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Microsemi Corporation 製品

レコード 46,511
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APT5010JVRU3
Microsemi Corporation

MOSFET N-CH 500V 44A SOT227

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 44A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 312nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7410pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 450W (Tc)
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 22A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227
  • Package / Case: SOT-227-4, miniBLOC
パッケージ: SOT-227-4, miniBLOC
在庫4,640
APT5014BLLG
Microsemi Corporation

MOSFET N-CH 500V 35A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3261pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 403W (Tc)
  • Rds On (Max) @ Id, Vgs: 140 mOhm @ 17.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 [B]
  • Package / Case: TO-247-3
パッケージ: TO-247-3
在庫6,176
JANTXV2N6351
Microsemi Corporation

TRANS NPN DARL 150V 5A TO-33

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 5A
  • Voltage - Collector Emitter Breakdown (Max): 150V
  • Vce Saturation (Max) @ Ib, Ic: 2.5V @ 10mA, 5A
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 5V
  • Power - Max: 1W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AC, TO-33-4 Metal Can
  • Supplier Device Package: TO-33
パッケージ: TO-205AC, TO-33-4 Metal Can
在庫7,936
JAN2N6308
Microsemi Corporation

TRANS NPN 350V 8A TO3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 8A
  • Voltage - Collector Emitter Breakdown (Max): 350V
  • Vce Saturation (Max) @ Ib, Ic: 5V @ 2.67A, 8A
  • Current - Collector Cutoff (Max): 50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 3A, 5V
  • Power - Max: 125W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-204AA (TO-3)
パッケージ: TO-204AA, TO-3
在庫7,632
1N5952BPE3/TR8
Microsemi Corporation

DIODE ZENER 130V 1.5W DO204AL

  • Voltage - Zener (Nom) (Vz): 130V
  • Tolerance: ±5%
  • Power - Max: 1.5W
  • Impedance (Max) (Zzt): 450 Ohms
  • Current - Reverse Leakage @ Vr: 1µA @ 98.8V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -65°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
パッケージ: DO-204AL, DO-41, Axial
在庫4,768
1N5338C/TR12
Microsemi Corporation

DIODE ZENER 5.1V 5W T18

  • Voltage - Zener (Nom) (Vz): 5.1V
  • Tolerance: ±2%
  • Power - Max: 5W
  • Impedance (Max) (Zzt): 1.5 Ohms
  • Current - Reverse Leakage @ Vr: 1µA @ 1V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
  • Operating Temperature: -65°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: T-18, Axial
  • Supplier Device Package: T-18
パッケージ: T-18, Axial
在庫2,416
2EZ130D5DO41E3
Microsemi Corporation

DIODE ZENER 130V 2W DO204AL

  • Voltage - Zener (Nom) (Vz): 130V
  • Tolerance: ±5%
  • Power - Max: 2W
  • Impedance (Max) (Zzt): 400 Ohms
  • Current - Reverse Leakage @ Vr: 500nA @ 98.8V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -65°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
パッケージ: DO-204AL, DO-41, Axial
在庫4,480
JANTX1N4473C
Microsemi Corporation

DIODE ZENER 22V 1.5W DO41

  • Voltage - Zener (Nom) (Vz): 22V
  • Tolerance: ±2%
  • Power - Max: 1.5W
  • Impedance (Max) (Zzt): 14 Ohms
  • Current - Reverse Leakage @ Vr: 50nA @ 17.6V
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
  • Operating Temperature: -65°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
パッケージ: DO-204AL, DO-41, Axial
在庫2,704
JANTXV1N3028B-1
Microsemi Corporation

DIODE ZENER 22V 1W DO41

  • Voltage - Zener (Nom) (Vz): 22V
  • Tolerance: ±5%
  • Power - Max: 1W
  • Impedance (Max) (Zzt): 23 Ohms
  • Current - Reverse Leakage @ Vr: 10µA @ 16.7V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -55°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
パッケージ: DO-204AL, DO-41, Axial
在庫4,832
JAN1N983CUR-1
Microsemi Corporation

DIODE ZENER 82V 500MW DO213AA

  • Voltage - Zener (Nom) (Vz): 82V
  • Tolerance: ±2%
  • Power - Max: 500mW
  • Impedance (Max) (Zzt): 330 Ohms
  • Current - Reverse Leakage @ Vr: 500nA @ 62V
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
  • Operating Temperature: -65°C ~ 175°C
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AA (Glass)
  • Supplier Device Package: DO-213AA
パッケージ: DO-213AA (Glass)
在庫2,256
JAN1N4104C-1
Microsemi Corporation

