Microsemi Corporation 製品

APT60M60JLL

Microsemi Corporation

MOSFET N-CH 600V 70A SOT-227

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 70A
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 5mA
• Gate Charge (Qg) (Max) @ Vgs: 289nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 12630pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 694W (Tc)
• Rds On (Max) @ Id, Vgs: 60 mOhm @ 35A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Supplier Device Package: ISOTOP?
• Package / Case: SOT-227-4, miniBLOC

パッケージ: SOT-227-4, miniBLOC

APT8020B2LLG

Microsemi Corporation

MOSFET N-CH 800V 38A T-MAX

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 800V
• Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 2.5mA
• Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 694W (Tc)
• Rds On (Max) @ Id, Vgs: 200 mOhm @ 19A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: T-MAX? [B2]
• Package / Case: TO-247-3 Variant

パッケージ: TO-247-3 Variant

APTC60HM70BT3G

Microsemi Corporation

MOSFET 4N-CH 600V 39A SP3

• FET Type: 4 N-Channel (H-Bridge)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 39A
• Rds On (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V
• Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
• Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
• Power - Max: 250W
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: SP3
• Supplier Device Package: SP3

パッケージ: SP3

JANTXV2N5005

Microsemi Corporation

TRANS PNP 80V 5A TO59

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 5A
• Voltage - Collector Emitter Breakdown (Max): 80V
• Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
• Current - Collector Cutoff (Max): 50µA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
• Power - Max: 2W
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Chassis, Stud Mount
• Package / Case: TO-210AA, TO-59-4, Stud
• Supplier Device Package: TO-59

パッケージ: TO-210AA, TO-59-4, Stud

JANTXV2N2326S

Microsemi Corporation

DIODE SILICON CTRL TO39

• Voltage - Off State: 200V
• Voltage - Gate Trigger (Vgt) (Max): 800mV
• Current - Gate Trigger (Igt) (Max): 200µA
• Voltage - On State (Vtm) (Max): -
• Current - On State (It (AV)) (Max): 220mA
• Current - On State (It (RMS)) (Max): -
• Current - Hold (Ih) (Max): 2mA
• Current - Off State (Max): -
• Current - Non Rep. Surge 50, 60Hz (Itsm): -
• SCR Type: Sensitive Gate
• Operating Temperature: -65°C ~ 125°C
• Mounting Type: Through Hole
• Package / Case: TO-205AD, TO-39-3 Metal Can
• Supplier Device Package: TO-39 (TO-205AD)

パッケージ: TO-205AD, TO-39-3 Metal Can

JAN1N4486DUS

Microsemi Corporation

DIODE ZENER 75V 1.5W D-5A

• Voltage - Zener (Nom) (Vz): 75V
• Tolerance: ±1%
• Power - Max: 1.5W
• Impedance (Max) (Zzt): 130 Ohms
• Current - Reverse Leakage @ Vr: 250nA @ 60V
• Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: SQ-MELF, A
• Supplier Device Package: D-5A

パッケージ: SQ-MELF, A

JANTXV1N4372CUR-1

Microsemi Corporation

DIODE ZENER 3V 500MW DO213AA

• Voltage - Zener (Nom) (Vz): 3V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 29 Ohms
• Current - Reverse Leakage @ Vr: 30µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AA (Glass)
• Supplier Device Package: DO-213AA

パッケージ: DO-213AA (Glass)

JAN1N4974CUS

Microsemi Corporation

DIODE ZENER 47V 5W D5B

• Voltage - Zener (Nom) (Vz): 47V
• Tolerance: ±2%
• Power - Max: 5W
• Impedance (Max) (Zzt): 25 Ohms
• Current - Reverse Leakage @ Vr: 2µA @ 35.8V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: SQ-MELF, E
• Supplier Device Package: D-5B

