ページ 162 - Vishay Semiconductor Diodes Division 製品 - ダイオード - 整流器 - シングル

部品番号	メーカ	説明	パッケージ	在庫	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
SS33HE3_A/I	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 30V 3A DO214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 125°C	パッケージ: DO-214AB, SMC	在庫6,752	30V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 125°C
SS32HE3_A/I	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 20V 3A DO214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 20V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -65°C ~ 125°C	パッケージ: DO-214AB, SMC	在庫6,016	20V	3A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 20V	-	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-65°C ~ 125°C
UH3DHE3_A/H	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 3A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 175°C	パッケージ: DO-214AB, SMC	在庫5,984	200V	3A	1.05V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	40ns	5µA @ 200V	-	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 175°C
UH3CHE3_A/H	Vishay Semiconductor Diodes Division	DIODE GEN PURP 150V 3A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40ns Current - Reverse Leakage @ Vr: 5µA @ 150V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 175°C	パッケージ: DO-214AB, SMC	在庫2,240	150V	3A	1.05V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	40ns	5µA @ 150V	-	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 175°C
UH3BHE3_A/H	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 3A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 175°C	パッケージ: DO-214AB, SMC	在庫3,120	100V	3A	1.05V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	40ns	5µA @ 100V	-	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 175°C
UH3DHE3_A/I	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 3A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 175°C	パッケージ: DO-214AB, SMC	在庫5,472	200V	3A	1.05V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	40ns	5µA @ 200V	-	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 175°C
UH3CHE3_A/I	Vishay Semiconductor Diodes Division	DIODE GEN PURP 150V 3A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40ns Current - Reverse Leakage @ Vr: 5µA @ 150V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 175°C	パッケージ: DO-214AB, SMC	在庫2,096	150V	3A	1.05V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	40ns	5µA @ 150V	-	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 175°C
UH3BHE3_A/I	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 3A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 175°C	パッケージ: DO-214AB, SMC	在庫4,992	100V	3A	1.05V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	40ns	5µA @ 100V	-	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 175°C
SGL41-60-E3/97	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 60V 1A DO213AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 700mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 60V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF Supplier Device Package: DO-213AB Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: DO-213AB, MELF	在庫3,024	60V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	80pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF	DO-213AB	-55°C ~ 150°C
SGL41-50-E3/97	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 50V 1A DO213AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 700mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 50V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF Supplier Device Package: DO-213AB Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: DO-213AB, MELF	在庫4,976	50V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	80pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF	DO-213AB	-55°C ~ 150°C
VS-4ESH02HM3/87A	Vishay Semiconductor Diodes Division	DIODE FRED Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 930mV @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 2µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: TO-277, 3-PowerDFN	在庫2,544	200V	4A	930mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	2µA @ 200V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-65°C ~ 175°C
VS-4ESH01HM3/87A	Vishay Semiconductor Diodes Division	DIODE FRED Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 930mV @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 2µA @ 4V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: TO-277, 3-PowerDFN	在庫4,400	100V	4A	930mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	2µA @ 4V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-65°C ~ 175°C
VS-6ESU06HM3/87A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 6A TO277A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 6A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 58ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: TO-277, 3-PowerDFN	在庫4,288	600V	6A	1.3V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	58ns	5µA @ 600V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-65°C ~ 175°C
VS-6ESH06HM3/87A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 6A TO277A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 6A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: TO-277, 3-PowerDFN	在庫2,032	600V	6A	1.8V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	40ns	5µA @ 600V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-65°C ~ 175°C
SS10PH45-M3/86A	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 45V 10A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 720mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 80µA @ 45V Capacitance @ Vr, F: 270pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 175°C	パッケージ: TO-277, 3-PowerDFN	在庫369,600	45V	10A	720mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	80µA @ 45V	270pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
GP30K-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 5µs Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: DO-201AD, Axial	在庫3,792	800V	3A	1.1V @ 3A	Standard Recovery >500ns, > 200mA (Io)	5µs	5µA @ 800V	40pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 175°C
GP30M-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 5µs Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: DO-201AD, Axial	在庫7,456	1000V	3A	1.1V @ 3A	Standard Recovery >500ns, > 200mA (Io)	5µs	5µA @ 1000V	-	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 175°C
GP30J-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 5µs Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: DO-201AD, Axial	在庫8,508	600V	3A	1.1V @ 3A	Standard Recovery >500ns, > 200mA (Io)	5µs	5µA @ 600V	-	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 175°C
GP30G-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 5µs Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: DO-201AD, Axial	在庫7,232	400V	3A	1.1V @ 3A	Standard Recovery >500ns, > 200mA (Io)	5µs	5µA @ 400V	-	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 175°C
GP30D-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 5µs Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: DO-201AD, Axial	在庫4,112	200V	3A	1.1V @ 3A	Standard Recovery >500ns, > 200mA (Io)	5µs	5µA @ 200V	-	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 175°C
GP30B-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 5µs Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: DO-201AD, Axial	在庫2,448	100V	3A	1.2V @ 3A	Standard Recovery >500ns, > 200mA (Io)	5µs	5µA @ 100V	-	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 175°C
GP30A-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 5µs Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: DO-201AD, Axial	在庫3,520	50V	3A	1.2V @ 3A	Standard Recovery >500ns, > 200mA (Io)	5µs	5µA @ 50V	-	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 175°C
GP25M-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 2.5A DO201 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 2.5A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: DO-201AD, Axial	在庫7,248	1000V	2.5A	-	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 175°C
GP30M-E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 5µs Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: DO-201AD, Axial	在庫6,128	1000V	3A	1.1V @ 3A	Standard Recovery >500ns, > 200mA (Io)	5µs	5µA @ 1000V	-	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 175°C
GP30K-E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 5µs Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: DO-201AD, Axial	在庫4,976	800V	3A	1.1V @ 3A	Standard Recovery >500ns, > 200mA (Io)	5µs	5µA @ 800V	40pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 175°C
GP30J-E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 5µs Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: DO-201AD, Axial	在庫3,056	600V	3A	1.1V @ 3A	Standard Recovery >500ns, > 200mA (Io)	5µs	5µA @ 600V	-	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 175°C
GP30D-E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 5µs Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: DO-201AD, Axial	在庫3,280	200V	3A	1.1V @ 3A	Standard Recovery >500ns, > 200mA (Io)	5µs	5µA @ 200V	-	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 175°C
GP30B-E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 5µs Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: DO-201AD, Axial	在庫3,312	100V	3A	1.2V @ 3A	Standard Recovery >500ns, > 200mA (Io)	5µs	5µA @ 100V	-	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 175°C

