ページ 7 - Vishay Siliconix 製品 - トランジスタ - FET、MOSFET - シングル | Heisener Electronics
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Vishay Siliconix 製品 - トランジスタ - FET、MOSFET - シングル

レコード 4,844
ページ  7/162
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Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SIRA18ADP-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 30.6A PPAK SO-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 30.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
  • Vgs (Max): +20V, -16V
  • FET Feature: -
  • Power Dissipation (Max): 14.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.7mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
パッケージ: -
在庫51,216
MOSFET (Metal Oxide)
30 V
30.6A (Tc)
4.5V, 10V
2.4V @ 250µA
21.5 nC @ 10 V
1000 pF @ 15 V
+20V, -16V
-
14.7W (Tc)
8.7mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
IRF9Z10PBF-BE3
Vishay Siliconix

MOSFET P-CH 60V 6.7A TO220AB

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 43W (Tc)
  • Rds On (Max) @ Id, Vgs: 500mOhm @ 4A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
パッケージ: -
在庫486
MOSFET (Metal Oxide)
60 V
6.7A (Tc)
-
4V @ 250µA
12 nC @ 10 V
270 pF @ 25 V
±20V
-
43W (Tc)
500mOhm @ 4A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
SIHLU024-GE3
Vishay Siliconix

LOGIC MOSFET N-CHANNEL 60V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-251AA
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
パッケージ: -
在庫6,285
MOSFET (Metal Oxide)
60 V
14A (Tc)
4V, 5V
2V @ 250µA
18 nC @ 5 V
870 pF @ 25 V
±10V
-
2.5W (Ta), 42W (Tc)
100mOhm @ 8.4A, 5V
-55°C ~ 150°C (TJ)
Through Hole
TO-251AA
TO-251-3 Short Leads, IPak, TO-251AA
SISA10BDN-T1-GE3
Vishay Siliconix

N-CHANNEL 30-V (D-S) MOSFET POWE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 104A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 36.2 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 15 V
  • Vgs (Max): +20V, -16V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 63W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.6mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® 1212-8
  • Package / Case: PowerPAK® 1212-8
パッケージ: -
在庫28,056
MOSFET (Metal Oxide)
30 V
26A (Ta), 104A (Tc)
4.5V, 10V
2.4V @ 250µA
36.2 nC @ 10 V
1710 pF @ 15 V
+20V, -16V
-
3.8W (Ta), 63W (Tc)
3.6mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
SQ3481EV-T1_GE3
Vishay Siliconix

MOSFET P-CHANNEL 30V 7.5A 6TSOP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 4W (Tc)
  • Rds On (Max) @ Id, Vgs: 43mOhm @ 5.3A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
パッケージ: -
在庫10,569
MOSFET (Metal Oxide)
30 V
7.5A (Tc)
4.5V, 10V
2.5V @ 250µA
23.5 nC @ 10 V
870 pF @ 15 V
±20V
-
4W (Tc)
43mOhm @ 5.3A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
6-TSOP
SOT-23-6 Thin, TSOT-23-6
IRFZ24PBF-BE3
Vishay Siliconix

MOSFET N-CH 60V 17A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
パッケージ: -
在庫534
MOSFET (Metal Oxide)
60 V
17A (Tc)
-
4V @ 250µA
25 nC @ 10 V
640 pF @ 25 V
±20V
-
60W (Tc)
100mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
SQS482EN-T1_BE3
Vishay Siliconix

N-CHANNEL 30-V (D-S) 175C MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1865 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 62W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.5mOhm @ 16.4A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® 1212-8
  • Package / Case: PowerPAK® 1212-8
パッケージ: -
Request a Quote
MOSFET (Metal Oxide)
30 V
16A (Tc)
4.5V, 10V
2.5V @ 250µA
39 nC @ 10 V
1865 pF @ 25 V
±20V
-
62W (Tc)
8.5mOhm @ 16.4A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
SQ4005EY-T1_GE3
Vishay Siliconix

