ページ 94 - Microsemi Corporation 製品

部品番号	メーカ	説明	パッケージ	在庫
APT20M19JVR	Microsemi Corporation	MOSFET N-CH 200V 112A SOT-227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 112A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 495nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11640pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 19 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: ISOTOP? Package / Case: SOT-227-4, miniBLOC	パッケージ: SOT-227-4, miniBLOC	在庫6,800
APTM100SK33T1G	Microsemi Corporation	MOSFET N-CH 1000V 23A SP1 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 23A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 305nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7868pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 390W (Tc) Rds On (Max) @ Id, Vgs: 396 mOhm @ 18A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP1 Package / Case: SP1	パッケージ: SP1	在庫3,056
APT26F120L	Microsemi Corporation	MOSFET N-CH 1200V 27A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9670pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1135W (Tc) Rds On (Max) @ Id, Vgs: 650 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 [L] Package / Case: TO-264-3, TO-264AA	パッケージ: TO-264-3, TO-264AA	在庫7,408
JAN2N5683	Microsemi Corporation	TRANS NPN 60V 50A TO-3 Transistor Type: NPN Current - Collector (Ic) (Max): 50A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 5V @ 10A, 50A Current - Collector Cutoff (Max): 5µA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 25A, 2V Power - Max: 300W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-3 (TO-204AA)	パッケージ: TO-204AA, TO-3	在庫7,760
JANTX2N918UB	Microsemi Corporation	TRANS NPN 15V 0.05A Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 15V Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V Power - Max: 200mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Supplier Device Package: UB	パッケージ: 4-SMD, No Lead	在庫4,256
MS2N4931	Microsemi Corporation	TRANS PNP TO-39 Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫4,528
MRF581G	Microsemi Corporation	TRANS NPN 18V 200MA MACRO X Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 18V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz Gain: 13dB ~ 15.5dB Power - Max: 1.25W DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V Current - Collector (Ic) (Max): 200mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: Micro-X ceramic (84C) Supplier Device Package: Micro-X ceramic (84C)	パッケージ: Micro-X ceramic (84C)	在庫250,548
1N5382A/TR12	Microsemi Corporation	DIODE ZENER 140V 5W T18 Voltage - Zener (Nom) (Vz): 140V Tolerance: ±10% Power - Max: 5W Impedance (Max) (Zzt): 230 Ohms Current - Reverse Leakage @ Vr: 500nA @ 101V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A Operating Temperature: -65°C ~ 150°C Mounting Type: Through Hole Package / Case: T-18, Axial Supplier Device Package: T-18	パッケージ: T-18, Axial	在庫2,528
JANTXV1N3019D-1	Microsemi Corporation	DIODE ZENER 9.1V 1W DO41 Voltage - Zener (Nom) (Vz): 9.1V Tolerance: ±1% Power - Max: 1W Impedance (Max) (Zzt): 6 Ohms Current - Reverse Leakage @ Vr: 25µA @ 6.9V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41	パッケージ: DO-204AL, DO-41, Axial	在庫5,792
1N3005A	Microsemi Corporation	DIODE ZENER 100V 10W DO213AA Voltage - Zener (Nom) (Vz): 100V Tolerance: ±5% Power - Max: 10W Impedance (Max) (Zzt): 40 Ohms Current - Reverse Leakage @ Vr: 10µA @ 76V Voltage - Forward (Vf) (Max) @ If: 1.5V @ 2A Operating Temperature: -65°C ~ 175°C Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-213AA	パッケージ: DO-203AA, DO-4, Stud	在庫2,448
JAN1N982C-1	Microsemi Corporation	DIODE ZENER 75V 500MW DO35 Voltage - Zener (Nom) (Vz): 75V Tolerance: ±2% Power - Max: 500mW Impedance (Max) (Zzt): 270 Ohms Current - Reverse Leakage @ Vr: 500nA @ 56V Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA Operating Temperature: -65°C ~ 175°C Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 (DO-204AH)	パッケージ: DO-204AH, DO-35, Axial	在庫6,112
