Microsemi Corporation 製品

090-44350-12

Microsemi Corporation

OSC ATOMIC 10MHZ CMOS SMD 85G

• Type: Atomic
• Frequency: 10MHz
• Function: -
• Output: CMOS
• Voltage - Supply: 5V
• Frequency Stability: 30ppt
• Operating Temperature: -10°C ~ 75°C
• Current - Supply (Max): 2.8A
• Ratings: -
• Mounting Type: Surface Mount
• Package / Case: Module
• Size / Dimension: 2.000" L x 2.000" W (50.80mm x 50.80mm)
• Height - Seated (Max): 0.740" (18.80mm)

パッケージ: Module

APTGF90SK60D1G

Microsemi Corporation

IGBT 600V 130A 445W D1

• IGBT Type: NPT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 130A
• Power - Max: 445W
• Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 100A
• Current - Collector Cutoff (Max): 500µA
• Input Capacitance (Cies) @ Vce: 4.3nF @ 25V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: D1
• Supplier Device Package: D1

パッケージ: D1

APTC60AM83BC1G

Microsemi Corporation

MOSFET 3N-CH 600V 36A SP1

• FET Type: 3 N Channel (Phase Leg + Boost Chopper)
• FET Feature: Super Junction
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 36A
• Rds On (Max) @ Id, Vgs: 83 mOhm @ 24.5A, 10V
• Vgs(th) (Max) @ Id: 5V @ 3mA
• Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
• Power - Max: 250W
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: SP1
• Supplier Device Package: SP1

パッケージ: SP1

1N5236B (DO-35)

Microsemi Corporation

DIODE ZENER 7.5V 500MW DO35

• Voltage - Zener (Nom) (Vz): 7.5V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 6 Ohms
• Current - Reverse Leakage @ Vr: 3µA @ 6V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35

パッケージ: DO-204AH, DO-35, Axial

1N4911A

Microsemi Corporation

DIODE ZENER 12.8V 400MW DO7

• Voltage - Zener (Nom) (Vz): 12.8V
• Tolerance: ±5%
• Power - Max: 400mW
• Impedance (Max) (Zzt): 50 Ohms
• Current - Reverse Leakage @ Vr: -
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 100°C
• Mounting Type: Through Hole
• Package / Case: DO-204AA, DO-7, Axial
• Supplier Device Package: DO-7

パッケージ: DO-204AA, DO-7, Axial

JAN1N4475

Microsemi Corporation

DIODE ZENER 27V 1.5W DO41

• Voltage - Zener (Nom) (Vz): 27V
• Tolerance: ±5%
• Power - Max: 1.5W
• Impedance (Max) (Zzt): 18 Ohms
• Current - Reverse Leakage @ Vr: 50nA @ 21.6V
• Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-41

パッケージ: DO-204AL, DO-41, Axial

CDLL958A

Microsemi Corporation

DIODE ZENER 7.5V 500MW DO213AB

• Voltage - Zener (Nom) (Vz): 7.5V
• Tolerance: ±10%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 5.5 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 5.7V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF
• Supplier Device Package: DO-213AB

パッケージ: DO-213AB, MELF

1N5936BP/TR8

Microsemi Corporation

DIODE ZENER 30V 1.5W DO204AL

• Voltage - Zener (Nom) (Vz): 30V
• Tolerance: ±5%
• Power - Max: 1.5W
• Impedance (Max) (Zzt): 28 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 22.8V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

パッケージ: DO-204AL, DO-41, Axial

JANTXV1N4942

Microsemi Corporation

DIODE GEN PURP 200V 1A AXIAL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 150ns
• Current - Reverse Leakage @ Vr: 1µA @ 200V
• Capacitance @ Vr, F: 45pF @ 12V, 1MHz
• Mounting Type: Through Hole
• Package / Case: A, Axial
• Supplier Device Package: -
• Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: A, Axial

1N5806TR

Microsemi Corporation

DIODE GEN PURP 150V 2.5A AXIAL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 150V
• Current - Average Rectified (Io): 2.5A
• Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25ns
• Current - Reverse Leakage @ Vr: 1µA @ 150V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: A, Axial
• Supplier Device Package: A-PAK
• Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: A, Axial

LE58QL02FJC

Microsemi Corporation

IC CODEC/FILTER 4CH 16IO 44PLCC

• Function: Subscriber Line Interface Concept (SLIC)
• Interface: PCM
• Number of Circuits: 4
• Voltage - Supply: 3.3V
• Current - Supply: -
• Power (Watts): -
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 44-LCC (J-Lead)
• Supplier Device Package: 44-PLCC (16.51x16.51)

パッケージ: 44-LCC (J-Lead)

MT3371BS1

Microsemi Corporation

IC RECEIVER DTMF 50DB 18SOIC

• Function: DTMF Receiver
• Interface: Parallel
• Number of Circuits: 1
• Voltage - Supply: 4.75 V ~ 5.25 V
• Current - Supply: 3mA
• Power (Watts): -
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 18-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 18-SOIC

パッケージ: 18-SOIC (0.295", 7.50mm Width)

A54SX16P-1TQG144M

Microsemi Corporation

IC FPGA 113 I/O 144TQFP

• Number of LABs/CLBs: 1452
• Number of Logic Elements/Cells: -
• Total RAM Bits: -
• Number of I/O: 113
• Number of Gates: 24000
• Voltage - Supply: 3 V ~ 3.6 V, 4.75 V ~ 5.25 V
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 125°C (TC)
• Package / Case: 144-LQFP
• Supplier Device Package: 144-TQFP (20x20)

