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部品番号	メーカ	説明	パッケージ	在庫	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
MURA215T3G	ON Semiconductor	DIODE GEN PURPOSE 150V 2A SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 950mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 2µA @ 150V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: DO-214AC, SMA	在庫1,920,000	150V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	2µA @ 150V	-	Surface Mount	DO-214AC, SMA	SMA	-65°C ~ 175°C
1N5407RLG	ON Semiconductor	DIODE GEN PURP 800V 3A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 800V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Supplier Device Package: Axial Operating Temperature - Junction: -65°C ~ 150°C	パッケージ: DO-201AA, DO-27, Axial	在庫42,966	800V	3A	1V @ 3A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 800V	-	Through Hole	DO-201AA, DO-27, Axial	Axial	-65°C ~ 150°C
1N5818RLG	ON Semiconductor	DIODE SCHOTTKY 30V 1A AXIAL Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 30V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: Axial Operating Temperature - Junction: -65°C ~ 125°C	パッケージ: DO-204AL, DO-41, Axial	在庫265,560	30V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 30V	-	Through Hole	DO-204AL, DO-41, Axial	Axial	-65°C ~ 125°C
NSR01F30NXT5G	ON Semiconductor	DIODE SCHOTTKY 30V 100MA 2DSN Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 100mA (DC) Voltage - Forward (Vf) (Max) @ If: 500mV @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 30V Capacitance @ Vr, F: 7pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: 2-XFDFN Supplier Device Package: 2-DSN (0.60x0.30) Operating Temperature - Junction: 125°C (Max)	パッケージ: 2-XFDFN	在庫6,832	30V	100mA (DC)	500mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	50µA @ 30V	7pF @ 5V, 1MHz	Surface Mount	2-XFDFN	2-DSN (0.60x0.30)	125°C (Max)
MUR115RLG	ON Semiconductor	DIODE GEN PURP 150V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 2µA @ 150V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: Axial Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: DO-204AL, DO-41, Axial	在庫95,220	150V	1A	875mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	2µA @ 150V	-	Through Hole	DO-204AL, DO-41, Axial	Axial	-65°C ~ 175°C
MRS1504T3G	ON Semiconductor	DIODE GEN PURP 400V 1.5A SMB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.04V @ 1.5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1µA @ 400V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: DO-214AA, SMB	在庫480,000	400V	1.5A	1.04V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 400V	-	Surface Mount	DO-214AA, SMB	SMB	-55°C ~ 150°C
SBAS20LT1G	ON Semiconductor	DIODE GEN PURP 200V 200MA SOT23 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 100nA @ 150V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23 Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: TO-236-3, SC-59, SOT-23-3	在庫36,000	200V	200mA (DC)	1.25V @ 200mA	Small Signal =< 200mA (Io), Any Speed	50ns	100nA @ 150V	5pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23	-55°C ~ 150°C
BAT54M3T5G	ON Semiconductor	DIODE SCHOTTKY 30V 200MA SOT723 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5ns Current - Reverse Leakage @ Vr: 2µA @ 25V Capacitance @ Vr, F: 10pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: SOT-723 Operating Temperature - Junction: -55°C ~ 125°C	パッケージ: SOT-723	在庫134,502	30V	200mA (DC)	800mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	5ns	2µA @ 25V	10pF @ 1V, 1MHz	Surface Mount	SOT-723	SOT-723	-55°C ~ 125°C
BAT54XV2T5G	ON Semiconductor	DIODE SCHOTTKY 30V 200MA SOD523 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5ns Current - Reverse Leakage @ Vr: 2µA @ 25V Capacitance @ Vr, F: 10pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: SOD-523 Operating Temperature - Junction: -55°C ~ 125°C	パッケージ: SC-79, SOD-523	在庫136,050	30V	200mA (DC)	800mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	5ns	2µA @ 25V	10pF @ 1V, 1MHz	Surface Mount	SC-79, SOD-523	SOD-523	-55°C ~ 125°C
BAS16TT1G	ON Semiconductor	DIODE GEN PURP 100V 200MA SC75 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6ns Current - Reverse Leakage @ Vr: 1µA @ 75V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SC-75, SOT-416 Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: SC-75, SOT-416	在庫1,132,680	100V	200mA (DC)	1.25V @ 150mA	Small Signal =< 200mA (Io), Any Speed	6ns	1µA @ 75V	2pF @ 0V, 1MHz	Surface Mount	SC-75, SOT-416	SC-75, SOT-416	-55°C ~ 150°C
1N4934RLG	ON Semiconductor	DIODE GEN PURP 100V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C	パッケージ: DO-204AL, DO-41, Axial	在庫126,870	100V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	300ns	5µA @ 100V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 150°C
1N4936RLG	ON Semiconductor	DIODE GEN PURP 400V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C	パッケージ: DO-204AL, DO-41, Axial	在庫17,100	400V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	300ns	5µA @ 400V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 150°C
1N4933RLG	ON Semiconductor	DIODE GEN PURP 50V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C	パッケージ: DO-204AL, DO-41, Axial	在庫215,568	50V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	300ns	5µA @ 50V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 150°C
BAS21LT3G	ON Semiconductor	DIODE GEN PURP 250V 200MA SOT23 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 250V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 100nA @ 200V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236) Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: TO-236-3, SC-59, SOT-23-3	在庫120,000	250V	200mA (DC)	1.25V @ 200mA	Small Signal =< 200mA (Io), Any Speed	50ns	100nA @ 200V	5pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)	-55°C ~ 150°C
