ページ 6 - Microsemi Corporation 製品 - ダイオード - 整流器 - アレイ | Heisener Electronics
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Microsemi Corporation 製品 - ダイオード - 整流器 - アレイ

レコード 465
ページ  6/16
画像
部品番号
メーカ
説明
パッケージ
在庫
数量
Diode Type
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io) (per Diode)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Operating Temperature - Junction
Mounting Type
Package / Case
Supplier Device Package
APTDF400AK170G
Microsemi Corporation

DIODE MODULE 1.7KV 480A SP6

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1700V
  • Current - Average Rectified (Io) (per Diode): 480A
  • Voltage - Forward (Vf) (Max) @ If: 2.5V @ 400A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 572ns
  • Current - Reverse Leakage @ Vr: 750µA @ 1700V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: LP4
  • Supplier Device Package: SP6
パッケージ: LP4
在庫4,912
Standard
1700V
480A
2.5V @ 400A
Standard Recovery >500ns, > 200mA (Io)
572ns
750µA @ 1700V
-
Chassis Mount
LP4
SP6
APTDF400AA170G
Microsemi Corporation

DIODE MODULE 1.7KV 480A SP6

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1700V
  • Current - Average Rectified (Io) (per Diode): 480A
  • Voltage - Forward (Vf) (Max) @ If: 2.5V @ 400A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 572ns
  • Current - Reverse Leakage @ Vr: 750µA @ 1700V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: LP4
  • Supplier Device Package: SP6
パッケージ: LP4
在庫5,312
Standard
1700V
480A
2.5V @ 400A
Standard Recovery >500ns, > 200mA (Io)
572ns
750µA @ 1700V
-
Chassis Mount
LP4
SP6
APT2X40DC120J
Microsemi Corporation

DIODE MODULE 1.2KV 40A SOT227

  • Diode Configuration: 2 Independent
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io) (per Diode): 40A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 40A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 800µA @ 1200V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
パッケージ: SOT-227-4, miniBLOC
在庫7,024
Silicon Carbide Schottky
1200V
40A
1.8V @ 40A
No Recovery Time > 500mA (Io)
0ns
800µA @ 1200V
-
Chassis Mount
SOT-227-4, miniBLOC
SOT-227
APT2X41DC120J
Microsemi Corporation

DIODE MODULE 1.2KV 40A SOT227

  • Diode Configuration: 2 Independent
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io) (per Diode): 40A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 40A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 800µA @ 1200V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: ISOTOP
  • Supplier Device Package: SOT-227
パッケージ: ISOTOP
在庫2,320
Silicon Carbide Schottky
1200V
40A
1.8V @ 40A
No Recovery Time > 500mA (Io)
0ns
800µA @ 1200V
-
Chassis Mount
ISOTOP
SOT-227
APT2X41DC60J
Microsemi Corporation

DIODE MODULE 600V 40A SOT227

  • Diode Configuration: 2 Independent
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io) (per Diode): 40A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 40A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 800µA @ 600V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: ISOTOP
  • Supplier Device Package: SOT-227
パッケージ: ISOTOP
在庫3,088
Silicon Carbide Schottky
600V
40A
1.8V @ 40A
No Recovery Time > 500mA (Io)
0ns
800µA @ 600V
-
Chassis Mount
ISOTOP
SOT-227
hot APTDF400AA120G
Microsemi Corporation

DIODE MODULE 1.2KV 470A SP6

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io) (per Diode): 470A
  • Voltage - Forward (Vf) (Max) @ If: 3V @ 400A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 385ns
  • Current - Reverse Leakage @ Vr: 250µA @ 1200V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: LP4
  • Supplier Device Package: SP6
パッケージ: LP4
在庫6,464
Standard
1200V
470A
3V @ 400A
Fast Recovery =< 500ns, > 200mA (Io)
385ns
250µA @ 1200V
-
Chassis Mount
LP4
SP6
APT2X60DC60J
Microsemi Corporation

DIODE MODULE 600V 60A SOT227

  • Diode Configuration: 2 Independent
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io) (per Diode): 60A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 60A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 1.2mA @ 600V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
パッケージ: SOT-227-4, miniBLOC
在庫7,872
Silicon Carbide Schottky
600V
60A
1.8V @ 60A
No Recovery Time > 500mA (Io)
0ns
1.2mA @ 600V
-
Chassis Mount
SOT-227-4, miniBLOC
SOT-227
APT2X61DC60J
Microsemi Corporation

