|
|
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 11A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 43A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 30W (Tc)
- Rds On (Max) @ Id, Vgs: 10 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN (5x6)
- Package / Case: 8-PowerSMD, Flat Leads
|
パッケージ: 8-PowerSMD, Flat Leads |
在庫5,520 |
|
|
|
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2065pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 8.3W (Ta), 36.5W (Tc)
- Rds On (Max) @ Id, Vgs: 90 mOhm @ 13A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3F
- Package / Case: TO-220-3 Full Pack
|
パッケージ: TO-220-3 Full Pack |
在庫23,208 |
|
|
|
Alpha & Omega Semiconductor Inc. |
MOSFET P-CH 30V 38A 8ULTRASO
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 15V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 38W (Tc)
- Rds On (Max) @ Id, Vgs: 17 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: UltraSO-8?
- Package / Case: 3-PowerSMD, Flat Leads
|
パッケージ: 3-PowerSMD, Flat Leads |
在庫248,628 |
|
|
|
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 19A TO-252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 4.2W (Ta), 21W (Tc)
- Rds On (Max) @ Id, Vgs: 37 mOhm @ 12A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252, (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63 |
在庫206,040 |
|
|
|
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 100V 13A TO262
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.9V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3430pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 267W (Tc)
- Rds On (Max) @ Id, Vgs: 7 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
|
パッケージ: TO-262-3 Long Leads, I2Pak, TO-262AA |
在庫5,888 |
|
|
|
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 1000V 4A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 195W (Tc)
- Rds On (Max) @ Id, Vgs: 4.2 Ohm @ 2.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
|
パッケージ: TO-220-3 |
在庫21,240 |
|
|
|
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 84A (Ta), 200A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 325nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 11500pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 7.3W (Ta), 208W (Tc)
- Rds On (Max) @ Id, Vgs: 680 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN (5x6)
- Package / Case: 8-PowerSMD, Flat Leads
|
パッケージ: 8-PowerSMD, Flat Leads |
在庫7,968 |
|
|
|
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 15A 8DFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 605pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 20W (Tc)
- Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 16A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN (3x3)
- Package / Case: 8-PowerSMD, Flat Leads
|
パッケージ: 8-PowerSMD, Flat Leads |
在庫177,516 |
|
|
|
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 60V 38A TO-252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 37A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 60W (Tc)
- Rds On (Max) @ Id, Vgs: 20 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252, (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63 |
在庫365,556 |
|
|
|
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 20A 8-SO
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1128pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta)
- Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
|
パッケージ: 8-SOIC (0.154", 3.90mm Width) |
在庫33,600 |
|
|
|
Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 20V 7A DFN2X2
- FET Type: 2 N-Channel (Dual) Common Drain
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 7A
- Rds On (Max) @ Id, Vgs: 21.5 mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-WFDFN Exposed Pad
- Supplier Device Package: 8-DFN-EP (2x2)
|
パッケージ: 8-WFDFN Exposed Pad |
在庫7,104 |
|
|
|
Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 75V 2.3A 8SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 2.3A
- Rds On (Max) @ Id, Vgs: 130 mOhm @ 3.1A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 30V
- Power - Max: 1.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
|
パッケージ: 8-SOIC (0.154", 3.90mm Width) |
在庫406,548 |
|
|
|
Alpha & Omega Semiconductor Inc. |
IC ANLG SWITCH DUAL SPDT 10QFN
- Switch Circuit: SPDT
- Multiplexer/Demultiplexer Circuit: 2:1
- Number of Circuits: 2
- On-State Resistance (Max): 400 mOhm
- Channel-to-Channel Matching (ΔRon): 20 mOhm
- Voltage - Supply, Single (V+): 1.65 V ~ 4.3 V
- Voltage - Supply, Dual (V±): -
- Switch Time (Ton, Toff) (Max): 60ns, 35ns
- -3db Bandwidth: 50MHz
- Charge Injection: 30pC
- Channel Capacitance (CS(off), CD(off)): 15pF
- Current - Leakage (IS(off)) (Max): 50nA
- Crosstalk: -70dB @ 100kHz
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 10-UFQFN
- Supplier Device Package: 10-TQFN (1.4x1.8)
|
パッケージ: 10-UFQFN |
在庫5,952 |
|
|
|
Alpha & Omega Semiconductor Inc. |
IC REG BUCK ADJUSTABLE 5A 8SO
- Function: Step-Down
- Output Configuration: Positive
- Topology: Buck
- Output Type: Adjustable
- Number of Outputs: 1
- Voltage - Input (Min): 4.5V
- Voltage - Input (Max): 18V
- Voltage - Output (Min/Fixed): 0.8V
- Voltage - Output (Max): 18V
- Current - Output: 5A
- Frequency - Switching: 500kHz
- Synchronous Rectifier: Yes
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package: 8-SO-EP
|
パッケージ: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
在庫3,392 |
|
|
|
Alpha & Omega Semiconductor Inc. |
IC REG BUCK ADJUSTABLE 3A 8SOIC
- Function: Step-Down
- Output Configuration: Positive
- Topology: Buck
- Output Type: Adjustable