パッケージ: 144-LQFP

AX250-1PQG208I

Microsemi Corporation

IC FPGA 115 I/O 208QFP

• Number of LABs/CLBs: 4224
• Number of Logic Elements/Cells: -
• Total RAM Bits: 55296
• Number of I/O: 115
• Number of Gates: 250000
• Voltage - Supply: 1.425 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 208-BFQFP
• Supplier Device Package: 208-PQFP (28x28)

パッケージ: 208-BFQFP

A42MX24-1PQG160M

Microsemi Corporation

IC FPGA 125 I/O 160QFP

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: -
• Total RAM Bits: -
• Number of I/O: 125
• Number of Gates: 36000
• Voltage - Supply: 3 V ~ 3.6 V, 4.5 V ~ 5.5 V
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 125°C (TC)
• Package / Case: 160-BQFP
• Supplier Device Package: 160-PQFP (28x28)

パッケージ: 160-BQFP

MAP4KE20A

Microsemi Corporation

TVS DIODE 17.1VWM 27.7VC DO41

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 17.1V
• Voltage - Breakdown (Min): 19V
• Voltage - Clamping (Max) @ Ipp: 27.7V
• Current - Peak Pulse (10/1000µs): 14.5A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

パッケージ: DO-204AL, DO-41, Axial

MALCE100AE3

Microsemi Corporation

TVS DIODE 100VWM 162VC AXIAL

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 100V
• Voltage - Breakdown (Min): 111V
• Voltage - Clamping (Max) @ Ipp: 162V
• Current - Peak Pulse (10/1000µs): 9.3A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 90pF @ 1MHz
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: CASE-1

パッケージ: DO-201AA, DO-27, Axial

UPT12R/TR7

Microsemi Corporation

TVS DIODE 12VWM POWERMITE

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 12V
• Voltage - Breakdown (Min): 13.8V
• Voltage - Clamping (Max) @ Ipp: 21.6V
• Current - Peak Pulse (10/1000µs): 6.94A
• Power - Peak Pulse: 1000W (1kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-216AA
• Supplier Device Package: Powermite 1 (DO216-AA)

パッケージ: DO-216AA

MXLPLAD36KP43AE3

Microsemi Corporation

TVS DIODE 69.4VC 519A PLAD

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 43V
• Voltage - Breakdown (Min): 47.8V
• Voltage - Clamping (Max) @ Ipp: 69.4V
• Current - Peak Pulse (10/1000µs): 519A
• Power - Peak Pulse: 36000W (36kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

パッケージ: Nonstandard SMD

MXLPLAD18KP14CA

Microsemi Corporation

TVS DIODE 23.2VC 776A PLAD

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 14V
• Voltage - Breakdown (Min): 15.6V
• Voltage - Clamping (Max) @ Ipp: 23.2V
• Current - Peak Pulse (10/1000µs): 776A
• Power - Peak Pulse: 18000W (18kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

パッケージ: Nonstandard SMD

MXPLAD6.5KP170CA

Microsemi Corporation

TVS DIODE 170VWM 275VC PLAD

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 170V
• Voltage - Breakdown (Min): 189V
• Voltage - Clamping (Max) @ Ipp: 275V
• Current - Peak Pulse (10/1000µs): 23.6A
• Power - Peak Pulse: 6500W (6.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

パッケージ: Nonstandard SMD

MXP6KE62CA

Microsemi Corporation

TVS DIODE 53VWM 85VC T18

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 53V
• Voltage - Breakdown (Min): 58.9V
• Voltage - Clamping (Max) @ Ipp: 85V
• Current - Peak Pulse (10/1000µs): 7.1A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: T-18, Axial
• Supplier Device Package: T-18

パッケージ: T-18, Axial

MXLSMCJ11CAE3

Microsemi Corporation

TVS DIODE 11VWM 18.2VC DO214AB

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 11V
• Voltage - Breakdown (Min): 12.2V
• Voltage - Clamping (Max) @ Ipp: 18.2V
• Current - Peak Pulse (10/1000µs): 82.4A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

パッケージ: DO-214AB, SMC

MASMCJ13A

Microsemi Corporation

TVS DIODE 13VWM 21.5VC DO214AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 13V
• Voltage - Breakdown (Min): 14.4V
• Voltage - Clamping (Max) @ Ipp: 21.5V
• Current - Peak Pulse (10/1000µs): 69.7A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

パッケージ: DO-214AB, SMC

SMCJ6044AE3/TR13

Microsemi Corporation

TVS DIODE 13VWM 22.5VC SMCJ

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 13V
• Voltage - Breakdown (Min): 15.2V
• Voltage - Clamping (Max) @ Ipp: 22.5V
• Current - Peak Pulse (10/1000µs): 67A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

パッケージ: DO-214AB, SMC

SMBJ350CE3/TR13

Microsemi Corporation

TVS DIODE 350VWM SMBJ

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 350V
• Voltage - Breakdown (Min): -
• Voltage - Clamping (Max) @ Ipp: -
• Current - Peak Pulse (10/1000µs): -
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMBJ (DO-214AA)

パッケージ: DO-214AA, SMB

SMBJ22CE3/TR13

Microsemi Corporation

TVS DIODE 22VWM 39.4VC SMBJ

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 22V
• Voltage - Breakdown (Min): 24.4V
• Voltage - Clamping (Max) @ Ipp: 39.4V
• Current - Peak Pulse (10/1000µs): 15.2A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMBJ (DO-214AA)

パッケージ: DO-214AA, SMB

MS2502A

Microsemi Corporation

RF POWER TRANSISTOR

• Transistor Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Frequency - Transition: -
• Noise Figure (dB Typ @ f): -
• Gain: -
• Power - Max: -
• DC Current Gain (hFE) (Min) @ Ic, Vce: -
• Current - Collector (Ic) (Max): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

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