MOSFET P-CHANNEL 12V 15A 8SOIC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12 V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 6 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 6W (Tc)
  • Rds On (Max) @ Id, Vgs: 22mOhm@ 13.5A, 4.5V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOIC
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
パッケージ: -
在庫24,462
MOSFET (Metal Oxide)
12 V
15A (Tc)
2.5V, 4.5V
1V @ 250µA
38 nC @ 4.5 V
3600 pF @ 6 V
±8V
-
6W (Tc)
22mOhm@ 13.5A, 4.5V
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
SQJA84EP-T1_BE3
Vishay Siliconix

N-CHANNEL 80-V (D-S) 175C MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 55W (Tc)
  • Rds On (Max) @ Id, Vgs: 12.5mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8 Dual
  • Package / Case: PowerPAK® SO-8 Dual
パッケージ: -
在庫9,000
MOSFET (Metal Oxide)
80 V
46A (Tc)
4.5V, 10V
2.5V @ 250µA
35 nC @ 10 V
2100 pF @ 25 V
±20V
-
55W (Tc)
12.5mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8 Dual
PowerPAK® SO-8 Dual
SQ3481EV-T1_BE3
Vishay Siliconix

MOSFET P-CHANNEL 30V 7.5A 6TSOP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 4W (Tc)
  • Rds On (Max) @ Id, Vgs: 43mOhm @ 5.3A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
パッケージ: -
Request a Quote
MOSFET (Metal Oxide)
30 V
7.5A (Tc)
4.5V, 10V
2.5V @ 250µA
23.5 nC @ 10 V
870 pF @ 15 V
±20V
-
4W (Tc)
43mOhm @ 5.3A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
6-TSOP
SOT-23-6 Thin, TSOT-23-6
SIS778DN-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 35A PPAK1212-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 42.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: Schottky Diode (Body)
  • Power Dissipation (Max): 52W (Tc)
  • Rds On (Max) @ Id, Vgs: 5mOhm @ 10A, 10V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® 1212-8
  • Package / Case: PowerPAK® 1212-8
パッケージ: -
Request a Quote
MOSFET (Metal Oxide)
30 V
35A (Tc)
4.5V, 10V
2.2V @ 250µA
42.5 nC @ 10 V
1390 pF @ 15 V
±20V
Schottky Diode (Body)
52W (Tc)
5mOhm @ 10A, 10V
-50°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
SIHFR220TRL-GE3
Vishay Siliconix

MOSFET N-CH 200V 4.8A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 800mOhm @ 2.9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
パッケージ: -
Request a Quote
MOSFET (Metal Oxide)
200 V
4.8A (Tc)
10V
4V @ 250µA
14 nC @ 10 V
260 pF @ 25 V
±20V
-
2.5W (Ta), 42W (Tc)
800mOhm @ 2.9A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
IRFR220PBF-BE3
Vishay Siliconix

N-CHANNEL 200V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 800mOhm @ 2.9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
パッケージ: -
Request a Quote
MOSFET (Metal Oxide)
200 V
4.8A (Tc)
10V
4V @ 250µA
14 nC @ 10 V
260 pF @ 25 V
±20V
-
2.5W (Ta), 42W (Tc)
800mOhm @ 2.9A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
SQP25N15-52_GE3
Vishay Siliconix

MOSFET N-CH 150V 25A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 107W (Tc)
  • Rds On (Max) @ Id, Vgs: 52mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
パッケージ: -
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MOSFET (Metal Oxide)
150 V
25A (Tc)
10V
4V @ 250µA
60 nC @ 10 V
2360 pF @ 25 V
±20V
-
107W (Tc)
52mOhm @ 15A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
SI2316BDS-T1-BE3
Vishay Siliconix

