ページ 10 - Vishay Siliconix 製品

部品番号	メーカ	説明	パッケージ	在庫
SI4493DY-T1-GE3	Vishay Siliconix	MOSFET P-CH 20V 10A 8SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 7.75 mOhm @ 14A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫6,240
IRF710L	Vishay Siliconix	MOSFET N-CH 400V 2A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 1.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	パッケージ: TO-262-3 Long Leads, I2Pak, TO-262AA	在庫5,040
IRFI830G	Vishay Siliconix	MOSFET N-CH 500V 3.1A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	パッケージ: TO-220-3 Full Pack, Isolated Tab	在庫220,440
SUD50N04-09H-E3	Vishay Siliconix	MOSFET N-CH 40V 50A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83.3W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63	在庫7,424
SI7104DN-T1-E3	Vishay Siliconix	MOSFET N-CH 12V 35A PPAK 1212-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 6V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 26.1A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	パッケージ: PowerPAK? 1212-8	在庫4,480
SIHP065N60E-GE3	Vishay Siliconix	MOSFET N-CH 600V 40A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 65 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	パッケージ: TO-220-3	在庫6,224
IRFRC20TRLPBF	Vishay Siliconix	MOSFET N-CH 600V 2A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 1.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63	在庫5,744
SIHP24N65E-E3	Vishay Siliconix	MOSFET N-CH 650V 24A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 122nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2740pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 145 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	パッケージ: TO-220-3	在庫23,016
SIHH14N65E-T1-GE3	Vishay Siliconix	MOSFET N-CH 650V 15A PWRPAK 8X8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1712pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 156W (Tc) Rds On (Max) @ Id, Vgs: 260 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 8 x 8 Package / Case: 8-PowerTDFN	パッケージ: 8-PowerTDFN	在庫28,260
SI4850EY-T1-GE3	Vishay Siliconix	MOSFET N-CH 60V 6A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.7W (Ta) Rds On (Max) @ Id, Vgs: 22 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫14,820
SI1031R-T1-GE3	Vishay Siliconix	MOSFET P-CH 20V 0.14A SC-75A FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 140mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±6V FET Feature: - Power Dissipation (Max): 250mW (Ta) Rds On (Max) @ Id, Vgs: 8 Ohm @ 150mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-75A Package / Case: SC-75A	パッケージ: SC-75A	在庫545,088
SI3905DV-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 8V 6-TSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 125 mOhm @ 2.5A, 4.5V Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.15W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP	パッケージ: SOT-23-6 Thin, TSOT-23-6	在庫156,012
SIA913ADJ-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 12V 4.5A SC70-6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 61 mOhm @ 3.6A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 6V Power - Max: 6.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SC-70-6 Dual Supplier Device Package: PowerPAK? SC-70-6 Dual	パッケージ: PowerPAK? SC-70-6 Dual	在庫3,192,612
SI9113DY-E3	Vishay Siliconix	IC CONTROLLER PWM/LDO 14SOIC Applications: Controller, ISDN Power Supplies Voltage - Input: 23.5 V ~ 200 V Number of Outputs: 1 Voltage - Output: Adj to 1.3V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 14-SOIC (0.154", 3.90mm Width) Supplier Device Package: 14-SOIC	パッケージ: 14-SOIC (0.154", 3.90mm Width)	在庫4,240
