Microsemi Corporation 製品

2N4860

Microsemi Corporation

N CHANNEL JFET

• FET Type: N-Channel
• Voltage - Breakdown (V(BR)GSS): 30V
• Drain to Source Voltage (Vdss): 30V
• Current - Drain (Idss) @ Vds (Vgs=0): 100mA @ 15V
• Current Drain (Id) - Max: -
• Voltage - Cutoff (VGS off) @ Id: 6V @ 500pA
• Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
• Resistance - RDS(On): 40 Ohm
• Power - Max: 360mW
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-206AA, TO-18-3 Metal Can
• Supplier Device Package: TO-18

パッケージ: TO-206AA, TO-18-3 Metal Can

APT30GF60JU3

Microsemi Corporation

IGBT 600V 58A 192W SOT227

• IGBT Type: NPT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 58A
• Power - Max: 192W
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
• Current - Collector Cutoff (Max): 40µA
• Input Capacitance (Cies) @ Vce: 1.85nF @ 25V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: ISOTOP?

パッケージ: SOT-227-4, miniBLOC

APTC80H29T1G

Microsemi Corporation

MOSFET 4N-CH 800V 15A SP1

• FET Type: 4 N-Channel (H-Bridge)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 800V
• Current - Continuous Drain (Id) @ 25°C: 15A
• Rds On (Max) @ Id, Vgs: 290 mOhm @ 7.5A, 10V
• Vgs(th) (Max) @ Id: 3.9V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2254pF @ 25V
• Power - Max: 156W
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: SP1
• Supplier Device Package: SP1

パッケージ: SP1

MRF5812R2

Microsemi Corporation

RF TRANS NPN 18V 200MA 8SOIC

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 18V
• Frequency - Transition: 5GHz
• Noise Figure (dB Typ @ f): 2dB @ 500MHz
• Gain: 15.5dB
• Power - Max: 1.25W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
• Current - Collector (Ic) (Max): 200mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

パッケージ: 8-SOIC (0.154", 3.90mm Width)

SG2803J-883B

Microsemi Corporation

TRANS 8NPN DARL 50V 0.5A 18DIP

• Transistor Type: 8 NPN Darlington
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
• Current - Collector Cutoff (Max): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
• Power - Max: -
• Frequency - Transition: -
• Operating Temperature: -55°C ~ 125°C (TA)
• Mounting Type: Through Hole
• Package / Case: -
• Supplier Device Package: 18-CDIP

パッケージ: -

1PMT5923C/TR7

Microsemi Corporation

DIODE ZENER 8.2V 3W DO216AA

• Voltage - Zener (Nom) (Vz): 8.2V
• Tolerance: ±2%
• Power - Max: 3W
• Impedance (Max) (Zzt): 3.5 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 6.5V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-216AA
• Supplier Device Package: DO-216AA

パッケージ: DO-216AA

1EZ110D5/TR8

Microsemi Corporation

DIODE ZENER 110V 1W DO204AL

• Voltage - Zener (Nom) (Vz): 110V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 570 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 83.6V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

パッケージ: DO-204AL, DO-41, Axial

JANTXV1N3019DUR-1

Microsemi Corporation

DIODE ZENER 9.1V 1W DO213AB

• Voltage - Zener (Nom) (Vz): 9.1V
• Tolerance: ±1%
• Power - Max: 1W
• Impedance (Max) (Zzt): 6 Ohms
• Current - Reverse Leakage @ Vr: 25µA @ 6.9V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF (Glass)
• Supplier Device Package: DO-213AB (MELF, LL41)

パッケージ: DO-213AB, MELF (Glass)

JANTXV1N5523BUR-1

Microsemi Corporation

DIODE ZENER 5.1V 500MW DO213AA

• Voltage - Zener (Nom) (Vz): 5.1V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 26 Ohms
• Current - Reverse Leakage @ Vr: 2µA @ 2.5V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AA (Glass)
• Supplier Device Package: DO-213AA

パッケージ: DO-213AA (Glass)

CDLL3042A

Microsemi Corporation

DIODE ZENER 82V 1W DO213AB

• Voltage - Zener (Nom) (Vz): 82V
• Tolerance: ±10%
• Power - Max: 1W
• Impedance (Max) (Zzt): 200 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 62.2V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF
• Supplier Device Package: DO-213AB

パッケージ: DO-213AB, MELF

CDLL4101

Microsemi Corporation

DIODE ZENER 8.2V 500MW DO213AB

• Voltage - Zener (Nom) (Vz): 8.2V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 200 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 6.3V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF
• Supplier Device Package: DO-213AB

パッケージ: DO-213AB, MELF

1N5377BE3/TR8

Microsemi Corporation

DIODE ZENER 91V 5W T18

• Voltage - Zener (Nom) (Vz): 91V
• Tolerance: ±5%
• Power - Max: 5W
• Impedance (Max) (Zzt): 75 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 65.5V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: T-18, Axial
• Supplier Device Package: T-18

パッケージ: T-18, Axial

1PMT5929C/TR13

Microsemi Corporation

DIODE ZENER 15V 3W DO216AA

• Voltage - Zener (Nom) (Vz): 15V
• Tolerance: ±2%
• Power - Max: 3W
• Impedance (Max) (Zzt): 8 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 11.4V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-216AA
• Supplier Device Package: DO-216AA

パッケージ: DO-216AA

SMBJ5373C/TR13

Microsemi Corporation

DIODE ZENER 68V 5W SMBJ

• Voltage - Zener (Nom) (Vz): 68V
• Tolerance: ±2%
• Power - Max: 5W
• Impedance (Max) (Zzt): 44 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 49V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMBJ (DO-214AA)

