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Vishay Semiconductor Diodes Division |
IGBT 1200V 150A 543W
- IGBT Type: -
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 150A
- Power - Max: 543W
- Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 75A
- Current - Collector Cutoff (Max): 5mA
- Input Capacitance (Cies) @ Vce: 5.52nF @ 25V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: INT-A-Pak
- Supplier Device Package: INT-A-PAK
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パッケージ: INT-A-Pak |
在庫3,984 |
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Vishay Semiconductor Diodes Division |
IGBT 600V 220A 780W
- IGBT Type: PT
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 220A
- Power - Max: 780W
- Vce(on) (Max) @ Vge, Ic: 1.28V @ 15V, 100A
- Current - Collector Cutoff (Max): 1mA
- Input Capacitance (Cies) @ Vce: 16.25nF @ 30V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: INT-A-Pak
- Supplier Device Package: INT-A-PAK
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パッケージ: INT-A-Pak |
在庫4,256 |
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Vishay Semiconductor Diodes Division |
IGBT 600V 480A 830W
- IGBT Type: -
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 480A
- Power - Max: 830W
- Vce(on) (Max) @ Vge, Ic: 1.21V @ 15V, 200A
- Current - Collector Cutoff (Max): 1mA
- Input Capacitance (Cies) @ Vce: 32.5nF @ 30V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: INT-A-Pak
- Supplier Device Package: INT-A-PAK
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パッケージ: INT-A-Pak |
在庫7,296 |
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Vishay Semiconductor Diodes Division |
IGBT 1200V 150A 446W INT-A-PAK
- IGBT Type: -
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 150A
- Power - Max: 446W
- Vce(on) (Max) @ Vge, Ic: 2.08V @ 15V, 75A (Typ)
- Current - Collector Cutoff (Max): 1mA
- Input Capacitance (Cies) @ Vce: 9.45nF @ 30V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: INT-A-PAK (3 + 4)
- Supplier Device Package: INT-A-PAK
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パッケージ: INT-A-PAK (3 + 4) |
在庫6,064 |
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Vishay Semiconductor Diodes Division |
IGBT 1200V 750A 2344W DIAP
- IGBT Type: Trench
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 750A
- Power - Max: 2344W
- Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 400A
- Current - Collector Cutoff (Max): 5mA
- Input Capacitance (Cies) @ Vce: 51.2nF @ 30V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Double INT-A-PAK (3 + 8)
- Supplier Device Package: Double INT-A-PAK
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パッケージ: Double INT-A-PAK (3 + 8) |
在庫5,232 |
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Vishay Semiconductor Diodes Division |
IGBT 1200V 600A 2119W DIAP
- IGBT Type: Trench
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 600A
- Power - Max: 2119W
- Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A
- Current - Collector Cutoff (Max): 5mA
- Input Capacitance (Cies) @ Vce: 28.8nF @ 25V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Double INT-A-PAK (3 + 8)
- Supplier Device Package: Double INT-A-PAK
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パッケージ: Double INT-A-PAK (3 + 8) |
在庫3,408 |
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Vishay Semiconductor Diodes Division |
IGBT 1200V 180A 652W INT-A-PAK
- IGBT Type: Trench
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 180A
- Power - Max: 652W
- Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 100A
- Current - Collector Cutoff (Max): 5mA
- Input Capacitance (Cies) @ Vce: 12.8nF @ 30V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: INT-A-PAK (3 + 4)
- Supplier Device Package: INT-A-PAK
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パッケージ: INT-A-PAK (3 + 4) |
在庫7,952 |
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Vishay Semiconductor Diodes Division |
IGBT 1200V 134A 463W SOT-227
- IGBT Type: Trench
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 134A
- Power - Max: 463W
- Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 100A
- Current - Collector Cutoff (Max): 100µA
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
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パッケージ: SOT-227-4, miniBLOC |
在庫6,880 |
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Vishay Semiconductor Diodes Division |
IGBT 1200V 134A 463W SOT-227
- IGBT Type: Trench
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 134A
- Power - Max: 463W
- Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 100A
- Current - Collector Cutoff (Max): 100µA
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
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パッケージ: SOT-227-4, miniBLOC |
在庫3,936 |
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Vishay Semiconductor Diodes Division |
IGBT 600V 184A 577W SOT-227
- IGBT Type: Trench