N-CHANNEL 30-V (D-S) MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta), 4.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.25W (Ta), 1.66W (Tc)
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 3.9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
パッケージ: -
在庫32,670
MOSFET (Metal Oxide)
30 V
3.9A (Ta), 4.5A (Tc)
4.5V, 10V
3V @ 250µA
9.6 nC @ 10 V
350 pF @ 15 V
±20V
-
1.25W (Ta), 1.66W (Tc)
50mOhm @ 3.9A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
SQJ488EP-T1_BE3
Vishay Siliconix

MOSFET N-CH 100V 42A PPAK SO-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 978 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 21mOhm @ 7.1A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
パッケージ: -
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MOSFET (Metal Oxide)
100 V
42A (Tc)
4.5V, 10V
2.5V @ 250µA
27 nC @ 10 V
978 pF @ 50 V
±20V
-
83W (Tc)
21mOhm @ 7.1A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
SIHP6N80E-BE3
Vishay Siliconix

N-CHANNEL 800V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 827 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 78W (Tc)
  • Rds On (Max) @ Id, Vgs: 940mOhm @ 3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
パッケージ: -
在庫1,500
MOSFET (Metal Oxide)
800 V
5.4A (Tc)
10V
4V @ 250µA
44 nC @ 10 V
827 pF @ 100 V
±30V
-
78W (Tc)
940mOhm @ 3A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
SIRA60DP-T1-RE3
Vishay Siliconix

MOSFET N-CH 30V 100A PPAK SO-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7650 pF @ 15 V
  • Vgs (Max): +20V, -16V
  • FET Feature: -
  • Power Dissipation (Max): 57W (Tc)
  • Rds On (Max) @ Id, Vgs: 0.94mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
パッケージ: -
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MOSFET (Metal Oxide)
30 V
100A (Tc)
4.5V, 10V
2.2V @ 250µA
125 nC @ 10 V
7650 pF @ 15 V
+20V, -16V
-
57W (Tc)
0.94mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
SQA407CEJW-T1_GE3
Vishay Siliconix

AUTOMOTIVE P-CHANNEL 20 V (D-S)

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 10 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 13.6W (Tc)
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 4.5A, 4.5V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerPAK®SC-70W-6
  • Package / Case: PowerPAK® SC-70-6
パッケージ: -
在庫17,670
MOSFET (Metal Oxide)
20 V
9A (Tc)
2.5V, 4.5V
1.3V @ 250µA
24 nC @ 4.5 V
2100 pF @ 10 V
±12V
-
13.6W (Tc)
25mOhm @ 4.5A, 4.5V
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
PowerPAK®SC-70W-6
PowerPAK® SC-70-6
SQ4005EY-T1_BE3
Vishay Siliconix

MOSFET P-CHANNEL 12V 15A 8SOIC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12 V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 6 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 6W (Tc)
  • Rds On (Max) @ Id, Vgs: 22mOhm @ 13.5A, 4.5V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOIC
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
パッケージ: -
在庫4,350
MOSFET (Metal Oxide)
12 V
15A (Tc)
2.5V, 4.5V
1V @ 250µA
38 nC @ 4.5 V
3600 pF @ 6 V
±8V
-
6W (Tc)
22mOhm @ 13.5A, 4.5V
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
SUP70042E-GE3
Vishay Siliconix

N-CHANNEL 100 V (D-S) MOSFET TO-

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6490 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 278W (Tc)
  • Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
パッケージ: -
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MOSFET (Metal Oxide)
100 V
150A (Tc)
7.5V, 10V
4V @ 250µA
110 nC @ 10 V
6490 pF @ 50 V
±20V
-
278W (Tc)
4mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
SQJ180EP-T1_GE3
Vishay Siliconix

AUTOMOTIVE N-CHANNEL 80 V (D-S)

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 248A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6645 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 500W (Tc)
  • Rds On (Max) @ Id, Vgs: 3mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
パッケージ: -
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MOSFET (Metal Oxide)
80 V
248A (Tc)
10V
3.5V @ 250µA
117 nC @ 10 V
6645 pF @ 25 V
±20V
-
500W (Tc)
3mOhm @ 15A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
IRFR120TRLPBF-BE3
Vishay Siliconix

