ページ 5 - Microsemi Corporation 製品 - トランジスタ - FET、MOSFET - アレイ

部品番号	メーカ	説明	パッケージ	在庫	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
APTM50AM17FG	Microsemi Corporation	MOSFET 2N-CH 500V 180A SP6 FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 180A Rds On (Max) @ Id, Vgs: 20 mOhm @ 90A, 10V Vgs(th) (Max) @ Id: 5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 25V Power - Max: 1250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	パッケージ: SP6	在庫7,232	Standard	500V	180A	20 mOhm @ 90A, 10V	5V @ 10mA	560nC @ 10V	28000pF @ 25V	1250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6
APTM50HM35FG	Microsemi Corporation	MOSFET 4N-CH 500V 99A SP6 FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 99A Rds On (Max) @ Id, Vgs: 39 mOhm @ 49.5A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V Power - Max: 781W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	パッケージ: SP6	在庫7,392	Standard	500V	99A	39 mOhm @ 49.5A, 10V	5V @ 5mA	280nC @ 10V	14000pF @ 25V	781W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6
APTM120DU15G	Microsemi Corporation	MOSFET 2N-CH 1200V 60A SP6 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 60A Rds On (Max) @ Id, Vgs: 175 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 748nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 20600pF @ 25V Power - Max: 1250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	パッケージ: SP6	在庫6,656	Standard	1200V (1.2kV)	60A	175 mOhm @ 30A, 10V	5V @ 10mA	748nC @ 10V	20600pF @ 25V	1250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6
APTM20HM08FG	Microsemi Corporation	MOSFET 4N-CH 200V 208A SP6 FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 208A Rds On (Max) @ Id, Vgs: 10 mOhm @ 104A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V Power - Max: 781W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	パッケージ: SP6	在庫5,248	Standard	200V	208A	10 mOhm @ 104A, 10V	5V @ 5mA	280nC @ 10V	14400pF @ 25V	781W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6
APTMC60TL11CT3AG	Microsemi Corporation	MOSFET 4N-CH 1200V 28A SP3 FET Type: 4 N-Channel (Three Level Inverter) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 28A Rds On (Max) @ Id, Vgs: 98 mOhm @ 20A, 20V Vgs(th) (Max) @ Id: 2.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 49nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 1000V Power - Max: 125W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	パッケージ: SP3	在庫3,232	Standard	1200V (1.2kV)	28A	98 mOhm @ 20A, 20V	2.2V @ 1mA	49nC @ 20V	950pF @ 1000V	125W	-40°C ~ 150°C (TJ)	Chassis Mount	SP3	SP3
APTM100DUM90G	Microsemi Corporation	MOSFET 2N-CH 1000V 78A SP6 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25°C: 78A Rds On (Max) @ Id, Vgs: 105 mOhm @ 39A, 10V Vgs(th) (Max) @ Id: 5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 744nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 20700pF @ 25V Power - Max: 1250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	パッケージ: SP6	在庫2,688	Standard	1000V (1kV)	78A	105 mOhm @ 39A, 10V	5V @ 10mA	744nC @ 10V	20700pF @ 25V	1250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6
APTML1002U60R020T3AG	Microsemi Corporation	MOSFET 2N-CH 1000V 20A SP3 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 720 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V Power - Max: 520W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	パッケージ: SP3	在庫7,040	Standard	1000V (1kV)	20A	720 mOhm @ 10A, 10V	4V @ 2.5mA	-	6000pF @ 25V	520W	-40°C ~ 150°C (TJ)	Chassis Mount	SP3	SP3
APTM50DUM17G	Microsemi Corporation	MOSFET 2N-CH 500V 180A SP6 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 180A Rds On (Max) @ Id, Vgs: 20 mOhm @ 90A, 10V Vgs(th) (Max) @ Id: 5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 25V Power - Max: 1250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	パッケージ: SP6	在庫6,032	Standard	500V	180A	20 mOhm @ 90A, 10V	5V @ 10mA	560nC @ 10V	28000pF @ 25V	1250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6
APTM50AM19FG	Microsemi Corporation	MOSFET 2N-CH 500V 163A SP6 FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 163A Rds On (Max) @ Id, Vgs: 22.5 mOhm @ 81.5A, 10V Vgs(th) (Max) @ Id: 5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 492nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 22400pF @ 25V Power - Max: 1136W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	パッケージ: SP6	在庫6,416	Standard	500V	163A	22.5 mOhm @ 81.5A, 10V	5V @ 10mA	492nC @ 10V	22400pF @ 25V	1136W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6
APTM50HM38FG	Microsemi Corporation	MOSFET 4N-CH 500V 90A SP6 FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 90A Rds On (Max) @ Id, Vgs: 45 mOhm @ 45A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V Power - Max: 694W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	パッケージ: SP6	在庫2,592	Standard	500V	90A	45 mOhm @ 45A, 10V	5V @ 5mA	246nC @ 10V	11200pF @ 25V	694W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6
