ページ 32 - Rohm Semiconductor 製品 - トランジスタ - FET、MOSFET - シングル | Heisener Electronics
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Rohm Semiconductor 製品 - トランジスタ - FET、MOSFET - シングル

レコード 1,247
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在庫
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Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
hot RRH050P03GZETB
Rohm Semiconductor

MOSFET P-CH 30V 5A 8SOIC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 650mW (Ta)
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
パッケージ: 8-SOIC (0.154", 3.90mm Width)
在庫30,000
MOSFET (Metal Oxide)
30V
5A (Ta)
4V, 10V
2.5V @ 1mA
17nC @ 10V
850pF @ 10V
±20V
-
650mW (Ta)
50 mOhm @ 5A, 10V
150°C (TJ)
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
RS3E135BNGZETB
Rohm Semiconductor

NCH 30V 13.5A MIDDLE POWER MOSFE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Tc)
  • Rds On (Max) @ Id, Vgs: 14.6 mOhm @ 9.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
パッケージ: 8-SOIC (0.154", 3.90mm Width)
在庫4,768
MOSFET (Metal Oxide)
30V
9.5A (Ta)
10V
2.5V @ 1mA
8.3nC @ 4.5V
680pF @ 15V
±20V
-
2W (Tc)
14.6 mOhm @ 9.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
RF4E070BNTR
Rohm Semiconductor

MOSFET N-CH 30V 7A 8-HUML

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 28.6 mOhm @ 7A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-HUML2020L8 (2x2)
  • Package / Case: 8-PowerUDFN
パッケージ: 8-PowerUDFN
在庫2,816
MOSFET (Metal Oxide)
30V
7A (Ta)
4.5V, 10V
2V @ 250µA
8.9nC @ 10V
410pF @ 15V
±20V
-
2W (Ta)
28.6 mOhm @ 7A, 10V
150°C (TJ)
Surface Mount
6-HUML2020L8 (2x2)
8-PowerUDFN
RMW150N03TB
Rohm Semiconductor

MOSFET N-CH 30V 15A 8PSOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 831pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta)
  • Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 15A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-PSOP
  • Package / Case: 8-SMD, Flat Lead
パッケージ: 8-SMD, Flat Lead
在庫4,080
MOSFET (Metal Oxide)
30V
15A (Ta)
4.5V, 10V
2.5V @ 1mA
15nC @ 10V
831pF @ 15V
±20V
-
3W (Ta)
9.1 mOhm @ 15A, 10V
150°C (TJ)
Surface Mount
8-PSOP
8-SMD, Flat Lead
RS1G150MNTB
Rohm Semiconductor

MOSFET N-CH 40V 15A 8HSOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 10.6 mOhm @ 15A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HSOP
  • Package / Case: 8-PowerTDFN
パッケージ: 8-PowerTDFN
在庫4,512
MOSFET (Metal Oxide)
40V
15A (Ta)
4.5V, 10V
2.5V @ 1mA
15nC @ 10V
930pF @ 20V
±20V
-
3W (Ta), 25W (Tc)
10.6 mOhm @ 15A, 10V
150°C (TJ)
Surface Mount
8-HSOP
8-PowerTDFN
hot RZQ050P01TR
Rohm Semiconductor

MOSFET P-CH 12V 5A TSMT6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2850pF @ 6V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 600mW (Ta)
  • Rds On (Max) @ Id, Vgs: 26 mOhm @ 5A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT6 (SC-95)
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
パッケージ: SOT-23-6 Thin, TSOT-23-6
在庫715,032
MOSFET (Metal Oxide)
12V
5A (Ta)
1.5V, 4.5V
1V @ 1mA
35nC @ 4.5V
2850pF @ 6V
±10V
-
600mW (Ta)
26 mOhm @ 5A, 4.5V
150°C (TJ)
Surface Mount
TSMT6 (SC-95)
SOT-23-6 Thin, TSOT-23-6
hot RCD051N20TL
Rohm Semiconductor

MOSFET N-CH 200V 5A CPT3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.25V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 850mW (Ta), 20W (Tc)
  • Rds On (Max) @ Id, Vgs: 760 mOhm @ 2.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: CPT3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63
在庫18,624
MOSFET (Metal Oxide)
200V
5A (Tc)
10V
5.25V @ 1mA
8.3nC @ 10V
330pF @ 25V
±30V
-
850mW (Ta), 20W (Tc)
760 mOhm @ 2.5A, 10V
150°C (TJ)
Surface Mount
CPT3
TO-252-3, DPak (2 Leads + Tab), SC-63
RS1E200GNTB
Rohm Semiconductor

