ページ 6 - Toshiba Semiconductor and Storage 製品 - トランジスタ - FET、MOSFET - シングル | Heisener Electronics
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Toshiba Semiconductor and Storage 製品 - トランジスタ - FET、MOSFET - シングル

レコード 1,075
ページ  6/36
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Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TK20E60W5-S1VX
Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 165W (Tc)
  • Rds On (Max) @ Id, Vgs: 175mOhm @ 10A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
パッケージ: -
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MOSFET (Metal Oxide)
600 V
20A (Ta)
10V
4.5V @ 1mA
55 nC @ 10 V
1800 pF @ 300 V
±30V
-
165W (Tc)
175mOhm @ 10A, 10V
150°C
Through Hole
TO-220
TO-220-3
SSM3J15FS-LF
Toshiba Semiconductor and Storage

MOSFET P-CH 30V 100MA SSM

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
  • Vgs(th) (Max) @ Id: 1.7V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 100mW (Ta)
  • Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: SSM
  • Package / Case: SC-75, SOT-416
パッケージ: -
在庫9,285
MOSFET (Metal Oxide)
30 V
100mA (Ta)
2.5V, 4V
1.7V @ 100µA
-
9.1 pF @ 3 V
±20V
-
100mW (Ta)
12Ohm @ 10mA, 4V
150°C
Surface Mount
SSM
SC-75, SOT-416
TK055U60Z1-RQ
Toshiba Semiconductor and Storage

600V DTMOS VI TOLL 55MOHM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1.69mA
  • Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 270W (Tc)
  • Rds On (Max) @ Id, Vgs: 55mOhm @ 15A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: TOLL
  • Package / Case: 8-PowerSFN
パッケージ: -
在庫10,701
MOSFET (Metal Oxide)
600 V
40A (Ta)
10V
4V @ 1.69mA
65 nC @ 10 V
3680 pF @ 300 V
±30V
-
270W (Tc)
55mOhm @ 15A, 10V
150°C
Surface Mount
TOLL
8-PowerSFN
TK12P50W-RQ
Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR DPA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.7V @ 600µA
  • Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 340mOhm @ 5.8A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
パッケージ: -
在庫5,850
MOSFET (Metal Oxide)
500 V
11.5A (Ta)
10V
3.7V @ 600µA
25 nC @ 10 V
890 pF @ 300 V
±30V
-
100W (Tc)
340mOhm @ 5.8A, 10V
150°C
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
TPH5R60APL-L1Q
Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR N-C

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 960mW (Ta), 132W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.6mOhm @ 30A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5)
  • Package / Case: 8-PowerVDFN
パッケージ: -
在庫9,840
MOSFET (Metal Oxide)
100 V
60A (Tc)
4.5V, 10V
2.5V @ 500µA
52 nC @ 10 V
4300 pF @ 50 V
±20V
-
960mW (Ta), 132W (Tc)
5.6mOhm @ 30A, 10V
175°C
Surface Mount
8-SOP Advance (5x5)
8-PowerVDFN
TW048Z65C-S1F
Toshiba Semiconductor and Storage

G3 650V SIC-MOSFET TO-247-4L 48

  • FET Type: N-Channel
  • Technology: SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 5V @ 1.6mA
  • Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1362 pF @ 400 V
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 132W (Tc)
  • Rds On (Max) @ Id, Vgs: 69mOhm @ 20A, 18V
  • Operating Temperature: 175°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4L(X)
  • Package / Case: TO-247-4
パッケージ: -
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SiC (Silicon Carbide Junction Transistor)
650 V
40A (Tc)
18V
5V @ 1.6mA
41 nC @ 18 V
1362 pF @ 400 V
+25V, -10V
-
132W (Tc)
69mOhm @ 20A, 18V
175°C
Through Hole
TO-247-4L(X)
TO-247-4
SSM3J340R-LF
Toshiba Semiconductor and Storage

MOSFET P-CH 30V 4A SOT23F

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 492 pF @ 10 V
  • Vgs (Max): +20V, -25V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23F
  • Package / Case: SOT-23-3 Flat Leads
パッケージ: -
在庫69,066
MOSFET (Metal Oxide)
30 V
4A (Ta)
4V, 10V
2.2V @ 250µA
6.2 nC @ 4.5 V
492 pF @ 10 V
+20V, -25V
-
1W (Ta)
45mOhm @ 4A, 10V
150°C
Surface Mount
SOT-23F
SOT-23-3 Flat Leads
SSM6K818R-LF
Toshiba Semiconductor and Storage

N-CH MOSFET 30V, +/-20V, 15A ,0.

