ON Semiconductor 製品 - トランジスタ - FET、MOSFET - シングル

2SK4087LS

ON Semiconductor

MOSFET N-CH 600V 14A TO-220F

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 30V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 2W (Ta), 40W (Tc)
• Rds On (Max) @ Id, Vgs: 610 mOhm @ 7A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220FI(LS)
• Package / Case: TO-220-3 Full Pack

パッケージ: TO-220-3 Full Pack

2SK4066-E

ON Semiconductor

MOSFET N-CH 60V 100A SMP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 12500pF @ 20V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.65W (Ta), 90W (Tc)
• Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 50A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: SMP
• Package / Case: TO-220-3, Short Tab

パッケージ: TO-220-3, Short Tab

2SK4066-DL-E

ON Semiconductor

MOSFET N-CH 60V 100A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 12500pF @ 20V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.65W (Ta), 90W (Tc)
• Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 50A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SMP-FD
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

2SK4065-E

ON Semiconductor

MOSFET N-CH 75V 100A SMP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 75V
• Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 12200pF @ 20V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.65W (Ta), 90W (Tc)
• Rds On (Max) @ Id, Vgs: 6 mOhm @ 50A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: SMP
• Package / Case: TO-220-3, Short Tab

パッケージ: TO-220-3, Short Tab

2SK4065-DL-E

ON Semiconductor

MOSFET N-CH 75V 100A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 75V
• Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 12200pF @ 20V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.65W (Ta), 90W (Tc)
• Rds On (Max) @ Id, Vgs: 6 mOhm @ 50A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SMP-FD
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

2SK4043LS

ON Semiconductor

MOSFET N-CH 30V 20A TO-220FI

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 37nC @ 4V
• Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 20V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 2W (Ta), 20W (Tc)
• Rds On (Max) @ Id, Vgs: 21 mOhm @ 10A, 4V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220FI(LS)
• Package / Case: TO-220-3 Full Pack

パッケージ: TO-220-3 Full Pack

2SK3748

ON Semiconductor

MOSFET N-CH 1500V 4A TO-3PML

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1500V
• Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 30V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3W (Ta), 65W (Tc)
• Rds On (Max) @ Id, Vgs: 7 Ohm @ 2A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-3PML
• Package / Case: TO-3P-3 Full Pack

パッケージ: TO-3P-3 Full Pack

2SK3747-MG8

ON Semiconductor

MOSFET N-CH 1500V 2A TO-3PML

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1500V
• Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 37.5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 30V
• Vgs (Max): ±35V
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 13 Ohm @ 1A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-3PML
• Package / Case: TO-3P-3 Full Pack

パッケージ: TO-3P-3 Full Pack

2SK3747

ON Semiconductor

MOSFET N-CH 1500V 2A TO-3PML

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1500V
• Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 37.5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 30V
• Vgs (Max): ±35V
• FET Feature: -
• Power Dissipation (Max): 3W (Ta), 50W (Tc)
• Rds On (Max) @ Id, Vgs: 13 Ohm @ 1A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-3PML
• Package / Case: TO-3P-3 Full Pack

パッケージ: TO-3P-3 Full Pack

2SK3746

ON Semiconductor

MOSFET N-CH 1500V 2A TO-3PB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1500V
• Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 37.5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 30V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 110W (Tc)
• Rds On (Max) @ Id, Vgs: 13 Ohm @ 1A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-3PB
• Package / Case: TO-3P-3, SC-65-3

パッケージ: TO-3P-3, SC-65-3

2SK3745LS

ON Semiconductor

MOSFET N-CH 1500V 2A TO-220FI

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1500V
• Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 37.5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 30V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2W (Ta), 35W (Tc)
• Rds On (Max) @ Id, Vgs: 13 Ohm @ 1A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220FI(LS)
• Package / Case: TO-220-3 Full Pack

パッケージ: TO-220-3 Full Pack

2SK3704

ON Semiconductor

MOSFET N-CH 60V 45A TO-220ML

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 20V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2W (Ta), 30W (Tc)
• Rds On (Max) @ Id, Vgs: 14 mOhm @ 23A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220ML
• Package / Case: TO-220-3 Full Pack

パッケージ: TO-220-3 Full Pack

2SK3703

ON Semiconductor

MOSFET N-CH 60V 30A TO-220ML

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1780pF @ 20V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2W (Ta), 25W (Tc)
• Rds On (Max) @ Id, Vgs: 26 mOhm @ 15A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220ML
• Package / Case: TO-220-3 Full Pack

パッケージ: TO-220-3 Full Pack

2SJ652-RA11

ON Semiconductor

MOSFET P-CH 60V 28A TO-220ML

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4360pF @ 20V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 38 mOhm @ 14A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220ML
• Package / Case: TO-220-3 Full Pack

パッケージ: TO-220-3 Full Pack

2SJ652

ON Semiconductor

MOSFET P-CH 60V 28A TO-220ML

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4360pF @ 20V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2W (Ta), 30W (Tc)
• Rds On (Max) @ Id, Vgs: 38 mOhm @ 14A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220ML
• Package / Case: TO-220-3 Full Pack