MBR40250TG	ON Semiconductor	DIODE SCHOTTKY 250V 40A TO220AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 250V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 970mV @ 40A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 30µA @ 250V Capacitance @ Vr, F: 500pF @ 5V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Operating Temperature - Junction: -65°C ~ 150°C	パッケージ: TO-220-3	在庫19,872	250V	40A	970mV @ 40A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	30µA @ 250V	500pF @ 5V, 1MHz	Through Hole	TO-220-3	TO-220AB	-65°C ~ 150°C
MUR1540G	ON Semiconductor	DIODE GEN PURP 400V 15A TO220-2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60ns Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: TO-220-2	在庫375,732	400V	15A	1.25V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	60ns	10µA @ 400V	-	Through Hole	TO-220-2	TO-220-2	-65°C ~ 175°C
MUR1560G	ON Semiconductor	DIODE GEN PURP 600V 15A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: TO-220-2	在庫86,424	600V	15A	1.5V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	60ns	10µA @ 600V	-	Through Hole	TO-220-2	TO-220AC	-65°C ~ 175°C
MBR1645G	ON Semiconductor	DIODE SCHOTTKY 45V 16A TO220-2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 630mV @ 16A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 45V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: TO-220-2	在庫57,588	45V	16A	630mV @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 45V	-	Through Hole	TO-220-2	TO-220-2	-65°C ~ 175°C
MBR10100G	ON Semiconductor	DIODE SCHOTTKY 100V 10A TO220-2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 800mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: TO-220-2	在庫223,908	100V	10A	800mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Through Hole	TO-220-2	TO-220-2	-65°C ~ 175°C
MBR1060G	ON Semiconductor	DIODE SCHOTTKY 60V 10A TO220-2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 800mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 60V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: TO-220-2	在庫71,220	60V	10A	800mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 60V	-	Through Hole	TO-220-2	TO-220-2	-65°C ~ 175°C
MUR820G	ON Semiconductor	DIODE GEN PURP 200V 8A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 975mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: TO-220-2	在庫379,188	200V	8A	975mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	-	Through Hole	TO-220-2	TO-220AC	-65°C ~ 175°C
MUR810G	ON Semiconductor	DIODE GEN PURP 100V 8A TO220-2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 975mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: TO-220-2	在庫6,464	100V	8A	975mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 100V	-	Through Hole	TO-220-2	TO-220-2	-65°C ~ 175°C
MBR1045G	ON Semiconductor	DIODE SCHOTTKY 45V 10A TO220-2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 840mV @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 45V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: TO-220-2	在庫97,848	45V	10A	840mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 45V	-	Through Hole	TO-220-2	TO-220-2	-65°C ~ 175°C
80SQ045NG	ON Semiconductor	DIODE SCHOTTKY 45V 8A AXIAL Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 550mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 45V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Supplier Device Package: Axial Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: DO-201AA, DO-27, Axial	在庫14,688	45V	8A	550mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 45V	-	Through Hole	DO-201AA, DO-27, Axial	Axial	-65°C ~ 175°C
MBR735G	ON Semiconductor	DIODE SCHOTTKY 35V 7.5A TO220-2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 7.5A Voltage - Forward (Vf) (Max) @ If: 840mV @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 35V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: TO-220-2	在庫15,960	35V	7.5A	840mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 35V	-	Through Hole	TO-220-2	TO-220-2	-65°C ~ 175°C
MBRD360G	ON Semiconductor	DIODE SCHOTTKY 60V 3A DPAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 600mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 60V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: DPAK-3 Operating Temperature - Junction: -65°C ~ 150°C	パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63	在庫15,396	60V	3A	600mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 60V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK-3	-65°C ~ 150°C
MBRD835LG	ON Semiconductor	DIODE SCHOTTKY 35V 8A DPAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 510mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.4mA @ 35V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: DPAK-3 Operating Temperature - Junction: -65°C ~ 150°C	パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63	在庫220,824	35V	8A	510mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.4mA @ 35V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK-3	-65°C ~ 150°C
MBRD340G	ON Semiconductor	DIODE SCHOTTKY 40V 3A DPAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 600mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: DPAK-3 Operating Temperature - Junction: -65°C ~ 150°C	パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63	在庫7,848	40V	3A	600mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 40V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK-3	-65°C ~ 150°C
MBRB8H100T4G	ON Semiconductor	DIODE SCHOTTKY 100V 8A D2PAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 710mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 4.5µA @ 100V Capacitance @ Vr, F: 600pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	在庫26,016	100V	8A	710mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	4.5µA @ 100V	600pF @ 4V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-65°C ~ 175°C
MUR4100EG	ON Semiconductor	DIODE GEN PURP 1KV 4A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.85V @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100ns Current - Reverse Leakage @ Vr: 25µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: DO-201AA, DO-27, Axial	在庫152,640	1000V	4A	1.85V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	100ns	25µA @ 1000V	-	Through Hole	DO-201AA, DO-27, Axial	DO-201AD	-65°C ~ 175°C