パッケージ: DO-214AA, SMB

1PMT5946B/TR13

Microsemi Corporation

DIODE ZENER 75V 3W DO216AA

• Voltage - Zener (Nom) (Vz): 75V
• Tolerance: ±5%
• Power - Max: 3W
• Impedance (Max) (Zzt): 140 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 56V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-216AA
• Supplier Device Package: DO-216AA

パッケージ: DO-216AA

1PMT4132/TR7

Microsemi Corporation

DIODE ZENER 82V 1W DO216

• Voltage - Zener (Nom) (Vz): 82V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 250 Ohms
• Current - Reverse Leakage @ Vr: 10nA @ 62.32V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-216AA
• Supplier Device Package: DO-216

パッケージ: DO-216AA

SK19E3/TR13

Microsemi Corporation

DIODE SCHOTTKY 90V 1A DO214AA

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 90V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 800mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 90V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMBJ)
• Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: DO-214AA, SMB

UPS760/TR13

Microsemi Corporation

DIODE SCHOTTKY 60V 7A POWERMITE

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60V
• Current - Average Rectified (Io): 7A
• Voltage - Forward (Vf) (Max) @ If: 600mV @ 7A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100µA @ 60V
• Capacitance @ Vr, F: 375pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-216AA
• Supplier Device Package: Powermite
• Operating Temperature - Junction: -55°C ~ 125°C

パッケージ: DO-216AA

UFT7020A

Microsemi Corporation

DIODE MODULE 200V 35A

• Diode Configuration: 1 Pair Common Anode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io) (per Diode): 35A
• Voltage - Forward (Vf) (Max) @ If: 950mV @ 35A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 25µA @ 200V
• Operating Temperature - Junction: -
• Mounting Type: Screw Mount
• Package / Case: Module
• Supplier Device Package: Module

パッケージ: Module

EX64-TQG100A

Microsemi Corporation

IC FPGA 56 I/O 100TQFP

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: 128
• Total RAM Bits: -
• Number of I/O: 56
• Number of Gates: 3000
• Voltage - Supply: 2.3 V ~ 2.7 V
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 125°C (TA)
• Package / Case: 100-LQFP
• Supplier Device Package: 100-TQFP (14x14)

パッケージ: 100-LQFP

A3PE1500-FGG676

Microsemi Corporation

IC FPGA 444 I/O 676FBGA

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: -
• Total RAM Bits: 276480
• Number of I/O: 444
• Number of Gates: 1500000
• Voltage - Supply: 1.425 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: 0°C ~ 85°C (TJ)
• Package / Case: 676-BGA
• Supplier Device Package: 676-FBGA (27x27)

パッケージ: 676-BGA

M2GL025TS-VF400

Microsemi Corporation

IC FPGA 207 I/O 400VFBGA

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: 27696
• Total RAM Bits: 1130496
• Number of I/O: 207
• Number of Gates: -
• Voltage - Supply: 1.14 V ~ 2.625 V
• Mounting Type: Surface Mount
• Operating Temperature: 0°C ~ 85°C (TJ)
• Package / Case: 400-LFBGA
• Supplier Device Package: 400-VFBGA (17x17)

パッケージ: 400-LFBGA

JANTXV1N6169AUS

Microsemi Corporation

TVS DIODE 98.8VWM 178.8VC CPKG

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 98.8V
• Voltage - Breakdown (Min): 123.5V
• Voltage - Clamping (Max) @ Ipp: 178.8V
• Current - Peak Pulse (10/1000µs): 8.4A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SQ-MELF, C
• Supplier Device Package: C, SQ-MELF

パッケージ: SQ-MELF, C

M5KP28AE3

Microsemi Corporation

TVS DIODE 28VWM 45.4VC DO204AR

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 28V
• Voltage - Breakdown (Min): 31.1V
• Voltage - Clamping (Max) @ Ipp: 45.5V
• Current - Peak Pulse (10/1000µs): 110A
• Power - Peak Pulse: 5000W (5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AR, Axial
• Supplier Device Package: DO-204AR

パッケージ: DO-204AR, Axial

MXPLAD18KP8.5CA

Microsemi Corporation

TVS DIODE 137VC 132A PLAD

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 85V
• Voltage - Breakdown (Min): 94.4V
• Voltage - Clamping (Max) @ Ipp: 137V
• Current - Peak Pulse (10/1000µs): 132A
• Power - Peak Pulse: 18000W (18kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

パッケージ: Nonstandard SMD

MXPLAD6.5KP22CAE3

Microsemi Corporation

TVS DIODE 22VWM 35.5VC PLAD

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 22V
• Voltage - Breakdown (Min): 24.4V
• Voltage - Clamping (Max) @ Ipp: 35.5V
• Current - Peak Pulse (10/1000µs): 183A
• Power - Peak Pulse: 6500W (6.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

パッケージ: Nonstandard SMD

MASMBG64A

Microsemi Corporation

TVS DIODE 64VWM 103VC DO215AA

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 64V
• Voltage - Breakdown (Min): 71.1V
• Voltage - Clamping (Max) @ Ipp: 103V
• Current - Peak Pulse (10/1000µs): 5.8A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AA, SMB Gull Wing
• Supplier Device Package: SMBG (DO-215AA)

パッケージ: DO-215AA, SMB Gull Wing

MRF5812MR1

Microsemi Corporation

TRANS NPN 15V 200MA

• Transistor Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Frequency - Transition: -
• Noise Figure (dB Typ @ f): -
• Gain: -
• Power - Max: -
• DC Current Gain (hFE) (Min) @ Ic, Vce: -
• Current - Collector (Ic) (Max): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

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