Rohm Semiconductor 製品

TCTAL1A476M8R

Rohm Semiconductor

CAP TANT 47UF 10V 20% 1206

• Capacitance: 47µF
• Tolerance: ±20%
• Voltage - Rated: 10V
• Type: Molded
• ESR (Equivalent Series Resistance): -
• Operating Temperature: -55°C ~ 125°C
• Lifetime @ Temp.: -
• Mounting Type: Surface Mount
• Package / Case: 1206 (3216 Metric)
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.047" (1.20mm)
• Lead Spacing: -
• Manufacturer Size Code: AL
• Features: General Purpose
• Failure Rate: -

パッケージ: 1206 (3216 Metric)

2SB1197KT146Q

Rohm Semiconductor

TRANS PNP 32V 0.8A SOT-346

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 800mA
• Voltage - Collector Emitter Breakdown (Max): 32V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 500nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
• Power - Max: 200mW
• Frequency - Transition: 200MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SMT3

パッケージ: TO-236-3, SC-59, SOT-23-3

SDZT15R7.5

Rohm Semiconductor

DIODE ZENER 100MW 7.5V 0603

• Voltage - Zener (Nom) (Vz): 7.5V
• Tolerance: ±5%
• Power - Max: 100mW
• Impedance (Max) (Zzt): -
• Current - Reverse Leakage @ Vr: 500nA @ 400V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Package / Case: 2-SMD, No Lead
• Supplier Device Package: SMD0603

パッケージ: 2-SMD, No Lead

RBR1MM40ATR

Rohm Semiconductor

DIODE SCHOTTKY 40V 1A PMDU

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 520mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50µA @ 40V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: PMDU
• Operating Temperature - Junction: 150°C (Max)

パッケージ: SOD-123F

BU4916F-TR

Rohm Semiconductor

IC VOLT DETECTOR STD 4-SOP

• Type: Simple Reset/Power-On Reset
• Number of Voltages Monitored: 1
• Output: Push-Pull, Totem Pole
• Reset: Active High/Active Low
• Reset Timeout: -
• Voltage - Threshold: 1.6V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 4-TSOP (0.049", 1.25mm Width)
• Supplier Device Package: 4-SOP

パッケージ: 4-TSOP (0.049", 1.25mm Width)

BD5323G-TR

Rohm Semiconductor

IC DETECTOR VOLT 2.3V CMOS 5SSOP

• Type: Simple Reset/Power-On Reset
• Number of Voltages Monitored: 1
• Output: Push-Pull, Totem Pole
• Reset: Active Low
• Reset Timeout: -
• Voltage - Threshold: 2.3V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: 5-SSOP

パッケージ: SC-74A, SOT-753

BU97930MUV-BZE2

Rohm Semiconductor

IC LCD DVR 27X4COM IND 40VQFN

• Display Type: LCD
• Configuration: 108 Segment
• Interface: 3-Wire Serial
• Digits or Characters: -
• Current - Supply: -
• Voltage - Supply: 1.8 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 40-VFQFN Exposed Pad
• Supplier Device Package: VQFN040-V6060

パッケージ: 40-VFQFN Exposed Pad

BR24T16NUX-WTR

Rohm Semiconductor

IC EEPROM 16KBIT 400KHZ 8VSON

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 16Kb (2K x 8)
• Memory Interface: I2C
• Clock Frequency: 400kHz
• Write Cycle Time - Word, Page: 5ms
• Access Time: -
• Voltage - Supply: 1.6 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-UFDFN Exposed Pad
• Supplier Device Package: VSON008X2030

パッケージ: 8-UFDFN Exposed Pad

BU7266SF-E2

Rohm Semiconductor

IC OPAMP I/O FULL SWING 8SOIC

• Amplifier Type: CMOS
• Number of Circuits: 2
• Output Type: -
• Slew Rate: 0.0024 V/µs
• Gain Bandwidth Product: 4kHz
• -3db Bandwidth: -
• Current - Input Bias: 1pA
• Voltage - Input Offset: 1mV
• Current - Supply: 700nA
• Current - Output / Channel: 4mA
• Voltage - Supply, Single/Dual (±): 1.8 V ~ 5.5 V
• Operating Temperature: -40°C ~ 105°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.173", 4.40mm Width)
• Supplier Device Package: 8-SOP

パッケージ: 8-SOIC (0.173", 4.40mm Width)

SLI-343U8RC3F

Rohm Semiconductor

LED RED CLEAR 3MM ROUND T/H

• Color: Red
• Configuration: -
• Lens Color: Red
• Lens Transparency: Clear
• Millicandela Rating: 330mcd
• Lens Style/Size: Round with Domed Top, 3.10mm
• Voltage - Forward (Vf) (Typ): 2.2V
• Current - Test: 20mA
• Viewing Angle: 40°
• Mounting Type: Through Hole
• Wavelength - Dominant: 620nm
• Wavelength - Peak: -
• Features: -
• Package / Case: Radial
• Supplier Device Package: T-1
• Size / Dimension: -
• Height (Max): 5.60mm

パッケージ: Radial

MCR10EZPF84R5

Rohm Semiconductor

RES SMD 84.5 OHM 1% 1/8W 0805

• Resistance: 84.5 Ohms
• Tolerance: ±1%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

パッケージ: 0805 (2012 Metric)

MCR25JZHJLR22

Rohm Semiconductor

RES SMD 0.22 OHM 5% 1/2W 1210

• Resistance: 220 mOhms
• Tolerance: ±5%
• Power (Watts): 0.5W, 1/2W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1210 (3225 Metric)
• Supplier Device Package: 1210
• Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
• Height - Seated (Max): 0.028" (0.70mm)
• Number of Terminations: 2
• Failure Rate: -

