ページ 216 - Micron Technology Inc. 製品

部品番号	メーカ	説明	パッケージ	在庫
N25Q064A13ESE4MF TR	Micron Technology Inc.	IC FLASH NOR 16MX4 SOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (16M x 4) Memory Interface: SPI Clock Frequency: 108MHz Write Cycle Time - Word, Page: 8ms, 5ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫6,144
MT29F128G08AMCDBL1-6:D TR	Micron Technology Inc.	IC FLASH 128GBIT 167MHZ VLGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 128Gb (16G x 8) Memory Interface: Parallel Clock Frequency: 167MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫5,920
MT29F1T08CUCABH8-6:A TR	Micron Technology Inc.	IC FLASH 1TBIT 167MHZ 152LBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 1Tb (128G x 8) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫3,424
MTFC4GLGDQ-AIT	Micron Technology Inc.	IC FLASH 32GBIT 100LBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 32Gb (4G x 8) Memory Interface: MMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫4,016
MT29RZ4B4DZZHGPL-18 W.80U TR	Micron Technology Inc.	IC FLASH 8G DDR Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫5,344
PC48F4400P0TB0E3	Micron Technology Inc.	IC FLASH 512MBIT 95NS 64EASYBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mb (32M x 16) Memory Interface: Parallel Clock Frequency: 52MHz Write Cycle Time - Word, Page: 95ns Access Time: 95ns Voltage - Supply: 2.3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 64-TBGA Supplier Device Package: 64-EasyBGA (10x13)	パッケージ: 64-TBGA	在庫6,736
MT48LC8M32B2TG-6 TR	Micron Technology Inc.	IC SDRAM 256MBIT 166MHZ 86TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 256Mb (8M x 32) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: 12ns Access Time: 5.5ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 86-TFSOP (0.400", 10.16mm Width) Supplier Device Package: 86-TSOP II	パッケージ: 86-TFSOP (0.400", 10.16mm Width)	在庫3,584
MT46V32M16TG-75E:C TR	Micron Technology Inc.	IC SDRAM 512MBIT 133MHZ 66TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 512Mb (32M x 16) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: 15ns Access Time: 750ps Voltage - Supply: 2.3 V ~ 2.7 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 66-TSSOP (0.400", 10.16mm Width) Supplier Device Package: 66-TSOP	パッケージ: 66-TSSOP (0.400", 10.16mm Width)	在庫2,320
MT29F512G08CFCBBWP-10ES:B TR	Micron Technology Inc.	IC FLASH 512GBIT 100MHZ 48TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 512Gb (64G x 8) Memory Interface: Parallel Clock Frequency: 100MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫5,216
MT29F128G08CBCCBH6-6R:C	Micron Technology Inc.	IC FLASH 128GBIT 152VBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 128Gb (16G x 8) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫5,376
MT25TU01GHBB8E12-0SIT TR	Micron Technology Inc.	SERIAL NOR SLC 128MX8 TBGA DDP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫7,456
MT29F8G16ADBDAH4-IT:D TR	Micron Technology Inc.	IC FLASH 8GBIT 63VFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 8Gb (512M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 63-VFBGA Supplier Device Package: 63-VFBGA (9x11)	パッケージ: 63-VFBGA	在庫4,816
JS28F256M29EWLA	Micron Technology Inc.	IC FLASH 256MBIT 110NS 56TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mb (32M x 8, 16M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 110ns Access Time: 110ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 56-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 56-TSOP (14x20)	パッケージ: 56-TFSOP (0.724", 18.40mm Width)	在庫14,688
MT47H64M8SH-25E:H	Micron Technology Inc.	IC SDRAM 512MBIT 400MHZ 60FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 512Mb (64M x 8) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: 15ns Access Time: 400ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-FBGA (8x10)	パッケージ: 60-TFBGA	在庫17,940
MT29F256G08CBCBBJ4-5M:B	Micron Technology Inc.	IC FLASH Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫9,072
MT53D256M64D4NY-046 XT ES:B TR	Micron Technology Inc.	IC DRAM 16G 2133MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 16Gb (256M x 64) Memory Interface: - Clock Frequency: 2133MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 105°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫3,664
MTFC128GAPALNS-AAT TR	Micron Technology Inc.	IC FLASH 1T MMC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 1Tb (128G x 8) Memory Interface: MMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫2,768
MT53B256M64D2NK-053 WT ES:C	Micron Technology Inc.	IC DRAM 16G 1866MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 16Gb (256M x 64) Memory Interface: - Clock Frequency: 1866MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫7,856
MT41K256M16TW-125:P	Micron Technology Inc.	IC DRAM 4G PARALLEL 800MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 4Gb (256M x 16) Memory Interface: Parallel Clock Frequency: 800MHz Write Cycle Time - Word, Page: - Access Time: 20ns Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫3,328
MTFC64GAJAEDQ-AAT TR	Micron Technology Inc.	IC FLASH 512G MMC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 512Gb (64G x 8) Memory Interface: MMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫4,944
MT53D512M32D2NP-046 AUT:D TR	Micron Technology Inc.	IC DRAM 16G 2133MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 16Gb (512M x 32) Memory Interface: - Clock Frequency: 2133MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -40°C ~ 125°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫2,656
MT53E384M32D2DS-046 AAT:E TR	Micron Technology Inc.	IC DRAM LPDDR4 FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 12Gb (384M x 32) Memory Interface: - Clock Frequency: 2.133GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 0.6V, 1.1V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: - Supplier Device Package: -	パッケージ: -	在庫6,112
MT29F4G08ABBFAH4-AITES:F	Micron Technology Inc.	IC FLASH NAND 4G PAR 63VFBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫4,688
MT29F4G08ABBFAM70A3WC1	Micron Technology Inc.	IC FLASH SLC 4G DIE 512MX8 Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 4Gb (512M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7V ~ 1.95V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Wafer	パッケージ: Die	在庫6,272
MT53E1G64D4HJ-046-AUT-C-TR	Micron Technology Inc.	LPDDR4 64G 1GX64 FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4X Memory Size: 64Gbit Memory Interface: Parallel Clock Frequency: 2.133 GHz Write Cycle Time - Word, Page: 18ns Access Time: 3.5 ns Voltage - Supply: 1.06V ~ 1.17V Operating Temperature: -40°C ~ 125°C (TC) Mounting Type: Surface Mount Package / Case: 556-TFBGA Supplier Device Package: 556-WFBGA (12.4x12.4)	パッケージ: -	Request a Quote
MT60B2G8HB-52B-IT-G	Micron Technology Inc.	DDR5 16G 2GX8 FBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote
MT62F1G32D2DS-023-WT-B-TR	Micron Technology Inc.	LPDDR5 32G 1GX32 FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR5 Memory Size: 32Gbit Memory Interface: Parallel Clock Frequency: 3.2 GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.05V Operating Temperature: -25°C ~ 85°C Mounting Type: Surface Mount Package / Case: 200-WFBGA Supplier Device Package: 200-WFBGA (10x14.5)	パッケージ: -	Request a Quote
MT29F4T08GMLCEJ4-QA-C-TR	Micron Technology Inc.	QLC 4T 512GX8 VBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote
MT53E4D1BDE-DC-TR	Micron Technology Inc.	SPECIAL/CUSTOM LPDDR4 Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote
MTFC256GBEAXHF-WT-TR	Micron Technology Inc.	UFS 2T Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 2Tbit Memory Interface: UFS 4.0 Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -25°C ~ 85°C Mounting Type: Surface Mount Package / Case: 153-WFBGA Supplier Device Package: 153-WFBGA (11x13)	パッケージ: -	Request a Quote

