ページ 8 - Microsemi Corporation 製品 - ダイオード - 整流器 - シングル

部品番号	メーカ	説明	パッケージ	在庫	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
1N914	Microsemi Corporation	DIODE GEN PURP 75V 200MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 50mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 20ns Current - Reverse Leakage @ Vr: 500nA @ 75V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 (DO-204AH) Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: DO-204AH, DO-35, Axial	在庫1,260,300	75V	200mA	1.2V @ 50mA	Small Signal =< 200mA (Io), Any Speed	20ns	500nA @ 75V	4pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35 (DO-204AH)	-65°C ~ 175°C
JANS1N5418	Microsemi Corporation	DIODE GEN PURP 400V 3A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 1µA @ 400V Capacitance @ Vr, F: 165pF @ 4V Mounting Type: Through Hole Package / Case: B, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: B, Axial	在庫6,928	400V	3A	1.5V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	1µA @ 400V	165pF @ 4V	Through Hole	B, Axial	-	-65°C ~ 175°C
JANS1N5819-1	Microsemi Corporation	DIODE SCHOTTKY 45V 1A DO41 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 490mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 45V Capacitance @ Vr, F: 70pF @ 5V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 125°C	パッケージ: DO-204AL, DO-41, Axial	在庫6,132	45V	1A	490mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 45V	70pF @ 5V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 125°C
SBR6030L	Microsemi Corporation	DIODE SCHOTTKY 30V 60A DO203AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 60A (DC) Voltage - Forward (Vf) (Max) @ If: 480mV @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5mA @ 30V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -65°C ~ 150°C	パッケージ: DO-203AB, DO-5, Stud	在庫5,376	30V	60A (DC)	480mV @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	-	5mA @ 30V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-203AB (DO-5)	-65°C ~ 150°C
SBR60100	Microsemi Corporation	DIODE SCHOTTKY 100V 60A DO5 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 60A (DC) Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 100V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: DO-203AB, DO-5, Stud	在庫4,128	100V	60A (DC)	-	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 100V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 175°C
JANTX1N1190R	Microsemi Corporation	DIODE GEN PURP 600V 35A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 110A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: DO-203AB, DO-5, Stud	在庫6,540	600V	35A	1.4V @ 110A	Fast Recovery =< 500ns, > 200mA (Io)	-	10µA @ 600V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 175°C
UFR3020	Microsemi Corporation	DIODE GEN PURP 200V 30A DO4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 975mV @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 15µA @ 200V Capacitance @ Vr, F: 140pF @ 10V, 1MHz Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: DO-203AA, DO-4, Stud	在庫6,960	200V	30A	975mV @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	15µA @ 200V	140pF @ 10V, 1MHz	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-4	-65°C ~ 175°C
1N6392	Microsemi Corporation	DIODE SCHOTTKY 45V 54A DO5 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 54A Voltage - Forward (Vf) (Max) @ If: 820mV @ 120A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2mA @ 45V Capacitance @ Vr, F: 3000pF @ 5V, 1MHz Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -55°C ~ 175°C	パッケージ: DO-203AB, DO-5, Stud	在庫6,608	45V	54A	820mV @ 120A	Fast Recovery =< 500ns, > 200mA (Io)	-	2mA @ 45V	3000pF @ 5V, 1MHz	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-55°C ~ 175°C
1N4725	Microsemi Corporation	DIODE GEN PURP 1KV 3A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 25µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: Axial	在庫7,032	1000V	3A	1V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	25µA @ 1000V	-	Through Hole	Axial	-	-65°C ~ 175°C
UES1305	Microsemi Corporation	DIODE GEN PURP 300V 3A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 20µA @ 300V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: B, Axial Supplier Device Package: - Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: B, Axial	在庫9,228	300V	3A	1.25V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	20µA @ 300V	-	Through Hole	B, Axial	-	-55°C ~ 150°C