DIODE MODULE 600V 60A ISOTOP

  • Diode Configuration: 2 Independent
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io) (per Diode): 60A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 60A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 1.2mA @ 600V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: ISOTOP?
パッケージ: SOT-227-4, miniBLOC
在庫4,528
Silicon Carbide Schottky
600V
60A
1.8V @ 60A
No Recovery Time > 500mA (Io)
0ns
1.2mA @ 600V
-
Chassis Mount
SOT-227-4, miniBLOC
ISOTOP?
APTDF400KK100G
Microsemi Corporation

DIODE MODULE 1KV 500A SP6

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io) (per Diode): 500A
  • Voltage - Forward (Vf) (Max) @ If: 2.7V @ 400A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 290ns
  • Current - Reverse Leakage @ Vr: 250µA @ 1000V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: LP4
  • Supplier Device Package: SP6
パッケージ: LP4
在庫7,648
Standard
1000V
500A
2.7V @ 400A
Fast Recovery =< 500ns, > 200mA (Io)
290ns
250µA @ 1000V
-
Chassis Mount
LP4
SP6
APTDF400AK100G
Microsemi Corporation

DIODE MODULE 1KV 500A SP6

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io) (per Diode): 500A
  • Voltage - Forward (Vf) (Max) @ If: 2.7V @ 400A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 290ns
  • Current - Reverse Leakage @ Vr: 250µA @ 1000V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: LP4
  • Supplier Device Package: SP6
パッケージ: LP4
在庫5,792
Standard
1000V
500A
2.7V @ 400A
Fast Recovery =< 500ns, > 200mA (Io)
290ns
250µA @ 1000V
-
Chassis Mount
LP4
SP6
APTDF400AA100G
Microsemi Corporation

DIODE MODULE 1KV 500A SP6

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io) (per Diode): 500A
  • Voltage - Forward (Vf) (Max) @ If: 2.7V @ 400A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 290ns
  • Current - Reverse Leakage @ Vr: 250µA @ 1000V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: LP4
  • Supplier Device Package: SP6
パッケージ: LP4
在庫4,512
Standard
1000V
500A
2.7V @ 400A
Fast Recovery =< 500ns, > 200mA (Io)
290ns
250µA @ 1000V
-
Chassis Mount
LP4
SP6
APTDF400AK20G
Microsemi Corporation

DIODE MODULE 200V 500A SP6

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io) (per Diode): 500A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 400A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 60ns
  • Current - Reverse Leakage @ Vr: 750µA @ 200V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: LP4
  • Supplier Device Package: SP6
パッケージ: LP4
在庫6,768
Standard
200V
500A
1.1V @ 400A
Fast Recovery =< 500ns, > 200mA (Io)
60ns
750µA @ 200V
-
Chassis Mount
LP4
SP6
APTDF400AA20G
Microsemi Corporation

DIODE MODULE 200V 500A SP6

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io) (per Diode): 500A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 400A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 60ns
  • Current - Reverse Leakage @ Vr: 750µA @ 200V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: LP4
  • Supplier Device Package: SP6
パッケージ: LP4
在庫5,360
Standard
200V
500A
1.1V @ 400A
Fast Recovery =< 500ns, > 200mA (Io)
60ns
750µA @ 200V
-
Chassis Mount
LP4
SP6
APTDF400AK60G
Microsemi Corporation

DIODE MODULE 600V 500A SP6

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io) (per Diode): 500A
  • Voltage - Forward (Vf) (Max) @ If: 2V @ 400A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 160ns
  • Current - Reverse Leakage @ Vr: 750µA @ 600V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: LP4
  • Supplier Device Package: SP6
パッケージ: LP4
在庫5,440
Standard
600V
500A
2V @ 400A
Fast Recovery =< 500ns, > 200mA (Io)
160ns
750µA @ 600V
-
Chassis Mount
LP4
SP6
APTDF400AA60G
Microsemi Corporation