SIP21106DT-46-E3	Vishay Siliconix	IC REG LIN 4.6V 150MA TSOT23-5 Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 6V Voltage - Output (Min/Fixed): 4.6V Voltage - Output (Max): - Voltage Dropout (Max): 0.22V @ 150mA Current - Output: 150mA Current - Quiescent (Iq): - Current - Supply (Max): 85µA PSRR: 75dB ~ 40dB (1kHz ~ 100kHz) Control Features: Enable Protection Features: Over Temperature, Short Circuit Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: SOT-23-5 Thin, TSOT-23-5 Supplier Device Package: TSOT-23-5	パッケージ: SOT-23-5 Thin, TSOT-23-5	在庫3,168
SI91872DMP-25-E3	Vishay Siliconix	IC REG LIN 2.5V POWERPAKMLP33-5 Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 6V Voltage - Output (Min/Fixed): 2.5V Voltage - Output (Max): - Voltage Dropout (Max): 0.57V @ 300mA Current - Output: 300mA Current - Quiescent (Iq): - Current - Supply (Max): 170µA ~ 330µA PSRR: 60dB ~ 30dB (1kHz ~ 100kHz) Control Features: Enable Protection Features: Over Temperature, Reverse Polarity, Short Circuit Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: PowerPAK? MLP33-5 Supplier Device Package: PowerPAK? MLP33-5	パッケージ: PowerPAK? MLP33-5	在庫7,056
DG9431DV-T1	Vishay Siliconix	IC ANALOG SWITCH SPDT LV 6TSOP Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Number of Circuits: 1 On-State Resistance (Max): 30 Ohm Channel-to-Channel Matching (ΔRon): 400 mOhm Voltage - Supply, Single (V+): 2.7 V ~ 5 V Voltage - Supply, Dual (V±): - Switch Time (Ton, Toff) (Max): 75ns, 50ns -3db Bandwidth: - Charge Injection: 2pC Channel Capacitance (CS(off), CD(off)): 7pF Current - Leakage (IS(off)) (Max): 100pA Crosstalk: - Operating Temperature: -40°C ~ 85°C (TA) Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP	パッケージ: SOT-23-6 Thin, TSOT-23-6	在庫47,520
DG304BDJ	Vishay Siliconix	IC SWITCH CMOS 14DIP Switch Circuit: SPST - NO Multiplexer/Demultiplexer Circuit: 1:1 Number of Circuits: 2 On-State Resistance (Max): 50 Ohm Channel-to-Channel Matching (ΔRon): - Voltage - Supply, Single (V+): - Voltage - Supply, Dual (V±): ±15V Switch Time (Ton, Toff) (Max): 110ns, 70ns (Typ) -3db Bandwidth: - Charge Injection: 30pC Channel Capacitance (CS(off), CD(off)): 14pF, 14pF Current - Leakage (IS(off)) (Max): 5nA Crosstalk: -74dB @ 500kHz Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 14-DIP (0.300", 7.62mm) Supplier Device Package: 14-PDIP	パッケージ: 14-DIP (0.300", 7.62mm)	在庫4,288
DG9233DQ-T1-E3	Vishay Siliconix	IC SWITCH DUAL SPST 8MSOP Switch Circuit: SPST - NO Multiplexer/Demultiplexer Circuit: 1:1 Number of Circuits: 2 On-State Resistance (Max): 30 Ohm Channel-to-Channel Matching (ΔRon): 400 mOhm Voltage - Supply, Single (V+): 2.7 V ~ 12 V Voltage - Supply, Dual (V±): - Switch Time (Ton, Toff) (Max): 75ns, 50ns -3db Bandwidth: - Charge Injection: 2pC Channel Capacitance (CS(off), CD(off)): 7pF, 13pF Current - Leakage (IS(off)) (Max): 100pA Crosstalk: -90dB @ 1MHz Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: 8-MSOP	パッケージ: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	在庫59,988
DG413LDY-T1-E3	Vishay Siliconix	IC SWITCH QUAD SPST LV 16-SOIC Switch Circuit: SPST - NO/NC Multiplexer/Demultiplexer Circuit: 1:1 Number of Circuits: 4 On-State Resistance (Max): 17 Ohm Channel-to-Channel Matching (ΔRon): - Voltage - Supply, Single (V+): 2.7 V ~ 12 V Voltage - Supply, Dual (V±): ±3 V ~ 6 V Switch Time (Ton, Toff) (Max): 19ns, 12ns -3db Bandwidth: 280MHz Charge Injection: 5pC Channel Capacitance (CS(off), CD(off)): 5pF, 6pF Current - Leakage (IS(off)) (Max): 250pA Crosstalk: -95dB @ 1MHz Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	パッケージ: 16-SOIC (0.154", 3.90mm Width)	在庫6,256
DG2001DV-T1-E3	Vishay Siliconix	IC ANLG SWITCH SPDT LV 6TSOP Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Number of Circuits: 1 On-State Resistance (Max): 7 Ohm Channel-to-Channel Matching (ΔRon): - Voltage - Supply, Single (V+): 1.8 V ~ 5.5 V Voltage - Supply, Dual (V±): - Switch Time (Ton, Toff) (Max): 20ns, 10ns -3db Bandwidth: - Charge Injection: 7pC Channel Capacitance (CS(off), CD(off)): 17pF Current - Leakage (IS(off)) (Max): 900pA Crosstalk: -70dB @ 1MHz Operating Temperature: -40°C ~ 85°C (TA) Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP	パッケージ: SOT-23-6 Thin, TSOT-23-6	在庫4,576