1PMT5956C/TR13	Microsemi Corporation	DIODE ZENER 200V 3W DO216AA Voltage - Zener (Nom) (Vz): 200V Tolerance: ±2% Power - Max: 3W Impedance (Max) (Zzt): 1200 Ohms Current - Reverse Leakage @ Vr: 1µA @ 152V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: DO-216AA Supplier Device Package: DO-216AA	パッケージ: DO-216AA	在庫6,816
1PMT5952/TR7	Microsemi Corporation	DIODE ZENER 130V 3W DO216AA Voltage - Zener (Nom) (Vz): 130V Tolerance: ±20% Power - Max: 3W Impedance (Max) (Zzt): 450 Ohms Current - Reverse Leakage @ Vr: 1µA @ 98.8V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: DO-216AA Supplier Device Package: DO-216AA	パッケージ: DO-216AA	在庫4,464
3EZ68D5E3/TR12	Microsemi Corporation	DIODE ZENER 68V 3W DO204AL Voltage - Zener (Nom) (Vz): 68V Tolerance: ±5% Power - Max: 3W Impedance (Max) (Zzt): 70 Ohms Current - Reverse Leakage @ Vr: 500nA @ 51.7V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -65°C ~ 150°C Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41)	パッケージ: DO-204AL, DO-41, Axial	在庫3,024
APTDC10H601G	Microsemi Corporation	RECT BRIDGE 10A 600V SP1 Diode Type: Single Phase Technology: Silicon Carbide Schottky Voltage - Peak Reverse (Max): 600V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A Current - Reverse Leakage @ Vr: 200µA @ 600V Operating Temperature: - Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	パッケージ: SP1	在庫4,752
SG7815K-883B	Microsemi Corporation	IC REG LINEAR 15V 1.5A TO3 Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 35V Voltage - Output (Min/Fixed): 15V Voltage - Output (Max): - Voltage Dropout (Max): 2.5V @ 1A Current - Output: 1.5A Current - Quiescent (Iq): - Current - Supply (Max): 7mA PSRR: 60dB (120Hz) Control Features: - Protection Features: Over Current, Over Temperature Operating Temperature: -55°C ~ 125°C Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3	パッケージ: TO-3P-3, SC-65-3	在庫7,824
M2S090-FCS325I	Microsemi Corporation	IC FPGA SOC 90K LUTS Architecture: MCU, FPGA Core Processor: ARM? Cortex?-M3 Flash Size: 512KB RAM Size: 64KB Peripherals: DDR, PCIe, SERDES Connectivity: CAN, Ethernet, I2C, SPI, UART/USART, USB Speed: 166MHz Primary Attributes: FPGA - 90K Logic Modules Operating Temperature: -40°C ~ 100°C (TJ) Package / Case: 325-TFBGA Supplier Device Package: 325-BGA (11x11)	パッケージ: 325-TFBGA	在庫3,248
M2GL090TS-FG484	Microsemi Corporation	IC FPGA 267 I/O 484FBGA Number of LABs/CLBs: - Number of Logic Elements/Cells: 86184 Total RAM Bits: 2648064 Number of I/O: 267 Number of Gates: - Voltage - Supply: 1.14 V ~ 2.625 V Mounting Type: Surface Mount Operating Temperature: 0°C ~ 85°C (TJ) Package / Case: 484-BGA Supplier Device Package: 484-FPBGA (23x23)	パッケージ: 484-BGA	在庫6,848
M1A3P1000L-1FGG256	Microsemi Corporation	IC FPGA 177 I/O 256FBGA Number of LABs/CLBs: - Number of Logic Elements/Cells: - Total RAM Bits: 147456 Number of I/O: 177 Number of Gates: 1000000 Voltage - Supply: 1.14V ~ 1.575 V Mounting Type: Surface Mount Operating Temperature: 0°C ~ 85°C (TJ) Package / Case: 256-LBGA Supplier Device Package: 256-FPBGA (17x17)	パッケージ: 256-LBGA	在庫4,000
MRT100KP160CAE3	Microsemi Corporation	TVS DIODE 160VWM 315VC CASE5A Type: Zener Unidirectional Channels: - Bidirectional Channels: 1 Voltage - Reverse Standoff (Typ): 160V Voltage - Breakdown (Min): 178V Voltage - Clamping (Max) @ Ipp: 315V Current - Peak Pulse (10/1000µs): - Power - Peak Pulse: 100000W (100kW) Power Line Protection: No Applications: General Purpose Capacitance @ Frequency: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AR, Axial Supplier Device Package: Case 5A (DO-204AR)	パッケージ: DO-204AR, Axial	在庫7,866
