ページ 572 - Diodes Incorporated 製品

部品番号	メーカ	説明	パッケージ	在庫
FL3200037	Diodes Incorporated	CRYSTAL 32.0000MHZ 8PF SMD Type: MHz Crystal Frequency: 32MHz Frequency Stability: ±15ppm Frequency Tolerance: ±15ppm Load Capacitance: 8pF ESR (Equivalent Series Resistance): 50 Ohm Operating Mode: Fundamental Operating Temperature: -20°C ~ 70°C Ratings: - Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Height - Seated (Max): 0.030" (0.75mm)	パッケージ: 4-SMD, No Lead	在庫26,532
DMN6069SFGQ-7	Diodes Incorporated	MOSFET BVDSS: 41V 60V POWERDI333 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.4W Rds On (Max) @ Id, Vgs: 50 mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI3333-8 Package / Case: 8-PowerVDFN	パッケージ: 8-PowerVDFN	在庫4,048
2N7002H-13	Diodes Incorporated	MOSFET N-CH 60V 0.17A SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 370mW (Ta) Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	パッケージ: TO-236-3, SC-59, SOT-23-3	在庫6,016
DMN55D0UTQ-7	Diodes Incorporated	MOSFET N-CH 50V 160MA SOT-523 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 160mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 200mW (Ta) Rds On (Max) @ Id, Vgs: 4 Ohm @ 100mA, 4V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-523 Package / Case: SOT-523	パッケージ: SOT-523	在庫28,878
DMP3056L-7	Diodes Incorporated	MOSFET P-CH 30V 4.3A SOT23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 642pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 1.38W (Ta) Rds On (Max) @ Id, Vgs: 50 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	パッケージ: TO-236-3, SC-59, SOT-23-3	在庫207,642
DMN5L06VK-7	Diodes Incorporated	MOSFET 2N-CH 50V 0.28A SOT-563 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 280mA Rds On (Max) @ Id, Vgs: 2 Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 250mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	パッケージ: SOT-563, SOT-666	在庫6,741,552
ZXTC6719MCTA	Diodes Incorporated	TRANS NPN/PNP 50V/40V 4A/3A 8DFN Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 4A, 3A Voltage - Collector Emitter Breakdown (Max): 50V, 40V Vce Saturation (Max) @ Ib, Ic: 320mV @ 200mA, 4A / 370mV @ 250mA, 2.5A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V / 60 @ 1.5A, 2V Power - Max: 1.7W Frequency - Transition: 165MHz, 190MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-DFN (3x2)	パッケージ: 8-WDFN Exposed Pad	在庫36,000
DDA114EU-7	Diodes Incorporated	TRANS 2PNP PREBIAS 0.2W SOT363 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	パッケージ: 6-TSSOP, SC-88, SOT-363	在庫24,018
DDC113TU-7-F	Diodes Incorporated	TRANS 2NPN PREBIAS 0.2W SOT363 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 1k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): - Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	パッケージ: 6-TSSOP, SC-88, SOT-363	在庫36,000
MMSZ5245B-7-F	Diodes Incorporated	DIODE ZENER 15V 500MW SOD123 Voltage - Zener (Nom) (Vz): 15V Tolerance: ±5% Power - Max: 500mW Impedance (Max) (Zzt): 16 Ohms Current - Reverse Leakage @ Vr: 100nA @ 11V Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA Operating Temperature: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123	パッケージ: SOD-123	在庫454,416
DZ23C7V5-7	Diodes Incorporated	DIODE ZENER ARRAY 7.5V SOT23-3 Configuration: 1 Pair Common Cathode Voltage - Zener (Nom) (Vz): 7.5V Tolerance: ±5% Power - Max: 300mW Impedance (Max) (Zzt): 7 Ohms Current - Reverse Leakage @ Vr: - Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	パッケージ: TO-236-3, SC-59, SOT-23-3	在庫2,304
SBR8M100P5Q-13	Diodes Incorporated	DIODE SBR 100V 8A POWERDI5 Diode Type: Super Barrier Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 880mV @ 8A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: PowerDI? 5 Supplier Device Package: PowerDI?5 Operating Temperature - Junction: -55°C ~ 175°C	パッケージ: PowerDI? 5	在庫3,360
SDM02U30CSP-7	Diodes Incorporated	DIODE SCHOTTKY X3-WLB0603-2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 500mV @ 200mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 30V Capacitance @ Vr, F: 9pF @ 0.5V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Supplier Device Package: X3-WLB0603-2 Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: 2-SMD, No Lead	在庫89,610
BAT46W-7-F	Diodes Incorporated	DIODE SCHOTTKY 100V 150MA SOD123 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 150mA (DC) Voltage - Forward (Vf) (Max) @ If: 450mV @ 10mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2µA @ 75V Capacitance @ Vr, F: 20pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 125°C	パッケージ: SOD-123	在庫1,362,600
GBJ806-F	Diodes Incorporated	RECT BRIDGE GPP 8A 600V GBJ Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1V @ 4A Current - Reverse Leakage @ Vr: 5µA @ 600V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBJ Supplier Device Package: GBJ	パッケージ: 4-SIP, GBJ	在庫7,128
