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部品番号 |
メーカ |
説明 |
パッケージ |
在庫 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Toshiba Semiconductor and Storage |
PB-F POWER MOSFET TRANSISTOR DPA
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パッケージ: - |
在庫6,000 |
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MOSFET (Metal Oxide) | 600 V | 4.5A (Ta) | 10V | 4.5V @ 230µA | 11.5 nC @ 10 V | 370 pF @ 300 V | ±30V | - | 60W (Tc) | 990mOhm @ 2.3A, 10V | 150°C | Surface Mount | DPAK | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 65A DPAK
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パッケージ: - |
在庫8,544 |
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MOSFET (Metal Oxide) | 40 V | 65A (Ta) | 4.5V, 10V | 2.5V @ 300µA | 39 nC @ 10 V | 2550 pF @ 10 V | ±20V | - | 107W (Tc) | 4.3mOhm @ 32.5A, 10V | 175°C | Surface Mount | DPAK+ | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 6A SOT23F
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パッケージ: - |
在庫42,024 |
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MOSFET (Metal Oxide) | 20 V | 6A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 12.8 nC @ 4.5 V | 840 pF @ 10 V | +6V, -8V | - | 1W (Ta) | 29.8mOhm @ 3A, 4.5V | 150°C | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Toshiba Semiconductor and Storage |
AECQ MOSFET NCH 60V 6A SOT323F
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パッケージ: - |
在庫33,078 |
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MOSFET (Metal Oxide) | 60 V | 6A (Ta) | 4V, 10V | 2.5V @ 100µA | 9.3 nC @ 10 V | 550 pF @ 10 V | ±20V | - | 1W (Ta) | 36mOhm @ 4A, 10V | 175°C | Surface Mount | UFM | 3-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
G3 650V SIC-MOSFET TO-247-4L 83
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パッケージ: - |
在庫360 |
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SiC (Silicon Carbide Junction Transistor) | 650 V | 30A (Tc) | 18V | 5V @ 600µA | 28 nC @ 18 V | 873 pF @ 400 V | +25V, -10V | - | 111W (Tc) | 118mOhm @ 15A, 18V | 175°C | Through Hole | TO-247-4L(X) | TO-247-4 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 11A DPAK
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パッケージ: - |
在庫5,382 |
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MOSFET (Metal Oxide) | 100 V | 11A (Ta) | 4.5V, 10V | 2.5V @ 100µA | 15 nC @ 10 V | 850 pF @ 10 V | ±20V | - | 65W (Tc) | 28mOhm @ 5.5A, 10V | 175°C | Surface Mount | DPAK+ | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 11.5A TO3P
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パッケージ: - |
Request a Quote |
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MOSFET (Metal Oxide) | 600 V | 11.5A (Ta) | 10V | 3.7V @ 600µA | 25 nC @ 10 V | 890 pF @ 300 V | ±30V | - | 110W (Tc) | 300mOhm @ 5.8A, 10V | 150°C | Through Hole | TO-3P(N) | TO-3P-3, SC-65-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 40A 8TSON
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パッケージ: - |
在庫87,855 |
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MOSFET (Metal Oxide) | 60 V | 40A (Ta) | 4.5V, 10V | 2.5V @ 300µA | 35 nC @ 10 V | 2000 pF @ 10 V | ±20V | - | 840mW (Ta), 100W (Tc) | 6.7mOhm @ 20A, 10V | 175°C | Surface Mount | 8-TSON Advance-WF (3.1x3.1) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
PB-F POWER MOSFET TRANSISTOR TO-
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パッケージ: - |
在庫150 |
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MOSFET (Metal Oxide) | 800 V | 9.5A (Ta) | 10V | 4V @ 450µA | 19 nC @ 10 V | 1150 pF @ 300 V | ±20V | - | 130W (Tc) | 550mOhm @ 4.8A, 10V | 150°C | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 100MA S-MINI