MP6KE36AE3	Microsemi Corporation	TVS DIODE 30.8VWM 49.9VC T18 Type: Zener Unidirectional Channels: 1 Bidirectional Channels: - Voltage - Reverse Standoff (Typ): 30.8V Voltage - Breakdown (Min): 34.2V Voltage - Clamping (Max) @ Ipp: 49.9V Current - Peak Pulse (10/1000µs): 12A Power - Peak Pulse: 600W Power Line Protection: No Applications: General Purpose Capacitance @ Frequency: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: T-18, Axial Supplier Device Package: T-18	パッケージ: T-18, Axial	在庫4,644
MLCE60A	Microsemi Corporation	TVS DIODE 60VWM 96.8VC CASE1 Type: Zener Unidirectional Channels: 1 Bidirectional Channels: - Voltage - Reverse Standoff (Typ): 60V Voltage - Breakdown (Min): 66.7V Voltage - Clamping (Max) @ Ipp: 96.8V Current - Peak Pulse (10/1000µs): 15.5A Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Applications: General Purpose Capacitance @ Frequency: 90pF @ 1MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Supplier Device Package: CASE-1	パッケージ: DO-201AA, DO-27, Axial	在庫7,812
MASMCJLCE8.5AE3	Microsemi Corporation	TVS DIODE 8.5VWM 14.4VC DO215AB Type: Zener Unidirectional Channels: 1 Bidirectional Channels: - Voltage - Reverse Standoff (Typ): 8.5V Voltage - Breakdown (Min): 9.44V Voltage - Clamping (Max) @ Ipp: 14.4V Current - Peak Pulse (10/1000µs): 100A Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Applications: General Purpose Capacitance @ Frequency: 100pF @ 1MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMCJ)	パッケージ: DO-214AB, SMC	在庫3,474
MXLPLAD30KP85CA	Microsemi Corporation	TVS DIODE 85VWM 137VC PLAD Type: Zener Unidirectional Channels: - Bidirectional Channels: 1 Voltage - Reverse Standoff (Typ): 85V Voltage - Breakdown (Min): 94.4V Voltage - Clamping (Max) @ Ipp: 137V Current - Peak Pulse (10/1000µs): 216A Power - Peak Pulse: 30000W (30kW) Power Line Protection: No Applications: General Purpose Capacitance @ Frequency: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Nonstandard SMD Supplier Device Package: PLAD	パッケージ: Nonstandard SMD	在庫2,160
MX1.5KE47A	Microsemi Corporation	TVS DIODE 40.2VWM 64.8VC CASE1 Type: Zener Unidirectional Channels: 1 Bidirectional Channels: - Voltage - Reverse Standoff (Typ): 40.2V Voltage - Breakdown (Min): 44.7V Voltage - Clamping (Max) @ Ipp: 64.8V Current - Peak Pulse (10/1000µs): 23.2A Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Applications: General Purpose Capacitance @ Frequency: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Supplier Device Package: CASE-1	パッケージ: DO-201AA, DO-27, Axial	在庫4,212
MX1.5KE27AE3	Microsemi Corporation	TVS DIODE 23.1VWM 37.5VC CASE1 Type: Zener Unidirectional Channels: 1 Bidirectional Channels: - Voltage - Reverse Standoff (Typ): 23.1V Voltage - Breakdown (Min): 25.7V Voltage - Clamping (Max) @ Ipp: 37.5V Current - Peak Pulse (10/1000µs): 40A Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Applications: General Purpose Capacitance @ Frequency: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Supplier Device Package: CASE-1	パッケージ: DO-201AA, DO-27, Axial	在庫2,268
1N6038A	Microsemi Corporation	TVS DIODE 7.5VWM 13.4VC DO13 Type: Zener Unidirectional Channels: - Bidirectional Channels: 1 Voltage - Reverse Standoff (Typ): 7.5V Voltage - Breakdown (Min): 8.65V Voltage - Clamping (Max) @ Ipp: 13.4V Current - Peak Pulse (10/1000µs): 112A Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Applications: General Purpose Capacitance @ Frequency: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: DO-13 Supplier Device Package: DO-13	パッケージ: DO-13	在庫6,408
MSMCG14A	Microsemi Corporation	TVS DIODE 14VWM 23.2VC DO215AB Type: Zener Unidirectional Channels: 1 Bidirectional Channels: - Voltage - Reverse Standoff (Typ): 14V Voltage - Breakdown (Min): 15.6V Voltage - Clamping (Max) @ Ipp: 23.2V Current - Peak Pulse (10/1000µs): 64.7A Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Applications: General Purpose Capacitance @ Frequency: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DO-215AB, SMC Gull Wing Supplier Device Package: SMCG (DO-215AB)	パッケージ: DO-215AB, SMC Gull Wing	在庫3,672