APTM20DUM04G	Microsemi Corporation	MOSFET 2N-CH 200V 372A SP6 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 372A Rds On (Max) @ Id, Vgs: 5 mOhm @ 186A, 10V Vgs(th) (Max) @ Id: 5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 28900pF @ 25V Power - Max: 1250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	パッケージ: SP6	在庫7,088	Standard	200V	372A	5 mOhm @ 186A, 10V	5V @ 10mA	560nC @ 10V	28900pF @ 25V	1250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6
APTM20AM05FG	Microsemi Corporation	MOSFET 2N-CH 200V 317A SP6 FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 317A Rds On (Max) @ Id, Vgs: 5 mOhm @ 158.5A, 10V Vgs(th) (Max) @ Id: 5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 448nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 27400pF @ 25V Power - Max: 1136W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	パッケージ: SP6	在庫4,128	Standard	200V	317A	5 mOhm @ 158.5A, 10V	5V @ 10mA	448nC @ 10V	27400pF @ 25V	1136W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6
APTM20HM10FG	Microsemi Corporation	MOSFET 4N-CH 200V 175A SP6 FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 175A Rds On (Max) @ Id, Vgs: 12 mOhm @ 87.5A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V Power - Max: 694W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	パッケージ: SP6	在庫6,992	Standard	200V	175A	12 mOhm @ 87.5A, 10V	5V @ 5mA	224nC @ 10V	13700pF @ 25V	694W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6
APTM10HM05FG	Microsemi Corporation	MOSFET 4N-CH 100V 278A SP6 FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 278A Rds On (Max) @ Id, Vgs: 5 mOhm @ 125A, 10V Vgs(th) (Max) @ Id: 4V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 700nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 25V Power - Max: 780W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	パッケージ: SP6	在庫7,968	Standard	100V	278A	5 mOhm @ 125A, 10V	4V @ 5mA	700nC @ 10V	20000pF @ 25V	780W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6
APTML602U12R020T3AG	Microsemi Corporation	MOSFET 2N-CH 600V 45A SP3 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 45A Rds On (Max) @ Id, Vgs: 150 mOhm @ 22.5A, 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V Power - Max: 568W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	パッケージ: SP3	在庫4,816	Standard	600V	45A	150 mOhm @ 22.5A, 10V	4V @ 2.5mA	-	7600pF @ 25V	568W	-40°C ~ 150°C (TJ)	Chassis Mount	SP3	SP3
APTML502UM90R020T3AG	Microsemi Corporation	MOSFET 2N-CH 500V 52A SP3 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 52A Rds On (Max) @ Id, Vgs: 108 mOhm @ 26A, 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V Power - Max: 568W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	パッケージ: SP3	在庫6,560	Standard	500V	52A	108 mOhm @ 26A, 10V	4V @ 2.5mA	-	7600pF @ 25V	568W	-40°C ~ 150°C (TJ)	Chassis Mount	SP3	SP3
APTM120A20SG	Microsemi Corporation	MOSFET 2N-CH 1200V 50A SP6 FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 50A Rds On (Max) @ Id, Vgs: 240 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 5V @ 6mA Gate Charge (Qg) (Max) @ Vgs: 600nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 15200pF @ 25V Power - Max: 1250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	パッケージ: SP6	在庫5,136	Standard	1200V (1.2kV)	50A	240 mOhm @ 25A, 10V	5V @ 6mA	600nC @ 10V	15200pF @ 25V	1250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6
APTM100TA35FPG	Microsemi Corporation	MOSFET 6N-CH 1000V 22A SP6-P FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25°C: 22A Rds On (Max) @ Id, Vgs: 420 mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V Power - Max: 390W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6-P	パッケージ: SP6	在庫5,824	Standard	1000V (1kV)	22A	420 mOhm @ 11A, 10V	5V @ 2.5mA	186nC @ 10V	5200pF @ 25V	390W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6-P
APTM120A20DG	Microsemi Corporation	MOSFET 2N-CH 1200V 50A SP6 FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 50A Rds On (Max) @ Id, Vgs: 240 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 5V @ 6mA Gate Charge (Qg) (Max) @ Vgs: 600nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 15200pF @ 25V Power - Max: 1250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	パッケージ: SP6	在庫4,496	Standard	1200V (1.2kV)	50A	240 mOhm @ 25A, 10V	5V @ 6mA	600nC @ 10V	15200pF @ 25V	1250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6
APTM100A13DG	Microsemi Corporation	MOSFET 2N-CH 1000V 65A SP6 FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25°C: 65A Rds On (Max) @ Id, Vgs: 156 mOhm @ 32.5A, 10V Vgs(th) (Max) @ Id: 5V @ 6mA Gate Charge (Qg) (Max) @ Vgs: 562nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 15200pF @ 25V Power - Max: 1250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	パッケージ: SP6	在庫3,072	Standard	1000V (1kV)	65A	156 mOhm @ 32.5A, 10V	5V @ 6mA	562nC @ 10V	15200pF @ 25V	1250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6