パッケージ: TO-220-3 Full Pack

NTMFS4921NT1G

ON Semiconductor

MOSFET N-CH 30V 8.8A SO8FL

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 58.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 25nC @ 11.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 12V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 870mW (Ta), 38.5W (Tc)
• Rds On (Max) @ Id, Vgs: 6.95 mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 5-DFN (5x6) (8-SOFL)
• Package / Case: 8-PowerTDFN, 5 Leads

パッケージ: 8-PowerTDFN, 5 Leads

BS108ZL1G

ON Semiconductor

MOSFET N-CH 200V 0.25A TO-92

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2V, 2.8V
• Vgs(th) (Max) @ Id: 1.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 350mW (Ta)
• Rds On (Max) @ Id, Vgs: 8 Ohm @ 100mA, 2.8V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-92-3
• Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

パッケージ: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

NTMS4917NR2G

ON Semiconductor

MOSFET N-CH 30V 10.2A SO8FL

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1054pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 880mW (Ta)
• Rds On (Max) @ Id, Vgs: 11 mOhm @ 11A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOIC
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

パッケージ: 8-SOIC (0.154", 3.90mm Width)

NTD4970NT4G

ON Semiconductor

MOSFET N-CH 30V 38A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 36A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 774pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.38W (Ta), 24.6W (Tc)
• Rds On (Max) @ Id, Vgs: 11 mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DPAK
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

MTD6N20ET5G

ON Semiconductor

MOSFET N-CH 200V 6A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.75W (Ta), 50W (Tc)
• Rds On (Max) @ Id, Vgs: 700 mOhm @ 3A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DPAK-3
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

NTMS5838NLR2G

ON Semiconductor

MOSFET N-CH 40V 7.5A 8SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 785pF @ 20V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.5W (Ta)
• Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOIC
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

パッケージ: 8-SOIC (0.154", 3.90mm Width)

NTMS5835NLR2G

ON Semiconductor

MOSFET N-CH 40V 9.2A 8SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2115pF @ 20V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.5W (Ta)
• Rds On (Max) @ Id, Vgs: 10 mOhm @ 10A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOIC
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

パッケージ: 8-SOIC (0.154", 3.90mm Width)

NTMFS4923NET3G

ON Semiconductor

MOSFET N-CH 30V 91A SO-8FL

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 91A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 4850pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 930mW (Ta), 48W (Tc)
• Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 30A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 5-DFN (5x6) (8-SOFL)
• Package / Case: 8-PowerTDFN, 5 Leads

パッケージ: 8-PowerTDFN, 5 Leads

NTMFS4827NET3G

ON Semiconductor

MOSFET N-CH 30V 8.8A SO-8FL

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 58.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 12V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 870mW (Ta), 38.5W (Tc)
• Rds On (Max) @ Id, Vgs: 6.95 mOhm @ 30A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 5-DFN (5x6) (8-SOFL)
• Package / Case: 8-PowerTDFN, 5 Leads

パッケージ: 8-PowerTDFN, 5 Leads

NTMFS4827NET1G

ON Semiconductor

MOSFET N-CH 30V 58.5A SO-8FL

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 58.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 12V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 870mW (Ta), 38.5W (Tc)
• Rds On (Max) @ Id, Vgs: 6.95 mOhm @ 30A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 5-DFN (5x6) (8-SOFL)
• Package / Case: 8-PowerTDFN, 5 Leads

パッケージ: 8-PowerTDFN, 5 Leads

NTMFS4826NET3G

ON Semiconductor

MOSFET N-CH 30V 66A SO-8FL

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 66A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 12V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 870mW (Ta), 41.7W (Tc)
• Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 30A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 5-DFN (5x6) (8-SOFL)
• Package / Case: 8-PowerTDFN, 5 Leads

パッケージ: 8-PowerTDFN, 5 Leads

NTMFS4826NET1G

ON Semiconductor

MOSFET N-CH 30V 66A SO-8FL

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 66A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 12V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 870mW (Ta), 41.7W (Tc)
• Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 30A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 5-DFN (5x6) (8-SOFL)
• Package / Case: 8-PowerTDFN, 5 Leads

パッケージ: 8-PowerTDFN, 5 Leads

NTMFS4825NFET3G

ON Semiconductor

MOSFET N-CH 30V 171A SO-8FL

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 171A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 40.2nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 5660pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 950mW (Ta), 96.2W (Tc)
• Rds On (Max) @ Id, Vgs: 2 mOhm @ 22A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 5-DFN (5x6) (8-SOFL)
• Package / Case: 8-PowerTDFN, 5 Leads

パッケージ: 8-PowerTDFN, 5 Leads

NTMFS4825NFET1G

ON Semiconductor

MOSFET N-CH 30V 171A SO-8FL

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 171A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 40.2nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 5660pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 950mW (Ta), 96.2W (Tc)
• Rds On (Max) @ Id, Vgs: 2 mOhm @ 22A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 5-DFN (5x6) (8-SOFL)
• Package / Case: 8-PowerTDFN, 5 Leads

パッケージ: 8-PowerTDFN, 5 Leads

NTMFS5834NLT1G

ON Semiconductor

MOSFET N-CH 40V 13A SO-8FL

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1231pF @ 20V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.6W (Ta), 107W (Tc)
• Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 5-DFN (5x6) (8-SOFL)
• Package / Case: 8-PowerTDFN, 5 Leads

パッケージ: 8-PowerTDFN, 5 Leads