DG2737DN-T1-E4	Vishay Siliconix	IC SWITCH 2XSPST 8 OHM 8MINIQFN Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Number of Circuits: 1 On-State Resistance (Max): 8 Ohm Channel-to-Channel Matching (ΔRon): 100 mOhm Voltage - Supply, Single (V+): 2.3 V ~ 4.3 V Voltage - Supply, Dual (V±): - Switch Time (Ton, Toff) (Max): 60ns, 50ns -3db Bandwidth: 720MHz Charge Injection: 10.4pC Channel Capacitance (CS(off), CD(off)): 4.4pF, 3.8pF Current - Leakage (IS(off)) (Max): 10nA Crosstalk: -109dB @ 1MHz Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 8-UFQFN Supplier Device Package: 8-miniQFN (1.4x1.4)	パッケージ: 8-UFQFN	在庫3,248
DG412DY-T1-E3	Vishay Siliconix	IC SWITCH QUAD SPST 16-SOIC Switch Circuit: SPST - NO Multiplexer/Demultiplexer Circuit: 1:1 Number of Circuits: 4 On-State Resistance (Max): 35 Ohm Channel-to-Channel Matching (ΔRon): - Voltage - Supply, Single (V+): 5 V ~ 44 V Voltage - Supply, Dual (V±): ±5 V ~ 20 V Switch Time (Ton, Toff) (Max): 175ns, 145ns -3db Bandwidth: - Charge Injection: 5pC Channel Capacitance (CS(off), CD(off)): 9pF, 9pF Current - Leakage (IS(off)) (Max): 250pA Crosstalk: -85dB @ 1MHz Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	パッケージ: 16-SOIC (0.154", 3.90mm Width)	在庫289,020
DG411LEDQ-T1-GE3	Vishay Siliconix	IC SWITCH QUAD SPST 16-TSSOP Switch Circuit: SPST - NC Multiplexer/Demultiplexer Circuit: 1:1 Number of Circuits: 4 On-State Resistance (Max): 26 Ohm Channel-to-Channel Matching (ΔRon): - Voltage - Supply, Single (V+): 3 V ~ 16 V Voltage - Supply, Dual (V±): ±3 V ~ 8 V Switch Time (Ton, Toff) (Max): 50ns, 30ns -3db Bandwidth: - Charge Injection: 6.6pC Channel Capacitance (CS(off), CD(off)): 5pF, 6pF Current - Leakage (IS(off)) (Max): 1nA Crosstalk: -114dB @ 1MHz Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 16-TSSOP	パッケージ: 16-TSSOP (0.173", 4.40mm Width)	在庫6,032
SQJ500AEP-T1_BE3	Vishay Siliconix	MOSFET N/P-CH 40V 30A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 9.2mOhm @ 9.8A, 10V, 27mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA, 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38.3nC @ 10V, 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1843pF @ 20V, 1628pF @ 20V Power - Max: 48W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8	パッケージ: -	在庫17,814
SIA456DJ-T3-GE3	Vishay Siliconix	MOSFET N-CH 200V 1.1A/2.6A PPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 2.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 100 V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.5W (Ta), 19W (Tc) Rds On (Max) @ Id, Vgs: 1.38Ohm @ 750mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SC-70-6 Package / Case: PowerPAK® SC-70-6	パッケージ: -	Request a Quote
SQS462EN-T1_BE3	Vishay Siliconix	N-CHANNEL 60-V (D-S) 175C MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 33W (Tc) Rds On (Max) @ Id, Vgs: 63mOhm @ 4.3A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8 Package / Case: PowerPAK® 1212-8	パッケージ: -	在庫45,180
SIHD14N60ET1-GE3	Vishay Siliconix	N-CHANNEL 600V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 147W (Tc) Rds On (Max) @ Id, Vgs: 309mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	パッケージ: -	在庫4,932
SIHP35N60EF-GE3	Vishay Siliconix	MOSFET N-CH 600V 32A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2568 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 97mOhm @ 17A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	パッケージ: -	在庫2,850
SQJ868EP-T1_GE3	Vishay Siliconix	MOSFET N-CH 40V 58A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 7.35mOhm @ 14A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	パッケージ: -	Request a Quote