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 12mOhm @ 4A, 4.5V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP-F
  • Package / Case: 6-SMD, Flat Leads
パッケージ: -
在庫17,220
MOSFET (Metal Oxide)
30 V
15A (Ta)
4.5V, 10V
2.1V @ 100µA
7.5 nC @ 4.5 V
1130 pF @ 15 V
±20V
-
1.5W (Ta)
12mOhm @ 4A, 4.5V
150°C
Surface Mount
6-TSOP-F
6-SMD, Flat Leads
XPJR6604PB-LXHQ
Toshiba Semiconductor and Storage

40V; UMOS9; 0.66MOHM; S-TOGL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 11380 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 375W (Tc)
  • Rds On (Max) @ Id, Vgs: 0.66mOhm @ 100A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: S-TOGL™
  • Package / Case: 5-PowerSFN
パッケージ: -
在庫8,571
MOSFET (Metal Oxide)
40 V
200A (Ta)
6V, 10V
3V @ 1mA
128 nC @ 10 V
11380 pF @ 10 V
±20V
-
375W (Tc)
0.66mOhm @ 100A, 10V
175°C
Surface Mount
S-TOGL™
5-PowerSFN
TPH2R306NH1-LQ
Toshiba Semiconductor and Storage

UMOS9 SOP-ADV(N) PD=170W F=1MHZ

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 136A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta), 170W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5.75)
  • Package / Case: 8-PowerTDFN
パッケージ: -
在庫46,617
MOSFET (Metal Oxide)
60 V
136A (Tc)
6.5V, 10V
4V @ 1mA
72 nC @ 10 V
6100 pF @ 30 V
±20V
-
800mW (Ta), 170W (Tc)
2.3mOhm @ 50A, 10V
150°C
Surface Mount
8-SOP Advance (5x5.75)
8-PowerTDFN
SSM3J375F-LF
Toshiba Semiconductor and Storage

MOSFET P-CH 20V 2A S-MINI

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
  • Vgs (Max): +6V, -8V
  • FET Feature: -
  • Power Dissipation (Max): 600mW (Ta)
  • Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: S-Mini
  • Package / Case: TO-236-3, SC-59, SOT-23-3
パッケージ: -
在庫68,580
MOSFET (Metal Oxide)
20 V
2A (Ta)
1.5V, 4.5V
1V @ 1mA
4.6 nC @ 4.5 V
270 pF @ 10 V
+6V, -8V
-
600mW (Ta)
150mOhm @ 1A, 4.5V
150°C
Surface Mount
S-Mini
TO-236-3, SC-59, SOT-23-3
SSM3J143TU-LF
Toshiba Semiconductor and Storage

MOSFET P-CH 20V 5.5A UFM

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
  • Vgs (Max): +6V, -8V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: UFM
  • Package / Case: 3-SMD, Flat Lead
パッケージ: -
在庫15,090
MOSFET (Metal Oxide)
20 V
5.5A (Ta)
1.5V, 4.5V
1V @ 1mA
12.8 nC @ 4.5 V
840 pF @ 10 V
+6V, -8V
-
500mW (Ta)
29.8mOhm @ 3A, 4.5V
150°C
Surface Mount
UFM
3-SMD, Flat Lead
TK8P65W-RQ
Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR DPA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 300µA
  • Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 80W (Tc)
  • Rds On (Max) @ Id, Vgs: 670mOhm @ 3.9A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
パッケージ: -
在庫5,952
MOSFET (Metal Oxide)
650 V
7.8A (Ta)
10V
3.5V @ 300µA
16 nC @ 10 V
570 pF @ 300 V
±30V
-
80W (Tc)
670mOhm @ 3.9A, 10V
150°C
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
TK5R1P08QM-RQ
Toshiba Semiconductor and Storage

UMOS10 DPAK 80V 5.1MOHM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 700µA
  • Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 104W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.1mOhm @ 42A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
パッケージ: -
在庫46,704
MOSFET (Metal Oxide)
80 V
84A (Tc)
6V, 10V
3.5V @ 700µA
56 nC @ 10 V
3980 pF @ 40 V
±20V
-
104W (Tc)
5.1mOhm @ 42A, 10V
175°C
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
TK5A90E-S4X
Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR TO-