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 184A
- Power - Max: 577W
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
- Current - Collector Cutoff (Max): 100µA
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
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パッケージ: SOT-227-4, miniBLOC |
在庫2,304 |
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Vishay Semiconductor Diodes Division |
IGBT 1200V 258A 893W SOT-227
- IGBT Type: Trench
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 258A
- Power - Max: 893W
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
- Current - Collector Cutoff (Max): 100µA
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
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パッケージ: SOT-227-4, miniBLOC |
在庫3,904 |
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Vishay Semiconductor Diodes Division |
MODULE IGBT SOT-227
- IGBT Type: NPT
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): -
- Power - Max: 658W
- Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 75A
- Current - Collector Cutoff (Max): 250µA
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
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パッケージ: SOT-227-4, miniBLOC |
在庫3,104 |
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Vishay Semiconductor Diodes Division |
IGBT 1200V 170A 658W INT-A-PAK
- IGBT Type: -
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 170A
- Power - Max: 658W
- Vce(on) (Max) @ Vge, Ic: 1.82V @ 15V, 75A (Typ)
- Current - Collector Cutoff (Max): 1mA
- Input Capacitance (Cies) @ Vce: 5.52nF @ 25V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: INT-A-PAK (3 + 4)
- Supplier Device Package: INT-A-PAK
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パッケージ: INT-A-PAK (3 + 4) |
在庫5,712 |
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Vishay Semiconductor Diodes Division |
MODULE IGBT SOT-227
- IGBT Type: NPT
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): -
- Power - Max: 658W
- Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 75A
- Current - Collector Cutoff (Max): 250µA
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
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パッケージ: SOT-227-4, miniBLOC |
在庫6,752 |
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Vishay Semiconductor Diodes Division |
IGBT 600V 111A 447W SOT-227
- IGBT Type: NPT
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 111A
- Power - Max: 447W
- Vce(on) (Max) @ Vge, Ic: 2.44V @ 15V, 70A
- Current - Collector Cutoff (Max): 100µA
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
|
パッケージ: SOT-227-4, miniBLOC |
在庫5,008 |
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Vishay Semiconductor Diodes Division |
IGBT 600V 111A 447W SOT-227
- IGBT Type: NPT
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 111A
- Power - Max: 447W
- Vce(on) (Max) @ Vge, Ic: 2.44V @ 15V, 70A
- Current - Collector Cutoff (Max): 100µA
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
|
パッケージ: SOT-227-4, miniBLOC |
在庫3,280 |
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Vishay Semiconductor Diodes Division |
IGBT 1200V 84A 431W SOT-227
- IGBT Type: NPT
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 84A
- Power - Max: 431W
- Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 50A
- Current - Collector Cutoff (Max): 50µA
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
|
パッケージ: SOT-227-4, miniBLOC |
在庫3,824 |
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Vishay Semiconductor Diodes Division |
IGBT 1200V 84A 431W SOT-227
- IGBT Type: NPT
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 84A
- Power - Max: 431W
- Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 50A
- Current - Collector Cutoff (Max): 50µA
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
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パッケージ: SOT-227-4, miniBLOC |
在庫5,184 |
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Vishay Semiconductor Diodes Division |
IGBT 1200V 150A 735W INT-A-PAK
- IGBT Type: -
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 150A
- Power - Max: 735W
- Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 100A
- Current - Collector Cutoff (Max): 2mA
- Input Capacitance (Cies) @ Vce: 4.3nF @ 25V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: INT-A-Pak
- Supplier Device Package: INT-A-PAK
|
パッケージ: INT-A-Pak |
在庫4,992 |
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Vishay Semiconductor Diodes Division |
MODULE IGBT SOT-227
- IGBT Type: -
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 125A
- Power - Max: 447W
- Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 100A
- Current - Collector Cutoff (Max): 100µA
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
|
パッケージ: SOT-227-4, miniBLOC |
在庫7,840 |
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Vishay Semiconductor Diodes Division |
MODULE IGBT SOT-227
- IGBT Type: -
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): -