DIODE MODULE 600V 500A SP6

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io) (per Diode): 500A
  • Voltage - Forward (Vf) (Max) @ If: 2V @ 400A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 160ns
  • Current - Reverse Leakage @ Vr: 750µA @ 600V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: LP4
  • Supplier Device Package: SP6
パッケージ: LP4
在庫6,144
Standard
600V
500A
2V @ 400A
Fast Recovery =< 500ns, > 200mA (Io)
160ns
750µA @ 600V
-
Chassis Mount
LP4
SP6
APT2X21DC60J
Microsemi Corporation

DIODE MODULE 600V 20A SOT227

  • Diode Configuration: 2 Independent
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io) (per Diode): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 20A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 400µA @ 600V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Chassis Mount
  • Package / Case: ISOTOP
  • Supplier Device Package: SOT-227
パッケージ: ISOTOP
在庫3,568
Silicon Carbide Schottky
600V
20A
1.8V @ 20A
No Recovery Time > 500mA (Io)
0ns
400µA @ 600V
-55°C ~ 175°C
Chassis Mount
ISOTOP
SOT-227
APT2X51DC60J
Microsemi Corporation

DIODE MODULE 600V 50A SOT227

  • Diode Configuration: 2 Independent
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io) (per Diode): 50A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 50A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 1mA @ 600V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
パッケージ: SOT-227-4, miniBLOC
在庫3,248
Silicon Carbide Schottky
600V
50A
1.8V @ 50A
No Recovery Time > 500mA (Io)
0ns
1mA @ 600V
-
Chassis Mount
SOT-227-4, miniBLOC
SOT-227
APT2X20DC120J
Microsemi Corporation

DIODE MODULE 1.2KV 20A SOT227

  • Diode Configuration: 2 Independent
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io) (per Diode): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 20A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 400µA @ 1200V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
パッケージ: SOT-227-4, miniBLOC
在庫3,216
Silicon Carbide Schottky
1200V
20A
1.8V @ 20A
No Recovery Time > 500mA (Io)
0ns
400µA @ 1200V
-55°C ~ 175°C
Chassis Mount
SOT-227-4, miniBLOC
SOT-227
APT2X21DC120J
Microsemi Corporation

DIODE MODULE 1.2KV 20A SOT227

  • Diode Configuration: 2 Independent
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io) (per Diode): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 20A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 400µA @ 1200V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Chassis Mount
  • Package / Case: ISOTOP
  • Supplier Device Package: SOT-227
パッケージ: ISOTOP
在庫5,088
Silicon Carbide Schottky
1200V
20A
1.8V @ 20A
No Recovery Time > 500mA (Io)
0ns
400µA @ 1200V
-55°C ~ 175°C
Chassis Mount
ISOTOP
SOT-227
APT2X40DC60J
Microsemi Corporation

DIODE MODULE 600V 40A SOT227

  • Diode Configuration: 2 Independent
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io) (per Diode): 40A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 40A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 800µA @ 600V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
パッケージ: SOT-227-4, miniBLOC
在庫4,528
Silicon Carbide Schottky
600V
40A
1.8V @ 40A
No Recovery Time > 500mA (Io)
0ns
800µA @ 600V
-
Chassis Mount
SOT-227-4, miniBLOC
SOT-227
R711
Microsemi Corporation

DIODE RECT 100V 15A TO204AA

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io) (per Diode): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 200ns
  • Current - Reverse Leakage @ Vr: 5mA @ 100V
  • Operating Temperature - Junction: -65°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-204AA (TO-3)
パッケージ: TO-204AA, TO-3
在庫2,784
Standard
100V
15A
1.4V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
200ns
5mA @ 100V
-65°C ~ 150°C
Through Hole
TO-204AA, TO-3
TO-204AA (TO-3)
hot MSCD200-16
Microsemi Corporation

DIODE MODULE 1.6KV 200A SD2

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600V
  • Current - Average Rectified (Io) (per Diode): 200A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 300A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 9mA @ 1600V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: D2
  • Supplier Device Package: SD2
パッケージ: D2
在庫4,624
Standard
1600V
200A
1.3V @ 300A
Standard Recovery >500ns, > 200mA (Io)
-
9mA @ 1600V
-
Chassis Mount
D2
SD2
MSKD200-12
Microsemi Corporation