N25Q064A13ESE4MF TR

Micron Technology Inc.

IC FLASH NOR 16MX4 SOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (16M x 4)
Memory Interface: SPI
Clock Frequency: 108MHz
Write Cycle Time - Word, Page: 8ms, 5ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫6,144

MT29F128G08AMCDBL1-6:D TR

Micron Technology Inc.

IC FLASH 128GBIT 167MHZ VLGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 128Gb (16G x 8)
Memory Interface: Parallel
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫5,920

MT29F1T08CUCABH8-6:A TR

Micron Technology Inc.

IC FLASH 1TBIT 167MHZ 152LBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 1Tb (128G x 8)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫3,424

MTFC4GLGDQ-AIT

Micron Technology Inc.

IC FLASH 32GBIT 100LBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 32Gb (4G x 8)
Memory Interface: MMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫4,016

MT29RZ4B4DZZHGPL-18 W.80U TR

Micron Technology Inc.

IC FLASH 8G DDR

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫5,344

PC48F4400P0TB0E3

Micron Technology Inc.

IC FLASH 512MBIT 95NS 64EASYBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mb (32M x 16)
Memory Interface: Parallel
Clock Frequency: 52MHz
Write Cycle Time - Word, Page: 95ns
Access Time: 95ns
Voltage - Supply: 2.3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 64-TBGA
Supplier Device Package: 64-EasyBGA (10x13)

パッケージ: 64-TBGA

在庫6,736

MT48LC8M32B2TG-6 TR

Micron Technology Inc.

IC SDRAM 256MBIT 166MHZ 86TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 256Mb (8M x 32)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 12ns
Access Time: 5.5ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 86-TFSOP (0.400", 10.16mm Width)
Supplier Device Package: 86-TSOP II

パッケージ: 86-TFSOP (0.400", 10.16mm Width)

在庫3,584

MT46V32M16TG-75E:C TR

Micron Technology Inc.

IC SDRAM 512MBIT 133MHZ 66TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 512Mb (32M x 16)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 750ps
Voltage - Supply: 2.3 V ~ 2.7 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Supplier Device Package: 66-TSOP

パッケージ: 66-TSSOP (0.400", 10.16mm Width)

在庫2,320

MT29F512G08CFCBBWP-10ES:B TR

Micron Technology Inc.