MOSFET N-CH 30V 20A 8-HSOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 16.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 25.1W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 20A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HSOP
  • Package / Case: 8-PowerTDFN
パッケージ: 8-PowerTDFN
在庫4,176
MOSFET (Metal Oxide)
30V
20A (Ta)
4.5V, 10V
2.5V @ 1mA
16.8nC @ 10V
1080pF @ 15V
±20V
-
3W (Ta), 25.1W (Tc)
4.6 mOhm @ 20A, 10V
150°C (TJ)
Surface Mount
8-HSOP
8-PowerTDFN
RQ3L050GNTB
Rohm Semiconductor

NCH 60V 12A MIDDLE POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 14.8W (Tc)
  • Rds On (Max) @ Id, Vgs: 61 mOhm @ 5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HSMT (3.2x3)
  • Package / Case: 8-PowerVDFN
パッケージ: 8-PowerVDFN
在庫5,808
MOSFET (Metal Oxide)
60V
12A (Tc)
10V
2.5V @ 25µA
2.8nC @ 4.5V
300pF @ 30V
±20V
-
14.8W (Tc)
61 mOhm @ 5A, 10V
150°C (TJ)
Surface Mount
8-HSMT (3.2x3)
8-PowerVDFN
hot RTQ035N03TR
Rohm Semiconductor

MOSFET N-CH 30V 3.5A TSMT6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 285pF @ 10V
  • Vgs (Max): 12V
  • FET Feature: -
  • Power Dissipation (Max): 1.25W (Ta)
  • Rds On (Max) @ Id, Vgs: 54 mOhm @ 3.5A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT6 (SC-95)
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
パッケージ: SOT-23-6 Thin, TSOT-23-6
在庫3,995,916
MOSFET (Metal Oxide)
30V
3.5A (Ta)
2.5V, 4.5V
1.5V @ 1mA
6.4nC @ 4.5V
285pF @ 10V
12V
-
1.25W (Ta)
54 mOhm @ 3.5A, 4.5V
150°C (TJ)
Surface Mount
TSMT6 (SC-95)
SOT-23-6 Thin, TSOT-23-6
hot RSR020P05TL
Rohm Semiconductor

MOSFET P-CH 45V 2A TSMT3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 45V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 540mW (Ta)
  • Rds On (Max) @ Id, Vgs: 190 mOhm @ 2A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT3
  • Package / Case: SC-96
パッケージ: SC-96
在庫5,056
MOSFET (Metal Oxide)
45V
2A (Ta)
4V, 10V
3V @ 1mA
4.5nC @ 4.5V
500pF @ 10V
±20V
-
540mW (Ta)
190 mOhm @ 2A, 10V
150°C (TJ)
Surface Mount
TSMT3
SC-96
hot RSR025P03TL
Rohm Semiconductor

MOSFET P-CH 30V 2.5A TSMT3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 98 mOhm @ 2.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT3
  • Package / Case: SC-96
パッケージ: SC-96
在庫566,124
MOSFET (Metal Oxide)
30V
2.5A (Ta)
4V, 10V
-
5.4nC @ 5V
460pF @ 10V
±20V
-
1W (Ta)
98 mOhm @ 2.5A, 10V
150°C (TJ)
Surface Mount
TSMT3
SC-96
RQ6E085BNTCR
Rohm Semiconductor

NCH 30V 8.5A MIDDLE POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 32.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.25W (Tc)
  • Rds On (Max) @ Id, Vgs: 14.4 mOhm @ 8.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-457
  • Package / Case: SC-74, SOT-457
パッケージ: SC-74, SOT-457
在庫2,048
MOSFET (Metal Oxide)
30V
8.5A (Tc)
10V
2.5V @ 1mA
32.7nC @ 10V
1350pF @ 15V
±20V
-
1.25W (Tc)
14.4 mOhm @ 8.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-457
SC-74, SOT-457
hot RSQ035N03TR
Rohm Semiconductor

MOSFET N-CH 30V 3.5A TSMT6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 10V
  • Vgs (Max): 20V
  • FET Feature: -
  • Power Dissipation (Max): 1.25W (Ta)
  • Rds On (Max) @ Id, Vgs: 62 mOhm @ 3.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT6 (SC-95)
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
パッケージ: SOT-23-6 Thin, TSOT-23-6
在庫440,604
MOSFET (Metal Oxide)
30V
3.5A (Ta)
4V, 10V
2.5V @ 1mA
7.4nC @ 5V
290pF @ 10V
20V
-
1.25W (Ta)
62 mOhm @ 3.5A, 10V
150°C (TJ)
Surface Mount
TSMT6 (SC-95)
SOT-23-6 Thin, TSOT-23-6
RQ5C060BCTCL
Rohm Semiconductor