PT7M6144NLEXVEX-2017	Diodes Incorporated	RESET GENERATOR U-DFN1616-4 Type: Simple Reset/Power-On Reset Number of Voltages Monitored: 1 Output: Open Drain or Open Collector Reset: Active Low Reset Timeout: 200 µs Maximum Voltage - Threshold: 4.4V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫2,800
PAM8902ZER-P	Diodes Incorporated	IC AMP AUD 30VPP CLASS D 16WCSP Type: Class D Output Type: 1-Channel (Mono) Max Output Power x Channels @ Load: - Voltage - Supply: 2.7 V ~ 5.5 V Features: Short-Circuit and Thermal Protection Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Supplier Device Package: 16-CSP (1.95x1.95) Package / Case: 16-WFBGA, WLCSP	パッケージ: 16-WFBGA, WLCSP	在庫270,192
PI3HDX1204EZLE	Diodes Incorporated	IC REDRIVER HDMI 42TQFN Applications: HDMI Redriver, Level Shifter Interface: - Voltage - Supply: 3.3V Package / Case: - Supplier Device Package: - Mounting Type: -	パッケージ: -	在庫4,816
PI2EQX6741SLZDEX	Diodes Incorporated	IC REDRIVER SATA3 1CH 20TQFN Type: Buffer, ReDriver Applications: SATA3 Input: CML Output: CML Data Rate (Max): 6Gbps Number of Channels: 1 Delay Time: - Signal Conditioning: Input Equalization, Output Pre-Emphasis Capacitance - Input: - Voltage - Supply: 1.05V Current - Supply: - Operating Temperature: - Mounting Type: - Package / Case: 20-WFQFN Exposed Pad Supplier Device Package: 20-TQFN (4x4)	パッケージ: 20-WFQFN Exposed Pad	在庫2,624
ZMC05TA	Diodes Incorporated	SENSOR CURRENT MR 5A AC/DC For Measuring: AC/DC Sensor Type: Magnetoresistive, Open Loop Current - Sensing: 5A Number of Channels: 1 Output: Ratiometric, Voltage Sensitivity: - Frequency: 100kHz Linearity: - Accuracy: - Voltage - Supply: 12V Response Time: - Current - Supply (Max): - Operating Temperature: -25°C ~ 125°C Polarization: Bidirectional Mounting Type: Surface Mount Package / Case: 8-SMD	パッケージ: 8-SMD	在庫7,110
PAM2306AYPAE	Diodes Incorporated	IC INTEGRATED CIRCUIT Function: - Output Configuration: - Topology: - Output Type: - Number of Outputs: - Voltage - Input (Min): - Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Current - Output: - Frequency - Switching: - Synchronous Rectifier: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫2,800
DMN2710UDWQ-13	Diodes Incorporated	MOSFET 2N-CH 20V 0.8A SOT363 FET Type: - FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V Power - Max: 360mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	パッケージ: -	Request a Quote
DMN3060LWQ-7	Diodes Incorporated	MOSFET BVDSS: 25V~30V SOT323 T&R FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 395 pF @ 15 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323 Package / Case: SC-70, SOT-323	パッケージ: -	在庫8,925
DMP1022UWS-13	Diodes Incorporated	MOSFET P-CH 12V 7.2A 8DFN FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12 V Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2847 pF @ 4 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 900mW (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: V-DFN3020-8 Package / Case: 8-VDFN	パッケージ: -	Request a Quote
AP7366EA-25W5-7	Diodes Incorporated	LDO CMOS HICURR SOT25 T&R 3K Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 6V Voltage - Output (Min/Fixed): 2.5V Voltage - Output (Max): - Voltage Dropout (Max): 0.38V @ 600mA Current - Output: 600mA Current - Quiescent (Iq): 80 µA Current - Supply (Max): - PSRR: 75dB ~ 55dB (1kHz ~ 10kHz) Control Features: Enable Protection Features: Over Current, Over Temperature, Short Circuit Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SOT-25	パッケージ: -	在庫8,661
DMTH10H038SPDW-13	Diodes Incorporated	MOSFET 2N-CH 100V 25A POWERDI50 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 544pF @ 50V Power - Max: 2.7W (Ta), 39W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8 (Type UXD)	パッケージ: -	Request a Quote
AP7353-285FS4-7	Diodes Incorporated	LDO CMOS LOWCURR X2-DFN1010-4 (T Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 2.85V Voltage - Output (Max): - Voltage Dropout (Max): 0.155V @ 250mA Current - Output: 250mA Current - Quiescent (Iq): 27 µA Current - Supply (Max): - PSRR: 90dB ~ 70dB (100Hz ~ 10kHz) Control Features: Current Limit, Enable Protection Features: Over Current, Over Temperature, Short Circuit Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 4-XDFN Exposed Pad Supplier Device Package: X2-DFN1010-4 (Type B)	パッケージ: -	Request a Quote
DMTH45M5SPDW-13	Diodes Incorporated	MOSFET 2N-CH 40V 79A POWERDI50 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 79A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1083pF @ 20V Power - Max: 3.3W (Ta), 60W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8 (Type UXD)	パッケージ: -	在庫6,570