APTM20DUM05G	Microsemi Corporation	MOSFET 2N-CH 200V 317A SP6 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 317A Rds On (Max) @ Id, Vgs: 6 mOhm @ 158.5A, 10V Vgs(th) (Max) @ Id: 5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 448nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 27400pF @ 25V Power - Max: 1136W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	パッケージ: SP6	在庫6,848	Standard	200V	317A	6 mOhm @ 158.5A, 10V	5V @ 10mA	448nC @ 10V	27400pF @ 25V	1136W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6
APTM50TAM65FPG	Microsemi Corporation	MOSFET 6N-CH 500V 51A SP6-P FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 51A Rds On (Max) @ Id, Vgs: 78 mOhm @ 25.5A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V Power - Max: 390W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6-P	パッケージ: SP6	在庫7,040	Standard	500V	51A	78 mOhm @ 25.5A, 10V	5V @ 2.5mA	140nC @ 10V	7000pF @ 25V	390W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6-P
APTM10DUM02G	Microsemi Corporation	MOSFET 2N-CH 100V 495A SP6 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 495A Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 200A, 10V Vgs(th) (Max) @ Id: 4V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V Power - Max: 1250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	パッケージ: SP6	在庫3,472	Standard	100V	495A	2.5 mOhm @ 200A, 10V	4V @ 10mA	1360nC @ 10V	40000pF @ 25V	1250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6
APTM20TAM16FPG	Microsemi Corporation	MOSFET 6N-CH 200V 104A SP6-P FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 104A Rds On (Max) @ Id, Vgs: 19 mOhm @ 52A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7220pF @ 25V Power - Max: 390W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6-P	パッケージ: SP6	在庫4,448	Standard	200V	104A	19 mOhm @ 52A, 10V	5V @ 2.5mA	140nC @ 10V	7220pF @ 25V	390W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6-P
APTM120TDU57PG	Microsemi Corporation	MOSFET 6N-CH 1200V 17A SP6-P FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 17A Rds On (Max) @ Id, Vgs: 684 mOhm @ 8.5A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 187nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5155pF @ 25V Power - Max: 390W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6-P	パッケージ: SP6	在庫6,048	Standard	1200V (1.2kV)	17A	684 mOhm @ 8.5A, 10V	5V @ 2.5mA	187nC @ 10V	5155pF @ 25V	390W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6-P
APTSM120AM55CT1AG	Microsemi Corporation	POWER MODULE - SIC FET Type: 2 N-Channel (Dual), Schottky FET Feature: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 74A (Tc) Rds On (Max) @ Id, Vgs: 50 mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 3V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 272nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 5120pF @ 1000V Power - Max: 470W Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	パッケージ: SP1	在庫2,544	Silicon Carbide (SiC)	1200V (1.2kV)	74A (Tc)	50 mOhm @ 40A, 20V	3V @ 2mA	272nC @ 20V	5120pF @ 1000V	470W	-40°C ~ 175°C (TJ)	Chassis Mount	SP1	SP1
APTM20AM06SG	Microsemi Corporation	MOSFET 2N-CH 200V 300A SP6 FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 300A Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 150A, 10V Vgs(th) (Max) @ Id: 5V @ 6mA Gate Charge (Qg) (Max) @ Vgs: 325nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 18500pF @ 25V Power - Max: 1250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	パッケージ: SP6	在庫7,696	Standard	200V	300A	7.2 mOhm @ 150A, 10V	5V @ 6mA	325nC @ 10V	18500pF @ 25V	1250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6
APTM10TAM09FPG	Microsemi Corporation	MOSFET 6N-CH 100V 139A SP6-P FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 139A Rds On (Max) @ Id, Vgs: 10 mOhm @ 69.5A, 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V Power - Max: 390W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6-P	パッケージ: SP6	在庫6,400	Standard	100V	139A	10 mOhm @ 69.5A, 10V	4V @ 2.5mA	350nC @ 10V	9875pF @ 25V	390W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6-P
APTM50AM38SCTG	Microsemi Corporation	MOSFET 2N-CH 500V 90A SP4 FET Type: 2 N-Channel (Half Bridge) FET Feature: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 90A Rds On (Max) @ Id, Vgs: 45 mOhm @ 45A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V Power - Max: 694W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	パッケージ: SP4	在庫4,576	Silicon Carbide (SiC)	500V	90A	45 mOhm @ 45A, 10V	5V @ 5mA	246nC @ 10V	11200pF @ 25V	694W	-40°C ~ 150°C (TJ)	Chassis Mount	SP4	SP4
APTC80AM75SCG	Microsemi Corporation	MOSFET 2N-CH 800V 56A SP6 FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 56A Rds On (Max) @ Id, Vgs: 75 mOhm @ 28A, 10V Vgs(th) (Max) @ Id: 3.9V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 364nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9015pF @ 25V Power - Max: 568W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	パッケージ: SP6	在庫3,952	Standard	800V	56A	75 mOhm @ 28A, 10V	3.9V @ 4mA	364nC @ 10V	9015pF @ 25V	568W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6