UES1102SM	Microsemi Corporation	DIODE GEN PURP 100V 2.5A A-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 2.5A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 2µA @ 100V Capacitance @ Vr, F: 3.5pF @ 6V, 1MHz Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: A-MELF Operating Temperature - Junction: 150°C (Max)	パッケージ: SQ-MELF, A	在庫7,392	100V	2.5A	-	Fast Recovery =< 500ns, > 200mA (Io)	25ns	2µA @ 100V	3.5pF @ 6V, 1MHz	Surface Mount	SQ-MELF, A	A-MELF	150°C (Max)
UES1103SM	Microsemi Corporation	DIODE GEN PURP 150V 2.5A A-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 2.5A Voltage - Forward (Vf) (Max) @ If: 975mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 2µA @ 150V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: A-MELF Operating Temperature - Junction: 175°C (Max)	パッケージ: SQ-MELF, A	在庫5,552	150V	2.5A	975mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	2µA @ 150V	-	Surface Mount	SQ-MELF, A	A-MELF	175°C (Max)
UES1104	Microsemi Corporation	DIODE GEN PURP 200V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: - Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: A, Axial	在庫6,036	200V	1A	1.25V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 200V	-	Through Hole	A, Axial	-	-55°C ~ 150°C
JANTX1N6075	Microsemi Corporation	DIODE GEN PURP 150V 850MA AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 850mA Voltage - Forward (Vf) (Max) @ If: 2.04V @ 9.4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 1µA @ 150V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: A-PAK Operating Temperature - Junction: -65°C ~ 155°C	パッケージ: A, Axial	在庫3,792	150V	850mA	2.04V @ 9.4A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	1µA @ 150V	-	Through Hole	A, Axial	A-PAK	-65°C ~ 155°C
1N6663US	Microsemi Corporation	DIODE GEN PURP 600V 500MA D5A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 500mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50nA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: SQ-MELF, A	在庫5,200	600V	500mA (DC)	1V @ 400mA	Fast Recovery =< 500ns, > 200mA (Io)	-	50nA @ 600V	-	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 175°C
UES1002	Microsemi Corporation	DIODE GEN PURP 100V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 975mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 2µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: - Operating Temperature - Junction: -55°C ~ 175°C	パッケージ: A, Axial	在庫6,832	100V	1A	975mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	2µA @ 100V	-	Through Hole	A, Axial	-	-55°C ~ 175°C
JANTX1N3595US	Microsemi Corporation	DIODE GEN PURP 200A B-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): 200A (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 1nA @ 125V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, B Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 150°C	パッケージ: SQ-MELF, B	在庫6,112	-	200A (DC)	1V @ 200mA	Standard Recovery >500ns, > 200mA (Io)	3µs	1nA @ 125V	-	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 150°C
1N6628US	Microsemi Corporation	DIODE GEN PURP 660V 1.75A A-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 660V Current - Average Rectified (Io): 1.75A Voltage - Forward (Vf) (Max) @ If: 1.35V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 2µA @ 660V Capacitance @ Vr, F: 40pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: A-MELF Operating Temperature - Junction: -65°C ~ 150°C	パッケージ: SQ-MELF, A	在庫7,376	660V	1.75A	1.35V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	2µA @ 660V	40pF @ 10V, 1MHz	Surface Mount	SQ-MELF, A	A-MELF	-65°C ~ 150°C
JANTXV1N5616	Microsemi Corporation	DIODE GEN PURP 400V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 500nA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 200°C	パッケージ: A, Axial	在庫6,560	400V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	2µs	500nA @ 400V	-	Through Hole	A, Axial	-	-65°C ~ 200°C
