ページ 156 - Vishay Siliconix 製品 - トランジスタ - FET、MOSFET - シングル | Heisener Electronics
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Vishay Siliconix 製品 - トランジスタ - FET、MOSFET - シングル

レコード 4,844
ページ  156/173
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Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
hot SI7860ADP-T1-E3
Vishay Siliconix

MOSFET N-CH 30V 11A PPAK SO-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta)
  • Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 16A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
パッケージ: PowerPAK? SO-8
在庫133,776
MOSFET (Metal Oxide)
30V
11A (Ta)
4.5V, 10V
3V @ 250µA
18nC @ 4.5V
-
±20V
-
1.8W (Ta)
9.5 mOhm @ 16A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8
PowerPAK? SO-8
SIHF18N50C-E3
Vishay Siliconix

MOSFET N-CH 500V 18A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 76nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2942pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 38W (Tc)
  • Rds On (Max) @ Id, Vgs: 270 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
パッケージ: TO-220-3
在庫4,368
MOSFET (Metal Oxide)
500V
18A (Tc)
10V
5V @ 250µA
76nC @ 10V
2942pF @ 25V
±30V
-
38W (Tc)
270 mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
SIA411DJ-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 12A SC70-6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.9A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SC-70-6 Single
  • Package / Case: PowerPAK? SC-70-6
パッケージ: PowerPAK? SC-70-6
在庫4,400
MOSFET (Metal Oxide)
20V
12A (Tc)
1.5V, 4.5V
1V @ 250µA
38nC @ 8V
1200pF @ 10V
±8V
-
3.5W (Ta), 19W (Tc)
30 mOhm @ 5.9A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SC-70-6 Single
PowerPAK? SC-70-6
hot SI7483ADP-T1-GE3
Vishay Siliconix

MOSFET P-CH 30V 14A PPAK SO-8

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.9W (Ta)
  • Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 24A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
パッケージ: PowerPAK? SO-8
在庫13,536
MOSFET (Metal Oxide)
30V
14A (Ta)
4.5V, 10V
3V @ 250µA
180nC @ 10V
-
±20V
-
1.9W (Ta)
5.7 mOhm @ 24A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8
PowerPAK? SO-8
SI7459DP-T1-GE3
Vishay Siliconix

MOSFET P-CH 30V 13A PPAK SO-8

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 1.9W (Ta)
  • Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 22A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
パッケージ: PowerPAK? SO-8
在庫7,920
MOSFET (Metal Oxide)
30V
13A (Ta)
10V
3V @ 250µA
170nC @ 10V
-
±25V
-
1.9W (Ta)
6.8 mOhm @ 22A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8
PowerPAK? SO-8
hot SI7411DN-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 7.5A 1212-8

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 300µA
  • Gate Charge (Qg) (Max) @ Vgs: 41nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 19 mOhm @ 11.4A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? 1212-8
  • Package / Case: PowerPAK? 1212-8
パッケージ: PowerPAK? 1212-8
在庫14,640
MOSFET (Metal Oxide)
20V
7.5A (Ta)
1.8V, 4.5V
1V @ 300µA
41nC @ 4.5V
-
±8V
-
1.5W (Ta)
19 mOhm @ 11.4A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? 1212-8
PowerPAK? 1212-8
hot SI7366DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 20V 13A PPAK SO-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.7W (Ta)
  • Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
パッケージ: PowerPAK? SO-8
在庫13,176
MOSFET (Metal Oxide)
20V
13A (Ta)
4.5V, 10V
3V @ 250µA
25nC @ 4.5V
-
±20V
-
1.7W (Ta)
5.5 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8
PowerPAK? SO-8
hot SI7107DN-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 9.8A 1212-8

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 450µA
  • Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 10.8 mOhm @ 15.3A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? 1212-8
  • Package / Case: PowerPAK? 1212-8
パッケージ: PowerPAK? 1212-8
在庫17,844
MOSFET (Metal Oxide)
20V
9.8A (Ta)
1.8V, 4.5V
1V @ 450µA
44nC @ 4.5V
-
±8V
-
1.5W (Ta)
10.8 mOhm @ 15.3A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? 1212-8
PowerPAK? 1212-8
SI6459BDQ-T1-GE3
Vishay Siliconix

MOSFET P-CH 60V 2.2A 8-TSSOP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 115 mOhm @ 2.7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-TSSOP
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
パッケージ: 8-TSSOP (0.173", 4.40mm Width)
在庫3,120
MOSFET (Metal Oxide)
60V
2.2A (Ta)
4.5V, 10V
3V @ 250µA
22nC @ 10V
-
±20V
-
1W (Ta)
115 mOhm @ 2.7A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP
8-TSSOP (0.173", 4.40mm Width)
hot SI6433BDQ-T1-GE3
Vishay Siliconix