DIODE ZENER 10V DO35

  • Voltage - Zener (Nom) (Vz): 10V
  • Tolerance: ±2%
  • Power - Max: -
  • Impedance (Max) (Zzt): 200 Ohms
  • Current - Reverse Leakage @ Vr: 500nA @ 7.6V
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
  • Operating Temperature: -65°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35 (DO-204AH)
パッケージ: DO-204AH, DO-35, Axial
在庫3,696
3EZ39D2/TR8
Microsemi Corporation

DIODE ZENER 39V 3W DO204AL

  • Voltage - Zener (Nom) (Vz): 39V
  • Tolerance: ±2%
  • Power - Max: 3W
  • Impedance (Max) (Zzt): 28 Ohms
  • Current - Reverse Leakage @ Vr: 500nA @ 29.7V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -65°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
パッケージ: DO-204AL, DO-41, Axial
在庫3,936
2EZ33D10E3/TR12
Microsemi Corporation

DIODE ZENER 33V 2W DO204AL

  • Voltage - Zener (Nom) (Vz): 33V
  • Tolerance: ±10%
  • Power - Max: 2W
  • Impedance (Max) (Zzt): 23 Ohms
  • Current - Reverse Leakage @ Vr: 500nA @ 25.1V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -65°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
パッケージ: DO-204AL, DO-41, Axial
在庫7,296
1N824-E3
Microsemi Corporation

DIODE ZENER 6.2V 5% 0.5W DO-35

  • Voltage - Zener (Nom) (Vz): 6.2V
  • Tolerance: ±5%
  • Power - Max: 500mW
  • Impedance (Max) (Zzt): 15 Ohms
  • Current - Reverse Leakage @ Vr: 2µA @ 3V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35
パッケージ: DO-204AH, DO-35, Axial
在庫6,552
JANTXV1N6625U
Microsemi Corporation

DIODE GEN PURP 1KV 1A A-MELF

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.75V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 60ns
  • Current - Reverse Leakage @ Vr: 1µA @ 1000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, A
  • Supplier Device Package: D-5A
  • Operating Temperature - Junction: -65°C ~ 150°C
パッケージ: SQ-MELF, A
在庫3,248
JANTXV1N3766R
Microsemi Corporation

DIODE GEN PURP 800V 35A DO203AB

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 35A
  • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 110A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-5
  • Operating Temperature - Junction: -65°C ~ 175°C
パッケージ: DO-203AB, DO-5, Stud
在庫7,152
M2S150TS-FCG1152I
Microsemi Corporation

IC FPGA SOC 150K LUTS

  • Architecture: MCU, FPGA
  • Core Processor: ARM? Cortex?-M3
  • Flash Size: 512KB
  • RAM Size: 64KB
  • Peripherals: DDR, PCIe, SERDES
  • Connectivity: CAN, Ethernet, I2C, SPI, UART/USART, USB
  • Speed: 166MHz
  • Primary Attributes: FPGA - 150K Logic Modules
  • Operating Temperature: -40°C ~ 100°C (TJ)
  • Package / Case: 1152-BBGA, FCBGA
  • Supplier Device Package: 1152-FCBGA (35x35)
パッケージ: 1152-BBGA, FCBGA
在庫2,992
M2S050-1VFG400
Microsemi Corporation

IC FPGA SOC 50K LUTS 400VFBGA

  • Architecture: MCU, FPGA
  • Core Processor: ARM? Cortex?-M3
  • Flash Size: 256KB
  • RAM Size: 64KB
  • Peripherals: DDR, PCIe, SERDES
  • Connectivity: CAN, Ethernet, I2C, SPI, UART/USART, USB
  • Speed: 166MHz
  • Primary Attributes: FPGA - 50K Logic Modules
  • Operating Temperature: 0°C ~ 85°C (TJ)
  • Package / Case: 400-LFBGA
  • Supplier Device Package: 400-VFBGA (17x17)
パッケージ: 400-LFBGA
在庫5,824
M2GL025T-1FG484
Microsemi Corporation

IC FPGA 267 I/O 484FBGA

  • Number of LABs/CLBs: -
  • Number of Logic Elements/Cells: 27696
  • Total RAM Bits: 1130496
  • Number of I/O: 267
  • Number of Gates: -
  • Voltage - Supply: 1.14 V ~ 2.625 V
  • Mounting Type: Surface Mount
  • Operating Temperature: 0°C ~ 85°C (TJ)
  • Package / Case: 484-BGA
  • Supplier Device Package: 484-FPBGA (23x23)
パッケージ: 484-BGA
在庫6,656
MXPLAD30KP200A
Microsemi Corporation

