ページ 7 - STMicroelectronics 製品 - トランジスタ - FET、MOSFET - シングル | Heisener Electronics
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STMicroelectronics 製品 - トランジスタ - FET、MOSFET - シングル

レコード 2,492
ページ  7/84
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在庫
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Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
STWA68N65DM6AG
STMicroelectronics

DISCRETE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.75V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 480W (Tc)
  • Rds On (Max) @ Id, Vgs: 39mOhm @ 36A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 Long Leads
  • Package / Case: TO-247-3
パッケージ: -
Request a Quote
MOSFET (Metal Oxide)
650 V
72A (Tc)
10V
4.75V @ 250µA
118 nC @ 10 V
5900 pF @ 100 V
±25V
-
480W (Tc)
39mOhm @ 36A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247 Long Leads
TO-247-3
STD80N240K6
STMicroelectronics

N-CHANNEL 800 V, 197 MOHM TYP.,

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 25.9 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 400 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 105W (Tc)
  • Rds On (Max) @ Id, Vgs: 220mOhm @ 7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (DPAK)
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
パッケージ: -
在庫12,000
MOSFET (Metal Oxide)
800 V
16A (Tc)
10V
4V @ 100µA
25.9 nC @ 10 V
1350 pF @ 400 V
±30V
-
105W (Tc)
220mOhm @ 7A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
STP80N70F4
STMicroelectronics

MOSFET N-CH 68V 85A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 68 V
  • Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.8mOhm @ 40A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
パッケージ: -
Request a Quote
MOSFET (Metal Oxide)
68 V
85A (Tc)
10V
4V @ 250µA
90 nC @ 10 V
5600 pF @ 25 V
±20V
-
150W (Tc)
9.8mOhm @ 40A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220
TO-220-3
STL22N60DM6
STMicroelectronics

MOSFET N-CH 650V 15A PWRFLAT HV

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.75V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20.6 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 102W (Tc)
  • Rds On (Max) @ Id, Vgs: 265mOhm @ 6.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerFlat™ (8x8) HV
  • Package / Case: 8-PowerVDFN
パッケージ: -
Request a Quote
MOSFET (Metal Oxide)
600 V
13A (Tc)
10V
4.75V @ 250µA
20.6 nC @ 10 V
800 pF @ 100 V
±25V
-
102W (Tc)
265mOhm @ 6.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerFlat™ (8x8) HV
8-PowerVDFN
STL170N4LF8
STMicroelectronics

POWER FLAT 8L 6X5X1 P1.27

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
パッケージ: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
STFU14N80K5
STMicroelectronics

MOSFET N-CH 800V 12A TO220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 445mOhm @ 6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
パッケージ: -
Request a Quote
MOSFET (Metal Oxide)
800 V
12A (Tc)
10V
5V @ 100µA
22 nC @ 10 V
620 pF @ 100 V
±30V
-
30W (Tc)
445mOhm @ 6A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
SCTWA40N120G2V-4
STMicroelectronics

DISCRETE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 4.9V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1233 pF @ 800 V
  • Vgs (Max): +18V, -5V
  • FET Feature: -
  • Power Dissipation (Max): 277W (Tc)
  • Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 18V
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4
  • Package / Case: TO-247-4
パッケージ: -
Request a Quote
MOSFET (Metal Oxide)
1200 V
36A (Tc)
18V
4.9V @ 1mA
61 nC @ 18 V
1233 pF @ 800 V
+18V, -5V
-
277W (Tc)
100mOhm @ 20A, 18V
-55°C ~ 200°C (TJ)
Through Hole
TO-247-4
TO-247-4
STWA75N60DM6
STMicroelectronics

MOSFET N-CH 600V 72A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 Long Leads
  • Package / Case: TO-247-3
パッケージ: -
在庫1,083
MOSFET (Metal Oxide)
600 V
72A (Tc)
-
-
-
-
±25V
-
-
-
-
Through Hole
TO-247 Long Leads
TO-247-3
STL17N60M6
STMicroelectronics

MOSFET N-CH 600V 10A PWRFLAT HV

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.75V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 575 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 90W (Tc)
  • Rds On (Max) @ Id, Vgs: 350mOhm @ 6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerFlat™ (8x8) HV
  • Package / Case: 8-PowerVDFN
パッケージ: -
Request a Quote
MOSFET (Metal Oxide)
600 V
10A (Tc)
10V
4.75V @ 250µA
16.7 nC @ 10 V
575 pF @ 100 V
±25V
-
90W (Tc)
350mOhm @ 6A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerFlat™ (8x8) HV
8-PowerVDFN
STL195N4F7AG
STMicroelectronics

DISCRETE

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
パッケージ: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
STH13N120K5-2AG
STMicroelectronics

MOSFET N-CH 1200V 12A H2PAK-2

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 44.2 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 690mOhm @ 6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: H2PAK-2
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
パッケージ: -
在庫11,250
MOSFET (Metal Oxide)
1200 V
12A (Tc)
10V
5V @ 100µA
44.2 nC @ 10 V
1370 pF @ 100 V
±30V
-
250W (Tc)
690mOhm @ 6A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
H2PAK-2
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SCT040W120G3AG
STMicroelectronics

