Rohm Semiconductor 製品

RS1E240GNTB

Rohm Semiconductor

MOSFET N-CH 30V 24A 8-HSOP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3W (Ta), 27.4W (Tc)
• Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 24A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-HSOP
• Package / Case: 8-PowerTDFN

パッケージ: 8-PowerTDFN

DTC114EUAT106

Rohm Semiconductor

TRANS PREBIAS NPN 200MW UMT3

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 10k
• Resistor - Emitter Base (R2) (Ohms): 10k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: UMT3

パッケージ: SC-70, SOT-323

UMA3NTR

Rohm Semiconductor

TRANS PREBIAS DUAL PNP UMT5

• Transistor Type: 2 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 4.7k
• Resistor - Emitter Base (R2) (Ohms): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA (ICBO)
• Frequency - Transition: 250MHz
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: 5-TSSOP, SC-70-5, SOT-353
• Supplier Device Package: UMT5

パッケージ: 5-TSSOP, SC-70-5, SOT-353

MTZJT-724.3A

Rohm Semiconductor

DIODE ZENER 4.3V 500MW DO34

• Voltage - Zener (Nom) (Vz): 4.3V
• Tolerance: ±3%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 100 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: DO-204AG, DO-34, Axial
• Supplier Device Package: MSD

パッケージ: DO-204AG, DO-34, Axial

TFZTR9.1B

Rohm Semiconductor

DIODE ZENER 9.1V 500MW TUMD2

• Voltage - Zener (Nom) (Vz): 9.1V
• Tolerance: -
• Power - Max: 500mW
• Impedance (Max) (Zzt): -
• Current - Reverse Leakage @ Vr: -
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SC-90, SOD-323F
• Supplier Device Package: TUMD2

パッケージ: SC-90, SOD-323F

BD9739KN-E2

Rohm Semiconductor

IC REG SW BUILT IN FET 64UQFN

• Applications: Controller, Digital Camera
• Voltage - Input: 1.5 V ~ 10 V
• Number of Outputs: 7
• Voltage - Output: -
• Operating Temperature: -25°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 64-VFQFN
• Supplier Device Package: 64-UQFN

パッケージ: 64-VFQFN

BU4309F-TR

Rohm Semiconductor

IC DETECTOR VOLT 0.9V CMOS 4SOP

• Type: Simple Reset/Power-On Reset
• Number of Voltages Monitored: 1
• Output: Push-Pull, Totem Pole
• Reset: Active Low
• Reset Timeout: Adjustable/Selectable
• Voltage - Threshold: 0.9V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: SC-82
• Supplier Device Package: 4-SOP

パッケージ: SC-82

BDE0600G-TR

Rohm Semiconductor

IC TEMP SENSOR THERM 60C 5-SSOP

• Trip Temperature Threshold: Hot
• Switching Temperature: 60°C
• Accuracy: ±4°C
• Current - Output (Max): 5mA
• Output Type: Open Drain
• Output: Active Low
• Output Function: /OverTemp, VTemp
• Selectable Hysteresis: No
• Features: -
• Voltage - Supply: 2.9 V ~ 5.5 V
• Current - Supply: 16µA
• Operating Temperature: -30°C ~ 130°C
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: 5-SSOP

パッケージ: SC-74A, SOT-753

KXRB5-2042

Rohm Semiconductor

ACCELEROMETER

• Type: Analog, Digital
• Axis: X, Y, Z
• Acceleration Range: ±2g
• Sensitivity (LSB/g): -
• Sensitivity (mV/g): 600
• Bandwidth: 1kHz
• Output Type: Analog, SPI
• Voltage - Supply: 2.5 V ~ 5.25 V
• Features: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

MCR004YZPF4702

Rohm Semiconductor

RES SMD 47K OHM 1% 1/32W 01005

• Resistance: 47 kOhms
• Tolerance: ±1%
• Power (Watts): 0.03W, 1/32W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±250ppm/°C
• Operating Temperature: -55°C ~ 125°C
• Package / Case: 01005 (0402 Metric)
• Supplier Device Package: 01005
• Size / Dimension: 0.016" L x 0.008" W (0.40mm x 0.20mm)
• Height - Seated (Max): 0.006" (0.15mm)
• Number of Terminations: 2
• Failure Rate: -

パッケージ: 01005 (0402 Metric)

MCR18EZPF2703

Rohm Semiconductor

RES SMD 270K OHM 1% 1/4W 1206

• Resistance: 270 kOhms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

パッケージ: 1206 (3216 Metric)

MCR18EZHF49R9

Rohm Semiconductor

RES SMD 49.9 OHM 1% 1/4W 1206

• Resistance: 49.9 Ohms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

パッケージ: 1206 (3216 Metric)

MCR10EZHF1500

Rohm Semiconductor

RES SMD 150 OHM 1% 1/8W 0805

• Resistance: 150 Ohms
• Tolerance: ±1%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

パッケージ: 0805 (2012 Metric)