APT20M19JVR

Microsemi Corporation

MOSFET N-CH 200V 112A SOT-227

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 112A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 495nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 11640pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 19 mOhm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: ISOTOP?
Package / Case: SOT-227-4, miniBLOC

パッケージ: SOT-227-4, miniBLOC

在庫6,800

APTM100SK33T1G

Microsemi Corporation

MOSFET N-CH 1000V 23A SP1

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000V
Current - Continuous Drain (Id) @ 25°C: 23A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 305nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7868pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 390W (Tc)
Rds On (Max) @ Id, Vgs: 396 mOhm @ 18A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SP1
Package / Case: SP1

パッケージ: SP1

在庫3,056

APT26F120L

Microsemi Corporation

MOSFET N-CH 1200V 27A TO-264

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 9670pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 1135W (Tc)
Rds On (Max) @ Id, Vgs: 650 mOhm @ 14A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-264 [L]
Package / Case: TO-264-3, TO-264AA

パッケージ: TO-264-3, TO-264AA

在庫7,408

JAN2N5683

Microsemi Corporation

TRANS NPN 60V 50A TO-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 50A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 5V @ 10A, 50A
Current - Collector Cutoff (Max): 5µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 25A, 2V
Power - Max: 300W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-3 (TO-204AA)

パッケージ: TO-204AA, TO-3

在庫7,760

JANTX2N918UB

Microsemi Corporation

TRANS NPN 15V 0.05A

Transistor Type: NPN
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 15V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V
Power - Max: 200mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Supplier Device Package: UB

パッケージ: 4-SMD, No Lead

在庫4,256

MS2N4931

Microsemi Corporation

TRANS PNP TO-39

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫4,528

MRF581G

Microsemi Corporation

TRANS NPN 18V 200MA MACRO X

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 18V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz
Gain: 13dB ~ 15.5dB
Power - Max: 1.25W
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
Current - Collector (Ic) (Max): 200mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Micro-X ceramic (84C)
Supplier Device Package: Micro-X ceramic (84C)

パッケージ: Micro-X ceramic (84C)

在庫250,548

1N5382A/TR12

Microsemi Corporation

DIODE ZENER 140V 5W T18

Voltage - Zener (Nom) (Vz): 140V
Tolerance: ±10%
Power - Max: 5W
Impedance (Max) (Zzt): 230 Ohms
Current - Reverse Leakage @ Vr: 500nA @ 101V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Operating Temperature: -65°C ~ 150°C
Mounting Type: Through Hole
Package / Case: T-18, Axial
Supplier Device Package: T-18

パッケージ: T-18, Axial

在庫2,528

JANTXV1N3019D-1

Microsemi Corporation

DIODE ZENER 9.1V 1W DO41

Voltage - Zener (Nom) (Vz): 9.1V
Tolerance: ±1%
Power - Max: 1W
Impedance (Max) (Zzt): 6 Ohms
Current - Reverse Leakage @ Vr: 25µA @ 6.9V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41

パッケージ: DO-204AL, DO-41, Axial

在庫5,792

1N3005A

Microsemi Corporation

DIODE ZENER 100V 10W DO213AA

Voltage - Zener (Nom) (Vz): 100V
Tolerance: ±5%
Power - Max: 10W
Impedance (Max) (Zzt): 40 Ohms
Current - Reverse Leakage @ Vr: 10µA @ 76V
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 2A
Operating Temperature: -65°C ~ 175°C
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-213AA

パッケージ: DO-203AA, DO-4, Stud

在庫2,448

JAN1N982C-1

Microsemi Corporation

DIODE ZENER 75V 500MW DO35

Voltage - Zener (Nom) (Vz): 75V
Tolerance: ±2%
Power - Max: 500mW
Impedance (Max) (Zzt): 270 Ohms
Current - Reverse Leakage @ Vr: 500nA @ 56V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35 (DO-204AH)

