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Toshiba Semiconductor and Storage |
MOSFET N-CH S-MINI FET
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 600µA @ 10V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 400mV @ 100nA
- Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
- Resistance - RDS(On): -
- Power - Max: 100mW
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SC-59
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パッケージ: TO-236-3, SC-59, SOT-23-3 |
在庫3,104 |
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Toshiba Semiconductor and Storage |
JFET DUAL N-CH USV
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 6mA @ 10V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 200mV @ 100nA
- Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
- Resistance - RDS(On): -
- Power - Max: 200mW
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 5-TSSOP, SC-70-5, SOT-353
- Supplier Device Package: USV
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パッケージ: 5-TSSOP, SC-70-5, SOT-353 |
在庫4,000 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 50V S-MINI
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 300µA @ 10V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 400mV @ 100nA
- Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
- Resistance - RDS(On): -
- Power - Max: 100mW
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
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パッケージ: TO-236-3, SC-59, SOT-23-3 |
在庫6,432 |
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Toshiba Semiconductor and Storage |
JFET N-CH 0.1W USM
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 2.6mA @ 10V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 400mV @ 100nA
- Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
- Resistance - RDS(On): -
- Power - Max: 100mW
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: USM
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パッケージ: SC-70, SOT-323 |
在庫5,024 |
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Toshiba Semiconductor and Storage |
MOSFET 2N-CH JFET 50V SMV
- FET Type: 2 N-Channel (Dual)
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 1.2mA @ 10V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 200mV @ 100nA
- Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
- Resistance - RDS(On): -
- Power - Max: 300mW
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-74A, SOT-753
- Supplier Device Package: SMV
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パッケージ: SC-74A, SOT-753 |
在庫26,616 |
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Toshiba Semiconductor and Storage |
MOSFET 2N-CH JFET 50V SMV
- FET Type: 2 N-Channel (Dual)
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 2.6mA @ 10V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 200mV @ 100nA
- Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
- Resistance - RDS(On): -
- Power - Max: 300mW
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-74A, SOT-753
- Supplier Device Package: SMV
|
パッケージ: SC-74A, SOT-753 |
在庫5,040 |
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Toshiba Semiconductor and Storage |
JFET N-CH 50V SMV
- FET Type: 2 N-Channel (Dual)
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 6mA @ 10V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 200mV @ 100nA
- Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
- Resistance - RDS(On): -
- Power - Max: 300mW
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-74A, SOT-753
- Supplier Device Package: SMV
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パッケージ: SC-74A, SOT-753 |
在庫148,380 |
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Toshiba Semiconductor and Storage |
JFET N-CH 50V 0.1W USM
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 50V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 6mA @ 10V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 1.5V @ 100nA
- Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
- Resistance - RDS(On): -
- Power - Max: 100mW
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SC-70
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パッケージ: SC-70, SOT-323 |
在庫25,356 |
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Toshiba Semiconductor and Storage |
JFET N-CH 50V 0.1W USM
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 50V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 2.6mA @ 10V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 1.5V @ 100nA
- Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
- Resistance - RDS(On): -
- Power - Max: 100mW
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SC-70
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パッケージ: SC-70, SOT-323 |
在庫50,250 |
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Toshiba Semiconductor and Storage |
JFET N-CH 50V 0.1W USM
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 50V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 1.2mA @ 10V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 1.5V @ 100nA
- Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
- Resistance - RDS(On): -
- Power - Max: 100mW
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: USM
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パッケージ: SC-70, SOT-323 |
在庫689,706 |
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Toshiba Semiconductor and Storage |
JFET N-CH 0.1W USM
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 1.2mA @ 10V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 400mV @ 100nA
- Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
- Resistance - RDS(On): -
- Power - Max: 100mW
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: USM
|
パッケージ: SC-70, SOT-323 |
在庫25,206 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 50V S-MINI