IC FLASH 512GBIT 100MHZ 48TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 512Gb (64G x 8)
Memory Interface: Parallel
Clock Frequency: 100MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫5,216

MT29F128G08CBCCBH6-6R:C

Micron Technology Inc.

IC FLASH 128GBIT 152VBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 128Gb (16G x 8)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫5,376

MT25TU01GHBB8E12-0SIT TR

Micron Technology Inc.

SERIAL NOR SLC 128MX8 TBGA DDP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫7,456

MT29F8G16ADBDAH4-IT:D TR

Micron Technology Inc.

IC FLASH 8GBIT 63VFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 8Gb (512M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Supplier Device Package: 63-VFBGA (9x11)

パッケージ: 63-VFBGA

在庫4,816

JS28F256M29EWLA

Micron Technology Inc.

IC FLASH 256MBIT 110NS 56TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mb (32M x 8, 16M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 110ns
Access Time: 110ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 56-TSOP (14x20)

パッケージ: 56-TFSOP (0.724", 18.40mm Width)

在庫14,688

MT47H64M8SH-25E:H

Micron Technology Inc.

IC SDRAM 512MBIT 400MHZ 60FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 512Mb (64M x 8)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 400ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-FBGA (8x10)

パッケージ: 60-TFBGA

在庫17,940

MT29F256G08CBCBBJ4-5M:B

Micron Technology Inc.

IC FLASH

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫9,072

MT53D256M64D4NY-046 XT ES:B TR

Micron Technology Inc.

IC DRAM 16G 2133MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 16Gb (256M x 64)
Memory Interface: -
Clock Frequency: 2133MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 105°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫3,664

MTFC128GAPALNS-AAT TR

Micron Technology Inc.

IC FLASH 1T MMC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 1Tb (128G x 8)
Memory Interface: MMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫2,768

MT53B256M64D2NK-053 WT ES:C

Micron Technology Inc.

IC DRAM 16G 1866MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 16Gb (256M x 64)
Memory Interface: -
Clock Frequency: 1866MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫7,856

MT41K256M16TW-125:P

Micron Technology Inc.

IC DRAM 4G PARALLEL 800MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 4Gb (256M x 16)
Memory Interface: Parallel
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: -
Access Time: 20ns
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫3,328

MTFC64GAJAEDQ-AAT TR

Micron Technology Inc.

IC FLASH 512G MMC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 512Gb (64G x 8)
Memory Interface: MMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫4,944

MT53D512M32D2NP-046 AUT:D TR

Micron Technology Inc.

IC DRAM 16G 2133MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 16Gb (512M x 32)
Memory Interface: -
Clock Frequency: 2133MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -40°C ~ 125°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫2,656

MT53E384M32D2DS-046 AAT:E TR

Micron Technology Inc.

IC DRAM LPDDR4 FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 12Gb (384M x 32)
Memory Interface: -
Clock Frequency: 2.133GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 0.6V, 1.1V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫6,112

MT29F4G08ABBFAH4-AITES:F

Micron Technology Inc.

IC FLASH NAND 4G PAR 63VFBGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫4,688

MT29F4G08ABBFAM70A3WC1

Micron Technology Inc.

IC FLASH SLC 4G DIE 512MX8

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 4Gb (512M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Wafer

パッケージ: Die

在庫6,272

MT53E1G64D4HJ-046-AUT-C-TR

Micron Technology Inc.

LPDDR4 64G 1GX64 FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4X
Memory Size: 64Gbit
Memory Interface: Parallel
Clock Frequency: 2.133 GHz
Write Cycle Time - Word, Page: 18ns
Access Time: 3.5 ns
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -40°C ~ 125°C (TC)
Mounting Type: Surface Mount
Package / Case: 556-TFBGA
Supplier Device Package: 556-WFBGA (12.4x12.4)

パッケージ: -

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MT60B2G8HB-52B-IT-G

Micron Technology Inc.

DDR5 16G 2GX8 FBGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

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MT62F1G32D2DS-023-WT-B-TR

Micron Technology Inc.

LPDDR5 32G 1GX32 FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR5
Memory Size: 32Gbit
Memory Interface: Parallel
Clock Frequency: 3.2 GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.05V
Operating Temperature: -25°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 200-WFBGA
Supplier Device Package: 200-WFBGA (10x14.5)

パッケージ: -

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MT29F4T08GMLCEJ4-QA-C-TR

Micron Technology Inc.

QLC 4T 512GX8 VBGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

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MT53E4D1BDE-DC-TR

Micron Technology Inc.

SPECIAL/CUSTOM LPDDR4

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

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MTFC256GBEAXHF-WT-TR

Micron Technology Inc.

UFS 2T

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 2Tbit
Memory Interface: UFS 4.0
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -25°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 153-WFBGA
Supplier Device Package: 153-WFBGA (11x13)

パッケージ: -

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