パッケージ: SQ-MELF, E

JANTX1N5541C-1

Microsemi Corporation

DIODE ZENER 22V 500MW DO35

• Voltage - Zener (Nom) (Vz): 22V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 100 Ohms
• Current - Reverse Leakage @ Vr: 10nA @ 19.8V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35 (DO-204AH)

パッケージ: DO-204AH, DO-35, Axial

SMBJ5947CE3/TR13

Microsemi Corporation

DIODE ZENER 82V 2W SMBJ

• Voltage - Zener (Nom) (Vz): 82V
• Tolerance: ±2%
• Power - Max: 2W
• Impedance (Max) (Zzt): 160 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 62.2V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMBJ (DO-214AA)

パッケージ: DO-214AA, SMB

1N5934BPE3/TR12

Microsemi Corporation

DIODE ZENER 24V 1.5W DO204AL

• Voltage - Zener (Nom) (Vz): 24V
• Tolerance: ±5%
• Power - Max: 1.5W
• Impedance (Max) (Zzt): 19 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 18.2V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

パッケージ: DO-204AL, DO-41, Axial

1PMT4114CE3/TR7

Microsemi Corporation

DIODE ZENER 20V 1W DO216

• Voltage - Zener (Nom) (Vz): 20V
• Tolerance: ±2%
• Power - Max: 1W
• Impedance (Max) (Zzt): 150 Ohms
• Current - Reverse Leakage @ Vr: 10nA @ 15.2V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-216AA
• Supplier Device Package: DO-216

パッケージ: DO-216AA

JANTX1N5520B-1

Microsemi Corporation

DIODE ZENER 3.9V 500MW DO35

• Voltage - Zener (Nom) (Vz): 3.9V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 22 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35

パッケージ: DO-204AH, DO-35, Axial

CDLL1A50

Microsemi Corporation

DIODE SCHOTTKY 50V 1A DO213AB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 600mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100µA @ 50V
• Capacitance @ Vr, F: 0.9pF @ 5V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF
• Supplier Device Package: DO-213AB
• Operating Temperature - Junction: -

パッケージ: DO-213AB, MELF

PD39100R-GGGG

Microsemi Corporation

POE PSE CONTROLLER

• Type: -
• Number of Channels: -
• Power - Max: -
• Internal Switch(s): -
• Auxiliary Sense: -
• Standards: -
• Voltage - Supply: -
• Current - Supply: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

M2S150-FCS536I

Microsemi Corporation

IC FPGA SOC 150K LUTS

• Architecture: MCU, FPGA
• Core Processor: ARM? Cortex?-M3
• Flash Size: 512KB
• RAM Size: 64KB
• Peripherals: DDR, PCIe, SERDES
• Connectivity: CAN, Ethernet, I2C, SPI, UART/USART, USB
• Speed: 166MHz
• Primary Attributes: FPGA - 150K Logic Modules
• Operating Temperature: -40°C ~ 100°C (TJ)
• Package / Case: 536-LFBGA
• Supplier Device Package: 536-BGA (16x16)

パッケージ: 536-LFBGA

A54SX08A-1PQG208

Microsemi Corporation

IC FPGA 130 I/O 208QFP

• Number of LABs/CLBs: 768
• Number of Logic Elements/Cells: -
• Total RAM Bits: -
• Number of I/O: 130
• Number of Gates: 12000
• Voltage - Supply: 2.25 V ~ 5.25 V
• Mounting Type: Surface Mount
• Operating Temperature: 0°C ~ 70°C (TA)
• Package / Case: 208-BFQFP
• Supplier Device Package: 208-PQFP (28x28)

パッケージ: 208-BFQFP

M1AGLE3000V5-FG484

Microsemi Corporation

IC FPGA 341 I/O 484FBGA

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: 75264
• Total RAM Bits: 516096
• Number of I/O: 341
• Number of Gates: 3000000
• Voltage - Supply: 1.425 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: 0°C ~ 70°C (TA)
• Package / Case: 484-BGA
• Supplier Device Package: 484-FPBGA (23x23)