MURA215T3G

ON Semiconductor

DIODE GEN PURPOSE 150V 2A SMA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 2µA @ 150V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: DO-214AC, SMA

在庫1,920,000

150V

2A

950mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

2µA @ 150V

-

Surface Mount

DO-214AC, SMA

SMA

-65°C ~ 175°C

1N5407RLG

ON Semiconductor

DIODE GEN PURP 800V 3A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 150°C

パッケージ: DO-201AA, DO-27, Axial

在庫42,966

800V

3A

1V @ 3A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 800V

-

Through Hole

DO-201AA, DO-27, Axial

Axial

-65°C ~ 150°C

1N5818RLG

ON Semiconductor

DIODE SCHOTTKY 30V 1A AXIAL

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 125°C

パッケージ: DO-204AL, DO-41, Axial

在庫265,560

30V

1A

550mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 30V

-

Through Hole

DO-204AL, DO-41, Axial

Axial

-65°C ~ 125°C

NSR01F30NXT5G

ON Semiconductor

DIODE SCHOTTKY 30V 100MA 2DSN

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 100mA (DC)
Voltage - Forward (Vf) (Max) @ If: 500mV @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 30V
Capacitance @ Vr, F: 7pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-XFDFN
Supplier Device Package: 2-DSN (0.60x0.30)
Operating Temperature - Junction: 125°C (Max)

パッケージ: 2-XFDFN

在庫6,832

30V

100mA (DC)

500mV @ 100mA

Small Signal =< 200mA (Io), Any Speed

-

50µA @ 30V

7pF @ 5V, 1MHz

Surface Mount

2-XFDFN

2-DSN (0.60x0.30)

125°C (Max)

MUR115RLG

ON Semiconductor

DIODE GEN PURP 150V 1A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 2µA @ 150V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: DO-204AL, DO-41, Axial

在庫95,220

150V

1A

875mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

2µA @ 150V

-

Through Hole

DO-204AL, DO-41, Axial

Axial

-65°C ~ 175°C

MRS1504T3G

ON Semiconductor

DIODE GEN PURP 400V 1.5A SMB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.04V @ 1.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: DO-214AA, SMB

在庫480,000

400V

1.5A

1.04V @ 1.5A

Standard Recovery >500ns, > 200mA (Io)