HIP-247 IN LINE HEAT SINK 2MM

  • FET Type: N-Channel
  • Technology: SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
  • Vgs(th) (Max) @ Id: 4.2V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1329 pF @ 800 V
  • Vgs (Max): +22V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 312W (Tc)
  • Rds On (Max) @ Id, Vgs: 54mOhm @ 16A, 18V
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: HiP247™
  • Package / Case: TO-247-3
パッケージ: -
Request a Quote
SiC (Silicon Carbide Junction Transistor)
1200 V
40A (Tc)
15V, 18V
4.2V @ 5mA
56 nC @ 18 V
1329 pF @ 800 V
+22V, -10V
-
312W (Tc)
54mOhm @ 16A, 18V
-55°C ~ 200°C (TJ)
Through Hole
HiP247™
TO-247-3
STD70R1K3S
STMicroelectronics

DISCRETE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 700 V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.75V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 77W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.75A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-251 (IPAK)
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
パッケージ: -
Request a Quote
MOSFET (Metal Oxide)
700 V
5A (Tc)
10V
3.75V @ 250µA
4.1 nC @ 10 V
175 pF @ 100 V
±25V
-
77W (Tc)
1.4Ohm @ 1.75A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-251 (IPAK)
TO-251-3 Short Leads, IPak, TO-251AA
STD6N60DM2
STMicroelectronics

MOSFET N-CH 600V 5A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.75V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 274 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (DPAK)
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
パッケージ: -
Request a Quote
MOSFET (Metal Oxide)
600 V
5A (Tc)
10V
4.75V @ 250µA
6.2 nC @ 10 V
274 pF @ 100 V
±25V
-
60W (Tc)
1.1Ohm @ 2.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
STF24N60M6
STMicroelectronics

MOSFET N-CH 600V TO220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.75V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 190mOhm @ 8.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
パッケージ: -
在庫2,970
MOSFET (Metal Oxide)
600 V
17A (Tj)
10V
4.75V @ 250µA
23 nC @ 10 V
960 pF @ 100 V
±25V
-
30W (Tc)
190mOhm @ 8.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
STB16N90K5
STMicroelectronics

MOSFET N-CH 900V 15A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900 V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 29.7 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1027 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 190W (Tc)
  • Rds On (Max) @ Id, Vgs: 330mOhm @ 7.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2PAK)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
パッケージ: -
在庫4,155
MOSFET (Metal Oxide)
900 V
15A (Tc)
10V
5V @ 100µA
29.7 nC @ 10 V
1027 pF @ 100 V
±30V
-
190W (Tc)
330mOhm @ 7.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
STWA70N60DM6
STMicroelectronics

MOSFET N-CH 600V 62A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 Long Leads
  • Package / Case: TO-247-3
パッケージ: -
Request a Quote
MOSFET (Metal Oxide)
600 V
62A (Tc)
-
-
-
-
±25V
-
-
-
-
Through Hole
TO-247 Long Leads
TO-247-3
STD5NM50AG
STMicroelectronics

MOSFET N-CH 500V 7.5A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 800mOhm @ 2.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (DPAK)
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
パッケージ: -
在庫4,485
MOSFET (Metal Oxide)
500 V
7.5A (Tc)
10V
5V @ 250µA
13 nC @ 10 V
415 pF @ 100 V
±30V
-
100W (Tc)
800mOhm @ 2.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
SCTL35N65G2V
STMicroelectronics

TRANS SJT N-CH 650V PWRFLAT HV

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 400 V
  • Vgs (Max): +22V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 417W (Tc)
  • Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerFlat™ (8x8) HV
  • Package / Case: 8-PowerVDFN
パッケージ: -
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SiCFET (Silicon Carbide)
650 V
40A (Tc)
-
5V @ 1mA
73 nC @ 20 V
1370 pF @ 400 V
+22V, -10V
-
417W (Tc)
67mOhm @ 20A, 20V
-55°C ~ 175°C (TJ)
Surface Mount
PowerFlat™ (8x8) HV
8-PowerVDFN
STWA75N65DM6
STMicroelectronics

N-CHANNEL 650 V, 33 MOHM TYP., 7

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.75V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 480W (Tc)
  • Rds On (Max) @ Id, Vgs: 36mOhm @ 37.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 Long Leads
  • Package / Case: TO-247-3
パッケージ: -
在庫51
MOSFET (Metal Oxide)
650 V
75A (Tc)
10V
4.75V @ 250µA
118 nC @ 10 V
5700 pF @ 100 V
±25V
-
480W (Tc)
36mOhm @ 37.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247 Long Leads
TO-247-3
STP70NS04ZC
STMicroelectronics

