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Microsemi Corporation 製品

レコード 46,511
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APTGT225DU170G
Microsemi Corporation

IGBT MOD TRENCH DUAL SOURCE SP6

  • IGBT Type: Trench Field Stop
  • Configuration: Dual, Common Source
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 340A
  • Power - Max: 1250W
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 225A
  • Current - Collector Cutoff (Max): 500µA
  • Input Capacitance (Cies) @ Vce: 20nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6
パッケージ: SP6
在庫7,312
APTGT50SK170T1G
Microsemi Corporation

IGBT 1700V 75A 312W SP1

  • IGBT Type: Trench Field Stop
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 75A
  • Power - Max: 312W
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: 4.4nF @ 25V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP1
  • Supplier Device Package: SP1
パッケージ: SP1
在庫3,680
hot APT30M70BVFRG
Microsemi Corporation

MOSFET N-CH 300V 48A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300V
  • Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5870pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 370W (Tc)
  • Rds On (Max) @ Id, Vgs: 70 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 [B]
  • Package / Case: TO-247-3
パッケージ: TO-247-3
在庫9,864
APTM60A23FT1G
Microsemi Corporation

MOSFET 2N-CH 600V 20A SP1

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 20A
  • Rds On (Max) @ Id, Vgs: 276 mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5316pF @ 25V
  • Power - Max: 208W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP1
  • Supplier Device Package: SP1
パッケージ: SP1
在庫7,520
3EZ4.3DE3/TR12
Microsemi Corporation

DIODE ZENER 4.3V 3W DO204AL

  • Voltage - Zener (Nom) (Vz): 4.3V
  • Tolerance: ±20%
  • Power - Max: 3W
  • Impedance (Max) (Zzt): 4.5 Ohms
  • Current - Reverse Leakage @ Vr: 30µA @ 1V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -65°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
パッケージ: DO-204AL, DO-41, Axial
在庫3,472
JANTX1N4132DUR-1
Microsemi Corporation

DIODE ZENER 82V 500MW DO213AA

  • Voltage - Zener (Nom) (Vz): 82V
  • Tolerance: ±1%
  • Power - Max: 500mW
  • Impedance (Max) (Zzt): 800 Ohms
  • Current - Reverse Leakage @ Vr: 10nA @ 62.4V
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
  • Operating Temperature: -65°C ~ 175°C
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AA (Glass)
  • Supplier Device Package: DO-213AA
パッケージ: DO-213AA (Glass)
在庫2,448
JANTX1N6344
Microsemi Corporation

DIODE ZENER 68V 500MW DO35

  • Voltage - Zener (Nom) (Vz): 68V
  • Tolerance: ±5%
  • Power - Max: 500mW
  • Impedance (Max) (Zzt): 155 Ohms
  • Current - Reverse Leakage @ Vr: 50nA @ 52V
  • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A
  • Operating Temperature: -65°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35
パッケージ: DO-204AH, DO-35, Axial
在庫3,456
JAN1N4578A-1
Microsemi Corporation

DIODE ZENER 6.4V 500MW DO35

  • Voltage - Zener (Nom) (Vz): 6.4V
  • Tolerance: ±5%
  • Power - Max: 500mW
  • Impedance (Max) (Zzt): 50 Ohms
  • Current - Reverse Leakage @ Vr: 2µA @ 3V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -65°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35 (DO-204AH)
パッケージ: DO-204AH, DO-35, Axial
在庫4,416
1N5924CE3/TR13
Microsemi Corporation

DIODE ZENER 9.1V 1.5W DO204AL

  • Voltage - Zener (Nom) (Vz): 9.1V
  • Tolerance: ±2%
  • Power - Max: 1.5W
  • Impedance (Max) (Zzt): 4 Ohms
  • Current - Reverse Leakage @ Vr: 5µA @ 7V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -65°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
パッケージ: DO-204AL, DO-41, Axial
在庫5,792
hot 1N821A
Microsemi Corporation

DIODE ZENER 6.2V 500MW DO7

  • Voltage - Zener (Nom) (Vz): 6.2V
  • Tolerance: ±5%
  • Power - Max: 500mW
  • Impedance (Max) (Zzt): 10 Ohms
  • Current - Reverse Leakage @ Vr: 2µA @ 3V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: DO-204AA, DO-7, Axial
  • Supplier Device Package: DO-7
パッケージ: DO-204AA, DO-7, Axial
在庫42,000
JANTX1N6624U
Microsemi Corporation

DIODE GEN PURP 900V 1A A-MELF

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 900V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.55V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 500nA @ 900V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, A
  • Supplier Device Package: D-5A
  • Operating Temperature - Junction: -65°C ~ 150°C
パッケージ: SQ-MELF, A
在庫6,448
HSM5100J/TR13
Microsemi Corporation

