ページ 60 - Taiwan Semiconductor Corporation 製品

部品番号	メーカ	説明	パッケージ	在庫
BZD27C200PHRFG	Taiwan Semiconductor Corporation	DIODE, ZENER, 200V, 1000MW, %, A Voltage - Zener (Nom) (Vz): 200V Tolerance: ±6% Power - Max: 1W Impedance (Max) (Zzt): 750 Ohms Current - Reverse Leakage @ Vr: 1µA @ 150V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	パッケージ: DO-219AB	在庫4,224
BZD27C18P RTG	Taiwan Semiconductor Corporation	DIODE, ZENER, 18V, 1000MW, %, SU Voltage - Zener (Nom) (Vz): 17.95V Tolerance: ±6.4% Power - Max: 1W Impedance (Max) (Zzt): 15 Ohms Current - Reverse Leakage @ Vr: 1µA @ 13V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	パッケージ: DO-219AB	在庫4,336
BZD27C100PHRQG	Taiwan Semiconductor Corporation	DIODE, ZENER, 100V, 1000MW, %, A Voltage - Zener (Nom) (Vz): 100V Tolerance: ±6% Power - Max: 1W Impedance (Max) (Zzt): 200 Ohms Current - Reverse Leakage @ Vr: 1µA @ 75V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	パッケージ: DO-219AB	在庫7,152
BZD17C47P R3G	Taiwan Semiconductor Corporation	DIODE, ZENER, 47V, 800MW, %, SUB Voltage - Zener (Nom) (Vz): 47V Tolerance: ±6.38% Power - Max: 800mW Impedance (Max) (Zzt): 45 Ohms Current - Reverse Leakage @ Vr: 1µA @ 36V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	パッケージ: DO-219AB	在庫2,100
BZT52B15S RRG	Taiwan Semiconductor Corporation	DIODE, ZENER, 15V, 200MW, 2%, SO Voltage - Zener (Nom) (Vz): 15V Tolerance: ±2% Power - Max: 200mW Impedance (Max) (Zzt): 30 Ohms Current - Reverse Leakage @ Vr: 45nA @ 10.5V Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: SOD-323F	パッケージ: SC-90, SOD-323F	在庫6,336
MMSZ5229B RHG	Taiwan Semiconductor Corporation	DIODE, ZENER, 4.3V, 500MW, 5%, S Voltage - Zener (Nom) (Vz): 4.3V Tolerance: ±5% Power - Max: 500mW Impedance (Max) (Zzt): 22 Ohms Current - Reverse Leakage @ Vr: 5µA @ 1V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123F	パッケージ: SOD-123F	在庫3,536
BZV55C24 L0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 24V, 500MW, 5%, MM Voltage - Zener (Nom) (Vz): 24V Tolerance: ±5% Power - Max: 500mW Impedance (Max) (Zzt): 80 Ohms Current - Reverse Leakage @ Vr: 100nA @ 18V Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Supplier Device Package: Mini MELF	パッケージ: DO-213AC, MINI-MELF, SOD-80	在庫2,448
GBPC1501 T0G	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 15A, Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 100V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 7.5A Current - Reverse Leakage @ Vr: 5µA @ 100V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: QC Terminal Package / Case: 4-Square, GBPC Supplier Device Package: GBPC	パッケージ: 4-Square, GBPC	在庫6,080
TS8P04G D2G	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 8A, Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 400V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A Current - Reverse Leakage @ Vr: 10µA @ 400V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, TS-6P Supplier Device Package: TS-6P	パッケージ: 4-SIP, TS-6P	在庫3,680
DBL154GHC1G	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 1.5A Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 400V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A Current - Reverse Leakage @ Vr: 2µA @ 400V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-DIP (0.300", 7.62mm) Supplier Device Package: DBL	パッケージ: 4-DIP (0.300", 7.62mm)	在庫5,216
TPC816S1D RAG	Taiwan Semiconductor Corporation	OPTOISO 5KV TRANS 4SOP Number of Channels: 1 Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 300% @ 5mA Current Transfer Ratio (Max): 600% @ 5mA Turn On / Turn Off Time (Typ): - Rise / Fall Time (Typ): 4µs, 3µs Input Type: DC Output Type: Transistor Voltage - Output (Max): 70V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.2V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 200mV Operating Temperature: -30°C ~ 100°C Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫3,942
SR1690PTH	Taiwan Semiconductor Corporation	DIODE ARR SCHOTT 90V 16A TO247AD Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90 V Current - Average Rectified (Io) (per Diode): 16A (DC) Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 90 V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (TO-3P)	パッケージ: -	Request a Quote