MOSFET P-CH 12V 4A 8-TSSOP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1.05W (Ta)
  • Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.8A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-TSSOP
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
パッケージ: 8-TSSOP (0.173", 4.40mm Width)
在庫699,876
MOSFET (Metal Oxide)
12V
4A (Ta)
2.5V, 4.5V
1.5V @ 250µA
15nC @ 4.5V
-
±8V
-
1.05W (Ta)
40 mOhm @ 4.8A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP
8-TSSOP (0.173", 4.40mm Width)
hot SI6410DQ-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 7.8A 8-TSSOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 14 mOhm @ 7.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-TSSOP
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
パッケージ: 8-TSSOP (0.173", 4.40mm Width)
在庫108,000
MOSFET (Metal Oxide)
30V
-
4.5V, 10V
1V @ 250µA (Min)
33nC @ 5V
-
±20V
-
1.5W (Ta)
14 mOhm @ 7.8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP
8-TSSOP (0.173", 4.40mm Width)
hot SI5447DC-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 3.5A 1206-8

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1.3W (Ta)
  • Rds On (Max) @ Id, Vgs: 76 mOhm @ 3.5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 1206-8 ChipFET?
  • Package / Case: 8-SMD, Flat Lead
パッケージ: 8-SMD, Flat Lead
在庫14,256
MOSFET (Metal Oxide)
20V
3.5A (Ta)
1.8V, 4.5V
450mV @ 250µA (Min)
10nC @ 4.5V
-
±8V
-
1.3W (Ta)
76 mOhm @ 3.5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
1206-8 ChipFET?
8-SMD, Flat Lead
hot SI5435BDC-T1-GE3
Vishay Siliconix

MOSFET P-CH 30V 4.3A 1206-8

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.3W (Ta)
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 4.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 1206-8 ChipFET?
  • Package / Case: 8-SMD, Flat Lead
パッケージ: 8-SMD, Flat Lead
在庫136,596
MOSFET (Metal Oxide)
30V
4.3A (Ta)
4.5V, 10V
3V @ 250µA
24nC @ 10V
-
±20V
-
1.3W (Ta)
45 mOhm @ 4.3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
1206-8 ChipFET?
8-SMD, Flat Lead
hot SI4825DY-T1-GE3
Vishay Siliconix

MOSFET P-CH 30V 8.1A 8-SOIC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 14 mOhm @ 11.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
パッケージ: 8-SOIC (0.154", 3.90mm Width)
在庫11,148
MOSFET (Metal Oxide)
30V
8.1A (Ta)
4.5V, 10V
3V @ 250µA
71nC @ 10V
-
±25V
-
1.5W (Ta)
14 mOhm @ 11.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
hot SI1071X-T1-GE3
Vishay Siliconix

MOSFET P-CH 30V 0.96A SC89-6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Vgs(th) (Max) @ Id: 1.45V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 236mW (Ta)
  • Rds On (Max) @ Id, Vgs: 167 mOhm @ 960mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-89-6
  • Package / Case: SOT-563, SOT-666
パッケージ: SOT-563, SOT-666
在庫72,120
MOSFET (Metal Oxide)
30V
-
2.5V, 10V
1.45V @ 250µA
13.3nC @ 10V
315pF @ 15V
±12V
-
236mW (Ta)
167 mOhm @ 960mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SC-89-6
SOT-563, SOT-666
hot SI1065X-T1-GE3
Vishay Siliconix

MOSFET P-CH 12V 1.18A SC89-6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 6V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 236mW (Ta)
  • Rds On (Max) @ Id, Vgs: 156 mOhm @ 1.18A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-89-6
  • Package / Case: SOT-563, SOT-666
パッケージ: SOT-563, SOT-666
在庫108,000
MOSFET (Metal Oxide)
12V
-
1.8V, 4.5V
950mV @ 250µA
10.8nC @ 5V
480pF @ 6V
±8V
-
236mW (Ta)
156 mOhm @ 1.18A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SC-89-6
SOT-563, SOT-666
hot SI4688DY-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 8.9A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1580pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.4W (Ta)
  • Rds On (Max) @ Id, Vgs: 11 mOhm @ 12A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
パッケージ: 8-SOIC (0.154", 3.90mm Width)
在庫453,528
MOSFET (Metal Oxide)
30V
8.9A (Ta)
4.5V, 10V
3V @ 250µA
38nC @ 10V
1580pF @ 15V
±20V
-
1.4W (Ta)
11 mOhm @ 12A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
SI4660DY-T1-GE3
Vishay Siliconix

MOSFET N-CH 25V 23.1A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 23.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 15V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 5.6W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
パッケージ: 8-SOIC (0.154", 3.90mm Width)
在庫7,824
MOSFET (Metal Oxide)
25V
23.1A (Tc)
4.5V, 10V
2.2V @ 250µA
45nC @ 10V
2410pF @ 15V
±16V
-
3.1W (Ta), 5.6W (Tc)
5.8 mOhm @ 15A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
hot SI4448DY-T1-E3
Vishay Siliconix