MOSFET N-CH 33V 80A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 33 V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1930 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 180W (Tc)
  • Rds On (Max) @ Id, Vgs: 11mOhm @ 40A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
パッケージ: -
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MOSFET (Metal Oxide)
33 V
80A (Tc)
10V
4V @ 1mA
58 nC @ 10 V
1930 pF @ 25 V
±20V
-
180W (Tc)
11mOhm @ 40A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220
TO-220-3
STP80N340K6
STMicroelectronics

DISCRETE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 400 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 115W (Tc)
  • Rds On (Max) @ Id, Vgs: 340mOhm @ 6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
パッケージ: -
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MOSFET (Metal Oxide)
800 V
12A (Tc)
10V
4V @ 100µA
17.8 nC @ 10 V
950 pF @ 400 V
±30V
-
115W (Tc)
340mOhm @ 6A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
SGT120R65AL
STMicroelectronics

650 V, 75 MOHM TYP., 15 A, E-MOD

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V
  • Vgs(th) (Max) @ Id: 2.6V @ 12mA
  • Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 6 V
  • Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 400 V
  • Vgs (Max): +6V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 192W (Tc)
  • Rds On (Max) @ Id, Vgs: 120mOhm @ 5A, 6V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerFlat™ (5x6) HV
  • Package / Case: 8-PowerVDFN
パッケージ: -
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GaNFET (Gallium Nitride)
650 V
15A (Tc)
6V
2.6V @ 12mA
3 nC @ 6 V
125 pF @ 400 V
+6V, -10V
-
192W (Tc)
120mOhm @ 5A, 6V
-55°C ~ 150°C (TJ)
Surface Mount
PowerFlat™ (5x6) HV
8-PowerVDFN
STL325N4F8AG
STMicroelectronics

POWERFLAT 5X6 WF

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 373A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7657 pF @ 25 V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 188W (Tc)
  • Rds On (Max) @ Id, Vgs: 0.75mOhm @ 60A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerFlat™ (5x6)
  • Package / Case: 8-PowerVDFN
パッケージ: -
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MOSFET (Metal Oxide)
40 V
373A (Tc)
4.5V, 10V
2V @ 250µA
95 nC @ 10 V
7657 pF @ 25 V
±16V
-
188W (Tc)
0.75mOhm @ 60A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerFlat™ (5x6)
8-PowerVDFN
STL52N60DM6
STMicroelectronics

N-CHANNEL 600 V, 0.084 OHM TYP.,

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.75V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2468 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 174W (Tc)
  • Rds On (Max) @ Id, Vgs: 84mOhm @ 22.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerFlat™ (8x8) HV
  • Package / Case: 8-PowerVDFN
パッケージ: -
在庫8,049
MOSFET (Metal Oxide)
600 V
45A (Tc)
10V
4.75V @ 250µA
52 nC @ 10 V
2468 pF @ 100 V
±25V
-
174W (Tc)
84mOhm @ 22.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerFlat™ (8x8) HV
8-PowerVDFN
STL165N10F8AG
STMicroelectronics

POWERFLAT 5X6 WF

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
パッケージ: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
STD16N60M6
STMicroelectronics

MOSFET N-CH 600V 12A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.75V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 575 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 320mOhm @ 6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (DPAK)
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
パッケージ: -
在庫7,371
MOSFET (Metal Oxide)
600 V
12A (Tc)
10V
4.75V @ 250µA
16.7 nC @ 10 V
575 pF @ 100 V
±25V
-
110W (Tc)
320mOhm @ 6A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
STW75N65DM6-4
STMicroelectronics

N-CHANNEL 650 V, 33 MOHM TYP., 7

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.75V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 480W (Tc)
  • Rds On (Max) @ Id, Vgs: 36mOhm @ 37.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4
  • Package / Case: TO-247-4
パッケージ: -
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MOSFET (Metal Oxide)
650 V
75A (Tc)
10V
4.75V @ 250µA
118 nC @ 10 V
5700 pF @ 100 V
±25V
-
480W (Tc)
36mOhm @ 37.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247-4
TO-247-4
STWA38N65DM6AG
STMicroelectronics

DISCRETE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.75V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 54.4 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2805 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 347W (Tc)
  • Rds On (Max) @ Id, Vgs: 82mOhm @ 21A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 Long Leads
  • Package / Case: TO-247-3
パッケージ: -
Request a Quote
MOSFET (Metal Oxide)
650 V
42A (Tc)
10V
4.75V @ 250µA
54.4 nC @ 10 V
2805 pF @ 100 V
±25V
-
347W (Tc)
82mOhm @ 21A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247 Long Leads
TO-247-3
STWA60N043DM9
STMicroelectronics

N-CHANNEL 600 V, 38 MOHM TYP., 5

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 78.6 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4675 pF @ 400 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 312W (Tc)
  • Rds On (Max) @ Id, Vgs: 43mOhm @ 28A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 Long Leads
  • Package / Case: TO-247-3
パッケージ: -
在庫537
MOSFET (Metal Oxide)
600 V
56A (Tc)
10V
4.5V @ 250µA
78.6 nC @ 10 V
4675 pF @ 400 V
±30V
-
312W (Tc)
43mOhm @ 28A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247 Long Leads
TO-247-3