ページ 55 - Taiwan Semiconductor Corporation 製品

部品番号	メーカ	説明	パッケージ	在庫
BZD27C220PHRFG	Taiwan Semiconductor Corporation	DIODE, ZENER, 220V, 1000MW, %, A Voltage - Zener (Nom) (Vz): 220.5V Tolerance: ±5.66% Power - Max: 1W Impedance (Max) (Zzt): 900 Ohms Current - Reverse Leakage @ Vr: 1µA @ 160V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	パッケージ: DO-219AB	在庫5,776
BZD27C9V1P RFG	Taiwan Semiconductor Corporation	DIODE, ZENER, 9.1V, 1000MW, %, S Voltage - Zener (Nom) (Vz): 9.05V Tolerance: ±6.07% Power - Max: 1W Impedance (Max) (Zzt): 4 Ohms Current - Reverse Leakage @ Vr: 10µA @ 5V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	パッケージ: DO-219AB	在庫5,184
BZD27C82P RFG	Taiwan Semiconductor Corporation	DIODE, ZENER, 82V, 1000MW, %, SU Voltage - Zener (Nom) (Vz): 82V Tolerance: ±6.09% Power - Max: 1W Impedance (Max) (Zzt): 200 Ohms Current - Reverse Leakage @ Vr: 1µA @ 62V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	パッケージ: DO-219AB	在庫5,072
2M33Z R0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 33V, 2000MW, %, DO Voltage - Zener (Nom) (Vz): 33V Tolerance: ±5% Power - Max: 2W Impedance (Max) (Zzt): 23 Ohms Current - Reverse Leakage @ Vr: 500nA @ 25.1V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15)	パッケージ: DO-204AC, DO-15, Axial	在庫4,688
BZD27C68PHMTG	Taiwan Semiconductor Corporation	DIODE, ZENER, 68V, 1000MW, %, AE Voltage - Zener (Nom) (Vz): 68V Tolerance: ±5.88% Power - Max: 1W Impedance (Max) (Zzt): 80 Ohms Current - Reverse Leakage @ Vr: 1µA @ 51V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	パッケージ: DO-219AB	在庫3,456
1M160Z R0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 160V, 1000MW, 5%, Voltage - Zener (Nom) (Vz): 160V Tolerance: ±5% Power - Max: 1W Impedance (Max) (Zzt): 1100 Ohms Current - Reverse Leakage @ Vr: 5µA @ 121.6V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41)	パッケージ: DO-204AL, DO-41, Axial	在庫7,040
ZM4755A L0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 43V, 1000MW, 5%, M Voltage - Zener (Nom) (Vz): 43V Tolerance: ±5% Power - Max: 1W Impedance (Max) (Zzt): 70 Ohms Current - Reverse Leakage @ Vr: 5µA @ 32.7V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-213AB, MELF Supplier Device Package: MELF	パッケージ: DO-213AB, MELF	在庫2,624
BZT52C12 RHG	Taiwan Semiconductor Corporation	DIODE, ZENER, 12V, 500MW, 5%, SO Voltage - Zener (Nom) (Vz): 12V Tolerance: ±5% Power - Max: 500mW Impedance (Max) (Zzt): 25 Ohms Current - Reverse Leakage @ Vr: 90nA @ 8V Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123F	パッケージ: SOD-123F	在庫2,880
BZT52B51 RHG	Taiwan Semiconductor Corporation	DIODE, ZENER, 51V, 500MW, 2%, SO Voltage - Zener (Nom) (Vz): 51V Tolerance: ±2% Power - Max: 500mW Impedance (Max) (Zzt): 180 Ohms Current - Reverse Leakage @ Vr: 45nA @ 35.7V Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123F	パッケージ: SOD-123F	在庫4,448
BZV55B4V7 L1G	Taiwan Semiconductor Corporation	DIODE, ZENER, 4.7V, 500MW, 2%, M Voltage - Zener (Nom) (Vz): 4.7V Tolerance: ±2% Power - Max: 500mW Impedance (Max) (Zzt): 60 Ohms Current - Reverse Leakage @ Vr: 500nA @ 1V Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Supplier Device Package: Mini MELF	パッケージ: DO-213AC, MINI-MELF, SOD-80	在庫3,232
BZD27C15P RVG	Taiwan Semiconductor Corporation	DIODE, ZENER, 15V, 1000MW, %, SU Voltage - Zener (Nom) (Vz): 14.7V Tolerance: ±5% Power - Max: 1W Impedance (Max) (Zzt): 10 Ohms Current - Reverse Leakage @ Vr: 1µA @ 11V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	パッケージ: DO-219AB	在庫4,080
BZD27C13P RVG	Taiwan Semiconductor Corporation	DIODE, ZENER, 13V, 1000MW, %, SU Voltage - Zener (Nom) (Vz): 13.25V Tolerance: ±5% Power - Max: 1W Impedance (Max) (Zzt): 10 Ohms Current - Reverse Leakage @ Vr: 2µA @ 10V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	パッケージ: DO-219AB	在庫4,000
1SMA4751 R3G	Taiwan Semiconductor Corporation	DIODE, ZENER, 30V, 1000MW, %, DO Voltage - Zener (Nom) (Vz): 30V Tolerance: ±5% Power - Max: 1.25W Impedance (Max) (Zzt): 40 Ohms Current - Reverse Leakage @ Vr: 1µA @ 22.8V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA)	パッケージ: DO-214AC, SMA	在庫4,096