パッケージ: 1210 (3225 Metric)

MCR10EZHF6650

Rohm Semiconductor

RES SMD 665 OHM 1% 1/8W 0805

• Resistance: 665 Ohms
• Tolerance: ±1%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

パッケージ: 0805 (2012 Metric)

MCR10EZHFL3R90

Rohm Semiconductor

RES SMD 3.9 OHM 1% 1/4W 0805

• Resistance: 3.9 Ohms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±250ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

パッケージ: 0805 (2012 Metric)

MCR03EZPFX6190

Rohm Semiconductor

RES SMD 619 OHM 1% 1/10W 0603

• Resistance: 619 Ohms
• Tolerance: ±1%
• Power (Watts): 0.1W, 1/10W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

パッケージ: 0603 (1608 Metric)

MCR03EZPFX1020

Rohm Semiconductor

RES SMD 102 OHM 1% 1/10W 0603

• Resistance: 102 Ohms
• Tolerance: ±1%
• Power (Watts): 0.1W, 1/10W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

パッケージ: 0603 (1608 Metric)

ESR25JZPF1204

Rohm Semiconductor

RES SMD 1.2M OHM 1% 1/2W 1210

• Resistance: 1.2 MOhms
• Tolerance: ±1%
• Power (Watts): 0.5W, 1/2W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Pulse Withstanding
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1210 (3225 Metric)
• Supplier Device Package: 1210
• Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

パッケージ: 1210 (3225 Metric)

KTR18EZPF18R0

Rohm Semiconductor

RES SMD 18 OHM 1% 1/4W 1206

• Resistance: 18 Ohms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: Automotive AEC-Q200, High Voltage
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

パッケージ: 1206 (3216 Metric)

KTR03EZPJ241

Rohm Semiconductor

RES SMD 240 OHM 5% 1/10W 0603

• Resistance: 240 Ohms
• Tolerance: ±5%
• Power (Watts): 0.1W, 1/10W
• Composition: Thick Film
• Features: Automotive AEC-Q200, High Voltage
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

パッケージ: 0603 (1608 Metric)

PMR50HZPFV2L00

Rohm Semiconductor

RES SMD 0.002 OHM 1% 1W 2010

• Resistance: 2 mOhms
• Tolerance: ±1%
• Power (Watts): 1W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Current Sense
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 2010 (5025 Metric)
• Supplier Device Package: 2010
• Size / Dimension: 0.197" L x 0.098" W (5.00mm x 2.50mm)
• Height - Seated (Max): 0.019" (0.47mm)
• Number of Terminations: 2
• Failure Rate: -

パッケージ: 2010 (5025 Metric)

KTR03EZPF1103

Rohm Semiconductor

RES SMD 110K OHM 1% 1/10W 0603

• Resistance: 110 kOhms
• Tolerance: ±1%
• Power (Watts): 0.1W, 1/10W
• Composition: Thick Film
• Features: Automotive AEC-Q200, High Voltage
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

パッケージ: 0603 (1608 Metric)

MCR10ERTF54R9

Rohm Semiconductor

RES SMD 54.9 OHM 1% 1/8W 0805

• Resistance: 54.9 Ohms
• Tolerance: ±1%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

パッケージ: 0805 (2012 Metric)

MCR10ERTF2260

Rohm Semiconductor

RES SMD 226 OHM 1% 1/8W 0805

• Resistance: 226 Ohms
• Tolerance: ±1%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

パッケージ: 0805 (2012 Metric)

MCR006YRTF43R0

Rohm Semiconductor

RES SMD 43 OHM 1% 1/20W 0201

• Resistance: 43 Ohms
• Tolerance: ±1%
• Power (Watts): 0.05W, 1/20W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±250ppm/°C
• Operating Temperature: -55°C ~ 125°C
• Package / Case: 0201 (0603 Metric)
• Supplier Device Package: 0201
• Size / Dimension: 0.024" L x 0.012" W (0.60mm x 0.30mm)
• Height - Seated (Max): 0.010" (0.26mm)
• Number of Terminations: 2
• Failure Rate: -

パッケージ: 0201 (0603 Metric)

SCT3017ALGC11

Rohm Semiconductor

650V, 118A, THD, TRENCH-STRUCTUR

• FET Type: N-Channel
• Technology: SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 118A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 18V
• Vgs(th) (Max) @ Id: 5.6V @ 23.5mA
• Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 18 V
• Input Capacitance (Ciss) (Max) @ Vds: 2884 pF @ 500 V
• Vgs (Max): +22V, -4V
• FET Feature: -
• Power Dissipation (Max): 427W
• Rds On (Max) @ Id, Vgs: 22.1mOhm @ 47A, 18V
• Operating Temperature: 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247N
• Package / Case: TO-247-3

パッケージ: -

RD3P01BATTL1

Rohm Semiconductor

PCH -100V -10A POWER MOSFET: RD3

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 19.4 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 50 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 25W (Ta)
• Rds On (Max) @ Id, Vgs: 240mOhm @ 5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

パッケージ: -

RQ1E050RPFRATR

Rohm Semiconductor

PCH -30V -5A SMALL SIGNAL MOSFET

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.1W (Ta)
• Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TSMT8
• Package / Case: 8-SMD, Flat Lead

パッケージ: -

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RS6L120BHTB1

Rohm Semiconductor

NCH 60V 150A, HSOP8, POWER MOSFE

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 150A (Ta), 120A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 4080 pF @ 30 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3W (Ta), 104W (Tc)
• Rds On (Max) @ Id, Vgs: 2.7mOhm @ 90A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-HSOP
• Package / Case: 8-PowerTDFN

パッケージ: -

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