Diodes Incorporated 製品

KD3270040

Diodes Incorporated

OSC XO 32.768KHZ LVCMOS SMD

• Type: XO (Standard)
• Frequency: 32.768kHz
• Function: Enable/Disable
• Output: LVCMOS
• Voltage - Supply: 3.3V
• Frequency Stability: ±25ppm
• Operating Temperature: -40°C ~ 85°C
• Current - Supply (Max): 500µA
• Ratings: -
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, No Lead
• Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
• Height - Seated (Max): 0.053" (1.35mm)

パッケージ: 4-SMD, No Lead

FN5000121

Diodes Incorporated

OSCILLATOR XO 50MHZ LVCMOS SMD

• Type: XO (Standard)
• Frequency: 50MHz
• Function: Enable/Disable
• Output: LVCMOS
• Voltage - Supply: 3.3V
• Frequency Stability: ±50ppm
• Operating Temperature: -20°C ~ 70°C
• Current - Supply (Max): 18mA
• Ratings: -
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, No Lead
• Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
• Height - Seated (Max): 0.061" (1.55mm)

パッケージ: 4-SMD, No Lead

FL384WFIN1

Diodes Incorporated

CRYSTAL 38.4000MHZ 7PF SMD

• Type: MHz Crystal
• Frequency: 38.4MHz
• Frequency Stability: ±12ppm
• Frequency Tolerance: ±10ppm
• Load Capacitance: 7pF
• ESR (Equivalent Series Resistance): 60 Ohm
• Operating Mode: Fundamental
• Operating Temperature: -30°C ~ 90°C
• Ratings: -
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, No Lead
• Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
• Height - Seated (Max): 0.031" (0.78mm)

パッケージ: 4-SMD, No Lead

ZXM61P02FTC

Diodes Incorporated

MOSFET P-CH 20V 0.9A SOT23-3

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
• Vgs(th) (Max) @ Id: 1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 15V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 625mW (Ta)
• Rds On (Max) @ Id, Vgs: 600 mOhm @ 610mA, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-3
• Package / Case: TO-236-3, SC-59, SOT-23-3

パッケージ: TO-236-3, SC-59, SOT-23-3

FZT705TC

Diodes Incorporated

TRANS PNP DARL 120V 2A SOT223

• Transistor Type: PNP - Darlington
• Current - Collector (Ic) (Max): 2A
• Voltage - Collector Emitter Breakdown (Max): 120V
• Vce Saturation (Max) @ Ib, Ic: 2.5V @ 2mA, 2A
• Current - Collector Cutoff (Max): 10µA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 3000 @ 1A, 5V
• Power - Max: 2W
• Frequency - Transition: 160MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223

パッケージ: TO-261-4, TO-261AA

FMMT593TA

Diodes Incorporated

TRANS PNP 100V 1A SOT23-3

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 100V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
• Power - Max: 500mW
• Frequency - Transition: 50MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

パッケージ: TO-236-3, SC-59, SOT-23-3

DSS45160FDB-7

Diodes Incorporated

TRANS NPN/PNP 1A 60V U-DFN2020-6

• Transistor Type: NPN, PNP
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 240mV @ 50mA, 1A / 550mV @ 50mA, 1A
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V / 120 @ 500mA, 2V
• Power - Max: 405mW
• Frequency - Transition: 175MHz, 65MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-UDFN Exposed Pad
• Supplier Device Package: U-DFN2020-6 (Type B)

パッケージ: 6-UDFN Exposed Pad

BZT52HC11WF-7

Diodes Incorporated

ZENER DIODE SOD123F T&R 3K

• Voltage - Zener (Nom) (Vz): 11V
• Tolerance: ±5.45%
• Power - Max: 375mW
• Impedance (Max) (Zzt): 10 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 8V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: SOD-123F

パッケージ: SOD-123F

UDZ3V6B-7

Diodes Incorporated

DIODE ZENER 3.6V 200MW SOD323

• Voltage - Zener (Nom) (Vz): 3.6V
• Tolerance: ±3%
• Power - Max: 200mW
• Impedance (Max) (Zzt): 100 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: SOD-323

パッケージ: SC-76, SOD-323

ZLLS2000TC

Diodes Incorporated

DIODE SCHOTTKY 40V 2.2A SOT23-6

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 2.2A (DC)
• Voltage - Forward (Vf) (Max) @ If: 540mV @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 6ns
• Current - Reverse Leakage @ Vr: 40µA @ 30V
• Capacitance @ Vr, F: 65pF @ 30V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-6
• Supplier Device Package: SOT-23-6
• Operating Temperature - Junction: 150°C (Max)