-

1µA @ 400V

-

Surface Mount

DO-214AA, SMB

SMB

-55°C ~ 150°C

SBAS20LT1G

ON Semiconductor

DIODE GEN PURP 200V 200MA SOT23

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 100nA @ 150V
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: TO-236-3, SC-59, SOT-23-3

在庫36,000

200V

200mA (DC)

1.25V @ 200mA

Small Signal =< 200mA (Io), Any Speed

50ns

100nA @ 150V

5pF @ 0V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

-55°C ~ 150°C

BAT54M3T5G

ON Semiconductor

DIODE SCHOTTKY 30V 200MA SOT723

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5ns
Current - Reverse Leakage @ Vr: 2µA @ 25V
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: SOT-723
Operating Temperature - Junction: -55°C ~ 125°C

パッケージ: SOT-723

在庫134,502

30V

200mA (DC)

800mV @ 100mA

Small Signal =< 200mA (Io), Any Speed

5ns

2µA @ 25V

10pF @ 1V, 1MHz

Surface Mount

SOT-723

-55°C ~ 125°C

BAT54XV2T5G

ON Semiconductor

DIODE SCHOTTKY 30V 200MA SOD523

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5ns
Current - Reverse Leakage @ Vr: 2µA @ 25V
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 125°C

パッケージ: SC-79, SOD-523

在庫136,050

30V

200mA (DC)

800mV @ 100mA

Small Signal =< 200mA (Io), Any Speed

5ns

2µA @ 25V

10pF @ 1V, 1MHz

Surface Mount

SC-79, SOD-523

SOD-523

-55°C ~ 125°C

BAS16TT1G

ON Semiconductor

DIODE GEN PURP 100V 200MA SC75

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6ns
Current - Reverse Leakage @ Vr: 1µA @ 75V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SC-75, SOT-416
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: SC-75, SOT-416

在庫1,132,680

100V

200mA (DC)

1.25V @ 150mA

Small Signal =< 200mA (Io), Any Speed

6ns

1µA @ 75V

2pF @ 0V, 1MHz

Surface Mount

SC-75, SOT-416

-55°C ~ 150°C

1N4934RLG

ON Semiconductor

DIODE GEN PURP 100V 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C

パッケージ: DO-204AL, DO-41, Axial

在庫126,870

100V

1A

1.2V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

300ns

5µA @ 100V

-

Through Hole

DO-204AL, DO-41, Axial

DO-41

-65°C ~ 150°C

1N4936RLG

ON Semiconductor

DIODE GEN PURP 400V 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C

パッケージ: DO-204AL, DO-41, Axial

在庫17,100

400V

1A

1.2V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

300ns

5µA @ 400V

-

Through Hole

DO-204AL, DO-41, Axial

DO-41

-65°C ~ 150°C

1N4933RLG

ON Semiconductor

DIODE GEN PURP 50V 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C

パッケージ: DO-204AL, DO-41, Axial

在庫215,568

50V

1A

1.2V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

300ns

5µA @ 50V

-

Through Hole

DO-204AL, DO-41, Axial

DO-41

-65°C ~ 150°C

BAS21LT3G

ON Semiconductor

DIODE GEN PURP 250V 200MA SOT23

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 250V
Current - Average Rectified (Io): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 100nA @ 200V
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: TO-236-3, SC-59, SOT-23-3

在庫120,000

250V

200mA (DC)

1.25V @ 200mA

Small Signal =< 200mA (Io), Any Speed

50ns

100nA @ 200V

5pF @ 0V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

-55°C ~ 150°C

MBR40250TG

ON Semiconductor

DIODE SCHOTTKY 250V 40A TO220AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 250V
Current - Average Rectified (Io): 40A
Voltage - Forward (Vf) (Max) @ If: 970mV @ 40A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 30µA @ 250V
Capacitance @ Vr, F: 500pF @ 5V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -65°C ~ 150°C

パッケージ: TO-220-3

在庫19,872

250V

40A

970mV @ 40A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

30µA @ 250V

500pF @ 5V, 1MHz

Through Hole

TO-220-3

TO-220AB

-65°C ~ 150°C

MUR1540G

ON Semiconductor

DIODE GEN PURP 400V 15A TO220-2

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60ns
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: TO-220-2