SI4493DY-T1-GE3

Vishay Siliconix

MOSFET P-CH 20V 10A 8SOIC

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±12V
FET Feature: -
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 7.75 mOhm @ 14A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫6,240

IRF710L

Vishay Siliconix

MOSFET N-CH 400V 2A TO-262

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 400V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 1.2A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: I2PAK
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

パッケージ: TO-262-3 Long Leads, I2Pak, TO-262AA

在庫5,040

IRFI830G

Vishay Siliconix

MOSFET N-CH 500V 3.1A TO220FP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.9A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220-3
Package / Case: TO-220-3 Full Pack, Isolated Tab

パッケージ: TO-220-3 Full Pack, Isolated Tab

在庫220,440

SUD50N04-09H-E3

Vishay Siliconix

MOSFET N-CH 40V 50A TO252

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 83.3W (Tc)
Rds On (Max) @ Id, Vgs: 9 mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252, (D-Pak)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

在庫7,424

SI7104DN-T1-E3

Vishay Siliconix

MOSFET N-CH 12V 35A PPAK 1212-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 6V
Vgs (Max): ±12V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 26.1A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK? 1212-8
Package / Case: PowerPAK? 1212-8

パッケージ: PowerPAK? 1212-8

在庫4,480

SIHP065N60E-GE3

Vishay Siliconix

MOSFET N-CH 600V 40A TO220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 100V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 65 mOhm @ 16A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

パッケージ: TO-220-3

在庫6,224

IRFRC20TRLPBF

Vishay Siliconix

MOSFET N-CH 600V 2A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 1.2A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

在庫5,744

SIHP24N65E-E3

Vishay Siliconix

MOSFET N-CH 650V 24A TO220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 122nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2740pF @ 100V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 145 mOhm @ 12A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

パッケージ: TO-220-3

在庫23,016

SIHH14N65E-T1-GE3

Vishay Siliconix

MOSFET N-CH 650V 15A PWRPAK 8X8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1712pF @ 100V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 260 mOhm @ 7A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK? 8 x 8
Package / Case: 8-PowerTDFN

パッケージ: 8-PowerTDFN

在庫28,260

SI4850EY-T1-GE3

Vishay Siliconix

MOSFET N-CH 60V 6A 8-SOIC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.7W (Ta)
Rds On (Max) @ Id, Vgs: 22 mOhm @ 6A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫14,820

SI1031R-T1-GE3

Vishay Siliconix

MOSFET P-CH 20V 0.14A SC-75A

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 140mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±6V
FET Feature: -
Power Dissipation (Max): 250mW (Ta)
Rds On (Max) @ Id, Vgs: 8 Ohm @ 150mA, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-75A
Package / Case: SC-75A

パッケージ: SC-75A

在庫545,088

SI3905DV-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 8V 6-TSOP

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 125 mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.15W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP

パッケージ: SOT-23-6 Thin, TSOT-23-6

在庫156,012

SIA913ADJ-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 12V 4.5A SC70-6

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 61 mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 6V
Power - Max: 6.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SC-70-6 Dual
Supplier Device Package: PowerPAK? SC-70-6 Dual

パッケージ: PowerPAK? SC-70-6 Dual

在庫3,192,612

SI9113DY-E3

Vishay Siliconix

IC CONTROLLER PWM/LDO 14SOIC

Applications: Controller, ISDN Power Supplies
Voltage - Input: 23.5 V ~ 200 V
Number of Outputs: 1
Voltage - Output: Adj to 1.3V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 14-SOIC

パッケージ: 14-SOIC (0.154", 3.90mm Width)

在庫4,240

SIP21106DT-46-E3

Vishay Siliconix

IC REG LIN 4.6V 150MA TSOT23-5

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 6V
Voltage - Output (Min/Fixed): 4.6V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.22V @ 150mA
Current - Output: 150mA
Current - Quiescent (Iq): -
Current - Supply (Max): 85µA
PSRR: 75dB ~ 40dB (1kHz ~ 100kHz)
Control Features: Enable
Protection Features: Over Temperature, Short Circuit
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: SOT-23-5 Thin, TSOT-23-5
Supplier Device Package: TSOT-23-5