パッケージ: SOT-23-6

PDR5K-13

Diodes Incorporated

DIODE GEN PURP 750V 5A POWERDI5

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 750V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 990mV @ 5A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 3µs
• Current - Reverse Leakage @ Vr: 10µA @ 750V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: PowerDI? 5
• Supplier Device Package: PowerDI? 5
• Operating Temperature - Junction: -65°C ~ 155°C

パッケージ: PowerDI? 5

MBR15100CT-G1

Diodes Incorporated

DIODE ARRAY SCHOTTKY 100V TO220

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io) (per Diode): 7.5A
• Voltage - Forward (Vf) (Max) @ If: 850mV @ 7.5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100µA @ 100V
• Operating Temperature - Junction: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220-3

パッケージ: TO-220-3

AL3157F-7

Diodes Incorporated

IC LED DRVR RGLTR DIM 30MA 12DFN

• Type: DC DC Regulator
• Topology: Switched Capacitor (Charge Pump)
• Internal Switch(s): Yes
• Number of Outputs: 4
• Voltage - Supply (Min): 2.7V
• Voltage - Supply (Max): 5.5V
• Voltage - Output: -
• Current - Output / Channel: 30mA, 210mA
• Frequency: 1.2MHz
• Dimming: PWM
• Applications: Backlight
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 12-UFDFN Exposed Pad
• Supplier Device Package: 12-DFN (3x3)

パッケージ: 12-UFDFN Exposed Pad

PI74STX1GU04CEX

Diodes Incorporated

IC UNBUFFERED INVERTER SC70-5

• Logic Type: Inverter
• Number of Circuits: 1
• Number of Inputs: 1
• Features: -
• Voltage - Supply: 1.65 V ~ 5.5 V
• Current - Quiescent (Max): 2µA
• Current - Output High, Low: 16mA, 16mA
• Logic Level - Low: -
• Logic Level - High: -
• Max Propagation Delay @ V, Max CL: 3.4ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Supplier Device Package: SC-70-5
• Package / Case: 5-TSSOP, SC-70-5, SOT-353

パッケージ: 5-TSSOP, SC-70-5, SOT-353

APX393SG-13

Diodes Incorporated

IC OP AMP R-R DUAL 8-SOIC

• Type: General Purpose
• Number of Elements: 2
• Output Type: Open-Drain, Rail-to-Rail
• Voltage - Supply, Single/Dual (±): 2.5 V ~ 5.5 V
• Voltage - Input Offset (Max): 7mV @ 5V
• Current - Input Bias (Max): 0.25µA @ 5V
• Current - Output (Typ): 60mA @ 5V
• Current - Quiescent (Max): 180µA
• CMRR, PSRR (Typ): -
• Propagation Delay (Max): 600ns
• Hysteresis: -
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOP

パッケージ: 8-SOIC (0.154", 3.90mm Width)

PI90LVB010WEX

Diodes Incorporated

IC SNGL BUS LVDS TXRX 8SOIC

• Type: Receiver
• Protocol: LVDS
• Number of Drivers/Receivers: 0/4
• Duplex: -
• Receiver Hysteresis: -
• Data Rate: 500Mbps
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

パッケージ: 8-SOIC (0.154", 3.90mm Width)

PS393CSE

Diodes Incorporated

IC SWITCH QUAD SPST 16SOIC

• Switch Circuit: SPST - NO/NC
• Multiplexer/Demultiplexer Circuit: 1:1
• Number of Circuits: 4
• On-State Resistance (Max): 45 Ohm
• Channel-to-Channel Matching (ΔRon): 500 mOhm
• Voltage - Supply, Single (V+): 3 V ~ 15 V
• Voltage - Supply, Dual (V±): ±3 V ~ 8 V
• Switch Time (Ton, Toff) (Max): 130ns, 75ns
• -3db Bandwidth: 100MHz
• Charge Injection: 3pC
• Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
• Current - Leakage (IS(off)) (Max): 100pA
• Crosstalk: -90dB @ 1MHz
• Operating Temperature: 0°C ~ 70°C (TA)
• Package / Case: 16-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 16-SOIC

パッケージ: 16-SOIC (0.295", 7.50mm Width)