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パッケージ: - |
在庫97,344 |
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MOSFET (Metal Oxide) | 30 V | 100mA (Ta) | 2.5V, 4V | 1.5V @ 100µA | - | 7.8 pF @ 3 V | ±20V | - | 200mW (Ta) | 4Ohm @ 10mA, 4V | 150°C | Surface Mount | S-Mini | TO-236-3, SC-59, SOT-23-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 2A PW-MOLD
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パッケージ: - |
Request a Quote |
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MOSFET (Metal Oxide) | 600 V | 2A (Ta) | 10V | 4.4V @ 1mA | 7 nC @ 10 V | 280 pF @ 25 V | ±30V | - | 60W (Tc) | 4.3Ohm @ 1A, 10V | 150°C | Surface Mount | PW-MOLD | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 100A 8SOP
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パッケージ: - |
在庫35,247 |
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MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 4.5V, 10V | 2.4V @ 500µA | 78 nC @ 10 V | 6230 pF @ 20 V | ±20V | - | 830mW (Ta), 116W (Tc) | 2.1mOhm @ 50A, 10V | 175°C | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 6A 6UDFNB
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パッケージ: - |
在庫20,412 |
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MOSFET (Metal Oxide) | 30 V | 6A (Ta) | 1.8V, 4.5V | 1V @ 1mA | 3.2 nC @ 4.5 V | 310 pF @ 15 V | +12V, -8V | - | 1.25W (Ta) | 39.1mOhm @ 2A, 4.5V | 150°C | Surface Mount | 6-UDFNB (2x2) | 6-WDFN Exposed Pad |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 2A ES6
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パッケージ: - |
Request a Quote |
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MOSFET (Metal Oxide) | 20 V | 2A (Ta) | 1.5V, 4V | 1V @ 1mA | 3.4 nC @ 10 V | 195 pF @ 10 V | ±10V | - | 500mW (Ta) | 126mOhm @ 1A, 4V | 150°C | Surface Mount | ES6 | SOT-563, SOT-666 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 60A TO220SM
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パッケージ: - |
在庫5,250 |
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MOSFET (Metal Oxide) | 100 V | 60A (Ta) | 6V, 10V | 3.5V @ 500µA | 60 nC @ 10 V | 4320 pF @ 10 V | ±20V | - | 205W (Tc) | 6.11mOhm @ 30A, 10V | 175°C | Surface Mount | TO-220SM(W) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Toshiba Semiconductor and Storage |
COMMON-DRAIN NCH MOSFET, 12V, 13
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パッケージ: - |
在庫30,000 |
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MOSFET (Metal Oxide) | 12 V | 13.5A (Ta) | 2.5V, 4.5V | 1.4V @ 1.11mA | 25 nC @ 4 V | - | ±8V | - | 800mW (Ta) | 2.75mOhm @ 6A, 4.5V | 150°C | Surface Mount | TCSPAC-153001 | 10-SMD, No Lead |
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Toshiba Semiconductor and Storage |
G3 650V SIC-MOSFET TO-247 48MOH
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パッケージ: - |
在庫108 |
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SiCFET (Silicon Carbide) | 650 V | 40A (Tc) | 18V | 5V @ 1.6mA | 41 nC @ 18 V | 1362 pF @ 400 V | +25V, -10V | - | 132W (Tc) | 65mOhm @ 20A, 18V | 175°C | Through Hole | TO-247 | TO-247-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 3.5A 6UDFNB
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パッケージ: - |
在庫114,423 |
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MOSFET (Metal Oxide) | 100 V | 3.5A (Ta) | 4.5V, 10V | 2.5V @ 100µA | 3.2 nC @ 4.5 V | 430 pF @ 15 V | ±20V | - | 1.25W (Ta) | 69mOhm @ 2A, 10V | 150°C | Surface Mount | 6-UDFNB (2x2) | 6-WDFN Exposed Pad |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR
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パッケージ: - |
在庫14,685 |