BZX584B20-RSG	Taiwan Semiconductor Corporation	DIODE ZENER 20V 150MW SOD523F Voltage - Zener (Nom) (Vz): 20 V Tolerance: ±2% Power - Max: 150 mW Impedance (Max) (Zzt): 55 Ohms Current - Reverse Leakage @ Vr: 100 nA @ 14 V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: SOD-523F	パッケージ: -	在庫143,916
UGF2008G	Taiwan Semiconductor Corporation	DIODE ARRAY GP 600V 20A ITO220AB Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io) (per Diode): 20A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Supplier Device Package: ITO-220AB	パッケージ: -	在庫3,000
PU2DLW	Taiwan Semiconductor Corporation	25NS, 2A, 200V, ULTRA FAST RECOV Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 2 µA @ 200 V Capacitance @ Vr, F: 33pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123W Operating Temperature - Junction: -55°C ~ 175°C	パッケージ: -	在庫60,000
BC858A	Taiwan Semiconductor Corporation	SOT-23, -30V, -0.1A, PNP BIPOLAR Transistor Type: PNP Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V Power - Max: 200 mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	パッケージ: -	Request a Quote
MBR30L60CT	Taiwan Semiconductor Corporation	DIODE ARR SCHOTT 60V 30A TO220AB Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io) (per Diode): 30A Voltage - Forward (Vf) (Max) @ If: 600 mV @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 480 µA @ 60 V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	パッケージ: -	Request a Quote
TSM4800N15CX6	Taiwan Semiconductor Corporation	150V, 1.4A, SINGLE N-CHANNEL PO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 332 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Tc) Rds On (Max) @ Id, Vgs: 480mOhm @ 1.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-26 Package / Case: SOT-23-6	パッケージ: -	Request a Quote
1PGSMC5365-V7G	Taiwan Semiconductor Corporation	DIODE ZENER 5W DO214AB Voltage - Zener (Nom) (Vz): 36 V Tolerance: ±5% Power - Max: 5 W Impedance (Max) (Zzt): 11 Ohms Current - Reverse Leakage @ Vr: 500 nA @ 27.4 V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC)	パッケージ: -	Request a Quote
PU6JB	Taiwan Semiconductor Corporation	25NS, 6A, 600V, ULTRA FAST RECOV Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 2 µA @ 600 V Capacitance @ Vr, F: 48pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: -	在庫36,000
SK24A	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 2A DO214AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: -	在庫22,500
TSF20H100C-S	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 10A ITO220AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 790 mV @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Supplier Device Package: ITO-220AB Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: -	Request a Quote
SS320-V7G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 200V 3A DO214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: -	Request a Quote
UGF10J	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 10A ITO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 2 V @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: -	在庫3,000
6A20G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 6A R-6 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: R-6, Axial Supplier Device Package: R-6 Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: -	Request a Quote
BZT52B51	Taiwan Semiconductor Corporation	SOD-123F, 500MW, 2%, SMALL SIGNA Voltage - Zener (Nom) (Vz): 51 V Tolerance: ±2% Power - Max: 500 mW Impedance (Max) (Zzt): 180 Ohms Current - Reverse Leakage @ Vr: 45 nA @ 35.7 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123F	パッケージ: -	Request a Quote
1SMB5947	Taiwan Semiconductor Corporation	DIODE ZENER 82V 3W DO214AA Voltage - Zener (Nom) (Vz): 82 V Tolerance: ±5% Power - Max: 3 W Impedance (Max) (Zzt): 160 Ohms Current - Reverse Leakage @ Vr: 1 µA @ 62.2 V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB)	パッケージ: -	Request a Quote
MBRS10150CTH	Taiwan Semiconductor Corporation	DIODE ARR SCHOT 150V 10A TO263AB Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io) (per Diode): 10A Voltage - Forward (Vf) (Max) @ If: 980 mV @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 150 V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK)	パッケージ: -	Request a Quote