パッケージ: DO-204AH, DO-35, Axial

在庫6,112

1PMT5956C/TR13

Microsemi Corporation

DIODE ZENER 200V 3W DO216AA

Voltage - Zener (Nom) (Vz): 200V
Tolerance: ±2%
Power - Max: 3W
Impedance (Max) (Zzt): 1200 Ohms
Current - Reverse Leakage @ Vr: 1µA @ 152V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-216AA
Supplier Device Package: DO-216AA

パッケージ: DO-216AA

在庫6,816

1PMT5952/TR7

Microsemi Corporation

DIODE ZENER 130V 3W DO216AA

Voltage - Zener (Nom) (Vz): 130V
Tolerance: ±20%
Power - Max: 3W
Impedance (Max) (Zzt): 450 Ohms
Current - Reverse Leakage @ Vr: 1µA @ 98.8V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-216AA
Supplier Device Package: DO-216AA

パッケージ: DO-216AA

在庫4,464

3EZ68D5E3/TR12

Microsemi Corporation

DIODE ZENER 68V 3W DO204AL

Voltage - Zener (Nom) (Vz): 68V
Tolerance: ±5%
Power - Max: 3W
Impedance (Max) (Zzt): 70 Ohms
Current - Reverse Leakage @ Vr: 500nA @ 51.7V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)

パッケージ: DO-204AL, DO-41, Axial

在庫3,024

APTDC10H601G

Microsemi Corporation

RECT BRIDGE 10A 600V SP1

Diode Type: Single Phase
Technology: Silicon Carbide Schottky
Voltage - Peak Reverse (Max): 600V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
Current - Reverse Leakage @ Vr: 200µA @ 600V
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1

パッケージ: SP1

在庫4,752

SG7815K-883B

Microsemi Corporation

IC REG LINEAR 15V 1.5A TO3

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 35V
Voltage - Output (Min/Fixed): 15V
Voltage - Output (Max): -
Voltage Dropout (Max): 2.5V @ 1A
Current - Output: 1.5A
Current - Quiescent (Iq): -
Current - Supply (Max): 7mA
PSRR: 60dB (120Hz)
Control Features: -
Protection Features: Over Current, Over Temperature
Operating Temperature: -55°C ~ 125°C
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3

パッケージ: TO-3P-3, SC-65-3

在庫7,824

M2S090-FCS325I

Microsemi Corporation

IC FPGA SOC 90K LUTS

Architecture: MCU, FPGA
Core Processor: ARM? Cortex?-M3
Flash Size: 512KB
RAM Size: 64KB
Peripherals: DDR, PCIe, SERDES
Connectivity: CAN, Ethernet, I2C, SPI, UART/USART, USB
Speed: 166MHz
Primary Attributes: FPGA - 90K Logic Modules
Operating Temperature: -40°C ~ 100°C (TJ)
Package / Case: 325-TFBGA
Supplier Device Package: 325-BGA (11x11)

パッケージ: 325-TFBGA

在庫3,248

M2GL090TS-FG484

Microsemi Corporation

IC FPGA 267 I/O 484FBGA

Number of LABs/CLBs: -
Number of Logic Elements/Cells: 86184
Total RAM Bits: 2648064
Number of I/O: 267
Number of Gates: -
Voltage - Supply: 1.14 V ~ 2.625 V
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 85°C (TJ)
Package / Case: 484-BGA
Supplier Device Package: 484-FPBGA (23x23)

パッケージ: 484-BGA

在庫6,848

M1A3P1000L-1FGG256

Microsemi Corporation

IC FPGA 177 I/O 256FBGA

Number of LABs/CLBs: -
Number of Logic Elements/Cells: -
Total RAM Bits: 147456
Number of I/O: 177
Number of Gates: 1000000
Voltage - Supply: 1.14V ~ 1.575 V
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 85°C (TJ)
Package / Case: 256-LBGA
Supplier Device Package: 256-FPBGA (17x17)

パッケージ: 256-LBGA

在庫4,000

MRT100KP160CAE3

Microsemi Corporation

TVS DIODE 160VWM 315VC CASE5A

Type: Zener
Unidirectional Channels: -
Bidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 160V
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 315V
Current - Peak Pulse (10/1000µs): -
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Applications: General Purpose
Capacitance @ Frequency: -
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AR, Axial
Supplier Device Package: Case 5A (DO-204AR)