TVS DIODE 200VWM 322VC PLAD

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 200V
  • Voltage - Breakdown (Min): 222V
  • Voltage - Clamping (Max) @ Ipp: 322V
  • Current - Peak Pulse (10/1000µs): 94A
  • Power - Peak Pulse: 30000W (30kW)
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Nonstandard SMD
  • Supplier Device Package: PLAD
パッケージ: Nonstandard SMD
在庫3,114
MX15KP130A
Microsemi Corporation

TVS DIODE 130VWM 209VC CASE5A

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 130V
  • Voltage - Breakdown (Min): 144V
  • Voltage - Clamping (Max) @ Ipp: 209V
  • Current - Peak Pulse (10/1000µs): 72A
  • Power - Peak Pulse: 15000W (15kW)
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: DO-204AR, Axial
  • Supplier Device Package: Case 5A (DO-204AR)
パッケージ: DO-204AR, Axial
在庫6,516
MXP5KE100CA
Microsemi Corporation

TVS DIODE 100VWM 162VC DO41

  • Type: Zener
  • Unidirectional Channels: -
  • Bidirectional Channels: 1
  • Voltage - Reverse Standoff (Typ): 100V
  • Voltage - Breakdown (Min): 111V
  • Voltage - Clamping (Max) @ Ipp: 162V
  • Current - Peak Pulse (10/1000µs): 3.1A
  • Power - Peak Pulse: 500W
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
パッケージ: DO-204AL, DO-41, Axial
在庫2,034
MXLSMCJ10CAE3
Microsemi Corporation

TVS DIODE 10VWM 17VC DO214AB

  • Type: Zener
  • Unidirectional Channels: -
  • Bidirectional Channels: 1
  • Voltage - Reverse Standoff (Typ): 10V
  • Voltage - Breakdown (Min): 11.1V
  • Voltage - Clamping (Max) @ Ipp: 17V
  • Current - Peak Pulse (10/1000µs): 88.2A
  • Power - Peak Pulse: 1500W (1.5kW)
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB (SMCJ)
パッケージ: DO-214AB, SMC
在庫7,884
MSMCG130CAE3
Microsemi Corporation

TVS DIODE 130VWM 209VC DO215AB

  • Type: Zener
  • Unidirectional Channels: -
  • Bidirectional Channels: 1
  • Voltage - Reverse Standoff (Typ): 130V
  • Voltage - Breakdown (Min): 144V
  • Voltage - Clamping (Max) @ Ipp: 209V
  • Current - Peak Pulse (10/1000µs): 7.2A
  • Power - Peak Pulse: 1500W (1.5kW)
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-215AB, SMC Gull Wing
  • Supplier Device Package: SMCG (DO-215AB)
パッケージ: DO-215AB, SMC Gull Wing
在庫3,492
MSMCG75AE3
Microsemi Corporation

TVS DIODE 75VWM 121VC DO215AB

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 75V
  • Voltage - Breakdown (Min): 83.3V
  • Voltage - Clamping (Max) @ Ipp: 121V
  • Current - Peak Pulse (10/1000µs): 12.4A
  • Power - Peak Pulse: 1500W (1.5kW)
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-215AB, SMC Gull Wing
  • Supplier Device Package: SMCG (DO-215AB)
パッケージ: DO-215AB, SMC Gull Wing
在庫8,280
SMDA03E3/TR7
Microsemi Corporation

TVS DIODE 3.3VWM 9VC 8SOIC

  • Type: Zener
  • Unidirectional Channels: 4
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 3.3V
  • Voltage - Breakdown (Min): 4V
  • Voltage - Clamping (Max) @ Ipp: 9V
  • Current - Peak Pulse (10/1000µs): 5A (8/20µs)
  • Power - Peak Pulse: 300W
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: 600pF @ 1MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
パッケージ: 8-SOIC (0.154", 3.90mm Width)
在庫4,302
SMBJ350AE3/TR13
Microsemi Corporation

TVS DIODE 350VWM SMBJ

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 350V
  • Voltage - Breakdown (Min): -
  • Voltage - Clamping (Max) @ Ipp: -
  • Current - Peak Pulse (10/1000µs): -
  • Power - Peak Pulse: 600W
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMBJ (DO-214AA)
パッケージ: DO-214AA, SMB
在庫3,888
SMBJ45CAE3/TR13
Microsemi Corporation

TVS DIODE 45VWM 72.7VC SMBJ

  • Type: Zener
  • Unidirectional Channels: -
  • Bidirectional Channels: 1
  • Voltage - Reverse Standoff (Typ): 45V
  • Voltage - Breakdown (Min): 50V
  • Voltage - Clamping (Max) @ Ipp: 72.7V
  • Current - Peak Pulse (10/1000µs): 8.3A
  • Power - Peak Pulse: 600W
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMBJ (DO-214AA)
パッケージ: DO-214AA, SMB
在庫5,148