Broadcom Limited 製品 - トランジスタ - バイポーラ（BJT） - RF

AT-64000-GP4

Broadcom Limited

TRANSISTOR NPN BIPOLAR CHIP

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 20V
• Frequency - Transition: -
• Noise Figure (dB Typ @ f): -
• Gain: -
• Power - Max: 3W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 110mA, 8V
• Current - Collector (Ic) (Max): 200mA
• Operating Temperature: 200°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: -

パッケージ: Die

AT-42000-GP4

Broadcom Limited

TRANSISTOR NPN BIPOLAR CHIP

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 12V
• Frequency - Transition: 9GHz
• Noise Figure (dB Typ @ f): 1.9dB ~ 3dB @ 2GHz ~ 4GHz
• Gain: 10.5dB ~ 14dB
• Power - Max: 600mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 35mA, 8V
• Current - Collector (Ic) (Max): 80mA
• Operating Temperature: 200°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Chip

パッケージ: Die

AT-41535G

Broadcom Limited

TRANSISTOR NPN BIPOLAR 35MICRO-X

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 12V
• Frequency - Transition: 8GHz
• Noise Figure (dB Typ @ f): 1.3dB ~ 3dB @ 1GHz ~ 4GHz
• Gain: 10dB ~ 18dB
• Power - Max: 500mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 8V
• Current - Collector (Ic) (Max): 60mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 4-SMD (35 micro-X)
• Supplier Device Package: 35 micro-X

パッケージ: 4-SMD (35 micro-X)

AT-41500-GP4

Broadcom Limited

IC TRANS NPN GP BIPOLAR 86PP

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 12V
• Frequency - Transition: 8GHz
• Noise Figure (dB Typ @ f): 1.4dB ~ 3dB @ 1GHz ~ 4GHz
• Gain: 8dB ~ 17dB
• Power - Max: 500mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 8V
• Current - Collector (Ic) (Max): 60mA
• Operating Temperature: 200°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

パッケージ: Die

AT-42086-TR1G

Broadcom Limited

TRANS NPN BIPO 12V 80MA 86-SMD

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 12V
• Frequency - Transition: 8GHz
• Noise Figure (dB Typ @ f): 1.9dB ~ 3.5dB @ 2GHz ~ 4GHz
• Gain: 9dB ~ 13dB
• Power - Max: 500mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 35mA, 8V
• Current - Collector (Ic) (Max): 80mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-86
• Supplier Device Package: 86 Plastic

パッケージ: SOT-86

AT-41586-TR1G

Broadcom Limited

TRANS NPN BIPO 12V 60MA 86-SMD

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 12V
• Frequency - Transition: 8GHz
• Noise Figure (dB Typ @ f): 1.4dB ~ 3dB @ 1GHz ~ 4GHz
• Gain: 8dB ~ 17dB
• Power - Max: 500mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 8V
• Current - Collector (Ic) (Max): 60mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-86
• Supplier Device Package: 86 Plastic

パッケージ: SOT-86

AT-42036-TR1G

Broadcom Limited

TRANS NPN BIPO 12V 80MA 36-SMD

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 12V
• Frequency - Transition: 8GHz
• Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 2GHz ~ 4GHz
• Gain: 10dB ~ 13.5dB
• Power - Max: 600mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 35mA, 8V
• Current - Collector (Ic) (Max): 80mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 4-SMD (36 micro-X)
• Supplier Device Package: 36 micro-X

パッケージ: 4-SMD (36 micro-X)