パッケージ: SOT-23-5 Thin, TSOT-23-5

在庫3,168

SI91872DMP-25-E3

Vishay Siliconix

IC REG LIN 2.5V POWERPAKMLP33-5

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 6V
Voltage - Output (Min/Fixed): 2.5V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.57V @ 300mA
Current - Output: 300mA
Current - Quiescent (Iq): -
Current - Supply (Max): 170µA ~ 330µA
PSRR: 60dB ~ 30dB (1kHz ~ 100kHz)
Control Features: Enable
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: PowerPAK? MLP33-5
Supplier Device Package: PowerPAK? MLP33-5

パッケージ: PowerPAK? MLP33-5

在庫7,056

DG9431DV-T1

Vishay Siliconix

IC ANALOG SWITCH SPDT LV 6TSOP

Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Circuits: 1
On-State Resistance (Max): 30 Ohm
Channel-to-Channel Matching (ΔRon): 400 mOhm
Voltage - Supply, Single (V+): 2.7 V ~ 5 V
Voltage - Supply, Dual (V±): -
Switch Time (Ton, Toff) (Max): 75ns, 50ns
-3db Bandwidth: -
Charge Injection: 2pC
Channel Capacitance (CS(off), CD(off)): 7pF
Current - Leakage (IS(off)) (Max): 100pA
Crosstalk: -
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP

パッケージ: SOT-23-6 Thin, TSOT-23-6

在庫47,520

DG304BDJ

Vishay Siliconix

IC SWITCH CMOS 14DIP

Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 2
On-State Resistance (Max): 50 Ohm
Channel-to-Channel Matching (ΔRon): -
Voltage - Supply, Single (V+): -
Voltage - Supply, Dual (V±): ±15V
Switch Time (Ton, Toff) (Max): 110ns, 70ns (Typ)
-3db Bandwidth: -
Charge Injection: 30pC
Channel Capacitance (CS(off), CD(off)): 14pF, 14pF
Current - Leakage (IS(off)) (Max): 5nA
Crosstalk: -74dB @ 500kHz
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 14-DIP (0.300", 7.62mm)
Supplier Device Package: 14-PDIP

パッケージ: 14-DIP (0.300", 7.62mm)

在庫4,288

DG9233DQ-T1-E3

Vishay Siliconix

IC SWITCH DUAL SPST 8MSOP

Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 2
On-State Resistance (Max): 30 Ohm
Channel-to-Channel Matching (ΔRon): 400 mOhm
Voltage - Supply, Single (V+): 2.7 V ~ 12 V
Voltage - Supply, Dual (V±): -
Switch Time (Ton, Toff) (Max): 75ns, 50ns
-3db Bandwidth: -
Charge Injection: 2pC
Channel Capacitance (CS(off), CD(off)): 7pF, 13pF
Current - Leakage (IS(off)) (Max): 100pA
Crosstalk: -90dB @ 1MHz
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: 8-MSOP

パッケージ: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

在庫59,988

DG413LDY-T1-E3

Vishay Siliconix

IC SWITCH QUAD SPST LV 16-SOIC

Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 4
On-State Resistance (Max): 17 Ohm
Channel-to-Channel Matching (ΔRon): -
Voltage - Supply, Single (V+): 2.7 V ~ 12 V
Voltage - Supply, Dual (V±): ±3 V ~ 6 V
Switch Time (Ton, Toff) (Max): 19ns, 12ns
-3db Bandwidth: 280MHz
Charge Injection: 5pC
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 250pA
Crosstalk: -95dB @ 1MHz
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC

パッケージ: 16-SOIC (0.154", 3.90mm Width)

在庫6,256

DG2001DV-T1-E3

Vishay Siliconix

IC ANLG SWITCH SPDT LV 6TSOP

Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Circuits: 1
On-State Resistance (Max): 7 Ohm
Channel-to-Channel Matching (ΔRon): -
Voltage - Supply, Single (V+): 1.8 V ~ 5.5 V
Voltage - Supply, Dual (V±): -
Switch Time (Ton, Toff) (Max): 20ns, 10ns
-3db Bandwidth: -
Charge Injection: 7pC
Channel Capacitance (CS(off), CD(off)): 17pF
Current - Leakage (IS(off)) (Max): 900pA
Crosstalk: -70dB @ 1MHz
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP

パッケージ: SOT-23-6 Thin, TSOT-23-6

在庫4,576

DG2737DN-T1-E4

Vishay Siliconix

IC SWITCH 2XSPST 8 OHM 8MINIQFN

Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Circuits: 1
On-State Resistance (Max): 8 Ohm
Channel-to-Channel Matching (ΔRon): 100 mOhm
Voltage - Supply, Single (V+): 2.3 V ~ 4.3 V
Voltage - Supply, Dual (V±): -
Switch Time (Ton, Toff) (Max): 60ns, 50ns
-3db Bandwidth: 720MHz
Charge Injection: 10.4pC
Channel Capacitance (CS(off), CD(off)): 4.4pF, 3.8pF
Current - Leakage (IS(off)) (Max): 10nA
Crosstalk: -109dB @ 1MHz
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 8-UFQFN
Supplier Device Package: 8-miniQFN (1.4x1.4)

パッケージ: 8-UFQFN

在庫3,248

DG412DY-T1-E3

Vishay Siliconix

IC SWITCH QUAD SPST 16-SOIC

Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 4
On-State Resistance (Max): 35 Ohm
Channel-to-Channel Matching (ΔRon): -
Voltage - Supply, Single (V+): 5 V ~ 44 V
Voltage - Supply, Dual (V±): ±5 V ~ 20 V
Switch Time (Ton, Toff) (Max): 175ns, 145ns
-3db Bandwidth: -
Charge Injection: 5pC
Channel Capacitance (CS(off), CD(off)): 9pF, 9pF
Current - Leakage (IS(off)) (Max): 250pA
Crosstalk: -85dB @ 1MHz
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC

パッケージ: 16-SOIC (0.154", 3.90mm Width)

在庫289,020

DG411LEDQ-T1-GE3

Vishay Siliconix

IC SWITCH QUAD SPST 16-TSSOP

Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 4
On-State Resistance (Max): 26 Ohm
Channel-to-Channel Matching (ΔRon): -
Voltage - Supply, Single (V+): 3 V ~ 16 V
Voltage - Supply, Dual (V±): ±3 V ~ 8 V
Switch Time (Ton, Toff) (Max): 50ns, 30ns
-3db Bandwidth: -
Charge Injection: 6.6pC
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 1nA
Crosstalk: -114dB @ 1MHz
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 16-TSSOP

パッケージ: 16-TSSOP (0.173", 4.40mm Width)

在庫6,032

SQJ500AEP-T1_BE3

Vishay Siliconix

MOSFET N/P-CH 40V 30A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 9.8A, 10V, 27mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA, 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 38.3nC @ 10V, 45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1843pF @ 20V, 1628pF @ 20V
Power - Max: 48W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8

パッケージ: -

在庫17,814

SIA456DJ-T3-GE3

Vishay Siliconix

MOSFET N-CH 200V 1.1A/2.6A PPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 2.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 100 V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Rds On (Max) @ Id, Vgs: 1.38Ohm @ 750mA, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SC-70-6
Package / Case: PowerPAK® SC-70-6

パッケージ: -

Request a Quote

SQS462EN-T1_BE3

Vishay Siliconix

N-CHANNEL 60-V (D-S) 175C MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 33W (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 4.3A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8

パッケージ: -

在庫45,180

SIHD14N60ET1-GE3

Vishay Siliconix

N-CHANNEL 600V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 100 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 147W (Tc)
Rds On (Max) @ Id, Vgs: 309mOhm @ 7A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

パッケージ: -

在庫4,932

SIHP35N60EF-GE3

Vishay Siliconix

MOSFET N-CH 600V 32A TO220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2568 pF @ 100 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 97mOhm @ 17A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

パッケージ: -

在庫2,850

SQJ868EP-T1_GE3

Vishay Siliconix

MOSFET N-CH 40V 58A PPAK SO-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 48W (Tc)
Rds On (Max) @ Id, Vgs: 7.35mOhm @ 14A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8

パッケージ: -

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