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MOSFET (Metal Oxide) | 650 V | 27.6A (Ta) | 10V | 4.5V @ 1.6mA | 90 nC @ 10 V | 3000 pF @ 300 V | ±30V | - | 240W (Tc) | 140mOhm @ 13.8A, 10V | 150°C | Surface Mount | 4-DFN-EP (8x8) | 4-VSFN Exposed Pad |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 70A 8TSON
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パッケージ: - |
在庫112,338 |
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MOSFET (Metal Oxide) | 30 V | 70A (Tc) | 4.5V, 10V | 2.1V @ 200µA | 26 nC @ 10 V | 2300 pF @ 15 V | ±20V | - | 630mW (Ta), 75W (Tc) | 2.9mOhm @ 35A, 10V | 175°C | Surface Mount | 8-TSON Advance (3.1x3.1) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 11A DPAK
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パッケージ: - |
在庫11,667 |
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MOSFET (Metal Oxide) | 100 V | 11A (Ta) | 4.5V, 10V | 2.5V @ 100µA | 15 nC @ 10 V | 850 pF @ 10 V | ±20V | - | 65W (Tc) | 28mOhm @ 5.5A, 10V | 175°C | Surface Mount | DPAK+ | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 160A TO220SM
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パッケージ: - |
在庫26,400 |
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MOSFET (Metal Oxide) | 100 V | 160A (Ta) | 6V, 10V | 3.5V @ 1mA | 122 nC @ 10 V | 10100 pF @ 10 V | ±20V | - | 375W (Tc) | 2.4mOhm @ 80A, 10V | 175°C | Surface Mount | TO-220SM(W) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR
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パッケージ: - |
在庫180 |
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MOSFET (Metal Oxide) | 60 V | 56A (Tc) | 4.5V, 10V | 2.5V @ 300µA | 36 nC @ 10 V | 2380 pF @ 30 V | ±20V | - | 36W (Tc) | 5.3mOhm @ 28A, 10V | 175°C | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CHANNEL 60V 58A DPAK
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パッケージ: - |
在庫10,155 |
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MOSFET (Metal Oxide) | 60 V | 58A (Tc) | 4.5V, 10V | 2.5V @ 500µA | 48.2 nC @ 10 V | 3280 pF @ 30 V | ±20V | - | 87W (Tc) | 4.4mOhm @ 29A, 10V | 175°C | Surface Mount | DPAK | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
AUTO AEC-Q SS MOS N-CH LOGIC-LEV
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パッケージ: - |
在庫19,638 |
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MOSFET (Metal Oxide) | 60 V | 6A (Ta) | 4V, 10V | 2.5V @ 100µA | 9.3 nC @ 10 V | 550 pF @ 10 V | ±20V | - | 1.5W (Ta) | 36mOhm @ 5A, 10V | 175°C | Surface Mount | 6-TSOP-F | 6-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 100MA USM
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パッケージ: - |
在庫66,519 |
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MOSFET (Metal Oxide) | 30 V | 100mA (Ta) | 2.5V, 4V | 1.5V @ 100µA | - | 15.1 pF @ 3 V | ±20V | - | 150mW (Ta) | 3.2Ohm @ 10mA, 4V | 150°C | Surface Mount | USM | SC-70, SOT-323 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 2A UF6
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パッケージ: - |
在庫18,570 |
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MOSFET (Metal Oxide) | 30 V | 2A (Ta) | 4V, 10V | 2.6V @ 1mA | 5.3 nC @ 10 V | 280 pF @ 15 V | ±20V | - | 500mW (Ta) | 117mOhm @ 1A, 10V | 150°C | Surface Mount | UF6 | 6-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
G3 1200V SIC-MOSFET TO-247-4L 1
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パッケージ: - |
在庫360 |
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SiC (Silicon Carbide Junction Transistor) | 1200 V | 100A (Tc) | 18V | 5V @ 11.7mA | 158 nC @ 18 V | 6000 pF @ 800 V | +25V, -10V | - | 431W (Tc) | 21mOhm @ 50A, 18V | 175°C | Through Hole | TO-247-4L(X) | TO-247-4 |