TS19751ACS RLG	Taiwan Semiconductor Corporation	IC LED DRVR OFFL 8SOP Type: AC DC Offline Switcher Topology: Step-Down (Buck) Internal Switch(s): Yes Number of Outputs: 1 Voltage - Supply (Min): 8V Voltage - Supply (Max): 19V Voltage - Output: - Current - Output / Channel: - Frequency: - Dimming: - Applications: Lighting Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫37,974
HER3L06G	Taiwan Semiconductor Corporation	75NS, 3A, 600V, HIGH EFFICIENT R Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: 54pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: -	Request a Quote
MTZJ5V1SC	Taiwan Semiconductor Corporation	DO-34, 500MW, 2%, SMALL SIGNAL Z Voltage - Zener (Nom) (Vz): 5.1 V Tolerance: ±2% Power - Max: 500 mW Impedance (Max) (Zzt): 80 Ohms Current - Reverse Leakage @ Vr: 5 µA @ 1.5 V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AG, DO-34, Axial Supplier Device Package: DO-34	パッケージ: -	Request a Quote
BZY55B33-RBG	Taiwan Semiconductor Corporation	DIODE ZENER 33V 500MW 0805 Voltage - Zener (Nom) (Vz): 33 V Tolerance: ±2% Power - Max: 500 mW Impedance (Max) (Zzt): 80 Ohms Current - Reverse Leakage @ Vr: 100 nA @ 24 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 0805 (2012 Metric) Supplier Device Package: 0805	パッケージ: -	Request a Quote
BZT52C56-G	Taiwan Semiconductor Corporation	SOD-123, 350MW, 5%, SMALL SIGNAL Voltage - Zener (Nom) (Vz): 56 V Tolerance: ±5% Power - Max: 500 mW Impedance (Max) (Zzt): 200 Ohms Current - Reverse Leakage @ Vr: 45 nA @ 39.2 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123F	パッケージ: -	Request a Quote
PU1JFS	Taiwan Semiconductor Corporation	25NS, 1A, 600V, ULTRA FAST RECOV Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 1 µA @ 600 V Capacitance @ Vr, F: 17pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: SOD-128 Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: -	在庫84,000
BZX79C75	Taiwan Semiconductor Corporation	DO-35, 500MW, 5%, SMALL SIGNAL Z Voltage - Zener (Nom) (Vz): 75 V Tolerance: ±5% Power - Max: 500 mW Impedance (Max) (Zzt): 255 Ohms Current - Reverse Leakage @ Vr: 50 nA @ 52.5 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35	パッケージ: -	Request a Quote
TSM150P04LCS	Taiwan Semiconductor Corporation	-40, -22, SINGLE P-CHANNEL FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2783 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.2W (Ta), 12.5W (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	パッケージ: -	Request a Quote
SRT19H	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 1A TS-1 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 800 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 90 V Capacitance @ Vr, F: 28pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: T-18, Axial Supplier Device Package: TS-1 Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: -	Request a Quote
PU2BM	Taiwan Semiconductor Corporation	25NS, 2A, 100V, ULTRA FAST RECOV Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 28 ns Current - Reverse Leakage @ Vr: 1 µA @ 100 V Capacitance @ Vr, F: 18pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: Micro SMA Operating Temperature - Junction: -55°C ~ 175°C	パッケージ: -	在庫36,000
SF2L6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 2A DO204AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 1 µA @ 400 V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: -	在庫10,500
SR503	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 5A DO201AD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 30 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 125°C	パッケージ: -	Request a Quote
S1MLWH	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 1A SOD123W Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 1000 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123W Operating Temperature - Junction: -55°C ~ 175°C	パッケージ: -	在庫10,020
1N4760AH	Taiwan Semiconductor Corporation	DIODE ZENER 68V 1W DO204AL Voltage - Zener (Nom) (Vz): 68 V Tolerance: ±5% Power - Max: 1 W Impedance (Max) (Zzt): 150 Ohms Current - Reverse Leakage @ Vr: 5 µA @ 51.7 V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41)	パッケージ: -	Request a Quote
SR105H	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 1A DO204AL Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 50 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: -	Request a Quote

