Micron Technology Inc. 製品

MT29F512G08EMCBBJ5-6:B

Micron Technology Inc.

IC FLASH 512GBIT 167MHZ 132TBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 512Gb (64G x 8)
• Memory Interface: Parallel
• Clock Frequency: 167MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

N25Q064A13EW9D0E

Micron Technology Inc.

IC FLASH 64MBIT 108MHZ 8WPDFN

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 64Mb (16M x 4)
• Memory Interface: SPI
• Clock Frequency: 108MHz
• Write Cycle Time - Word, Page: 8ms, 5ms
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-WDFN Exposed Pad
• Supplier Device Package: 8-WPDFN (6x5)(MLP8)

パッケージ: 8-WDFN Exposed Pad

MT46H64M32LFCX-5 WT:B TR

Micron Technology Inc.

IC SDRAM 2GBIT 200MHZ 90VFBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR
• Memory Size: 2Gb (64M x 32)
• Memory Interface: Parallel
• Clock Frequency: 200MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 5.0ns
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -25°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 90-VFBGA
• Supplier Device Package: 90-VFBGA (9x13)

パッケージ: 90-VFBGA

MT29C1G12MAAJYAMD-5 IT TR

Micron Technology Inc.

IC FLASH/LPDRAM 1.5GBIT 130VFBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH, RAM
• Technology: FLASH - NAND, Mobile LPDRAM
• Memory Size: 1Gb (128M x 8)(NAND), 512Mb (16M x 32)(LPDRAM)
• Memory Interface: Parallel
• Clock Frequency: 200MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 130-VFBGA
• Supplier Device Package: 130-VFBGA (8x9)

パッケージ: 130-VFBGA

MT41K256M4JP-15E:G

Micron Technology Inc.

IC SDRAM 1GBIT 667MHZ 78FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR3
• Memory Size: 1Gb (256M x 4)
• Memory Interface: Parallel
• Clock Frequency: 667MHz
• Write Cycle Time - Word, Page: -
• Access Time: 13.5ns
• Voltage - Supply: 1.283 V ~ 1.45 V
• Operating Temperature: 0°C ~ 95°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 78-TFBGA
• Supplier Device Package: 78-FBGA (8x11.5)

パッケージ: 78-TFBGA

M29W256GL70ZS6F TR

Micron Technology Inc.

IC FLASH 256MBIT 70NS 64FBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 256Mb (32M x 8, 16M x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 70ns
• Access Time: 70ns
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-LBGA
• Supplier Device Package: 64-FBGA (11x13)

パッケージ: 64-LBGA

MT48H16M32LFCM-6 IT:B

Micron Technology Inc.

IC SDRAM 512MBIT 167MHZ 90VFBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPSDR
• Memory Size: 512Mb (16M x 32)
• Memory Interface: Parallel
• Clock Frequency: 166MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 5ns
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 90-VFBGA
• Supplier Device Package: 90-VFBGA (10x13)

パッケージ: 90-VFBGA

MT48LC16M16A2P-7E IT:D

Micron Technology Inc.

IC SDRAM 256MBIT 133MHZ 54TSOP

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM
• Memory Size: 256Mb (16M x 16)
• Memory Interface: Parallel
• Clock Frequency: 133MHz
• Write Cycle Time - Word, Page: 14ns
• Access Time: 5.4ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 54-TSOP (0.400", 10.16mm Width)
• Supplier Device Package: 54-TSOP II

パッケージ: 54-TSOP (0.400", 10.16mm Width)

MT46V16M16TG-5G:F TR

Micron Technology Inc.

IC SDRAM 256MBIT 200MHZ 66TSOP

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR
• Memory Size: 256Mb (16M x 16)
• Memory Interface: Parallel
• Clock Frequency: 200MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 700ps
• Voltage - Supply: 2.5 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 66-TSSOP (0.400", 10.16mm Width)
• Supplier Device Package: 66-TSOP

パッケージ: 66-TSSOP (0.400", 10.16mm Width)

MT48LC128M4A2P-75:C TR

Micron Technology Inc.

IC SDRAM 512MBIT 133MHZ 54TSOP

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM
• Memory Size: 512Mb (128M x 4)
• Memory Interface: Parallel
• Clock Frequency: 133MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 5.4ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 54-TSOP (0.400", 10.16mm Width)
• Supplier Device Package: 54-TSOP II

パッケージ: 54-TSOP (0.400", 10.16mm Width)

MT53B384M64D4TZ-053 WT ES:C TR

Micron Technology Inc.

IC SDRAM 24GBIT 1.8GHZ FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR4
• Memory Size: 24Gb (384M x 64)
• Memory Interface: -
• Clock Frequency: 1866MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.1V
• Operating Temperature: -30°C ~ 85°C (TC)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

EDF8132A3PB-GD-F-R TR

Micron Technology Inc.