DIODE SCHOTTKY 100V 5A DO214AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 800mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 250µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB
  • Operating Temperature - Junction: -55°C ~ 175°C
パッケージ: DO-214AB, SMC
在庫5,888
UPS3100/TR13
Microsemi Corporation

DIODE SCHOTTKY 100V 3A POWERMITE

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 760mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200µA @ 100V
  • Capacitance @ Vr, F: 85pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-216AA
  • Supplier Device Package: Powermite
  • Operating Temperature - Junction: -55°C ~ 125°C
パッケージ: DO-216AA
在庫6,912
MBR20200FCTE3/TU
Microsemi Corporation

DIODE SCHOTTKY 20A 200V ITO220AB

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
パッケージ: -
在庫6,496
APTDF400AK120G
Microsemi Corporation

DIODE MODULE 1.2KV 470A SP6

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io) (per Diode): 470A
  • Voltage - Forward (Vf) (Max) @ If: 3V @ 400A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 385ns
  • Current - Reverse Leakage @ Vr: 250µA @ 1200V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: LP4
  • Supplier Device Package: SP6
パッケージ: LP4
在庫7,152
M1A3P600L-PQ208I
Microsemi Corporation

IC FPGA 154 I/O 208QFP

  • Number of LABs/CLBs: -
  • Number of Logic Elements/Cells: -
  • Total RAM Bits: 110592
  • Number of I/O: 154
  • Number of Gates: 600000
  • Voltage - Supply: 1.14V ~ 1.575 V
  • Mounting Type: Surface Mount
  • Operating Temperature: -40°C ~ 100°C (TJ)
  • Package / Case: 208-BFQFP
  • Supplier Device Package: 208-PQFP (28x28)
パッケージ: 208-BFQFP
在庫2,100
AGLE600V5-FGG256
Microsemi Corporation

IC FPGA 165 I/O 256FBGA

  • Number of LABs/CLBs: -
  • Number of Logic Elements/Cells: 13824
  • Total RAM Bits: 110592
  • Number of I/O: 165
  • Number of Gates: 600000
  • Voltage - Supply: 1.425 V ~ 1.575 V
  • Mounting Type: Surface Mount
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Package / Case: 256-LBGA
  • Supplier Device Package: 256-FPBGA (17x17)
パッケージ: 256-LBGA
在庫7,072
MP6KE33A
Microsemi Corporation

TVS DIODE 28.2VWM 45.7VC T18

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 28.2V
  • Voltage - Breakdown (Min): 31.4V
  • Voltage - Clamping (Max) @ Ipp: 45.7V
  • Current - Peak Pulse (10/1000µs): 13.2A
  • Power - Peak Pulse: 600W
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: T-18, Axial
  • Supplier Device Package: T-18
パッケージ: T-18, Axial
在庫3,906
MAP6KE11CA
Microsemi Corporation

TVS DIODE 9.4VWM 15.6VC T18

  • Type: Zener
  • Unidirectional Channels: -
  • Bidirectional Channels: 1
  • Voltage - Reverse Standoff (Typ): 9.4V
  • Voltage - Breakdown (Min): 10.5V
  • Voltage - Clamping (Max) @ Ipp: 15.6V
  • Current - Peak Pulse (10/1000µs): 38A
  • Power - Peak Pulse: 600W
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: T-18, Axial
  • Supplier Device Package: T-18
パッケージ: T-18, Axial
在庫7,380
JANTXV1N6144A
Microsemi Corporation

TVS DIODE 9.1VWM GPKG AXIAL

  • Type: Zener
  • Unidirectional Channels: -
  • Bidirectional Channels: 1
  • Voltage - Reverse Standoff (Typ): 9.1V
  • Voltage - Breakdown (Min): 11.4V
  • Voltage - Clamping (Max) @ Ipp: 16.9V
  • Current - Peak Pulse (10/1000µs): 88.8A
  • Power - Peak Pulse: 1500W (1.5kW)
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: G, Axial
  • Supplier Device Package: C, Axial
パッケージ: G, Axial
在庫8,604
JANTX1N6108
Microsemi Corporation

TVS DIODE 9.1VWM BPKG AXIAL

  • Type: Zener
  • Unidirectional Channels: -
  • Bidirectional Channels: 1
  • Voltage - Reverse Standoff (Typ): 9.1V
  • Voltage - Breakdown (Min): 10.83V
  • Voltage - Clamping (Max) @ Ipp: 17.75V
  • Current - Peak Pulse (10/1000µs): 28.12A
  • Power - Peak Pulse: 500W
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: B, Axial
  • Supplier Device Package: Axial
パッケージ: B, Axial
在庫6,678
MX1.5KE110A
Microsemi Corporation