PCH -20V -6A MIDDLE POWER MOSFET

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 19.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Tc)
  • Rds On (Max) @ Id, Vgs: 21.1 mOhm @ 6A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT3
  • Package / Case: SC-96
パッケージ: SC-96
在庫7,728
MOSFET (Metal Oxide)
20V
6A (Ta)
4.5V
1.2V @ 1mA
19.2nC @ 4.5V
1360pF @ 10V
±8V
-
1W (Tc)
21.1 mOhm @ 6A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
TSMT3
SC-96
RND030N20TL
Rohm Semiconductor

MOSFET N-CH 200V 3A CPT3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 850mW (Ta), 20W (Tc)
  • Rds On (Max) @ Id, Vgs: 870 mOhm @ 1.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: CPT3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63
在庫7,888
MOSFET (Metal Oxide)
200V
3A (Tc)
10V
5.2V @ 1mA
6.7nC @ 10V
270pF @ 25V
±30V
-
850mW (Ta), 20W (Tc)
870 mOhm @ 1.5A, 10V
150°C (TJ)
Surface Mount
CPT3
TO-252-3, DPak (2 Leads + Tab), SC-63
RDD023N50TL
Rohm Semiconductor

MOSFET N-CH 500V 2A CPT3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 151pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 20W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.4 Ohm @ 1A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: CPT3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63
在庫2,880
MOSFET (Metal Oxide)
500V
2A (Tc)
4V, 10V
2V @ 1mA
11nC @ 10V
151pF @ 25V
±20V
-
20W (Tc)
5.4 Ohm @ 1A, 10V
150°C (TJ)
Surface Mount
CPT3
TO-252-3, DPak (2 Leads + Tab), SC-63
hot RSR025N03TL
Rohm Semiconductor

MOSFET N-CH 30V 2.5A TSMT3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 10V
  • Vgs (Max): 20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 70 mOhm @ 2.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT3
  • Package / Case: SC-96
パッケージ: SC-96
在庫710,820
MOSFET (Metal Oxide)
30V
2.5A (Ta)
4V, 10V
2.5V @ 1mA
4.1nC @ 5V
165pF @ 10V
20V
-
1W (Ta)
70 mOhm @ 2.5A, 10V
150°C (TJ)
Surface Mount
TSMT3
SC-96
RF4E075ATTCR
Rohm Semiconductor

MOSFET P-CH 30V 7.5A 8DFN

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 21.7 mOhm @ 7.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-HUML2020L8 (2x2)
  • Package / Case: 8-PowerUDFN
パッケージ: 8-PowerUDFN
在庫2,320
MOSFET (Metal Oxide)
30V
7.5A (Ta)
4.5V, 10V
2.5V @ 1mA
22nC @ 10V
1000pF @ 15V
±20V
-
2W (Ta)
21.7 mOhm @ 7.5A, 10V
150°C (TJ)
Surface Mount
6-HUML2020L8 (2x2)
8-PowerUDFN
R6002ENDTL
Rohm Semiconductor

MOSFET N-CH 600V 1.7A CPT3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 65pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 20W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.4 Ohm @ 500mA, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: CPT3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63
在庫5,040
MOSFET (Metal Oxide)
600V
1.7A (Tc)
10V
4V @ 1mA
6.5nC @ 10V
65pF @ 25V
±20V
-
20W (Tc)
3.4 Ohm @ 500mA, 10V
150°C (TJ)
Surface Mount
CPT3
TO-252-3, DPak (2 Leads + Tab), SC-63
hot QS5U27TR
Rohm Semiconductor

MOSFET P-CH 20V 1.5A TSMT5

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 1.25W (Ta)
  • Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.5A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT5
  • Package / Case: SOT-23-5 Thin, TSOT-23-5
パッケージ: SOT-23-5 Thin, TSOT-23-5
在庫129,528
MOSFET (Metal Oxide)
20V
1.5A (Ta)
2.5V, 4.5V
2V @ 1mA
4.2nC @ 4.5V
325pF @ 10V
±12V
Schottky Diode (Isolated)
1.25W (Ta)
200 mOhm @ 1.5A, 4.5V
150°C (TJ)
Surface Mount
TSMT5
SOT-23-5 Thin, TSOT-23-5
RS1E280BNTB
Rohm Semiconductor