MCR03EZPFX6203

Rohm Semiconductor

RES SMD 620K OHM 1% 1/10W 0603

• Resistance: 620 kOhms
• Tolerance: ±1%
• Power (Watts): 0.1W, 1/10W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

パッケージ: 0603 (1608 Metric)

KTR18EZPF1400

Rohm Semiconductor

RES SMD 140 OHM 1% 1/4W 1206

• Resistance: 140 Ohms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: Automotive AEC-Q200, High Voltage
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

パッケージ: 1206 (3216 Metric)

KTR18EZPJ161

Rohm Semiconductor

RES SMD 160 OHM 5% 1/4W 1206

• Resistance: 160 Ohms
• Tolerance: ±5%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: Automotive AEC-Q200, High Voltage
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

パッケージ: 1206 (3216 Metric)

TRR03EZPJ680

Rohm Semiconductor

RES SMD 68 OHM 5% 1/10W 0603

• Resistance: 68 Ohms
• Tolerance: ±5%
• Power (Watts): 0.1W, 1/10W
• Composition: Thick Film
• Features: Anti-Sulfur
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

パッケージ: 0603 (1608 Metric)

KTR18EZPJ470

Rohm Semiconductor

RES SMD 47 OHM 5% 1/4W 1206

• Resistance: 47 Ohms
• Tolerance: ±5%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: Automotive AEC-Q200, High Voltage
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

パッケージ: 1206 (3216 Metric)

MCR03ERTF3302

Rohm Semiconductor

RES SMD 33K OHM 1% 1/10W 0603

• Resistance: 33 kOhms
• Tolerance: ±1%
• Power (Watts): 0.1W, 1/10W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

パッケージ: 0603 (1608 Metric)

MCR18ERTF3602

Rohm Semiconductor

RES SMD 36K OHM 1% 1/4W 1206

• Resistance: 36 kOhms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.120" L x 0.061" W (3.05mm x 1.55mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

パッケージ: 1206 (3216 Metric)

MCR18ERTF2491

Rohm Semiconductor

RES SMD 2.49K OHM 1% 1/4W 1206

• Resistance: 2.49 kOhms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.120" L x 0.061" W (3.05mm x 1.55mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

パッケージ: 1206 (3216 Metric)

BR24A16F-WME2

Rohm Semiconductor

EEPROM SERIAL-I2C 16K-BIT 2K X 8

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 16Kb (2K x 8)
• Memory Interface: I²C
• Clock Frequency: 400kHz
• Write Cycle Time - Word, Page: 5ms
• Access Time: -
• Voltage - Supply: 2.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.173", 4.40mm Width)
• Supplier Device Package: 8-SOP

パッケージ: 8-SOIC (0.173", 4.40mm Width)

2SC4102U3T106S

Rohm Semiconductor

TRANS PNP 60V 0.05A SOT223-3

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 50 mA
• Voltage - Collector Emitter Breakdown (Max): 60 V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 600mA, 6A
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V
• Power - Max: 1.2 W
• Frequency - Transition: 100MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223-3

パッケージ: -

YDZVFHTR5-6

Rohm Semiconductor

DIODE ZENER 5.6V 500MW TUMD2M

• Voltage - Zener (Nom) (Vz): 5.6 V
• Tolerance: ±8.93%
• Power - Max: 500 mW
• Impedance (Max) (Zzt): -
• Current - Reverse Leakage @ Vr: 10 µA @ 2.5 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 2-SMD, Flat Lead
• Supplier Device Package: TUMD2M

パッケージ: -

RFN3BGE6STL

Rohm Semiconductor

DIODE GEN PURP 600V 3A TO252

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 3 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 30 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 600 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252
• Operating Temperature - Junction: 150°C (Max)

パッケージ: -

RB168VWM-40TR

Rohm Semiconductor

DIODE SCHOTTKY 40V 1A PMDE

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 690 mV @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500 nA @ 40 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: 2-SMD, Flat Lead
• Supplier Device Package: PMDE
• Operating Temperature - Junction: 175°C

パッケージ: -

RB510VM-40TE-17

Rohm Semiconductor

DIODE SCHOTTKY 40V 100MA UMD2

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40 V
• Current - Average Rectified (Io): 100mA
• Voltage - Forward (Vf) (Max) @ If: 480 mV @ 10 mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 2 µA @ 40 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SC-90, SOD-323F
• Supplier Device Package: UMD2
• Operating Temperature - Junction: 150°C

パッケージ: -

DTA123JEFRATL

Rohm Semiconductor

TRANS PREBIAS PNP 0.1A EMT3

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): -
• Resistor - Base (R1) (Ohms): 2.2 kOhms
• Resistor - Emitter Base (R2) (Ohms): 47 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): -
• Frequency - Transition: 250 MHz
• Power - Max: 150 mW
• Mounting Type: Surface Mount
• Package / Case: SC-75, SOT-416
• Supplier Device Package: EMT3

パッケージ: -