- Number of Outputs: 1
- Voltage - Input (Min): 4.5V
- Voltage - Input (Max): 16V
- Voltage - Output (Min/Fixed): 0.8V
- Voltage - Output (Max): 16V
- Current - Output: 3A
- Frequency - Switching: 500kHz
- Synchronous Rectifier: No
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
|
パッケージ: 8-SOIC (0.154", 3.90mm Width) |
在庫4,208 |
|
|
|
Alpha & Omega Semiconductor Inc. |
IC REG BUCK ADJUSTABLE 5A 8DFN
- Function: Step-Down
- Output Configuration: Positive
- Topology: Buck
- Output Type: Adjustable
- Number of Outputs: 1
- Voltage - Input (Min): 4.5V
- Voltage - Input (Max): 16V
- Voltage - Output (Min/Fixed): 0.8V
- Voltage - Output (Max): 16V
- Current - Output: 5A
- Frequency - Switching: 500kHz
- Synchronous Rectifier: No
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-VDFN Exposed Pad
- Supplier Device Package: 8-DFN-EP (5x4)
|
パッケージ: 8-VDFN Exposed Pad |
在庫6,288 |
|
|
|
Alpha & Omega Semiconductor Inc. |
POWER IC EZBUCK
- Function: Step-Down
- Output Configuration: Positive
- Topology: Buck
- Output Type: Adjustable
- Number of Outputs: 1
- Voltage - Input (Min): 4V
- Voltage - Input (Max): 28V
- Voltage - Output (Min/Fixed): 0.8V
- Voltage - Output (Max): 23.8V
- Current - Output: 8A
- Frequency - Switching: 1MHz
- Synchronous Rectifier: Yes
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 22-PowerTFQFN
- Supplier Device Package: 22-QFN (4x4)
|
パッケージ: 22-PowerTFQFN |
在庫3,952 |
|
|
|
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 20.5A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 20.5A (Ta), 46A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 15 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252 (DPAK)
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
|
パッケージ: - |
Request a Quote |
|
|
|
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 700V 8.5A TO251A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 700 V
- Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 104W (Tc)
- Rds On (Max) @ Id, Vgs: 600mOhm @ 2.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-251A
- Package / Case: TO-251-3 Stub Leads, IPAK
|
パッケージ: - |
Request a Quote |
|
|
|
Alpha & Omega Semiconductor Inc. |
IC ELECTRONIC FUSE 10DFN
- Function: Electronic Fuse
- Sensing Method: -
- Accuracy: -
- Voltage - Input: 3.5V ~ 14V
- Current - Output: 5A
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 10-VFDFN Exposed Pad
- Supplier Device Package: 10-DFN-EP (3x3)
|
パッケージ: - |
在庫12,870 |
|
|
|
Alpha & Omega Semiconductor Inc. |
IPM3
- Type: IGBT
- Configuration: 3 Phase Inverter
- Current: 10 A
- Voltage: 600 V
- Voltage - Isolation: 2000Vrms
- Package / Case: 26-PowerDIP Module (1.146", 29.10mm)
|
パッケージ: - |
Request a Quote |
|
|
|
Alpha & Omega Semiconductor Inc. |
20V/60A DRMOS SMOD EN CONTROL TH
- Output Configuration: Half Bridge
- Applications: Synchronous Buck Converters
- Interface: PWM
- Load Type: Inductive, Capacitive
- Technology: DrMOS
- Rds On (Typ): -
- Current - Output / Channel: 60A
- Current - Peak Output: 120A
- Voltage - Supply: 4.5V ~ 5.5V
- Voltage - Load: 4.5V ~ 20V
- Operating Temperature: -40°C ~ 125°C (TJ)
- Features: Bootstrap Circuit, Diode Emulation, Status Flag
- Fault Protection: Over Temperature, Shoot-Through, UVLO
- Mounting Type: Surface Mount
- Package / Case: 31-PowerVFQFN Module
- Supplier Device Package: 31-QFN (5x5)
|
パッケージ: - |
在庫53,865 |
|
|
|
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 8DFN 5X6
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
|
パッケージ: - |
Request a Quote |
|
|
|
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 600V 20A TO263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1935 pF @ 100 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 208W (Tc)
- Rds On (Max) @ Id, Vgs: 190mOhm @ 7.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2PAK)
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
|
パッケージ: - |
在庫5,856 |
|
|
|
Alpha & Omega Semiconductor Inc. |
IGBT 15A
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 30 A
- Current - Collector Pulsed (Icm): 45 A
- Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 15A
- Power - Max: 214 W
- Switching Energy: 290µJ (on), 200µJ (off)
- Input Type: Standard
- Gate Charge: 32 nC
- Td (on/off) @ 25°C: 15ns/94ns
- Test Condition: 400V, 15A, 20Ohm, 15V
- Reverse Recovery Time (trr): 106 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263 (D2PAK)
|
パッケージ: - |
Request a Quote |
|
|
|
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 40V 5X6 DFN
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
|
パッケージ: - |
Request a Quote |
|
|
|
Alpha & Omega Semiconductor Inc. |
IC USB TYPE-C PROT SWITCH 20DFN
- Switch Type: USB Switch
- Number of Outputs: 1
- Ratio - Input:Output: 1:1
- Output Configuration: High Side
- Output Type: N-Channel
- Interface: On/Off
- Voltage - Load: 3.4V ~ 22V
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 10A
- Rds On (Typ): 39mOhm
- Input Type: Non-Inverting
- Features: Auto Restart, Slew Rate Controlled, Status Flag
- Fault Protection: Over Temperature, Over Voltage, Short Circuit, UVLO
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 20-PowerVFDFN
- Supplier Device Package: 20-DFN-EP (3x5.2)
|
パッケージ: - |
Request a Quote |
|
|
|
Alpha & Omega Semiconductor Inc. |
N
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 4140 pF @ 100 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 8.3W (Ta), 357W (Tc)
- Rds On (Max) @ Id, Vgs: 110mOhm @ 19A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 4-DFN (8x8)
- Package / Case: 4-PowerTSFN
|
パッケージ: - |
Request a Quote |
|