MOSFET N-CH 30V 28A 8HSOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 28A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HSOP
  • Package / Case: 8-PowerTDFN
パッケージ: 8-PowerTDFN
在庫5,536
MOSFET (Metal Oxide)
30V
28A (Ta)
4.5V, 10V
2.5V @ 1mA
94nC @ 10V
5100pF @ 15V
±20V
-
3W (Ta), 30W (Tc)
2.3 mOhm @ 28A, 10V
150°C (TJ)
Surface Mount
8-HSOP
8-PowerTDFN
RS1E170GNTB
Rohm Semiconductor

MOSFET N-CH 30V 17A 8-HSOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 23.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 17A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HSOP
  • Package / Case: 8-PowerTDFN
パッケージ: 8-PowerTDFN
在庫5,424
MOSFET (Metal Oxide)
30V
17A (Ta)
4.5V, 10V
2.5V @ 1mA
12nC @ 10V
720pF @ 15V
±20V
-
3W (Ta), 23.7W (Tc)
6.7 mOhm @ 17A, 10V
150°C (TJ)
Surface Mount
8-HSOP
8-PowerTDFN
hot RTF015P02TL
Rohm Semiconductor

MOSFET P-CH 20V 1.5A TUMT3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta)
  • Rds On (Max) @ Id, Vgs: 135 mOhm @ 1.5A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TUMT3
  • Package / Case: 3-SMD, Flat Leads
パッケージ: 3-SMD, Flat Leads
在庫405,360
MOSFET (Metal Oxide)
20V
1.5A (Ta)
2.5V, 4.5V
2V @ 1mA
5.2nC @ 4.5V
560pF @ 10V
±12V
-
800mW (Ta)
135 mOhm @ 1.5A, 4.5V
150°C (TJ)
Surface Mount
TUMT3
3-SMD, Flat Leads
RQ6P015SPTR
Rohm Semiconductor

MOSFET P-CH 100V 1.5A TSMT

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 322nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 600mW (Ta)
  • Rds On (Max) @ Id, Vgs: 470 mOhm @ 1.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT6 (SC-95)
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
パッケージ: SOT-23-6 Thin, TSOT-23-6
在庫7,920
MOSFET (Metal Oxide)
100V
1.5A (Ta)
4V, 10V
2.5V @ 1mA
322nC @ 10V
950pF @ 25V
±20V
-
600mW (Ta)
470 mOhm @ 1.5A, 10V
150°C (TJ)
Surface Mount
TSMT6 (SC-95)
SOT-23-6 Thin, TSOT-23-6
hot RUF025N02TL
Rohm Semiconductor

MOSFET N-CH 20V 2.5A TUMT3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 10V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 320mW (Ta)
  • Rds On (Max) @ Id, Vgs: 54 mOhm @ 2.5A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TUMT3
  • Package / Case: 3-SMD, Flat Leads
パッケージ: 3-SMD, Flat Leads
在庫534,876
MOSFET (Metal Oxide)
20V
2.5A (Ta)
1.5V, 4.5V
1.3V @ 1mA
5nC @ 4.5V
370pF @ 10V
±10V
-
320mW (Ta)
54 mOhm @ 2.5A, 4.5V
150°C (TJ)
Surface Mount
TUMT3
3-SMD, Flat Leads
ES6U3T2CR
Rohm Semiconductor

MOSFET N-CH 30V 1.4A WEMT6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 240 mOhm @ 1.4A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-WEMT
  • Package / Case: SOT-563, SOT-666
パッケージ: SOT-563, SOT-666
在庫2,016
MOSFET (Metal Oxide)
30V
1.4A (Ta)
4V, 10V
2.5V @ 1mA
1.4nC @ 5V
70pF @ 10V
±20V
Schottky Diode (Isolated)
700mW (Ta)
240 mOhm @ 1.4A, 10V
150°C (TJ)
Surface Mount
6-WEMT
SOT-563, SOT-666
RQ3E180GNTB
Rohm Semiconductor

MOSFET N-CH 30V 18A 8-HSMT

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1520pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 18A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HSMT (3.2x3)
  • Package / Case: 8-PowerVDFN
パッケージ: 8-PowerVDFN
在庫7,424
MOSFET (Metal Oxide)
30V
18A (Ta)
4.5V, 10V
2.5V @ 1mA
22.4nC @ 10V
1520pF @ 15V
±20V
-
2W (Ta)
4.3 mOhm @ 18A, 10V
150°C (TJ)
Surface Mount
8-HSMT (3.2x3)
8-PowerVDFN