ページ 9 - Cree/Wolfspeed 製品 | Heisener Electronics
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Cree/Wolfspeed 製品

レコード 243
ページ  9/9
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CPMF-1200-S080B
Cree/Wolfspeed

MOSFET N-CH SICFET 1200V 50A DIE

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 90.8nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1915pF @ 800V
  • Vgs (Max): +25V, -5V
  • FET Feature: -
  • Power Dissipation (Max): 313mW (Tj)
  • Rds On (Max) @ Id, Vgs: 110 mOhm @ 20A, 20V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Die
  • Package / Case: Die
パッケージ: Die
在庫5,232
C3M0280090J
Cree/Wolfspeed

MOSFET N-CH 900V 11A

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
  • Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 600V
  • Vgs (Max): +18V, -8V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 360 mOhm @ 7.5A, 15V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK-7
  • Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
パッケージ: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
在庫18,312
C3M0075120K
Cree/Wolfspeed

MOSFET N-CH SICFET 1.2KV TO247-4

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 30.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 4V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 51nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 1000V
  • Vgs (Max): +19V, -8V
  • FET Feature: -
  • Power Dissipation (Max): 119W (Tc)
  • Rds On (Max) @ Id, Vgs: 90 mOhm @ 20A, 15V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4L
  • Package / Case: TO-247-4
パッケージ: TO-247-4
在庫22,176
C3M0120090D
Cree/Wolfspeed

900V, 120 MOHM, G3 SIC MOSFET

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 3.5V @ 3mA
  • Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 600V
  • Vgs (Max): +18V, -8V
  • FET Feature: -
  • Power Dissipation (Max): 97W (Tc)
  • Rds On (Max) @ Id, Vgs: 155 mOhm @ 15A, 15V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
パッケージ: TO-247-3
在庫16,020
CGH09120F
Cree/Wolfspeed

RF MOSFET HEMT 28V 440095

  • Transistor Type: HEMT
  • Frequency: 2.5GHz
  • Gain: 21.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.2A
  • Power - Output: 120W
  • Voltage - Rated: 84V
  • Package / Case: 440095
  • Supplier Device Package: 440095
パッケージ: 440095
在庫6,368
CGH60008D-GP4
Cree/Wolfspeed

RF MOSFET HEMT 28V DIE

  • Transistor Type: HEMT
  • Frequency: 6GHz
  • Gain: 15dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 8W
  • Voltage - Rated: 84V
  • Package / Case: Die
  • Supplier Device Package: Die
パッケージ: Die
在庫6,012
CSD08060A
Cree/Wolfspeed

DIODE SCHOTTKY 600V 12.5A TO220

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 12.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 8A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 200µA @ 600V
  • Capacitance @ Vr, F: 470pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2
  • Operating Temperature - Junction: -55°C ~ 175°C
パッケージ: TO-220-2
在庫5,232
C4D08120E-TR
Cree/Wolfspeed

DIODE SCHOTTKY 1.2KV 24.5A TO252

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 24.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 8A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 250µA @ 1200V
  • Capacitance @ Vr, F: 560pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252-2
  • Operating Temperature - Junction: -55°C ~ 175°C
パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63
在庫6,096
C3D08060G-TR
Cree/Wolfspeed

DIODE SCHOTTKY 600V 20A TO263-2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 6A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Capacitance @ Vr, F: 26pF @ 400V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263-2
  • Operating Temperature - Junction: -55°C ~ 175°C
パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
在庫4,144
hot C3D03060E-TR
Cree/Wolfspeed

DIODE SCHOTTKY 600V 11.5A TO252

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 11.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Capacitance @ Vr, F: 155pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252-2
  • Operating Temperature - Junction: -55°C ~ 175°C
パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63
在庫102,312
C3D02065E-TR
Cree/Wolfspeed

DIODE SCHOTTKY 650V 8A TO252-2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50µA @ 650V
  • Capacitance @ Vr, F: 120pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252-2
  • Operating Temperature - Junction: -55°C ~ 175°C
パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63
在庫7,120
hot C3D02060A
Cree/Wolfspeed

DIODE SCHOTTKY 600V 2A TO220-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 2A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 2A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Capacitance @ Vr, F: 120pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2
  • Operating Temperature - Junction: -55°C ~ 175°C
パッケージ: TO-220-2
在庫3,952
C3D02065E
Cree/Wolfspeed

DIODE SCHOTTKY 650V 2A TO252-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 2A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 50µA @ 650V
  • Capacitance @ Vr, F: 120pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252-2
  • Operating Temperature - Junction: -55°C ~ 175°C
パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63
在庫24,858
CVFD20065A
Cree/Wolfspeed

DIODE SCHKY SIC 650V 20A TO-220

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 20A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.45V @ 20A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 80µA @ 650V
  • Capacitance @ Vr, F: 1100pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2
  • Operating Temperature - Junction: -55°C ~ 175°C
パッケージ: TO-220-2
在庫7,260
hot C3D20060D
Cree/Wolfspeed

DIODE ARRAY SCHOTTKY 600V TO247

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io) (per Diode): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
パッケージ: TO-247-3
在庫4,592
CGHV40030-TB
Cree/Wolfspeed

TEST FIXTURE FOR CGHV40300F

  • Type: FET
  • Frequency: 960MHz ~ 1.4GHz
  • For Use With/Related Products: CGHV40030
  • Supplied Contents: Partially Populated Board - Main IC Not Included
パッケージ: -
在庫6,732
CGHV50200F-AMP
Cree/Wolfspeed

EVAL BOARD FOR CGHV50200

  • Type: HEMT
  • Frequency: 4.4GHz ~ 5GHz
  • For Use With/Related Products: CGHV50200
  • Supplied Contents: Board
パッケージ: -
在庫7,686
CGHV96100F2-TB
Cree/Wolfspeed

TEST FIXTURE FOR CGHV96100F2

  • Type: FET
  • Frequency: 8.4GHz ~ 9.6GHz
  • For Use With/Related Products: CGHV96100
  • Supplied Contents: Partially Populated Board - Main IC Not Included
パッケージ: -
在庫4,932
CMPA0060002F
Cree/Wolfspeed

IC AMP GAN HEMT MMIC 780019

  • Frequency: 20MHz ~ 6GHz
  • P1dB: -
  • Gain: 18.8dB
  • Noise Figure: -
  • RF Type: -
  • Voltage - Supply: 2 V ~ 28 V
  • Current - Supply: -
  • Test Frequency: 500MHz
  • Package / Case: 780019
  • Supplier Device Package: 780019
パッケージ: 780019
在庫8,226