JANTXV1N5550	Microsemi Corporation	DIODE GEN PURP 200V 5A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 9A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 1µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: B, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: B, Axial	在庫6,720	200V	5A	1.2V @ 9A	Standard Recovery >500ns, > 200mA (Io)	2µs	1µA @ 200V	-	Through Hole	B, Axial	-	-65°C ~ 175°C
JANTXV1N5622	Microsemi Corporation	DIODE GEN PURP 1KV 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 500nA @ 1000V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 200°C	パッケージ: A, Axial	在庫5,104	1000V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	2µs	500nA @ 1000V	-	Through Hole	A, Axial	-	-65°C ~ 200°C
JANTX1N5419	Microsemi Corporation	DIODE GEN PURP 500V 3A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 500V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250ns Current - Reverse Leakage @ Vr: 1µA @ 500V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: B, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: B, Axial	在庫6,048	500V	3A	1.5V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	1µA @ 500V	-	Through Hole	B, Axial	-	-65°C ~ 175°C
JANTX1N5802	Microsemi Corporation	DIODE GEN PURP 50V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 1µA @ 50V Capacitance @ Vr, F: 25pF @ 10V, 1MHz Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: A, Axial	在庫6,608	50V	1A	875mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 50V	25pF @ 10V, 1MHz	Through Hole	A, Axial	-	-65°C ~ 175°C
1N5417US	Microsemi Corporation	DIODE GEN PURP 200V 3A D5B Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 1µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: E-MELF Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: E-MELF	在庫6,096	200V	3A	1.5V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	1µA @ 200V	-	Surface Mount	E-MELF	D-5B	-65°C ~ 175°C
1N5553US	Microsemi Corporation	DIODE GEN PURP 800V 3A B-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 9A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 1µA @ 800V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, B Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: SQ-MELF, B	在庫7,032	800V	3A	1.2V @ 9A	Standard Recovery >500ns, > 200mA (Io)	2µs	1µA @ 800V	-	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 175°C
JANTX1N4248	Microsemi Corporation	DIODE GEN PURP 800V 1A E3 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 5µs Current - Reverse Leakage @ Vr: 1µA @ 800V Capacitance @ Vr, F: - Mounting Type: - Package / Case: E3 Supplier Device Package: E3 Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: E3	在庫6,228	800V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	5µs	1µA @ 800V	-	-	E3	E3	-65°C ~ 175°C
CDLL5195	Microsemi Corporation	DIODE GEN PURP 180V 200MA DO213 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 180V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 180V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-213AA Supplier Device Package: DO-213AA Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: DO-213AA	在庫7,440	180V	200mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	100µA @ 180V	-	Surface Mount	DO-213AA	DO-213AA	-65°C ~ 175°C
JAN1N5419	Microsemi Corporation	DIODE GEN PURP 500V 3A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 500V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250ns Current - Reverse Leakage @ Vr: 1µA @ 500V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: B, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: B, Axial	在庫8,292	500V	3A	1.5V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	1µA @ 500V	-	Through Hole	B, Axial	-	-65°C ~ 175°C
JAN1N5711-1	Microsemi Corporation	DIODE SCHOTTKY 70V 33MA DO35 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 70V Current - Average Rectified (Io): 33mA Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200nA @ 70V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 150°C	パッケージ: DO-204AH, DO-35, Axial	在庫9,012	70V	33mA	1V @ 15mA	Small Signal =< 200mA (Io), Any Speed	-	200nA @ 70V	2pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 150°C
JANTX1N5614	Microsemi Corporation	DIODE GEN PURP 200V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 500nA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 200°C	パッケージ: A, Axial	在庫5,744	200V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	2µs	500nA @ 200V	-	Through Hole	A, Axial	-	-65°C ~ 200°C

