Taiwan Semiconductor Corporation 製品

BZD27C13P RFG

Taiwan Semiconductor Corporation

DIODE, ZENER, 13V, 1000MW, %, SU

• Voltage - Zener (Nom) (Vz): 13.25V
• Tolerance: ±6.41%
• Power - Max: 1W
• Impedance (Max) (Zzt): 10 Ohms
• Current - Reverse Leakage @ Vr: 2µA @ 10V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

パッケージ: DO-219AB

1N4750AHB0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 27V, 1000MW, 5%, A

• Voltage - Zener (Nom) (Vz): 27V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 35 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 20.6V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

パッケージ: DO-204AL, DO-41, Axial

BZD17C120P RVG

Taiwan Semiconductor Corporation

DIODE, ZENER, 120V, 800MW, %, SU

• Voltage - Zener (Nom) (Vz): 120V
• Tolerance: ±5.41%
• Power - Max: 800mW
• Impedance (Max) (Zzt): 300 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 91V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

パッケージ: DO-219AB

1SMA5956 R3G

Taiwan Semiconductor Corporation

DIODE, ZENER, 200V, 1500MW, 5%,

• Voltage - Zener (Nom) (Vz): 200V
• Tolerance: ±5%
• Power - Max: 1.5W
• Impedance (Max) (Zzt): 1200 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 152V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

パッケージ: DO-214AC, SMA

1SMA5933 R3G

Taiwan Semiconductor Corporation

DIODE, ZENER, 22V, 1500MW, 5%, D

• Voltage - Zener (Nom) (Vz): 22V
• Tolerance: ±5%
• Power - Max: 1.5W
• Impedance (Max) (Zzt): 17.5 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 16.7V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

パッケージ: DO-214AC, SMA

1SMA4762 R3G

Taiwan Semiconductor Corporation

DIODE, ZENER, 82V, 1000MW, %, DO

• Voltage - Zener (Nom) (Vz): 82V
• Tolerance: ±5%
• Power - Max: 1.25W
• Impedance (Max) (Zzt): 200 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 62.2V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

パッケージ: DO-214AC, SMA

BZX584B8V2 RKG

Taiwan Semiconductor Corporation

DIODE, ZENER, 8.2V, 150MW, 2%, S

• Voltage - Zener (Nom) (Vz): 8.2V
• Tolerance: ±2%
• Power - Max: 150mW
• Impedance (Max) (Zzt): 15 Ohms
• Current - Reverse Leakage @ Vr: 700nA @ 5V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-79, SOD-523
• Supplier Device Package: SOD-523F

パッケージ: SC-79, SOD-523

1M180Z R0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 180V, 1000MW, 5%,

• Voltage - Zener (Nom) (Vz): 180V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 1200 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 136.8V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

パッケージ: DO-204AL, DO-41, Axial

MMSZ5254B RHG

Taiwan Semiconductor Corporation

DIODE, ZENER, 27V, 500MW, 5%, SO

• Voltage - Zener (Nom) (Vz): 27V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 41 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 21V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: SOD-123F

パッケージ: SOD-123F

BZT52C3V0S RRG

Taiwan Semiconductor Corporation

DIODE, ZENER, 3V, 200MW, 5%, SOD

• Voltage - Zener (Nom) (Vz): 3V
• Tolerance: ±5%
• Power - Max: 200mW
• Impedance (Max) (Zzt): 100 Ohms
• Current - Reverse Leakage @ Vr: 9µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-90, SOD-323F
• Supplier Device Package: SOD-323F

パッケージ: SC-90, SOD-323F

BZX79C75 A0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 75V, 500MW, 5%, DO

• Voltage - Zener (Nom) (Vz): 75V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 255 Ohms
• Current - Reverse Leakage @ Vr: 50nA @ 52.5V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 100mA
• Operating Temperature: -65°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35

パッケージ: DO-204AH, DO-35, Axial

BZV55C22 L0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 22V, 500MW, 5%, MM

• Voltage - Zener (Nom) (Vz): 22V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 55 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 16V
• Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
• Operating Temperature: -65°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-213AC, MINI-MELF, SOD-80
• Supplier Device Package: Mini MELF

パッケージ: DO-213AC, MINI-MELF, SOD-80

GBL204H

Taiwan Semiconductor Corporation

2A, 400V, STANDARD BRIDGE RECTIF

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 400 V
• Current - Average Rectified (Io): 2 A
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
• Current - Reverse Leakage @ Vr: 5 µA @ 400 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, GBL
• Supplier Device Package: GBL