BZD27C220PHRFG

Taiwan Semiconductor Corporation

DIODE, ZENER, 220V, 1000MW, %, A

Voltage - Zener (Nom) (Vz): 220.5V
Tolerance: ±5.66%
Power - Max: 1W
Impedance (Max) (Zzt): 900 Ohms
Current - Reverse Leakage @ Vr: 1µA @ 160V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA

パッケージ: DO-219AB

在庫5,776

BZD27C9V1P RFG

Taiwan Semiconductor Corporation

DIODE, ZENER, 9.1V, 1000MW, %, S

Voltage - Zener (Nom) (Vz): 9.05V
Tolerance: ±6.07%
Power - Max: 1W
Impedance (Max) (Zzt): 4 Ohms
Current - Reverse Leakage @ Vr: 10µA @ 5V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA

パッケージ: DO-219AB

在庫5,184

BZD27C82P RFG

Taiwan Semiconductor Corporation

DIODE, ZENER, 82V, 1000MW, %, SU

Voltage - Zener (Nom) (Vz): 82V
Tolerance: ±6.09%
Power - Max: 1W
Impedance (Max) (Zzt): 200 Ohms
Current - Reverse Leakage @ Vr: 1µA @ 62V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA

パッケージ: DO-219AB

在庫5,072

2M33Z R0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 33V, 2000MW, %, DO

Voltage - Zener (Nom) (Vz): 33V
Tolerance: ±5%
Power - Max: 2W
Impedance (Max) (Zzt): 23 Ohms
Current - Reverse Leakage @ Vr: 500nA @ 25.1V
Voltage - Forward (Vf) (Max) @ If: -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)

パッケージ: DO-204AC, DO-15, Axial

在庫4,688

BZD27C68PHMTG

Taiwan Semiconductor Corporation

DIODE, ZENER, 68V, 1000MW, %, AE

Voltage - Zener (Nom) (Vz): 68V
Tolerance: ±5.88%
Power - Max: 1W
Impedance (Max) (Zzt): 80 Ohms
Current - Reverse Leakage @ Vr: 1µA @ 51V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA

パッケージ: DO-219AB

在庫3,456

1M160Z R0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 160V, 1000MW, 5%,

Voltage - Zener (Nom) (Vz): 160V
Tolerance: ±5%
Power - Max: 1W
Impedance (Max) (Zzt): 1100 Ohms
Current - Reverse Leakage @ Vr: 5µA @ 121.6V
Voltage - Forward (Vf) (Max) @ If: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)

パッケージ: DO-204AL, DO-41, Axial

在庫7,040

ZM4755A L0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 43V, 1000MW, 5%, M

Voltage - Zener (Nom) (Vz): 43V
Tolerance: ±5%
Power - Max: 1W
Impedance (Max) (Zzt): 70 Ohms
Current - Reverse Leakage @ Vr: 5µA @ 32.7V
Voltage - Forward (Vf) (Max) @ If: -
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Supplier Device Package: MELF

パッケージ: DO-213AB, MELF

在庫2,624

BZT52C12 RHG

Taiwan Semiconductor Corporation

DIODE, ZENER, 12V, 500MW, 5%, SO

Voltage - Zener (Nom) (Vz): 12V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 25 Ohms
Current - Reverse Leakage @ Vr: 90nA @ 8V
Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123F

パッケージ: SOD-123F

在庫2,880

BZT52B51 RHG

Taiwan Semiconductor Corporation

DIODE, ZENER, 51V, 500MW, 2%, SO

Voltage - Zener (Nom) (Vz): 51V
Tolerance: ±2%
Power - Max: 500mW
Impedance (Max) (Zzt): 180 Ohms
Current - Reverse Leakage @ Vr: 45nA @ 35.7V
Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123F

パッケージ: SOD-123F

在庫4,448

BZV55B4V7 L1G

Taiwan Semiconductor Corporation

DIODE, ZENER, 4.7V, 500MW, 2%, M

Voltage - Zener (Nom) (Vz): 4.7V
Tolerance: ±2%
Power - Max: 500mW
Impedance (Max) (Zzt): 60 Ohms
Current - Reverse Leakage @ Vr: 500nA @ 1V
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: Mini MELF

パッケージ: DO-213AC, MINI-MELF, SOD-80

在庫3,232

BZD27C15P RVG

Taiwan Semiconductor Corporation

DIODE, ZENER, 15V, 1000MW, %, SU

Voltage - Zener (Nom) (Vz): 14.7V
Tolerance: ±5%
Power - Max: 1W
Impedance (Max) (Zzt): 10 Ohms
Current - Reverse Leakage @ Vr: 1µA @ 11V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA

