ページ 75 - Taiwan Semiconductor Corporation 製品 | Heisener Electronics
連絡先
SalesDept@heisener.com +86-755-83210559-836
Language Translation

* Please refer to the English Version as our Official Version.

Taiwan Semiconductor Corporation 製品

レコード 4,299
ページ  75/154
画像
部品番号
メーカ
説明
パッケージ
在庫
数量
2M43ZHA0G
Taiwan Semiconductor Corporation

DIODE, ZENER, 43V, 2000MW, %, AE

  • Voltage - Zener (Nom) (Vz): 43V
  • Tolerance: ±5%
  • Power - Max: 2W
  • Impedance (Max) (Zzt): 35 Ohms
  • Current - Reverse Leakage @ Vr: 500nA @ 32.7V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-204AC (DO-15)
パッケージ: DO-204AC, DO-15, Axial
在庫2,272
BZD27C100PHRUG
Taiwan Semiconductor Corporation

DIODE, ZENER, 100V, 1000MW, %, A

  • Voltage - Zener (Nom) (Vz): 100V
  • Tolerance: ±6%
  • Power - Max: 1W
  • Impedance (Max) (Zzt): 200 Ohms
  • Current - Reverse Leakage @ Vr: 1µA @ 75V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
パッケージ: DO-219AB
在庫6,016
2M13Z R0G
Taiwan Semiconductor Corporation

DIODE, ZENER, 13V, 2000MW, %, DO

  • Voltage - Zener (Nom) (Vz): 13V
  • Tolerance: ±5%
  • Power - Max: 2W
  • Impedance (Max) (Zzt): 5 Ohms
  • Current - Reverse Leakage @ Vr: 500nA @ 9.9V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-204AC (DO-15)
パッケージ: DO-204AC, DO-15, Axial
在庫2,400
1SMA5929HR3G
Taiwan Semiconductor Corporation

DIODE, ZENER, 15V, 1500MW, 5%, A

  • Voltage - Zener (Nom) (Vz): 15V
  • Tolerance: ±5%
  • Power - Max: 1.5W
  • Impedance (Max) (Zzt): 9 Ohms
  • Current - Reverse Leakage @ Vr: 500nA @ 11.4V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
パッケージ: DO-214AC, SMA
在庫2,896
1SMA5931HM2G
Taiwan Semiconductor Corporation

DIODE, ZENER, 18V, 1500MW, 5%, A

  • Voltage - Zener (Nom) (Vz): 18V
  • Tolerance: ±5%
  • Power - Max: 1.5W
  • Impedance (Max) (Zzt): 12 Ohms
  • Current - Reverse Leakage @ Vr: 500nA @ 13.7V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
パッケージ: DO-214AC, SMA
在庫3,936
1SMA120Z M2G
Taiwan Semiconductor Corporation

DIODE, ZENER, 120V, 1000MW, %, D

  • Voltage - Zener (Nom) (Vz): 120V
  • Tolerance: ±5%
  • Power - Max: 1.25W
  • Impedance (Max) (Zzt): 550 Ohms
  • Current - Reverse Leakage @ Vr: 1µA @ 91.2V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
パッケージ: DO-214AC, SMA
在庫5,936
TSZL52C5V6 RWG
Taiwan Semiconductor Corporation

DIODE, ZENER, 5.6V, 200MW, 5%, 1

  • Voltage - Zener (Nom) (Vz): 5.6V
  • Tolerance: ±5%
  • Power - Max: 200mW
  • Impedance (Max) (Zzt): 40 Ohms
  • Current - Reverse Leakage @ Vr: 100nA @ 1V
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 1005 (2512 Metric)
  • Supplier Device Package: 1005
パッケージ: 1005 (2512 Metric)
在庫2,048
TSZU52C16 RGG
Taiwan Semiconductor Corporation

DIODE, ZENER, 16V, 150MW, 5%, 06

  • Voltage - Zener (Nom) (Vz): 16V
  • Tolerance: ±5%
  • Power - Max: 150mW
  • Impedance (Max) (Zzt): 40 Ohms
  • Current - Reverse Leakage @ Vr: 100nA @ 12V
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 0201 (0603 Metric)
  • Supplier Device Package: 0603
パッケージ: 0201 (0603 Metric)
在庫3,232
DBLS203GHC1G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 2A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2A
  • Current - Reverse Leakage @ Vr: 2µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: DBLS
パッケージ: 4-SMD, Gull Wing
在庫6,816
TS3810CXG RFG
Taiwan Semiconductor Corporation

RESET IC, 2.25V 2% VTH, ACTIVE-H

  • Type: Simple Reset/Power-On Reset
  • Number of Voltages Monitored: 1
  • Output: Push-Pull, Totem Pole
  • Reset: Active High
  • Reset Timeout: 140 ms Minimum
  • Voltage - Threshold: 2.25V
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
パッケージ: TO-236-3, SC-59, SOT-23-3
在庫7,120
S1DLS-RQG
Taiwan Semiconductor Corporation

DIODE GP 200V 1.2A SOD123HE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 1.2A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123H
  • Supplier Device Package: SOD-123HE
  • Operating Temperature - Junction: -55°C ~ 175°C
パッケージ: -
Request a Quote
PU3BFSH
Taiwan Semiconductor Corporation