1N914

Microsemi Corporation

DIODE GEN PURP 75V 200MA DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 50mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 20ns
Current - Reverse Leakage @ Vr: 500nA @ 75V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35 (DO-204AH)
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: DO-204AH, DO-35, Axial

在庫1,260,300

75V

200mA

1.2V @ 50mA

Small Signal =< 200mA (Io), Any Speed

20ns

500nA @ 75V

4pF @ 0V, 1MHz

Through Hole

DO-204AH, DO-35, Axial

DO-35 (DO-204AH)

-65°C ~ 175°C

JANS1N5418

Microsemi Corporation

DIODE GEN PURP 400V 3A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 1µA @ 400V
Capacitance @ Vr, F: 165pF @ 4V
Mounting Type: Through Hole
Package / Case: B, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: B, Axial

在庫6,928

400V

3A

1.5V @ 9A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

1µA @ 400V

165pF @ 4V

Through Hole

B, Axial

-

-65°C ~ 175°C

JANS1N5819-1

Microsemi Corporation

DIODE SCHOTTKY 45V 1A DO41

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 490mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 45V
Capacitance @ Vr, F: 70pF @ 5V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 125°C

パッケージ: DO-204AL, DO-41, Axial

在庫6,132

45V

1A

490mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

50µA @ 45V

70pF @ 5V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-65°C ~ 125°C

SBR6030L

Microsemi Corporation

DIODE SCHOTTKY 30V 60A DO203AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 60A (DC)
Voltage - Forward (Vf) (Max) @ If: 480mV @ 60A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5mA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 150°C

パッケージ: DO-203AB, DO-5, Stud

在庫5,376

30V

60A (DC)

480mV @ 60A

Fast Recovery =< 500ns, > 200mA (Io)

-

5mA @ 30V

-

Stud Mount

DO-203AB, DO-5, Stud

DO-203AB (DO-5)

-65°C ~ 150°C

SBR60100

Microsemi Corporation

DIODE SCHOTTKY 100V 60A DO5

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 60A (DC)
Voltage - Forward (Vf) (Max) @ If: -
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: DO-203AB, DO-5, Stud

在庫4,128

100V

60A (DC)

-

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 100V

-

Stud Mount

DO-203AB, DO-5, Stud

DO-5

-65°C ~ 175°C

JANTX1N1190R

Microsemi Corporation

DIODE GEN PURP 600V 35A DO5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 35A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 110A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: DO-203AB, DO-5, Stud

在庫6,540

600V

35A

1.4V @ 110A

Fast Recovery =< 500ns, > 200mA (Io)

-

10µA @ 600V

-

Stud Mount

DO-203AB, DO-5, Stud

DO-5

-65°C ~ 175°C

UFR3020

Microsemi Corporation

DIODE GEN PURP 200V 30A DO4

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 975mV @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 15µA @ 200V
Capacitance @ Vr, F: 140pF @ 10V, 1MHz
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: DO-203AA, DO-4, Stud

在庫6,960

200V

30A

975mV @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

15µA @ 200V

140pF @ 10V, 1MHz

Chassis, Stud Mount

DO-203AA, DO-4, Stud

DO-4

-65°C ~ 175°C

1N6392

Microsemi Corporation

DIODE SCHOTTKY 45V 54A DO5

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 54A
Voltage - Forward (Vf) (Max) @ If: 820mV @ 120A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2mA @ 45V
Capacitance @ Vr, F: 3000pF @ 5V, 1MHz
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: DO-203AB, DO-5, Stud

在庫6,608

45V

54A

820mV @ 120A

Fast Recovery =< 500ns, > 200mA (Io)

-

2mA @ 45V

3000pF @ 5V, 1MHz

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-5

-55°C ~ 175°C

1N4725

Microsemi Corporation

DIODE GEN PURP 1KV 3A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 25µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: Axial

在庫7,032

1000V

3A

1V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

25µA @ 1000V

-

Through Hole

Axial

-

-65°C ~ 175°C

UES1305

Microsemi Corporation

DIODE GEN PURP 300V 3A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 20µA @ 300V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: B, Axial
Supplier Device Package: -
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: B, Axial

在庫9,228

300V

3A

1.25V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

20µA @ 300V

-

Through Hole

B, Axial

-

-55°C ~ 150°C

UES1102SM

Microsemi Corporation

DIODE GEN PURP 100V 2.5A A-MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 2.5A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 2µA @ 100V
Capacitance @ Vr, F: 3.5pF @ 6V, 1MHz
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: A-MELF
Operating Temperature - Junction: 150°C (Max)