パッケージ: DO-204AR, Axial

在庫7,866

MP6KE36AE3

Microsemi Corporation

TVS DIODE 30.8VWM 49.9VC T18

Type: Zener
Unidirectional Channels: 1
Bidirectional Channels: -
Voltage - Reverse Standoff (Typ): 30.8V
Voltage - Breakdown (Min): 34.2V
Voltage - Clamping (Max) @ Ipp: 49.9V
Current - Peak Pulse (10/1000µs): 12A
Power - Peak Pulse: 600W
Power Line Protection: No
Applications: General Purpose
Capacitance @ Frequency: -
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: T-18, Axial
Supplier Device Package: T-18

パッケージ: T-18, Axial

在庫4,644

MLCE60A

Microsemi Corporation

TVS DIODE 60VWM 96.8VC CASE1

Type: Zener
Unidirectional Channels: 1
Bidirectional Channels: -
Voltage - Reverse Standoff (Typ): 60V
Voltage - Breakdown (Min): 66.7V
Voltage - Clamping (Max) @ Ipp: 96.8V
Current - Peak Pulse (10/1000µs): 15.5A
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Supplier Device Package: CASE-1

パッケージ: DO-201AA, DO-27, Axial

在庫7,812

MASMCJLCE8.5AE3

Microsemi Corporation

TVS DIODE 8.5VWM 14.4VC DO215AB

Type: Zener
Unidirectional Channels: 1
Bidirectional Channels: -
Voltage - Reverse Standoff (Typ): 8.5V
Voltage - Breakdown (Min): 9.44V
Voltage - Clamping (Max) @ Ipp: 14.4V
Current - Peak Pulse (10/1000µs): 100A
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Applications: General Purpose
Capacitance @ Frequency: 100pF @ 1MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMCJ)

パッケージ: DO-214AB, SMC

在庫3,474

MXLPLAD30KP85CA

Microsemi Corporation

TVS DIODE 85VWM 137VC PLAD

Type: Zener
Unidirectional Channels: -
Bidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 85V
Voltage - Breakdown (Min): 94.4V
Voltage - Clamping (Max) @ Ipp: 137V
Current - Peak Pulse (10/1000µs): 216A
Power - Peak Pulse: 30000W (30kW)
Power Line Protection: No
Applications: General Purpose
Capacitance @ Frequency: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Nonstandard SMD
Supplier Device Package: PLAD

パッケージ: Nonstandard SMD

在庫2,160

MX1.5KE47A

Microsemi Corporation

TVS DIODE 40.2VWM 64.8VC CASE1

Type: Zener
Unidirectional Channels: 1
Bidirectional Channels: -
Voltage - Reverse Standoff (Typ): 40.2V
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Current - Peak Pulse (10/1000µs): 23.2A
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Applications: General Purpose
Capacitance @ Frequency: -
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Supplier Device Package: CASE-1

パッケージ: DO-201AA, DO-27, Axial

在庫4,212

MX1.5KE27AE3

Microsemi Corporation

TVS DIODE 23.1VWM 37.5VC CASE1

Type: Zener
Unidirectional Channels: 1
Bidirectional Channels: -
Voltage - Reverse Standoff (Typ): 23.1V
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 37.5V
Current - Peak Pulse (10/1000µs): 40A
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Applications: General Purpose
Capacitance @ Frequency: -
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Supplier Device Package: CASE-1

パッケージ: DO-201AA, DO-27, Axial

在庫2,268

1N6038A

Microsemi Corporation

TVS DIODE 7.5VWM 13.4VC DO13

Type: Zener
Unidirectional Channels: -
Bidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 7.5V
Voltage - Breakdown (Min): 8.65V
Voltage - Clamping (Max) @ Ipp: 13.4V
Current - Peak Pulse (10/1000µs): 112A
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Applications: General Purpose
Capacitance @ Frequency: -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-13
Supplier Device Package: DO-13

パッケージ: DO-13

在庫6,408

MSMCG14A

Microsemi Corporation

TVS DIODE 14VWM 23.2VC DO215AB

Type: Zener
Unidirectional Channels: 1
Bidirectional Channels: -
Voltage - Reverse Standoff (Typ): 14V
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Current - Peak Pulse (10/1000µs): 64.7A
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Applications: General Purpose
Capacitance @ Frequency: -
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-215AB, SMC Gull Wing
Supplier Device Package: SMCG (DO-215AB)

パッケージ: DO-215AB, SMC Gull Wing

在庫3,672