PI3VST01ZEEX

Diodes Incorporated

IC HPD SIGNAL GEN VGA 10-TDFN

• Applications: VGA Connector
• Multiplexer/Demultiplexer Circuit: -
• Switch Circuit: -
• Number of Channels: 1
• On-State Resistance (Max): 5.5 Ohm
• Voltage - Supply, Single (V+): 3V, 5V
• Voltage - Supply, Dual (V±): -
• -3db Bandwidth: 2GHz
• Features: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

AH3376-P-A

Diodes Incorporated

MAGNETIC SWITCH UNIPOLAR 3SIP

• Function: Unipolar Switch
• Technology: Hall Effect
• Polarization: South Pole
• Sensing Range: 100mT Trip, 85mT Release
• Test Condition: -40°C ~ 125°C
• Voltage - Supply: 3 V ~ 28 V
• Current - Supply (Max): 4mA
• Current - Output (Max): 55mA
• Output Type: Open Drain
• Features: -
• Operating Temperature: -40°C ~ 125°C (TA)
• Package / Case: 3-SIP
• Supplier Device Package: -

パッケージ: 3-SIP

PS7M809MTE

Diodes Incorporated

IC CLOCK

• Type: -
• Number of Circuits: -
• Ratio - Input:Output: -
• Differential - Input:Output: -
• Input: -
• Output: -
• Frequency - Max: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

PT7V40262-5GWF

Diodes Incorporated

CLOCK VCXO

• Type: -
• Count: -
• Frequency: -
• Voltage - Supply: -
• Current - Supply: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -
• Mounting Type: -

パッケージ: -

DMP2110UFDBQ-7

Diodes Incorporated

MOSFET BVDSS: 8V~24V U-DFN2020-6

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 443 pF @ 10 V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 800mW (Ta)
• Rds On (Max) @ Id, Vgs: 80mOhm @ 2.8A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: U-DFN2020-6 (Type B)
• Package / Case: 6-UDFN Exposed Pad

パッケージ: -

MMSZ5246BQ-7-F

Diodes Incorporated

ZENER DIODE SOD123 T&R 3K

• Voltage - Zener (Nom) (Vz): 16 V
• Tolerance: ±5%
• Power - Max: 370 mW
• Impedance (Max) (Zzt): 17 Ohms
• Current - Reverse Leakage @ Vr: 100 nA @ 12 V
• Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

パッケージ: -

DMN1053UCP4-7

Diodes Incorporated

MOSFET N-CH 12V 2.7A X3DSN0808-4

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 12 V
• Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
• Vgs(th) (Max) @ Id: 700mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 908 pF @ 6 V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 1.34W
• Rds On (Max) @ Id, Vgs: 42mOhm @ 1A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: X3-DSN0808-4
• Package / Case: 4-XFBGA, CSPBGA

パッケージ: -

DMT12H060LCA9-7

Diodes Incorporated

MOSFET BVDSS: 101V~250V X4-DSN15

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 115 V
• Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 5 V
• Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 50 V
• Vgs (Max): ±5.5V
• FET Feature: -
• Power Dissipation (Max): 1.1W (Ta)
• Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: X2-DSN1515-9
• Package / Case: 9-SMD, No Lead

パッケージ: -

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PI3WVR626XEBEX

Diodes Incorporated

MIPI SWITCH,X1-QFN2525-24,T&R,3.

• Applications: Telecommunications
• Multiplexer/Demultiplexer Circuit: 2:1
• Switch Circuit: SPDT
• Number of Channels: 3
• On-State Resistance (Max): 5Ohm
• Voltage - Supply, Single (V+): 1.5V ~ 3.6V
• Voltage - Supply, Dual (V±): -
• -3db Bandwidth: 4.5GHz
• Features: MIPI
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 24-XFQFN Exposed Pad
• Supplier Device Package: 24-X1QFN (2.5x2.5)

パッケージ: -

APX803L20-20W5-7

Diodes Incorporated

Reset Generator SOT25 T&R 3K

• Type: Voltage Detector
• Number of Voltages Monitored: 1
• Output: Open Drain or Open Collector
• Reset: Active Low
• Reset Timeout: 143ms Minimum
• Voltage - Threshold: 2V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: SOT-25

パッケージ: -

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DMN3061SWQ-7

Diodes Incorporated

MOSFET BVDSS: 25V~30V SOT323 T&R

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
• Vgs(th) (Max) @ Id: 1.8V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 278 pF @ 15 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 490mW (Ta)
• Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-323
• Package / Case: SC-70, SOT-323

パッケージ: -