パッケージ: -

1PGSMA4747HR3G

Taiwan Semiconductor Corporation

DIODE ZENER 20V 1.25W DO214AC

• Voltage - Zener (Nom) (Vz): 20 V
• Tolerance: ±5%
• Power - Max: 1.25 W
• Impedance (Max) (Zzt): 22 Ohms
• Current - Reverse Leakage @ Vr: 1 µA @ 15.2 V
• Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

パッケージ: -

S1Q

Taiwan Semiconductor Corporation

DIODE GEN PURP 1.2KV 1A DO214AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1 µA @ 1200 V
• Capacitance @ Vr, F: 8pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: -

TS6K60

Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 600V 6A TS4K

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 600 V
• Current - Average Rectified (Io): 6 A
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
• Current - Reverse Leakage @ Vr: 5 µA @ 600 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, GBL
• Supplier Device Package: TS4K

パッケージ: -

ES2GAH

Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 2A DO214AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 400 V
• Capacitance @ Vr, F: 20pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: -

S10JC

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 10A DO214AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1 µA @ 600 V
• Capacitance @ Vr, F: 60pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMC)
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: -

ESH3D-V7G

Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 3A DO214AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 20 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 200 V
• Capacitance @ Vr, F: 45pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMC)
• Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: -

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GP1604H

Taiwan Semiconductor Corporation

DIODE ARRAY GP 400V 16A TO220AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io) (per Diode): 16A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10 µA @ 400 V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

パッケージ: -

BZT52C30S

Taiwan Semiconductor Corporation

SOD-323F, 200MW, 5%, SMALL SIGNA

• Voltage - Zener (Nom) (Vz): 30 V
• Tolerance: ±5%
• Power - Max: 200 mW
• Impedance (Max) (Zzt): 80 Ohms
• Current - Reverse Leakage @ Vr: 45 nA @ 21 V
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-90, SOD-323F
• Supplier Device Package: SOD-323F

パッケージ: -

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2CZ4006-RHG

Taiwan Semiconductor Corporation

DIODE GEN PURP 800V 1A SOD123

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5 µA @ 800 V
• Capacitance @ Vr, F: 15pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: -

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BZT52C6V2S-R9G

Taiwan Semiconductor Corporation

SOD-323F, 200MW, 5%, SMALL SIGNA

• Voltage - Zener (Nom) (Vz): 6.2 V
• Tolerance: ±5%
• Power - Max: 200 mW
• Impedance (Max) (Zzt): 10 Ohms
• Current - Reverse Leakage @ Vr: 2.7 µA @ 4 V
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-90, SOD-323F
• Supplier Device Package: SOD-323F

パッケージ: -

1PGSMC5364H

Taiwan Semiconductor Corporation

DIODE ZENER 33V 5W DO214AB

• Voltage - Zener (Nom) (Vz): 33 V
• Tolerance: ±5%
• Power - Max: 5 W
• Impedance (Max) (Zzt): 10 Ohms
• Current - Reverse Leakage @ Vr: 500 nA @ 25.1 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMC)

パッケージ: -

1SMA5953

Taiwan Semiconductor Corporation

DIODE ZENER 150V 1.5W DO214AC

• Voltage - Zener (Nom) (Vz): 150 V
• Tolerance: ±5%
• Power - Max: 1.5 W
• Impedance (Max) (Zzt): 600 Ohms
• Current - Reverse Leakage @ Vr: 500 nA @ 114 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

パッケージ: -

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1SMA5931

Taiwan Semiconductor Corporation

DIODE ZENER 18V 1.5W DO214AC

• Voltage - Zener (Nom) (Vz): 18 V
• Tolerance: ±5%
• Power - Max: 1.5 W
• Impedance (Max) (Zzt): 12 Ohms
• Current - Reverse Leakage @ Vr: 500 nA @ 13.7 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

パッケージ: -

SF32G

Taiwan Semiconductor Corporation

DIODE GEN PURP 100V 3A DO201AD

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 100 V
• Capacitance @ Vr, F: 80pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: -

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SFAF504G

Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 5A ITO220AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 975 mV @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 200 V
• Capacitance @ Vr, F: 70pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2 Full Pack
• Supplier Device Package: ITO-220AC
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: -