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900 V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 450µA
  • Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.1Ohm @ 2.3A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
パッケージ: -
在庫141
MOSFET (Metal Oxide)
900 V
4.5A (Ta)
10V
4V @ 450µA
20 nC @ 10 V
950 pF @ 25 V
±30V
-
40W (Tc)
3.1Ohm @ 2.3A, 10V
150°C
Through Hole
TO-220SIS
TO-220-3 Full Pack
TK13P25D-RQ
Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR DPA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250 V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 96W (Tc)
  • Rds On (Max) @ Id, Vgs: 250mOhm @ 6.5A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
パッケージ: -
在庫6,744
MOSFET (Metal Oxide)
250 V
13A (Ta)
10V
3.5V @ 1mA
25 nC @ 10 V
1100 pF @ 100 V
±20V
-
96W (Tc)
250mOhm @ 6.5A, 10V
150°C
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
TK15S04N1L-LXHQ
Toshiba Semiconductor and Storage

MOSFET N-CH 40V 15A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 46W (Tc)
  • Rds On (Max) @ Id, Vgs: 17.8mOhm @ 7.5A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK+
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
パッケージ: -
在庫5,955
MOSFET (Metal Oxide)
40 V
15A (Ta)
4.5V, 10V
2.5V @ 100µA
10 nC @ 10 V
610 pF @ 10 V
±20V
-
46W (Tc)
17.8mOhm @ 7.5A, 10V
175°C
Surface Mount
DPAK+
TO-252-3, DPAK (2 Leads + Tab), SC-63
TPH9R506PL-LQ
Toshiba Semiconductor and Storage

MOSFET N-CH 60V 34A 8SOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1910 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 830mW (Ta), 81W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.5mOhm @ 17A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5)
  • Package / Case: 8-PowerVDFN
パッケージ: -
在庫23,427
MOSFET (Metal Oxide)
60 V
34A (Tc)
4.5V, 10V
2.5V @ 200µA
21 nC @ 10 V
1910 pF @ 30 V
±20V
-
830mW (Ta), 81W (Tc)
9.5mOhm @ 17A, 10V
175°C
Surface Mount
8-SOP Advance (5x5)
8-PowerVDFN
TK7A80W-S4X
Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR TO-

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 280µA
  • Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 950mOhm @ 3.3A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
パッケージ: -
在庫150
MOSFET (Metal Oxide)
800 V
6.5A (Ta)
10V
4V @ 280µA
13 nC @ 10 V
700 pF @ 300 V
±20V
-
35W (Tc)
950mOhm @ 3.3A, 10V
150°C
Through Hole
TO-220SIS
TO-220-3 Full Pack
2SK3700-F
Toshiba Semiconductor and Storage

MOSFET N-CH 900V 5A TO3P

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900 V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.5Ohm @ 3A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P(N)
  • Package / Case: TO-3P-3, SC-65-3
パッケージ: -
在庫57
MOSFET (Metal Oxide)
900 V
5A (Ta)
-
4V @ 1mA
28 nC @ 10 V
1150 pF @ 25 V
-
-
150W (Tc)
2.5Ohm @ 3A, 10V
150°C (TJ)
Through Hole
TO-3P(N)
TO-3P-3, SC-65-3
TW045Z120C-S1F
Toshiba Semiconductor and Storage

G3 1200V SIC-MOSFET TO-247-4L 4

  • FET Type: N-Channel
  • Technology: SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 5V @ 6.7mA
  • Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1969 pF @ 800 V
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 182W (Tc)
  • Rds On (Max) @ Id, Vgs: 62mOhm @ 20A, 18V
  • Operating Temperature: 175°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4L(X)
  • Package / Case: TO-247-4
パッケージ: -
在庫300
SiC (Silicon Carbide Junction Transistor)
1200 V
40A (Tc)
18V
5V @ 6.7mA
57 nC @ 18 V
1969 pF @ 800 V
+25V, -10V
-
182W (Tc)
62mOhm @ 20A, 18V
175°C
Through Hole
TO-247-4L(X)
TO-247-4
TK8A25DA-S4X
Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR TO-

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250 V
  • Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 500mOhm @ 3.8A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
パッケージ: -
Request a Quote
MOSFET (Metal Oxide)
250 V
7.5A (Ta)
10V
3.5V @ 1mA
16 nC @ 10 V
550 pF @ 100 V
±20V
-
30W (Tc)
500mOhm @ 3.8A, 10V
150°C
Through Hole
TO-220SIS
TO-220-3 Full Pack
TK110E10PL-S1X
Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 300µA
  • Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 87W (Tc)
  • Rds On (Max) @ Id, Vgs: 10.7mOhm @ 21A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
パッケージ: -
在庫813
MOSFET (Metal Oxide)
100 V
42A (Tc)
4.5V, 10V
2.5V @ 300µA
33 nC @ 10 V
2040 pF @ 50 V
±20V
-
87W (Tc)
10.7mOhm @ 21A, 10V
175°C
Through Hole
TO-220
TO-220-3
SSM3K341R-LXHF
Toshiba Semiconductor and Storage