在庫375,732

400V

15A

1.25V @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

60ns

10µA @ 400V

-

Through Hole

TO-220-2

-65°C ~ 175°C

MUR1560G

ON Semiconductor

DIODE GEN PURP 600V 15A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60ns
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: TO-220-2

在庫86,424

600V

15A

1.5V @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

60ns

10µA @ 600V

-

Through Hole

TO-220-2

TO-220AC

-65°C ~ 175°C

MBR1645G

ON Semiconductor

DIODE SCHOTTKY 45V 16A TO220-2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 630mV @ 16A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 45V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: TO-220-2

在庫57,588

45V

16A

630mV @ 16A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 45V

-

Through Hole

TO-220-2

-65°C ~ 175°C

MBR10100G

ON Semiconductor

DIODE SCHOTTKY 100V 10A TO220-2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 800mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: TO-220-2

在庫223,908

100V

10A

800mV @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 100V

-

Through Hole

TO-220-2

-65°C ~ 175°C

MBR1060G

ON Semiconductor

DIODE SCHOTTKY 60V 10A TO220-2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 800mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: TO-220-2

在庫71,220

60V

10A

800mV @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 60V

-

Through Hole

TO-220-2

-65°C ~ 175°C

MUR820G

ON Semiconductor

DIODE GEN PURP 200V 8A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 975mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: TO-220-2

在庫379,188

200V

8A

975mV @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

5µA @ 200V

-

Through Hole

TO-220-2

TO-220AC

-65°C ~ 175°C

MUR810G

ON Semiconductor

DIODE GEN PURP 100V 8A TO220-2

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 975mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: TO-220-2

在庫6,464

100V

8A

975mV @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

5µA @ 100V

-

Through Hole

TO-220-2

-65°C ~ 175°C

MBR1045G

ON Semiconductor

DIODE SCHOTTKY 45V 10A TO220-2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 840mV @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 45V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: TO-220-2

在庫97,848

45V

10A

840mV @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 45V

-

Through Hole

TO-220-2

-65°C ~ 175°C

80SQ045NG

ON Semiconductor

DIODE SCHOTTKY 45V 8A AXIAL

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 45V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: DO-201AA, DO-27, Axial

在庫14,688

45V

8A

550mV @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 45V

-

Through Hole

DO-201AA, DO-27, Axial

Axial

-65°C ~ 175°C

MBR735G

ON Semiconductor

DIODE SCHOTTKY 35V 7.5A TO220-2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io): 7.5A
Voltage - Forward (Vf) (Max) @ If: 840mV @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 35V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: TO-220-2

在庫15,960

35V

7.5A

840mV @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 35V

-

Through Hole

TO-220-2

-65°C ~ 175°C

MBRD360G

ON Semiconductor

DIODE SCHOTTKY 60V 3A DPAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK-3
Operating Temperature - Junction: -65°C ~ 150°C

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

在庫15,396

60V

3A

600mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 60V

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

DPAK-3

-65°C ~ 150°C

MBRD835LG

ON Semiconductor

DIODE SCHOTTKY 35V 8A DPAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 510mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1.4mA @ 35V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK-3
Operating Temperature - Junction: -65°C ~ 150°C

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

在庫220,824

35V

8A

510mV @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

-

1.4mA @ 35V

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

DPAK-3

-65°C ~ 150°C

MBRD340G

ON Semiconductor

DIODE SCHOTTKY 40V 3A DPAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK-3
Operating Temperature - Junction: -65°C ~ 150°C

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

在庫7,848

40V

3A

600mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 40V

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

DPAK-3

-65°C ~ 150°C

MBRB8H100T4G

ON Semiconductor

DIODE SCHOTTKY 100V 8A D2PAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 710mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 4.5µA @ 100V
Capacitance @ Vr, F: 600pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

在庫26,016

100V

8A

710mV @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

-

4.5µA @ 100V

600pF @ 4V, 1MHz

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

-65°C ~ 175°C

MUR4100EG

ON Semiconductor

DIODE GEN PURP 1KV 4A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1.85V @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100ns
Current - Reverse Leakage @ Vr: 25µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: DO-201AA, DO-27, Axial

在庫152,640

1000V

4A

1.85V @ 4A

Fast Recovery =< 500ns, > 200mA (Io)

100ns

25µA @ 1000V

-

Through Hole

DO-201AA, DO-27, Axial

DO-201AD

-65°C ~ 175°C