パッケージ: 484-BGA

A3P1000-1PQ208M

Microsemi Corporation

IC FPGA 154 I/O 208QFP

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: -
• Total RAM Bits: 147456
• Number of I/O: 154
• Number of Gates: 1000000
• Voltage - Supply: 1.425 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 125°C (TJ)
• Package / Case: 208-BFQFP
• Supplier Device Package: 208-PQFP (28x28)

パッケージ: 208-BFQFP

M2GL060TS-1FGG484T2

Microsemi Corporation

IC FPGA 267 I/O 484FBGA

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: 56520
• Total RAM Bits: 1869824
• Number of I/O: 267
• Number of Gates: -
• Voltage - Supply: 1.14 V ~ 2.625 V
• Mounting Type: -
• Operating Temperature: -40°C ~ 125°C (TJ)
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

LXMG1811-05-61S

Microsemi Corporation

MOD INVERTER CCFL 6W 5V PROG

• Voltage - Input: 5V
• Output: 1650V
• Type: CCFL and UV Lamps
• Size / Dimension: 4.33" L x 0.63" W x 0.24" H (110mm x 16mm x 6mm)
• Mounting Type: Chassis Mount

パッケージ: -

MSMCGLCE7.0A

Microsemi Corporation

TVS DIODE 7VWM 12VC DO215AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 7V
• Voltage - Breakdown (Min): 7.78V
• Voltage - Clamping (Max) @ Ipp: 12V
• Current - Peak Pulse (10/1000µs): 100A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 100pF @ 1MHz
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AB, SMC Gull Wing
• Supplier Device Package: SMCG (DO-215AB)

パッケージ: DO-215AB, SMC Gull Wing

MLCE7.0AE3

Microsemi Corporation

TVS DIODE 7VWM 12VC CASE1

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 7V
• Voltage - Breakdown (Min): 7.78V
• Voltage - Clamping (Max) @ Ipp: 12V
• Current - Peak Pulse (10/1000µs): 100A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 100pF @ 1MHz
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: CASE-1

パッケージ: DO-201AA, DO-27, Axial

MXPLAD30KP90CA

Microsemi Corporation

TVS DIODE 90VWM 146VC PLAD

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 90V
• Voltage - Breakdown (Min): 100V
• Voltage - Clamping (Max) @ Ipp: 146V
• Current - Peak Pulse (10/1000µs): 204A
• Power - Peak Pulse: 30000W (30kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

パッケージ: Nonstandard SMD

MXPLAD36KP17CAE3

Microsemi Corporation

TVS DIODE 28.8VC 1.25KA PLAD

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 17V
• Voltage - Breakdown (Min): 18.9V
• Voltage - Clamping (Max) @ Ipp: 28.8V
• Current - Peak Pulse (10/1000µs): 1250A (1.25kA)
• Power - Peak Pulse: 36000W (36kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

パッケージ: Nonstandard SMD

SMBJ17AE3/TR13

Microsemi Corporation

TVS DIODE 17VWM 27.6VC SMBJ

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 17V
• Voltage - Breakdown (Min): 18.9V
• Voltage - Clamping (Max) @ Ipp: 27.6V
• Current - Peak Pulse (10/1000µs): 21.7A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMBJ (DO-214AA)

パッケージ: DO-214AA, SMB

SMAJ130E3/TR13

Microsemi Corporation

TVS DIODE 130VWM 231VC SMAJ

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 130V
• Voltage - Breakdown (Min): 144V
• Voltage - Clamping (Max) @ Ipp: 231V
• Current - Peak Pulse (10/1000µs): 2.2A
• Power - Peak Pulse: 500W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

パッケージ: DO-214AC, SMA

MX1DS10PE

Microsemi Corporation

EVALUATION BOARD

• Type: Prescaler
• Frequency: 50MHz ~ 15GHz
• For Use With/Related Products: MX1DS10P
• Supplied Contents: Board

パッケージ: -