SS33HE3_A/I

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 3A DO214AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: -55°C ~ 125°C

パッケージ: DO-214AB, SMC

在庫6,752

30V

3A

500mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 30V

-

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

-55°C ~ 125°C

SS32HE3_A/I

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 20V 3A DO214AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: -65°C ~ 125°C

パッケージ: DO-214AB, SMC

在庫6,016

20V

3A

500mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 20V

-

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

-65°C ~ 125°C

UH3DHE3_A/H

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 3A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: DO-214AB, SMC

在庫5,984

200V

3A

1.05V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

40ns

5µA @ 200V

-

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

-55°C ~ 175°C

UH3CHE3_A/H

Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 3A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40ns
Current - Reverse Leakage @ Vr: 5µA @ 150V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: DO-214AB, SMC

在庫2,240

150V

3A

1.05V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

40ns

5µA @ 150V

-

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

-55°C ~ 175°C

UH3BHE3_A/H

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 3A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: DO-214AB, SMC

在庫3,120

100V

3A

1.05V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

40ns

5µA @ 100V

-

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

-55°C ~ 175°C

UH3DHE3_A/I

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 3A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: DO-214AB, SMC

在庫5,472

200V

3A

1.05V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

40ns

5µA @ 200V

-

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

-55°C ~ 175°C

UH3CHE3_A/I

Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 3A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40ns
Current - Reverse Leakage @ Vr: 5µA @ 150V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: DO-214AB, SMC

在庫2,096

150V

3A

1.05V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

40ns

5µA @ 150V

-

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

-55°C ~ 175°C

UH3BHE3_A/I

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 3A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: DO-214AB, SMC

在庫4,992

100V

3A

1.05V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

40ns

5µA @ 100V

-

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

-55°C ~ 175°C

SGL41-60-E3/97

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 1A DO213AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 60V
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: DO-213AB, MELF

在庫3,024

60V

1A

700mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 60V

80pF @ 4V, 1MHz

Surface Mount

DO-213AB, MELF

DO-213AB

-55°C ~ 150°C

SGL41-50-E3/97

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 50V 1A DO213AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 50V
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: DO-213AB, MELF

在庫4,976

50V

1A

700mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 50V

80pF @ 4V, 1MHz

Surface Mount

DO-213AB, MELF

DO-213AB

-55°C ~ 150°C

VS-4ESH02HM3/87A

Vishay Semiconductor Diodes Division

DIODE FRED

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 930mV @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 2µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: TO-277, 3-PowerDFN

在庫2,544

200V

4A

930mV @ 4A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

2µA @ 200V

-

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-65°C ~ 175°C

VS-4ESH01HM3/87A

Vishay Semiconductor Diodes Division

DIODE FRED

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 930mV @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 2µA @ 4V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: TO-277, 3-PowerDFN