MOSFET N-CH 12V 50A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 150nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 12350pF @ 6V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 20A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
パッケージ: 8-SOIC (0.154", 3.90mm Width)
在庫60,000
MOSFET (Metal Oxide)
12V
50A (Tc)
1.8V, 4.5V
1V @ 250µA
150nC @ 4.5V
12350pF @ 6V
±8V
-
3.5W (Ta), 7.8W (Tc)
1.7 mOhm @ 20A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
SI4170DY-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 30A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4355pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 6W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
パッケージ: 8-SOIC (0.154", 3.90mm Width)
在庫3,152
MOSFET (Metal Oxide)
30V
30A (Tc)
4.5V, 10V
2.6V @ 250µA
100nC @ 10V
4355pF @ 15V
±20V
-
3W (Ta), 6W (Tc)
3.5 mOhm @ 15A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
SI4110DY-T1-GE3
Vishay Siliconix

MOSFET N-CH 80V 17.3A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 17.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2205pF @ 40V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.6W (Ta), 7.8W (Tc)
  • Rds On (Max) @ Id, Vgs: 13 mOhm @ 11.7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
パッケージ: 8-SOIC (0.154", 3.90mm Width)
在庫5,264
MOSFET (Metal Oxide)
80V
17.3A (Tc)
10V
4V @ 250µA
53nC @ 10V
2205pF @ 40V
±20V
-
3.6W (Ta), 7.8W (Tc)
13 mOhm @ 11.7A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
hot SIS426DN-T1-GE3
Vishay Siliconix

MOSFET N-CH 20V 35A 1212-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? 1212-8
  • Package / Case: PowerPAK? 1212-8
パッケージ: PowerPAK? 1212-8
在庫443,880
MOSFET (Metal Oxide)
20V
35A (Tc)
4.5V, 10V
2.5V @ 250µA
42nC @ 10V
1570pF @ 10V
±20V
-
3.7W (Ta), 52W (Tc)
4.5 mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? 1212-8
PowerPAK? 1212-8
SIR888DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 25V 40A PPAK SO-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5065pF @ 15V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 5W (Ta), 48W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.25 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
パッケージ: PowerPAK? SO-8
在庫2,800
MOSFET (Metal Oxide)
25V
40A (Tc)
4.5V, 10V
2.2V @ 250µA
120nC @ 10V
5065pF @ 15V
±16V
-
5W (Ta), 48W (Tc)
3.25 mOhm @ 15A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8
PowerPAK? SO-8
hot SIR840DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V PPAK SO-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
パッケージ: PowerPAK? SO-8
在庫1,671,948
MOSFET (Metal Oxide)
30V
-
-
-
-
-
-
-
-
-
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8
PowerPAK? SO-8
hot SIR496DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 20V 35A PPAK SO-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 5W (Ta), 27.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
パッケージ: PowerPAK? SO-8
在庫43,200
MOSFET (Metal Oxide)
20V
35A (Tc)
4.5V, 10V
2.5V @ 250µA
42nC @ 10V
1570pF @ 10V
±20V
-
5W (Ta), 27.7W (Tc)
4.5 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8
PowerPAK? SO-8
hot SIB800EDK-T1-GE3
Vishay Siliconix

MOSFET N-CH 20V 1.5A SC75-6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±6V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 1.1W (Ta), 3.1W (Tc)
  • Rds On (Max) @ Id, Vgs: 225 mOhm @ 1.6A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SC-75-6L Single
  • Package / Case: PowerPAK? SC-75-6L
パッケージ: PowerPAK? SC-75-6L
在庫103,200
MOSFET (Metal Oxide)
20V
1.5A (Tc)
1.5V, 4.5V
1V @ 250µA
1.7nC @ 4.5V
-
±6V
Schottky Diode (Isolated)
1.1W (Ta), 3.1W (Tc)
225 mOhm @ 1.6A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SC-75-6L Single
PowerPAK? SC-75-6L
SIB419DK-T1-GE3
Vishay Siliconix

MOSFET P-CH 12V 9A SC75-6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.82nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 562pF @ 6V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 2.45W (Ta), 13.1W (Tc)
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 5.2A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SC-75-6L Single
  • Package / Case: PowerPAK? SC-75-6L
パッケージ: PowerPAK? SC-75-6L
在庫4,816
MOSFET (Metal Oxide)
12V
9A (Tc)
1.8V, 4.5V
1V @ 250µA
11.82nC @ 5V
562pF @ 6V
±8V
-
2.45W (Ta), 13.1W (Tc)
60 mOhm @ 5.2A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SC-75-6L Single
PowerPAK? SC-75-6L
SIB417DK-T1-GE3
Vishay Siliconix

MOSFET P-CH 8V 9A SC75-6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 8V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.75nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 675pF @ 4V
  • Vgs (Max): ±5V
  • FET Feature: -
  • Power Dissipation (Max): 2.4W (Ta), 13W (Tc)
  • Rds On (Max) @ Id, Vgs: 52 mOhm @ 5.6A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SC-75-6L Single
  • Package / Case: PowerPAK? SC-75-6L
パッケージ: PowerPAK? SC-75-6L
在庫3,984
MOSFET (Metal Oxide)
8V
9A (Tc)
1.2V, 4.5V
1V @ 250µA
12.75nC @ 5V
675pF @ 4V
±5V
-
2.4W (Ta), 13W (Tc)
52 mOhm @ 5.6A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SC-75-6L Single
PowerPAK? SC-75-6L