AECQ MOSFET NCH 60V 6A SOT23F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.2W (Ta)
  • Rds On (Max) @ Id, Vgs: 36mOhm @ 5A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23F
  • Package / Case: SOT-23-3 Flat Leads
パッケージ: -
在庫93,201
MOSFET (Metal Oxide)
60 V
6A (Ta)
4V, 10V
2.5V @ 100µA
9.3 nC @ 10 V
550 pF @ 10 V
±20V
-
1.2W (Ta)
36mOhm @ 5A, 10V
175°C
Surface Mount
SOT-23F
SOT-23-3 Flat Leads
SSM3J377R-LXHF
Toshiba Semiconductor and Storage

AECQ MOSFET PCH 20V 3.9A SOT23

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
  • Vgs (Max): +6V, -8V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 93mOhm @ 1.5A, 4.5V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23F
  • Package / Case: SOT-23-3 Flat Leads
パッケージ: -
在庫16,590
MOSFET (Metal Oxide)
20 V
3.9A (Ta)
1.5V, 4.5V
1V @ 1mA
4.6 nC @ 4.5 V
290 pF @ 10 V
+6V, -8V
-
1W (Ta)
93mOhm @ 1.5A, 4.5V
150°C
Surface Mount
SOT-23F
SOT-23-3 Flat Leads
TK3R2A10PL-S4X
Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 54W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
パッケージ: -
在庫132
MOSFET (Metal Oxide)
100 V
100A (Tc)
4.5V, 10V
2.5V @ 1mA
161 nC @ 10 V
9500 pF @ 50 V
±20V
-
54W (Tc)
3.2mOhm @ 50A, 10V
175°C
Through Hole
TO-220SIS
TO-220-3 Full Pack
SSM6K404TU-LF
Toshiba Semiconductor and Storage

MOSFET N-CH 20V 3A UF6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 4 V
  • Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 10 V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 55mOhm @ 2A, 4V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: UF6
  • Package / Case: 6-SMD, Flat Leads
パッケージ: -
在庫4,911
MOSFET (Metal Oxide)
20 V
3A (Ta)
1.5V, 4V
1V @ 1mA
5.9 nC @ 4 V
400 pF @ 10 V
±10V
-
500mW (Ta)
55mOhm @ 2A, 4V
150°C
Surface Mount
UF6
6-SMD, Flat Leads
TPN7R504PL-LQ
Toshiba Semiconductor and Storage

MOSFET N-CH 40V 38A 8TSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 610mW (Ta), 61W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.5mOhm @ 19A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-TSON Advance (3.1x3.1)
  • Package / Case: 8-PowerVDFN
パッケージ: -
在庫8,424
MOSFET (Metal Oxide)
40 V
38A (Tc)
4.5V, 10V
2.4V @ 200µA
24 nC @ 10 V
2040 pF @ 20 V
±20V
-
610mW (Ta), 61W (Tc)
7.5mOhm @ 19A, 10V
175°C
Surface Mount
8-TSON Advance (3.1x3.1)
8-PowerVDFN
TK042N65Z5-S1F-S
Toshiba Semiconductor and Storage

650V DTMOS6 HSD 42MOHM TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 55A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 2.85mA
  • Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6280 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 360W (Tc)
  • Rds On (Max) @ Id, Vgs: 42mOhm @ 27.5A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
パッケージ: -
在庫630
MOSFET (Metal Oxide)
650 V
55A (Ta)
10V
4.5V @ 2.85mA
105 nC @ 10 V
6280 pF @ 300 V
±30V
-
360W (Tc)
42mOhm @ 27.5A, 10V
150°C
Through Hole
TO-247
TO-247-3
SSM5H16TU-LF
Toshiba Semiconductor and Storage

MOSFET N-CH 30V 1.9A UFV

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4 V
  • Input Capacitance (Ciss) (Max) @ Vds: 123 pF @ 15 V
  • Vgs (Max): ±12V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 133mOhm @ 1A, 4V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: UFV
  • Package / Case: 6-SMD (5 Leads), Flat Lead
パッケージ: -
在庫10,518
MOSFET (Metal Oxide)
30 V
1.9A (Ta)
1.8V, 4V
1V @ 1mA
1.9 nC @ 4 V
123 pF @ 15 V
±12V
Schottky Diode (Isolated)
500mW (Ta)
133mOhm @ 1A, 4V
150°C
Surface Mount
UFV
6-SMD (5 Leads), Flat Lead