APTM50AM17FG

Microsemi Corporation

MOSFET 2N-CH 500V 180A SP6

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 180A
Rds On (Max) @ Id, Vgs: 20 mOhm @ 90A, 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 25V
Power - Max: 1250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6

パッケージ: SP6

在庫7,232

Standard

500V

180A

20 mOhm @ 90A, 10V

5V @ 10mA

560nC @ 10V

28000pF @ 25V

1250W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

APTM50HM35FG

Microsemi Corporation

MOSFET 4N-CH 500V 99A SP6

FET Type: 4 N-Channel (H-Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 99A
Rds On (Max) @ Id, Vgs: 39 mOhm @ 49.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Power - Max: 781W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6

パッケージ: SP6

在庫7,392

Standard

500V

99A

39 mOhm @ 49.5A, 10V

5V @ 5mA

280nC @ 10V

14000pF @ 25V

781W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

APTM120DU15G

Microsemi Corporation

MOSFET 2N-CH 1200V 60A SP6

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 60A
Rds On (Max) @ Id, Vgs: 175 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 748nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 20600pF @ 25V
Power - Max: 1250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6

パッケージ: SP6

在庫6,656

Standard

1200V (1.2kV)

60A

175 mOhm @ 30A, 10V

5V @ 10mA

748nC @ 10V

20600pF @ 25V

1250W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

APTM20HM08FG

Microsemi Corporation

MOSFET 4N-CH 200V 208A SP6

FET Type: 4 N-Channel (H-Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 208A
Rds On (Max) @ Id, Vgs: 10 mOhm @ 104A, 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
Power - Max: 781W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6

パッケージ: SP6

在庫5,248

Standard

200V

208A

10 mOhm @ 104A, 10V

5V @ 5mA

280nC @ 10V

14400pF @ 25V

781W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

APTMC60TL11CT3AG

Microsemi Corporation

MOSFET 4N-CH 1200V 28A SP3

FET Type: 4 N-Channel (Three Level Inverter)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 28A
Rds On (Max) @ Id, Vgs: 98 mOhm @ 20A, 20V
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 1000V
Power - Max: 125W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3