パッケージ: SQ-MELF, A

在庫7,392

100V

2.5A

-

Fast Recovery =< 500ns, > 200mA (Io)

25ns

2µA @ 100V

3.5pF @ 6V, 1MHz

Surface Mount

SQ-MELF, A

A-MELF

150°C (Max)

UES1103SM

Microsemi Corporation

DIODE GEN PURP 150V 2.5A A-MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 2.5A
Voltage - Forward (Vf) (Max) @ If: 975mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 2µA @ 150V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: A-MELF
Operating Temperature - Junction: 175°C (Max)

パッケージ: SQ-MELF, A

在庫5,552

150V

2.5A

975mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

2µA @ 150V

-

Surface Mount

SQ-MELF, A

A-MELF

175°C (Max)

UES1104

Microsemi Corporation

DIODE GEN PURP 200V 1A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: -
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: A, Axial

在庫6,036

200V

1A

1.25V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

10µA @ 200V

-

Through Hole

A, Axial

-

-55°C ~ 150°C

JANTX1N6075

Microsemi Corporation

DIODE GEN PURP 150V 850MA AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 850mA
Voltage - Forward (Vf) (Max) @ If: 2.04V @ 9.4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 1µA @ 150V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: A-PAK
Operating Temperature - Junction: -65°C ~ 155°C

パッケージ: A, Axial

在庫3,792

150V

850mA

2.04V @ 9.4A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

1µA @ 150V

-

Through Hole

A, Axial

A-PAK

-65°C ~ 155°C

1N6663US

Microsemi Corporation

DIODE GEN PURP 600V 500MA D5A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 500mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50nA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: SQ-MELF, A

在庫5,200

600V

500mA (DC)

1V @ 400mA

Fast Recovery =< 500ns, > 200mA (Io)

-

50nA @ 600V

-

Surface Mount

SQ-MELF, A

D-5A

-65°C ~ 175°C

UES1002

Microsemi Corporation

DIODE GEN PURP 100V 1A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 975mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 2µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: -
Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: A, Axial

在庫6,832

100V

1A

975mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

2µA @ 100V

-

Through Hole

A, Axial

-

-55°C ~ 175°C

JANTX1N3595US

Microsemi Corporation

DIODE GEN PURP 200A B-MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): 200A (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3µs
Current - Reverse Leakage @ Vr: 1nA @ 125V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C

パッケージ: SQ-MELF, B

在庫6,112

-

200A (DC)

1V @ 200mA

Standard Recovery >500ns, > 200mA (Io)

3µs

1nA @ 125V

-

Surface Mount

SQ-MELF, B

B, SQ-MELF

-65°C ~ 150°C

1N6628US

Microsemi Corporation

DIODE GEN PURP 660V 1.75A A-MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 660V
Current - Average Rectified (Io): 1.75A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 2µA @ 660V
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: A-MELF
Operating Temperature - Junction: -65°C ~ 150°C

パッケージ: SQ-MELF, A

在庫7,376

660V

1.75A

1.35V @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

2µA @ 660V

40pF @ 10V, 1MHz

Surface Mount

SQ-MELF, A

A-MELF

-65°C ~ 150°C

JANTXV1N5616

Microsemi Corporation

DIODE GEN PURP 400V 1A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 500nA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 200°C

パッケージ: A, Axial

在庫6,560

400V

1A

1.3V @ 3A

Standard Recovery >500ns, > 200mA (Io)

2µs

500nA @ 400V

-

Through Hole

A, Axial

-

-65°C ~ 200°C

JANTXV1N5550

Microsemi Corporation

DIODE GEN PURP 200V 5A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 9A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 1µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: B, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: B, Axial

在庫6,720

200V

5A

1.2V @ 9A

Standard Recovery >500ns, > 200mA (Io)