在庫4,400

100V

4A

930mV @ 4A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

2µA @ 4V

-

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-65°C ~ 175°C

VS-6ESU06HM3/87A

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 6A TO277A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 6A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 58ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: TO-277, 3-PowerDFN

在庫4,288

600V

6A

1.3V @ 6A

Fast Recovery =< 500ns, > 200mA (Io)

58ns

5µA @ 600V

-

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-65°C ~ 175°C

VS-6ESH06HM3/87A

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 6A TO277A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 6A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: TO-277, 3-PowerDFN

在庫2,032

600V

6A

1.8V @ 6A

Fast Recovery =< 500ns, > 200mA (Io)

40ns

5µA @ 600V

-

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-65°C ~ 175°C

SS10PH45-M3/86A

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 10A TO277A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 720mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 80µA @ 45V
Capacitance @ Vr, F: 270pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: TO-277, 3-PowerDFN

在庫369,600

45V

10A

720mV @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

80µA @ 45V

270pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-55°C ~ 175°C

GP30K-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5µs
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: DO-201AD, Axial

在庫3,792

800V

3A

1.1V @ 3A

Standard Recovery >500ns, > 200mA (Io)

5µs

5µA @ 800V

40pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-65°C ~ 175°C

GP30M-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5µs
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: DO-201AD, Axial

在庫7,456

1000V

3A

1.1V @ 3A

Standard Recovery >500ns, > 200mA (Io)

5µs

5µA @ 1000V

-

Through Hole

DO-201AD, Axial

DO-201AD

-65°C ~ 175°C

GP30J-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5µs
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: DO-201AD, Axial

在庫8,508

600V

3A

1.1V @ 3A

Standard Recovery >500ns, > 200mA (Io)

5µs

5µA @ 600V

-

Through Hole

DO-201AD, Axial

DO-201AD

-65°C ~ 175°C

GP30G-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5µs
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: DO-201AD, Axial

在庫7,232

400V

3A

1.1V @ 3A

Standard Recovery >500ns, > 200mA (Io)

5µs

5µA @ 400V

-

Through Hole

DO-201AD, Axial

DO-201AD

-65°C ~ 175°C

GP30D-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5µs
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: DO-201AD, Axial

在庫4,112

200V

3A

1.1V @ 3A

Standard Recovery >500ns, > 200mA (Io)

5µs

5µA @ 200V

-

Through Hole

DO-201AD, Axial

DO-201AD

-65°C ~ 175°C

GP30B-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5µs
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: DO-201AD, Axial

在庫2,448

100V

3A

1.2V @ 3A

Standard Recovery >500ns, > 200mA (Io)

5µs

5µA @ 100V

-

Through Hole

DO-201AD, Axial

DO-201AD

-65°C ~ 175°C

GP30A-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5µs
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: DO-201AD, Axial

在庫3,520

50V

3A

1.2V @ 3A

Standard Recovery >500ns, > 200mA (Io)

5µs

5µA @ 50V

-

Through Hole

DO-201AD, Axial

DO-201AD

-65°C ~ 175°C

GP25M-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 2.5A DO201

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 2.5A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: DO-201AD, Axial

在庫7,248

1000V

2.5A

-

Standard Recovery >500ns, > 200mA (Io)

-

Through Hole

DO-201AD, Axial

DO-201AD

-65°C ~ 175°C

GP30M-E3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5µs
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: DO-201AD, Axial

在庫6,128

1000V

3A

1.1V @ 3A

Standard Recovery >500ns, > 200mA (Io)

5µs

5µA @ 1000V

-

Through Hole

DO-201AD, Axial

DO-201AD

-65°C ~ 175°C

GP30K-E3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5µs
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: DO-201AD, Axial

在庫4,976

800V

3A

1.1V @ 3A

Standard Recovery >500ns, > 200mA (Io)

5µs

5µA @ 800V

40pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-65°C ~ 175°C

GP30J-E3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5µs
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: DO-201AD, Axial

在庫3,056

600V

3A

1.1V @ 3A

Standard Recovery >500ns, > 200mA (Io)

5µs

5µA @ 600V

-

Through Hole

DO-201AD, Axial

DO-201AD

-65°C ~ 175°C

GP30D-E3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5µs
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: DO-201AD, Axial

在庫3,280

200V

3A

1.1V @ 3A

Standard Recovery >500ns, > 200mA (Io)

5µs

5µA @ 200V

-

Through Hole

DO-201AD, Axial

DO-201AD

-65°C ~ 175°C

GP30B-E3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5µs
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: DO-201AD, Axial

在庫3,312

100V

3A

1.2V @ 3A

Standard Recovery >500ns, > 200mA (Io)

5µs

5µA @ 100V

-

Through Hole

DO-201AD, Axial

DO-201AD

-65°C ~ 175°C