パッケージ: SP3

在庫3,232

Standard

1200V (1.2kV)

28A

98 mOhm @ 20A, 20V

2.2V @ 1mA

49nC @ 20V

950pF @ 1000V

125W

-40°C ~ 150°C (TJ)

Chassis Mount

SP3

APTM100DUM90G

Microsemi Corporation

MOSFET 2N-CH 1000V 78A SP6

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 78A
Rds On (Max) @ Id, Vgs: 105 mOhm @ 39A, 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 744nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 20700pF @ 25V
Power - Max: 1250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6

パッケージ: SP6

在庫2,688

Standard

1000V (1kV)

78A

105 mOhm @ 39A, 10V

5V @ 10mA

744nC @ 10V

20700pF @ 25V

1250W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

APTML1002U60R020T3AG

Microsemi Corporation

MOSFET 2N-CH 1000V 20A SP3

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 720 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V
Power - Max: 520W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3

パッケージ: SP3

在庫7,040

Standard

1000V (1kV)

20A

720 mOhm @ 10A, 10V

4V @ 2.5mA

-

6000pF @ 25V

520W

-40°C ~ 150°C (TJ)

Chassis Mount

SP3

APTM50DUM17G

Microsemi Corporation

MOSFET 2N-CH 500V 180A SP6

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 180A
Rds On (Max) @ Id, Vgs: 20 mOhm @ 90A, 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 25V
Power - Max: 1250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6

パッケージ: SP6

在庫6,032

Standard

500V

180A

20 mOhm @ 90A, 10V

5V @ 10mA

560nC @ 10V

28000pF @ 25V

1250W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

APTM50AM19FG

Microsemi Corporation

MOSFET 2N-CH 500V 163A SP6

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 163A
Rds On (Max) @ Id, Vgs: 22.5 mOhm @ 81.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 492nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 22400pF @ 25V
Power - Max: 1136W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6

パッケージ: SP6

在庫6,416

Standard

500V

163A

22.5 mOhm @ 81.5A, 10V

5V @ 10mA

492nC @ 10V

22400pF @ 25V

1136W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

APTM50HM38FG

Microsemi Corporation

MOSFET 4N-CH 500V 90A SP6

FET Type: 4 N-Channel (H-Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 90A
Rds On (Max) @ Id, Vgs: 45 mOhm @ 45A, 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V
Power - Max: 694W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6

パッケージ: SP6

在庫2,592

Standard

500V

90A

45 mOhm @ 45A, 10V

5V @ 5mA

246nC @ 10V

11200pF @ 25V

694W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

APTM20DUM04G

Microsemi Corporation

MOSFET 2N-CH 200V 372A SP6

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 372A
Rds On (Max) @ Id, Vgs: 5 mOhm @ 186A, 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 28900pF @ 25V
Power - Max: 1250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6

パッケージ: SP6

在庫7,088

Standard

200V

372A

5 mOhm @ 186A, 10V

5V @ 10mA

560nC @ 10V

28900pF @ 25V

1250W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

APTM20AM05FG

Microsemi Corporation

MOSFET 2N-CH 200V 317A SP6

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 317A
Rds On (Max) @ Id, Vgs: 5 mOhm @ 158.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 448nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 27400pF @ 25V
Power - Max: 1136W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6

パッケージ: SP6

在庫4,128

Standard

200V

317A

5 mOhm @ 158.5A, 10V

5V @ 10mA

448nC @ 10V

27400pF @ 25V

1136W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

APTM20HM10FG

Microsemi Corporation

MOSFET 4N-CH 200V 175A SP6

FET Type: 4 N-Channel (H-Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 175A
Rds On (Max) @ Id, Vgs: 12 mOhm @ 87.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V
Power - Max: 694W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6