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 1.2mA @ 10V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 400mV @ 100nA
- Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
- Resistance - RDS(On): -
- Power - Max: 100mW
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
|
パッケージ: TO-236-3, SC-59, SOT-23-3 |
在庫22,500 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH S-MINI FET
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 2.6mA @ 10V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 400mV @ 100nA
- Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
- Resistance - RDS(On): -
- Power - Max: 100mW
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SC-59
|
パッケージ: TO-236-3, SC-59, SOT-23-3 |
在庫22,878 |
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Toshiba Semiconductor and Storage |
IGBT 600V 50A 240W TO3P LH
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 50A
- Current - Collector Pulsed (Icm): 100A
- Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 50A
- Power - Max: 240W
- Switching Energy: 1.3mJ (on), 1.34mJ (off)
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 90ns/300ns
- Test Condition: 300V, 50A, 13 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3PL
- Supplier Device Package: TO-3P(LH)
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パッケージ: TO-3PL |
在庫4,736 |
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Toshiba Semiconductor and Storage |
IGBT 400V 600MW 8TSSOP
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 400V
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): 150A
- Vce(on) (Max) @ Vge, Ic: 2.9V @ 4V, 150A
- Power - Max: 600mW
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 1.7µs/2µs
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
|
パッケージ: 8-TSSOP (0.173", 4.40mm Width) |
在庫2,100 |
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Toshiba Semiconductor and Storage |
IGBT 1000V 60A 170W TO3P LH
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1000V
- Current - Collector (Ic) (Max): 60A
- Current - Collector Pulsed (Icm): 120A
- Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 60A
- Power - Max: 170W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 330ns/700ns
- Test Condition: -
- Reverse Recovery Time (trr): 2.5µs
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3PL
- Supplier Device Package: TO-3P(LH)
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パッケージ: TO-3PL |
在庫22,140 |
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Toshiba Semiconductor and Storage |
IGBT 600V 10A 60W TO220SM
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 10A
- Current - Collector Pulsed (Icm): 20A
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A
- Power - Max: 60W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 400ns/400ns
- Test Condition: 300V, 10A, 100 Ohm, 15V
- Reverse Recovery Time (trr): 200ns
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-220SM
|
パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63 |
在庫2,992 |
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Toshiba Semiconductor and Storage |
IGBT 400V 1W 8-SOIC
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 400V
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): 200A
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 4V, 200A
- Power - Max: 1W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 3.1µs/2µs
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.173", 4.40mm Width)
- Supplier Device Package: 8-SOP (5.5x6.0)
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パッケージ: 8-SOIC (0.173", 4.40mm Width) |
在庫2,432 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 60V 5A PW-MOLD
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 20W (Tc)
- Rds On (Max) @ Id, Vgs: 170 mOhm @ 2.5A, 10V
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: PW-MOLD
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63 |
在庫6,096 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-92MOD
- Package / Case: TO-226-3, TO-92-3 Long Body
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パッケージ: TO-226-3, TO-92-3 Long Body |
在庫5,504 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-92MOD
- Package / Case: TO-226-3, TO-92-3 Long Body
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パッケージ: TO-226-3, TO-92-3 Long Body |
在庫3,328 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-92MOD
- Package / Case: TO-226-3, TO-92-3 Long Body
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パッケージ: TO-226-3, TO-92-3 Long Body |
在庫6,816 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-92MOD
- Package / Case: TO-226-3, TO-92-3 Long Body
|
パッケージ: TO-226-3, TO-92-3 Long Body |
在庫3,056 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-92MOD
- Package / Case: TO-226-3, TO-92-3 Long Body
|
パッケージ: TO-226-3, TO-92-3 Long Body |
在庫7,824 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-92MOD
- Package / Case: TO-226-3, TO-92-3 Long Body
|
パッケージ: TO-226-3, TO-92-3 Long Body |
在庫3,648 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-92MOD
- Package / Case: TO-226-3, TO-92-3 Long Body
|
パッケージ: TO-226-3, TO-92-3 Long Body |
在庫7,568 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-92MOD
- Package / Case: TO-226-3, TO-92-3 Long Body
|
パッケージ: TO-226-3, TO-92-3 Long Body |
在庫5,424 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-92MOD
- Package / Case: TO-226-3, TO-92-3 Long Body
|
パッケージ: TO-226-3, TO-92-3 Long Body |
在庫2,064 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-92MOD
- Package / Case: TO-226-3, TO-92-3 Long Body
|
パッケージ: TO-226-3, TO-92-3 Long Body |
在庫3,408 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-92MOD
- Package / Case: TO-226-3, TO-92-3 Long Body
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パッケージ: TO-226-3, TO-92-3 Long Body |
在庫5,200 |
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