パッケージ: DO-219AB

在庫4,080

BZD27C13P RVG

Taiwan Semiconductor Corporation

DIODE, ZENER, 13V, 1000MW, %, SU

Voltage - Zener (Nom) (Vz): 13.25V
Tolerance: ±5%
Power - Max: 1W
Impedance (Max) (Zzt): 10 Ohms
Current - Reverse Leakage @ Vr: 2µA @ 10V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA

パッケージ: DO-219AB

在庫4,000

1SMA4751 R3G

Taiwan Semiconductor Corporation

DIODE, ZENER, 30V, 1000MW, %, DO

Voltage - Zener (Nom) (Vz): 30V
Tolerance: ±5%
Power - Max: 1.25W
Impedance (Max) (Zzt): 40 Ohms
Current - Reverse Leakage @ Vr: 1µA @ 22.8V
Voltage - Forward (Vf) (Max) @ If: -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)

パッケージ: DO-214AC, SMA

在庫4,096

TS19751ACS RLG

Taiwan Semiconductor Corporation

IC LED DRVR OFFL 8SOP

Type: AC DC Offline Switcher
Topology: Step-Down (Buck)
Internal Switch(s): Yes
Number of Outputs: 1
Voltage - Supply (Min): 8V
Voltage - Supply (Max): 19V
Voltage - Output: -
Current - Output / Channel: -
Frequency: -
Dimming: -
Applications: Lighting
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫37,974

HER3L06G

Taiwan Semiconductor Corporation

75NS, 3A, 600V, HIGH EFFICIENT R

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Capacitance @ Vr, F: 54pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: -

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MTZJ5V1SC

Taiwan Semiconductor Corporation

DO-34, 500MW, 2%, SMALL SIGNAL Z

Voltage - Zener (Nom) (Vz): 5.1 V
Tolerance: ±2%
Power - Max: 500 mW
Impedance (Max) (Zzt): 80 Ohms
Current - Reverse Leakage @ Vr: 5 µA @ 1.5 V
Voltage - Forward (Vf) (Max) @ If: -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AG, DO-34, Axial
Supplier Device Package: DO-34

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BZY55B33-RBG

Taiwan Semiconductor Corporation

DIODE ZENER 33V 500MW 0805

Voltage - Zener (Nom) (Vz): 33 V
Tolerance: ±2%
Power - Max: 500 mW
Impedance (Max) (Zzt): 80 Ohms
Current - Reverse Leakage @ Vr: 100 nA @ 24 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 0805 (2012 Metric)
Supplier Device Package: 0805

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BZT52C56-G

Taiwan Semiconductor Corporation

SOD-123, 350MW, 5%, SMALL SIGNAL

Voltage - Zener (Nom) (Vz): 56 V
Tolerance: ±5%
Power - Max: 500 mW
Impedance (Max) (Zzt): 200 Ohms
Current - Reverse Leakage @ Vr: 45 nA @ 39.2 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123F

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PU1JFS

Taiwan Semiconductor Corporation

25NS, 1A, 600V, ULTRA FAST RECOV

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C

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在庫84,000

BZX79C75

Taiwan Semiconductor Corporation

DO-35, 500MW, 5%, SMALL SIGNAL Z

Voltage - Zener (Nom) (Vz): 75 V
Tolerance: ±5%
Power - Max: 500 mW
Impedance (Max) (Zzt): 255 Ohms
Current - Reverse Leakage @ Vr: 50 nA @ 52.5 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35

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TSM150P04LCS

Taiwan Semiconductor Corporation

-40, -22, SINGLE P-CHANNEL

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2783 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.2W (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 9A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP
Package / Case: 8-SOIC (0.154", 3.90mm Width)

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SRT19H

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 90V 1A TS-1

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 90 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: T-18, Axial
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C

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PU2BM

Taiwan Semiconductor Corporation

25NS, 2A, 100V, ULTRA FAST RECOV

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 28 ns
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Supplier Device Package: Micro SMA
Operating Temperature - Junction: -55°C ~ 175°C

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在庫36,000

SF2L6G

Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 2A DO204AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C

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在庫10,500

SR503

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 30V 5A DO201AD

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C

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S1MLWH

Taiwan Semiconductor Corporation

DIODE GEN PURP 1KV 1A SOD123W

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123W
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C

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在庫10,020

1N4760AH

Taiwan Semiconductor Corporation

DIODE ZENER 68V 1W DO204AL

Voltage - Zener (Nom) (Vz): 68 V
Tolerance: ±5%
Power - Max: 1 W
Impedance (Max) (Zzt): 150 Ohms
Current - Reverse Leakage @ Vr: 5 µA @ 51.7 V
Voltage - Forward (Vf) (Max) @ If: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)

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SR105H

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 50V 1A DO204AL

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C

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