MT58L64L18PT-10

Micron Technology Inc.

IC SRAM 1MBIT PAR 100TQFP

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Standard
• Memory Size: 1Mbit
• Memory Interface: Parallel
• Clock Frequency: 100 MHz
• Write Cycle Time - Word, Page: -
• Access Time: 5 ns
• Voltage - Supply: 3.135V ~ 3.6V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-TQFP (14x20.1)

パッケージ: -

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MT53D1024M32D4DT-053-AIT-ES-D-TR

Micron Technology Inc.

IC DRAM 32GBIT 1.866GHZ 200VFBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR4
• Memory Size: 32Gbit
• Memory Interface: -
• Clock Frequency: 1.866 GHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.1V
• Operating Temperature: -40°C ~ 95°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 200-VFBGA
• Supplier Device Package: 200-VFBGA (10x14.5)

パッケージ: -

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MT58L256L36PS-7-5TR

Micron Technology Inc.

IC SRAM 8MBIT PARALLEL 100TQFP

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Standard
• Memory Size: 8Mbit
• Memory Interface: Parallel
• Clock Frequency: 133 MHz
• Write Cycle Time - Word, Page: -
• Access Time: 4 ns
• Voltage - Supply: 3.135V ~ 3.6V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-TQFP (14x20.1)

パッケージ: -

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