パッケージ: SP6

在庫6,992

Standard

200V

175A

12 mOhm @ 87.5A, 10V

5V @ 5mA

224nC @ 10V

13700pF @ 25V

694W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

APTM10HM05FG

Microsemi Corporation

MOSFET 4N-CH 100V 278A SP6

FET Type: 4 N-Channel (H-Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 278A
Rds On (Max) @ Id, Vgs: 5 mOhm @ 125A, 10V
Vgs(th) (Max) @ Id: 4V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 700nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 25V
Power - Max: 780W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6

パッケージ: SP6

在庫7,968

Standard

100V

278A

5 mOhm @ 125A, 10V

4V @ 5mA

700nC @ 10V

20000pF @ 25V

780W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

APTML602U12R020T3AG

Microsemi Corporation

MOSFET 2N-CH 600V 45A SP3

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 45A
Rds On (Max) @ Id, Vgs: 150 mOhm @ 22.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V
Power - Max: 568W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3

パッケージ: SP3

在庫4,816

Standard

600V

45A

150 mOhm @ 22.5A, 10V

4V @ 2.5mA

-

7600pF @ 25V

568W

-40°C ~ 150°C (TJ)

Chassis Mount

SP3

APTML502UM90R020T3AG

Microsemi Corporation

MOSFET 2N-CH 500V 52A SP3

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 52A
Rds On (Max) @ Id, Vgs: 108 mOhm @ 26A, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V
Power - Max: 568W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3

パッケージ: SP3

在庫6,560

Standard

500V

52A

108 mOhm @ 26A, 10V

4V @ 2.5mA

-

7600pF @ 25V

568W

-40°C ~ 150°C (TJ)

Chassis Mount

SP3

APTM120A20SG

Microsemi Corporation

MOSFET 2N-CH 1200V 50A SP6

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 50A
Rds On (Max) @ Id, Vgs: 240 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 5V @ 6mA
Gate Charge (Qg) (Max) @ Vgs: 600nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 15200pF @ 25V
Power - Max: 1250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6

パッケージ: SP6

在庫5,136

Standard

1200V (1.2kV)

50A

240 mOhm @ 25A, 10V

5V @ 6mA

600nC @ 10V

15200pF @ 25V

1250W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

APTM100TA35FPG

Microsemi Corporation

MOSFET 6N-CH 1000V 22A SP6-P

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 22A
Rds On (Max) @ Id, Vgs: 420 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
Power - Max: 390W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6-P

パッケージ: SP6

在庫5,824

Standard

1000V (1kV)

22A

420 mOhm @ 11A, 10V

5V @ 2.5mA

186nC @ 10V

5200pF @ 25V

390W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

SP6-P

APTM120A20DG

Microsemi Corporation

MOSFET 2N-CH 1200V 50A SP6

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 50A
Rds On (Max) @ Id, Vgs: 240 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 5V @ 6mA
Gate Charge (Qg) (Max) @ Vgs: 600nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 15200pF @ 25V
Power - Max: 1250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6

パッケージ: SP6

在庫4,496

Standard

1200V (1.2kV)

50A

240 mOhm @ 25A, 10V

5V @ 6mA

600nC @ 10V

15200pF @ 25V

1250W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

APTM100A13DG

Microsemi Corporation

MOSFET 2N-CH 1000V 65A SP6

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 65A
Rds On (Max) @ Id, Vgs: 156 mOhm @ 32.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 6mA
Gate Charge (Qg) (Max) @ Vgs: 562nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 15200pF @ 25V
Power - Max: 1250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6

パッケージ: SP6

在庫3,072

Standard

1000V (1kV)

65A

156 mOhm @ 32.5A, 10V

5V @ 6mA

562nC @ 10V

15200pF @ 25V

1250W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

APTM20DUM05G

Microsemi Corporation

MOSFET 2N-CH 200V 317A SP6

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 317A
Rds On (Max) @ Id, Vgs: 6 mOhm @ 158.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 448nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 27400pF @ 25V
Power - Max: 1136W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6

パッケージ: SP6

在庫6,848

Standard

200V

317A

6 mOhm @ 158.5A, 10V

5V @ 10mA

448nC @ 10V

27400pF @ 25V

1136W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

APTM50TAM65FPG

Microsemi Corporation

MOSFET 6N-CH 500V 51A SP6-P

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 51A
Rds On (Max) @ Id, Vgs: 78 mOhm @ 25.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
Power - Max: 390W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6-P