2µs

1µA @ 200V

-

Through Hole

B, Axial

-

-65°C ~ 175°C

JANTXV1N5622

Microsemi Corporation

DIODE GEN PURP 1KV 1A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 500nA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 200°C

パッケージ: A, Axial

在庫5,104

1000V

1A

1.3V @ 3A

Standard Recovery >500ns, > 200mA (Io)

2µs

500nA @ 1000V

-

Through Hole

A, Axial

-

-65°C ~ 200°C

JANTX1N5419

Microsemi Corporation

DIODE GEN PURP 500V 3A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 500V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250ns
Current - Reverse Leakage @ Vr: 1µA @ 500V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: B, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: B, Axial

在庫6,048

500V

3A

1.5V @ 9A

Fast Recovery =< 500ns, > 200mA (Io)

250ns

1µA @ 500V

-

Through Hole

B, Axial

-

-65°C ~ 175°C

JANTX1N5802

Microsemi Corporation

DIODE GEN PURP 50V 1A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 1µA @ 50V
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: A, Axial

在庫6,608

50V

1A

875mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

1µA @ 50V

25pF @ 10V, 1MHz

Through Hole

A, Axial

-

-65°C ~ 175°C

1N5417US

Microsemi Corporation

DIODE GEN PURP 200V 3A D5B

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 1µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: E-MELF
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: E-MELF

在庫6,096

200V

3A

1.5V @ 9A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

1µA @ 200V

-

Surface Mount

E-MELF

D-5B

-65°C ~ 175°C

1N5553US

Microsemi Corporation

DIODE GEN PURP 800V 3A B-MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 9A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 1µA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: SQ-MELF, B

在庫7,032

800V

3A

1.2V @ 9A

Standard Recovery >500ns, > 200mA (Io)

2µs

1µA @ 800V

-

Surface Mount

SQ-MELF, B

B, SQ-MELF

-65°C ~ 175°C

JANTX1N4248

Microsemi Corporation

DIODE GEN PURP 800V 1A E3

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5µs
Current - Reverse Leakage @ Vr: 1µA @ 800V
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: E3
Supplier Device Package: E3
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: E3

在庫6,228

800V

1A

1.3V @ 3A

Standard Recovery >500ns, > 200mA (Io)

5µs

1µA @ 800V

-

E3

-65°C ~ 175°C

CDLL5195

Microsemi Corporation

DIODE GEN PURP 180V 200MA DO213

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 180V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 180V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-213AA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: DO-213AA

在庫7,440

180V

200mA

1V @ 100mA

Small Signal =< 200mA (Io), Any Speed

-

100µA @ 180V

-

Surface Mount

DO-213AA

-65°C ~ 175°C

JAN1N5419

Microsemi Corporation

DIODE GEN PURP 500V 3A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 500V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250ns
Current - Reverse Leakage @ Vr: 1µA @ 500V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: B, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: B, Axial

在庫8,292

500V

3A

1.5V @ 9A

Fast Recovery =< 500ns, > 200mA (Io)

250ns

1µA @ 500V

-

Through Hole

B, Axial

-

-65°C ~ 175°C

JAN1N5711-1

Microsemi Corporation

DIODE SCHOTTKY 70V 33MA DO35

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 70V
Current - Average Rectified (Io): 33mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200nA @ 70V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 150°C

パッケージ: DO-204AH, DO-35, Axial

在庫9,012

70V

33mA

1V @ 15mA

Small Signal =< 200mA (Io), Any Speed

-

200nA @ 70V

2pF @ 0V, 1MHz

Through Hole

DO-204AH, DO-35, Axial

DO-35

-65°C ~ 150°C

JANTX1N5614

Microsemi Corporation

DIODE GEN PURP 200V 1A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 500nA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 200°C

パッケージ: A, Axial

在庫5,744

200V

1A

1.3V @ 3A

Standard Recovery >500ns, > 200mA (Io)

2µs

500nA @ 200V

-

Through Hole

A, Axial

-

-65°C ~ 200°C