TVS DIODE 94VWM 152VC CASE1

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 94V
  • Voltage - Breakdown (Min): 105V
  • Voltage - Clamping (Max) @ Ipp: 152V
  • Current - Peak Pulse (10/1000µs): 9.9A
  • Power - Peak Pulse: 1500W (1.5kW)
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: CASE-1
パッケージ: DO-201AA, DO-27, Axial
在庫2,880
MXL5KP30A
Microsemi Corporation

TVS DIODE 30VWM 48.4VC CASE5A

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 30V
  • Voltage - Breakdown (Min): 33.3V
  • Voltage - Clamping (Max) @ Ipp: 48.4V
  • Current - Peak Pulse (10/1000µs): 103A
  • Power - Peak Pulse: 5000W (5kW)
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: DO-204AR, Axial
  • Supplier Device Package: Case 5A (DO-204AR)
パッケージ: DO-204AR, Axial
在庫8,748
1N6115US
Microsemi Corporation

TVS DIODE 18.2VWM SQMELF

  • Type: Zener
  • Unidirectional Channels: -
  • Bidirectional Channels: 1
  • Voltage - Reverse Standoff (Typ): 18.2V
  • Voltage - Breakdown (Min): 21.66V
  • Voltage - Clamping (Max) @ Ipp: 34.97V
  • Current - Peak Pulse (10/1000µs): 14.25A
  • Power - Peak Pulse: 500W
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, B
  • Supplier Device Package: B, SQ-MELF
パッケージ: SQ-MELF, B
在庫5,094
MXLSMLJ54CA
Microsemi Corporation

TVS DIODE 54VWM 87.1VC DO214AB

  • Type: Zener
  • Unidirectional Channels: -
  • Bidirectional Channels: 1
  • Voltage - Reverse Standoff (Typ): 54V
  • Voltage - Breakdown (Min): 60V
  • Voltage - Clamping (Max) @ Ipp: 87.1V
  • Current - Peak Pulse (10/1000µs): 34.4A
  • Power - Peak Pulse: 3000W (3kW)
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB
パッケージ: DO-214AB, SMC
在庫6,084
MXLPLAD6.5KP85A
Microsemi Corporation

TVS DIODE 85VWM 137VC PLAD

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 85V
  • Voltage - Breakdown (Min): 94.4V
  • Voltage - Clamping (Max) @ Ipp: 137V
  • Current - Peak Pulse (10/1000µs): 47.5A
  • Power - Peak Pulse: 6500W (6.5kW)
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Nonstandard SMD
  • Supplier Device Package: PLAD
パッケージ: Nonstandard SMD
在庫8,388
MASMLJ9.0AE3
Microsemi Corporation

TVS DIODE 9VWM 15.4VC DO214AB

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 9V
  • Voltage - Breakdown (Min): 10V
  • Voltage - Clamping (Max) @ Ipp: 15.4V
  • Current - Peak Pulse (10/1000µs): 194.8A
  • Power - Peak Pulse: 3000W (3kW)
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB
パッケージ: DO-214AB, SMC
在庫4,266
SMCG5657/TR13
Microsemi Corporation

TVS DIODE 81VWM 144VC DO215AB

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 81V
  • Voltage - Breakdown (Min): 90V
  • Voltage - Clamping (Max) @ Ipp: 144V
  • Current - Peak Pulse (10/1000µs): -
  • Power - Peak Pulse: 1500W (1.5kW)
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-215AB, SMC Gull Wing
  • Supplier Device Package: DO-215AB (SMCG)
パッケージ: DO-215AB, SMC Gull Wing
在庫5,202
SMCG5634AE3/TR13
Microsemi Corporation

TVS DIODE 9.4VWM 15.6VC DO215AB

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 9.4V
  • Voltage - Breakdown (Min): 10.5V
  • Voltage - Clamping (Max) @ Ipp: 15.6V
  • Current - Peak Pulse (10/1000µs): -
  • Power - Peak Pulse: 1500W (1.5kW)
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-215AB, SMC Gull Wing
  • Supplier Device Package: DO-215AB (SMCG)
パッケージ: DO-215AB, SMC Gull Wing
在庫2,934
MPLAD30KP350A
Microsemi Corporation

TVS DIODE 350VWM 564VC PLAD

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 350V
  • Voltage - Breakdown (Min): 389V
  • Voltage - Clamping (Max) @ Ipp: 564V
  • Current - Peak Pulse (10/1000µs): 53A
  • Power - Peak Pulse: 30000W (30kW)
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Nonstandard SMD
  • Supplier Device Package: PLAD
パッケージ: Nonstandard SMD
在庫6,324