DIODE GEN PURP 100V 3A SOD128

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 930 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25 ns
  • Current - Reverse Leakage @ Vr: 2 µA @ 100 V
  • Capacitance @ Vr, F: 47pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: SOD-128
  • Operating Temperature - Junction: -55°C ~ 175°C
パッケージ: -
在庫39,861
TSF40L60C
Taiwan Semiconductor Corporation

DIODE ARR SCHOT 60V 20A ITO220AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io) (per Diode): 20A
  • Voltage - Forward (Vf) (Max) @ If: 630 mV @ 20 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 60 V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
  • Supplier Device Package: ITO-220AB
パッケージ: -
Request a Quote
BZD27C56P
Taiwan Semiconductor Corporation

DIODE ZENER 56V 1W SUB SMA

  • Voltage - Zener (Nom) (Vz): 56 V
  • Tolerance: ±7.14%
  • Power - Max: 1 W
  • Impedance (Max) (Zzt): 60 Ohms
  • Current - Reverse Leakage @ Vr: 1 µA @ 43 V
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
パッケージ: -
Request a Quote
6A20GH
Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 6A R-6

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 200 V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: R-6, Axial
  • Supplier Device Package: R-6
  • Operating Temperature - Junction: -55°C ~ 150°C
パッケージ: -
Request a Quote
SF13G
Taiwan Semiconductor Corporation

DIODE GEN PURP 150V 1A DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 150 V
  • Capacitance @ Vr, F: 20pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -55°C ~ 150°C
パッケージ: -
Request a Quote
SF62G
Taiwan Semiconductor Corporation

DIODE GEN PURP 100V 6A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 975 mV @ 6 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 100 V
  • Capacitance @ Vr, F: 100pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 150°C
パッケージ: -
Request a Quote
TSM80N950CI
Taiwan Semiconductor Corporation

800V, 6A, SINGLE N-CHANNEL POWER

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19.6 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 691 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: ITO-220
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
パッケージ: -
Request a Quote
RS1DFSH
Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 1A SOD128

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Capacitance @ Vr, F: 7pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: SOD-128
  • Operating Temperature - Junction: -55°C ~ 150°C
パッケージ: -
在庫84,000
UGA15120
Taiwan Semiconductor Corporation

DIODE GEN PURP 1.2KV 15A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 2.9 V @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 65 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 175°C
パッケージ: -
Request a Quote
BZT55C6V2
Taiwan Semiconductor Corporation

QMMELF, 500MW, 5%, SMALL SIGNAL

  • Voltage - Zener (Nom) (Vz): 6.2 V
  • Tolerance: ±5%
  • Power - Max: 500 mW
  • Impedance (Max) (Zzt): 10 Ohms
  • Current - Reverse Leakage @ Vr: 100 nA @ 2 V
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
  • Operating Temperature: -65°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOD-80 Variant
  • Supplier Device Package: QMMELF
パッケージ: -
Request a Quote
1N4937GH
Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 1A DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 200 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -55°C ~ 150°C
パッケージ: -
在庫30,000
BZT55C13
Taiwan Semiconductor Corporation

QMMELF, 500MW, 5%, SMALL SIGNAL

  • Voltage - Zener (Nom) (Vz): 13 V
  • Tolerance: ±5%
  • Power - Max: 500 mW
  • Impedance (Max) (Zzt): 26 Ohms
  • Current - Reverse Leakage @ Vr: 100 nA @ 10 V
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
  • Operating Temperature: -65°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOD-80 Variant
  • Supplier Device Package: QMMELF
パッケージ: -
Request a Quote
HER203G
Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 2A DO204AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Capacitance @ Vr, F: 35pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-204AC (DO-15)
  • Operating Temperature - Junction: -55°C ~ 150°C
パッケージ: -
Request a Quote
LL4005G-L0
Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 1A MELF

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AB, MELF
  • Supplier Device Package: MELF
  • Operating Temperature - Junction: -65°C ~ 150°C
パッケージ: -
Request a Quote
BZY55B13-RBG
Taiwan Semiconductor Corporation

DIODE ZENER 13V 500MW 0805

  • Voltage - Zener (Nom) (Vz): 13 V
  • Tolerance: ±2%
  • Power - Max: 500 mW
  • Impedance (Max) (Zzt): 26 Ohms
  • Current - Reverse Leakage @ Vr: 100 nA @ 10 V
  • Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 0805 (2012 Metric)
  • Supplier Device Package: 0805
パッケージ: -
Request a Quote
TQL851CSV50-RLG
Taiwan Semiconductor Corporation

500MA, LOW-IQ 30A LOW-DROPOUT LI

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 50V
  • Voltage - Output (Min/Fixed): 5V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.425V @ 250mA
  • Current - Output: 500mA
  • Current - Quiescent (Iq): 60 µA
  • Current - Supply (Max): -
  • PSRR: 59dB (100Hz)
  • Control Features: Enable
  • Protection Features: Over Temperature
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOP-EP
パッケージ: -
在庫7,005
BAT54T-G
Taiwan Semiconductor Corporation

DIODE ARR SCHOT 30V 200MA SOT363

  • Diode Configuration: 3 Independent
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io) (per Diode): 200mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 5 ns
  • Current - Reverse Leakage @ Vr: 2 µA @ 25 V
  • Operating Temperature - Junction: -65°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
パッケージ: -
Request a Quote