DIODE MODULE 1.2KV 200A SD2

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io) (per Diode): 200A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 300A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 9mA @ 1200V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: D2
  • Supplier Device Package: SD2
パッケージ: D2
在庫7,680
Standard
1200V
200A
1.3V @ 300A
Standard Recovery >500ns, > 200mA (Io)
-
9mA @ 1200V
-
Chassis Mount
D2
SD2
MSCD200-12
Microsemi Corporation

DIODE MODULE 1.2KV 200A SD2

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io) (per Diode): 200A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 300A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 9mA @ 1200V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: D2
  • Supplier Device Package: SD2
パッケージ: D2
在庫3,920
Standard
1200V
200A
1.3V @ 300A
Standard Recovery >500ns, > 200mA (Io)
-
9mA @ 1200V
-
Chassis Mount
D2
SD2
APT2X31DC60J
Microsemi Corporation

DIODE MODULE 600V 30A SOT227

  • Diode Configuration: 2 Independent
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io) (per Diode): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 30A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 600µA @ 600V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
パッケージ: SOT-227-4, miniBLOC
在庫2,736
Silicon Carbide Schottky
600V
30A
1.8V @ 30A
No Recovery Time > 500mA (Io)
0ns
600µA @ 600V
-
Chassis Mount
SOT-227-4, miniBLOC
SOT-227
APT2X30DC60J
Microsemi Corporation

DIODE MODULE 600V 30A SOT227

  • Diode Configuration: 2 Independent
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io) (per Diode): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 30A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 600µA @ 600V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
パッケージ: SOT-227-4, miniBLOC
在庫7,008
Silicon Carbide Schottky
600V
30A
1.8V @ 30A
No Recovery Time > 500mA (Io)
0ns
600µA @ 600V
-
Chassis Mount
SOT-227-4, miniBLOC
SOT-227
hot MSKD165-16
Microsemi Corporation

DIODE MODULE 1.6KV 165A SD2

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600V
  • Current - Average Rectified (Io) (per Diode): 165A
  • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 300A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 9mA @ 1600V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: D2
  • Supplier Device Package: SD2
パッケージ: D2
在庫5,968
Standard
1600V
165A
1.4V @ 300A
Standard Recovery >500ns, > 200mA (Io)
-
9mA @ 1600V
-
Chassis Mount
D2
SD2
JANTXV1N4148UBCC
Microsemi Corporation

DIODE GEN PURP 75V 200MA SMD

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 75V
  • Current - Average Rectified (Io) (per Diode): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 20ns
  • Current - Reverse Leakage @ Vr: 500nA @ 75V
  • Operating Temperature - Junction: -65°C ~ 200°C
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: UB
パッケージ: 3-SMD, No Lead
在庫2,432
Standard
75V
200mA
1.2V @ 100mA
Fast Recovery =< 500ns, > 200mA (Io)
20ns
500nA @ 75V
-65°C ~ 200°C
Surface Mount
3-SMD, No Lead
UB
MSKD165-12
Microsemi Corporation

DIODE MODULE 1.2KV 165A SD2

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io) (per Diode): 165A
  • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 300A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 9mA @ 1200V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: D2
  • Supplier Device Package: SD2
パッケージ: D2
在庫5,408
Standard
1200V
165A
1.4V @ 300A
Standard Recovery >500ns, > 200mA (Io)
-
9mA @ 1200V
-
Chassis Mount
D2
SD2
APT2X100D120J
Microsemi Corporation

DIODE MODULE 1.2KV 93A ISOTOP

  • Diode Configuration: 2 Independent
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io) (per Diode): 93A
  • Voltage - Forward (Vf) (Max) @ If: 2.5V @ 100A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 420ns
  • Current - Reverse Leakage @ Vr: 250µA @ 1200V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Chassis Mount
  • Package / Case: ISOTOP
  • Supplier Device Package: ISOTOP?
パッケージ: ISOTOP
在庫5,360
Standard
1200V
93A
2.5V @ 100A
Fast Recovery =< 500ns, > 200mA (Io)
420ns
250µA @ 1200V
-55°C ~ 175°C
Chassis Mount
ISOTOP
ISOTOP?