パッケージ: SP6

在庫7,040

Standard

500V

51A

78 mOhm @ 25.5A, 10V

5V @ 2.5mA

140nC @ 10V

7000pF @ 25V

390W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

SP6-P

APTM10DUM02G

Microsemi Corporation

MOSFET 2N-CH 100V 495A SP6

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 495A
Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 200A, 10V
Vgs(th) (Max) @ Id: 4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V
Power - Max: 1250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6

パッケージ: SP6

在庫3,472

Standard

100V

495A

2.5 mOhm @ 200A, 10V

4V @ 10mA

1360nC @ 10V

40000pF @ 25V

1250W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

APTM20TAM16FPG

Microsemi Corporation

MOSFET 6N-CH 200V 104A SP6-P

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 104A
Rds On (Max) @ Id, Vgs: 19 mOhm @ 52A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7220pF @ 25V
Power - Max: 390W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6-P

パッケージ: SP6

在庫4,448

Standard

200V

104A

19 mOhm @ 52A, 10V

5V @ 2.5mA

140nC @ 10V

7220pF @ 25V

390W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

SP6-P

APTM120TDU57PG

Microsemi Corporation

MOSFET 6N-CH 1200V 17A SP6-P

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 17A
Rds On (Max) @ Id, Vgs: 684 mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 187nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5155pF @ 25V
Power - Max: 390W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6-P

パッケージ: SP6

在庫6,048

Standard

1200V (1.2kV)

17A

684 mOhm @ 8.5A, 10V

5V @ 2.5mA

187nC @ 10V

5155pF @ 25V

390W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

SP6-P

APTSM120AM55CT1AG

Microsemi Corporation

POWER MODULE - SIC

FET Type: 2 N-Channel (Dual), Schottky
FET Feature: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: 50 mOhm @ 40A, 20V
Vgs(th) (Max) @ Id: 3V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 272nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 5120pF @ 1000V
Power - Max: 470W
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1

パッケージ: SP1

在庫2,544

Silicon Carbide (SiC)

1200V (1.2kV)

74A (Tc)

50 mOhm @ 40A, 20V

3V @ 2mA

272nC @ 20V

5120pF @ 1000V

470W

-40°C ~ 175°C (TJ)

Chassis Mount

SP1

APTM20AM06SG

Microsemi Corporation

MOSFET 2N-CH 200V 300A SP6

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 300A
Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 150A, 10V
Vgs(th) (Max) @ Id: 5V @ 6mA
Gate Charge (Qg) (Max) @ Vgs: 325nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 18500pF @ 25V
Power - Max: 1250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6

パッケージ: SP6

在庫7,696

Standard

200V

300A

7.2 mOhm @ 150A, 10V

5V @ 6mA

325nC @ 10V

18500pF @ 25V

1250W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

APTM10TAM09FPG

Microsemi Corporation

MOSFET 6N-CH 100V 139A SP6-P

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 139A
Rds On (Max) @ Id, Vgs: 10 mOhm @ 69.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V
Power - Max: 390W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6-P

パッケージ: SP6

在庫6,400

Standard

100V

139A

10 mOhm @ 69.5A, 10V

4V @ 2.5mA

350nC @ 10V

9875pF @ 25V

390W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

SP6-P

APTM50AM38SCTG

Microsemi Corporation

MOSFET 2N-CH 500V 90A SP4

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 90A
Rds On (Max) @ Id, Vgs: 45 mOhm @ 45A, 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V
Power - Max: 694W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP4
Supplier Device Package: SP4

パッケージ: SP4

在庫4,576

Silicon Carbide (SiC)

500V

90A

45 mOhm @ 45A, 10V

5V @ 5mA

246nC @ 10V

11200pF @ 25V

694W

-40°C ~ 150°C (TJ)

Chassis Mount

SP4

APTC80AM75SCG

Microsemi Corporation

MOSFET 2N-CH 800V 56A SP6

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 56A
Rds On (Max) @ Id, Vgs: 75 mOhm @ 28A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 364nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 9015pF @ 25V
Power - Max: 568W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6

パッケージ: SP6

在庫3,952

Standard

800V

56A

75 mOhm @ 28A, 10V

3.9V @ 4mA

364nC @ 10V

9015pF @ 25V

568W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6