- Power - Max: 781W
- Vce(on) (Max) @ Vge, Ic: 1.3V @ 15V, 100A
- Current - Collector Cutoff (Max): 1mA
- Input Capacitance (Cies) @ Vce: 16.25nF @ 30V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
|
パッケージ: SOT-227-4, miniBLOC |
在庫3,504 |
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Vishay Semiconductor Diodes Division |
IGBT 600V 480A 830W INT-A-PAK
- IGBT Type: -
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 480A
- Power - Max: 830W
- Vce(on) (Max) @ Vge, Ic: 1.21V @ 15V, 200A
- Current - Collector Cutoff (Max): 1mA
- Input Capacitance (Cies) @ Vce: 32.5nF @ 30V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: INT-A-Pak
- Supplier Device Package: INT-A-PAK
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パッケージ: INT-A-Pak |
在庫4,208 |
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Vishay Semiconductor Diodes Division |
IGBT 600V 220A 780W INT-A-PAK
- IGBT Type: PT
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 220A
- Power - Max: 780W
- Vce(on) (Max) @ Vge, Ic: 1.28V @ 15V, 100A
- Current - Collector Cutoff (Max): 1mA
- Input Capacitance (Cies) @ Vce: 16.25nF @ 30V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: INT-A-Pak
- Supplier Device Package: INT-A-PAK
|
パッケージ: INT-A-Pak |
在庫5,824 |
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Vishay Semiconductor Diodes Division |
IGBT 1200V 182A 520W INT-A-PAK
- IGBT Type: -
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 182A
- Power - Max: 520W
- Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
- Current - Collector Cutoff (Max): 1mA
- Input Capacitance (Cies) @ Vce: 18.67nF @ 30V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: INT-A-Pak
- Supplier Device Package: INT-A-PAK
|
パッケージ: INT-A-Pak |
在庫5,536 |
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Vishay Semiconductor Diodes Division |
IGBT 600V 100A 250W SOT-227
- IGBT Type: -
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 100A
- Power - Max: 250W
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
- Current - Collector Cutoff (Max): 250µA
- Input Capacitance (Cies) @ Vce: 7.4nF @ 30V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
|
パッケージ: SOT-227-4, miniBLOC |
在庫6,112 |
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Vishay Semiconductor Diodes Division |
IGBT 600V 88A 338W EMIPAK2
- IGBT Type: -
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 88A
- Power - Max: 338W
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
- Current - Collector Cutoff (Max): 100µA
- Input Capacitance (Cies) @ Vce: 9.5nF @ 30V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: EMIPAK2
- Supplier Device Package: EMIPAK2
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パッケージ: EMIPAK2 |
在庫3,776 |
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Vishay Semiconductor Diodes Division |
IGBT 600V 88A 338W EMIPAK2
- IGBT Type: -
- Configuration: Three Level Inverter
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 88A
- Power - Max: 338W
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
- Current - Collector Cutoff (Max): 100µA
- Input Capacitance (Cies) @ Vce: 9.5nF @ 30V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: EMIPAK2
- Supplier Device Package: EMIPAK2
|
パッケージ: EMIPAK2 |
在庫3,536 |
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Vishay Semiconductor Diodes Division |
MOD IGBT 3PHASE INV 600V SIP
- IGBT Type: -
- Configuration: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 11A
- Power - Max: 36W
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A
- Current - Collector Cutoff (Max): 250µA
- Input Capacitance (Cies) @ Vce: 0.74nF @ 30V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 19-SIP (13 Leads), IMS-2
- Supplier Device Package: IMS-2
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パッケージ: 19-SIP (13 Leads), IMS-2 |
在庫4,528 |
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Vishay Semiconductor Diodes Division |
MODULE IGBT 1200V 35A ECONO2 6PK
- IGBT Type: NPT
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 50A
- Power - Max: 284W
- Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 50A
- Current - Collector Cutoff (Max): 100µA
- Input Capacitance (Cies) @ Vce: 3.475nF @ 30V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: ECONO2
- Supplier Device Package: -
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パッケージ: ECONO2 |
在庫6,144 |
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Vishay Semiconductor Diodes Division |
IGBT UFAST 600V 100A MTP
- IGBT Type: -
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 100A
- Power - Max: 445W
- Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 100A
- Current - Collector Cutoff (Max): 250µA
- Input Capacitance (Cies) @ Vce: 14.7nF @ 30V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: 10-MTP
- Supplier Device Package: 10-MTP
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パッケージ: 10-MTP |
在庫5,792 |
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