IC SDRAM 8GBIT 800MHZ 216FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR3
• Memory Size: 8Gb (256M x 32)
• Memory Interface: Parallel
• Clock Frequency: 800MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.14 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C (TC)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

EDB1332BDBH-1DAUT-F-D

Micron Technology Inc.

IC SDRAM 1GBIT 533MHZ 134FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR2
• Memory Size: 1Gb (32M x 32)
• Memory Interface: Parallel
• Clock Frequency: 533MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.14 V ~ 1.95 V
• Operating Temperature: -40°C ~ 125°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 134-VFBGA
• Supplier Device Package: 134-VFBGA (10x11.5)

パッケージ: 134-VFBGA

MT47H128M8SH-25E AIT:M

Micron Technology Inc.

IC SDRAM 1GBIT 400MHZ 60FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR2
• Memory Size: 1Gb (128M x 8)
• Memory Interface: Parallel
• Clock Frequency: 400MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 400ps
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: -40°C ~ 95°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 60-TFBGA
• Supplier Device Package: 60-FBGA (8x10)

パッケージ: 60-TFBGA

MT29F2G08ABAEAH4-AITX:E TR

Micron Technology Inc.

IC FLASH 2GBIT 63VFBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 2Gb (256M x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

MT29F1G08ABBDAH4-IT:D TR

Micron Technology Inc.

IC FLASH 1GBIT 25NS 63VFBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 1Gb (128M x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 63-VFBGA
• Supplier Device Package: 63-VFBGA (9x11)

パッケージ: 63-VFBGA

MT48LC2M32B2P-6A:J TR

Micron Technology Inc.

IC SDRAM 64MBIT 167MHZ 86TSOP

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM
• Memory Size: 64Mb (2M x 32)
• Memory Interface: Parallel
• Clock Frequency: 167MHz
• Write Cycle Time - Word, Page: 12ns
• Access Time: 5.4ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 86-TFSOP (0.400", 10.16mm Width)
• Supplier Device Package: 86-TSOP II

パッケージ: 86-TFSOP (0.400", 10.16mm Width)

MT53B256M32D1DS-062 XT:C

Micron Technology Inc.

IC DRAM 8G 1600MHZ

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR4
• Memory Size: 8Gb (256M x 32)
• Memory Interface: -
• Clock Frequency: 1600MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.1V
• Operating Temperature: -30°C ~ 105°C (TC)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

MT53E512M64D4NW-053 WT:E TR

Micron Technology Inc.

LPDDR4 32G 512MX64 FBGA WT QDP

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

MT38W1011A90YZQXZI.XB8

Micron Technology Inc.

PARALLEL/PSRAM 48M

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

MT29F2G08ABAEAWP-AITX:E

Micron Technology Inc.

IC FLASH 2G PARALLEL TSOP

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 2Gb (256M x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-TFSOP (0.724", 18.40mm Width)
• Supplier Device Package: 48-TSOP

パッケージ: 48-TFSOP (0.724", 18.40mm Width)

MT53E256M32D2DS-053 AUT:B

Micron Technology Inc.

IC DRAM LPDDR4 WFBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR4
• Memory Size: 8Gb (256M x 32)
• Memory Interface: -
• Clock Frequency: 1.866GHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 0.6V, 1.1V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

MT62F1G128DAWA-031-XT-B

Micron Technology Inc.

LPDDR5 128G 1GX128 FBGA 16DP

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

Request a Quote

MT62F4DCWT-DC-TR

Micron Technology Inc.

LPDDR5 Y4BM

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

Request a Quote

MT62F1G64D4EK-023-WT-C-TR

Micron Technology Inc.

LPDDR5 64GBIT 64 441/441 TFBGA 4

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR5
• Memory Size: 64Gbit
• Memory Interface: Parallel
• Clock Frequency: 2.133 GHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.05V
• Operating Temperature: -25°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 441-TFBGA
• Supplier Device Package: 441-TFBGA (14x14)

パッケージ: -

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MTFC8GAMALGT-AAT

Micron Technology Inc.

IC FLASH 64GBIT MMC

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 64Gbit
• Memory Interface: MMC
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

Request a Quote

MT53E1G32D2FW-046-AIT-B-TR

Micron Technology Inc.

LPDDR4 32G 1GX32 FBGA DDP

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR4X
• Memory Size: 32Gbit
• Memory Interface: Parallel
• Clock Frequency: 2.133 GHz
• Write Cycle Time - Word, Page: 18ns
• Access Time: 3.5 ns
• Voltage - Supply: 1.06V ~ 1.17V
• Operating Temperature: -40°C ~ 95°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 200-TFBGA
• Supplier Device Package: 200-TFBGA (10x14.5)

パッケージ: -

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MT53E384M32D2FW-046-AIT-E

Micron Technology Inc.

LPDDR4 12G 384MX32 FBGA DDP

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

Request a Quote