MOSFET N-CH 100V 7.7A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
パッケージ: -
在庫8,940
MOSFET (Metal Oxide)
100 V
7.7A (Tc)
-
4V @ 250µA
16 nC @ 10 V
360 pF @ 25 V
±20V
-
2.5W (Ta), 42W (Tc)
270mOhm @ 4.6A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
SQS181ELNW-T1_GE3
Vishay Siliconix

AUTOMOTIVE P-CHANNEL 80 V (D-S)

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2771 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 119W (Tc)
  • Rds On (Max) @ Id, Vgs: 31mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerPAK® 1212-8SLW
  • Package / Case: PowerPAK® 1212-8SLW
パッケージ: -
在庫6,924
MOSFET (Metal Oxide)
80 V
44A (Tc)
4.5V, 10V
2.5V @ 250µA
45 nC @ 10 V
2771 pF @ 25 V
±20V
-
119W (Tc)
31mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
PowerPAK® 1212-8SLW
PowerPAK® 1212-8SLW
SI2369DS-T1-BE3
Vishay Siliconix

P-CHANNEL 30-V (D-S) MOSFET

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 7.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1295 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 29mOhm @ 5.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
パッケージ: -
在庫35,802
MOSFET (Metal Oxide)
30 V
5.4A (Ta), 7.6A (Tc)
4.5V, 10V
2.5V @ 250µA
36 nC @ 10 V
1295 pF @ 15 V
±20V
-
1.25W (Ta), 2.5W (Tc)
29mOhm @ 5.4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
SQD50N04-4M5L_GE3
Vishay Siliconix

MOSFET N-CH 40V 50A TO252AA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5860 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 136W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
パッケージ: -
Request a Quote
MOSFET (Metal Oxide)
40 V
50A (Tc)
4.5V, 10V
2.5V @ 250µA
130 nC @ 10 V
5860 pF @ 25 V
±20V
-
136W (Tc)
3.5mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
SQM50P06-15L_GE3
Vishay Siliconix

MOSFET P-CHANNEL 60V 50A TO263

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6120 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 15mOhm @ 17A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2PAK)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
パッケージ: -
在庫2,745
MOSFET (Metal Oxide)
60 V
50A (Tc)
4.5V, 10V
2.5V @ 250µA
155 nC @ 10 V
6120 pF @ 25 V
±20V
-
150W (Tc)
15mOhm @ 17A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SIHP6N80E-GE3
Vishay Siliconix

MOSFET N-CH 800V 5.4A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 827 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 78W (Tc)
  • Rds On (Max) @ Id, Vgs: 940mOhm @ 3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
パッケージ: -
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MOSFET (Metal Oxide)
800 V
5.4A (Tc)
10V
4V @ 250µA
44 nC @ 10 V
827 pF @ 100 V
±30V
-
78W (Tc)
940mOhm @ 3A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
SI2301CDS-T1-BE3
Vishay Siliconix

P-CHANNEL 20-V (D-S) MOSFET

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta), 3.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 860mW (Ta), 1.6W (Tc)
  • Rds On (Max) @ Id, Vgs: 112mOhm @ 2.8A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
パッケージ: -
在庫28,479
MOSFET (Metal Oxide)
20 V
2.3A (Ta), 3.1A (Tc)
2.5V, 4.5V
1V @ 250µA
10 nC @ 4.5 V
405 pF @ 10 V
±8V
-
860mW (Ta), 1.6W (Tc)
112mOhm @ 2.8A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
IRLZ34PBF-BE3
Vishay Siliconix

MOSFET N-CH 60V 30A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 88W (Tc)
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 18A, 5V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
パッケージ: -
在庫9,762
MOSFET (Metal Oxide)
60 V
30A (Tc)
-
2V @ 250µA
35 nC @ 5 V
1600 pF @ 25 V
±10V
-
88W (Tc)
50mOhm @ 18A, 5V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3