FL3200037

Diodes Incorporated

CRYSTAL 32.0000MHZ 8PF SMD

Type: MHz Crystal
Frequency: 32MHz
Frequency Stability: ±15ppm
Frequency Tolerance: ±15ppm
Load Capacitance: 8pF
ESR (Equivalent Series Resistance): 50 Ohm
Operating Mode: Fundamental
Operating Temperature: -20°C ~ 70°C
Ratings: -
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Height - Seated (Max): 0.030" (0.75mm)

パッケージ: 4-SMD, No Lead

在庫26,532

DMN6069SFGQ-7

Diodes Incorporated

MOSFET BVDSS: 41V 60V POWERDI333

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 30V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.4W
Rds On (Max) @ Id, Vgs: 50 mOhm @ 4.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerDI3333-8
Package / Case: 8-PowerVDFN

パッケージ: 8-PowerVDFN

在庫4,048

2N7002H-13

Diodes Incorporated

MOSFET N-CH 60V 0.17A SOT23

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 370mW (Ta)
Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3

パッケージ: TO-236-3, SC-59, SOT-23-3

在庫6,016

DMN55D0UTQ-7

Diodes Incorporated

MOSFET N-CH 50V 160MA SOT-523

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 160mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
Vgs (Max): ±12V
FET Feature: -
Power Dissipation (Max): 200mW (Ta)
Rds On (Max) @ Id, Vgs: 4 Ohm @ 100mA, 4V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-523
Package / Case: SOT-523

パッケージ: SOT-523

在庫28,878

DMP3056L-7

Diodes Incorporated

MOSFET P-CH 30V 4.3A SOT23

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 642pF @ 25V
Vgs (Max): ±25V
FET Feature: -
Power Dissipation (Max): 1.38W (Ta)
Rds On (Max) @ Id, Vgs: 50 mOhm @ 6A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3

パッケージ: TO-236-3, SC-59, SOT-23-3

在庫207,642

DMN5L06VK-7

Diodes Incorporated

MOSFET 2N-CH 50V 0.28A SOT-563

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 280mA
Rds On (Max) @ Id, Vgs: 2 Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

パッケージ: SOT-563, SOT-666

在庫6,741,552

ZXTC6719MCTA

Diodes Incorporated

TRANS NPN/PNP 50V/40V 4A/3A 8DFN

Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 4A, 3A
Voltage - Collector Emitter Breakdown (Max): 50V, 40V
Vce Saturation (Max) @ Ib, Ic: 320mV @ 200mA, 4A / 370mV @ 250mA, 2.5A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V / 60 @ 1.5A, 2V
Power - Max: 1.7W
Frequency - Transition: 165MHz, 190MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-DFN (3x2)

パッケージ: 8-WDFN Exposed Pad

在庫36,000

DDA114EU-7

Diodes Incorporated

TRANS 2PNP PREBIAS 0.2W SOT363

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

パッケージ: 6-TSSOP, SC-88, SOT-363

在庫24,018

DDC113TU-7-F

Diodes Incorporated

TRANS 2NPN PREBIAS 0.2W SOT363

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 1k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): -
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

パッケージ: 6-TSSOP, SC-88, SOT-363

在庫36,000

MMSZ5245B-7-F

Diodes Incorporated

DIODE ZENER 15V 500MW SOD123

Voltage - Zener (Nom) (Vz): 15V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 16 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 11V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123

パッケージ: SOD-123

在庫454,416

DZ23C7V5-7

Diodes Incorporated

DIODE ZENER ARRAY 7.5V SOT23-3

Configuration: 1 Pair Common Cathode
Voltage - Zener (Nom) (Vz): 7.5V
Tolerance: ±5%
Power - Max: 300mW
Impedance (Max) (Zzt): 7 Ohms
Current - Reverse Leakage @ Vr: -
Voltage - Forward (Vf) (Max) @ If: -
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

パッケージ: TO-236-3, SC-59, SOT-23-3

在庫2,304

SBR8M100P5Q-13

Diodes Incorporated

DIODE SBR 100V 8A POWERDI5

Diode Type: Super Barrier
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 880mV @ 8A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: PowerDI? 5
Supplier Device Package: PowerDI?5
Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: PowerDI? 5

在庫3,360

SDM02U30CSP-7

Diodes Incorporated

DIODE SCHOTTKY X3-WLB0603-2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 500mV @ 200mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 30V
Capacitance @ Vr, F: 9pF @ 0.5V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Supplier Device Package: X3-WLB0603-2
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: 2-SMD, No Lead

在庫89,610

BAT46W-7-F

Diodes Incorporated

DIODE SCHOTTKY 100V 150MA SOD123

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 150mA (DC)
Voltage - Forward (Vf) (Max) @ If: 450mV @ 10mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2µA @ 75V
Capacitance @ Vr, F: 20pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 125°C

パッケージ: SOD-123

在庫1,362,600

GBJ806-F

Diodes Incorporated

RECT BRIDGE GPP 8A 600V GBJ

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
Current - Reverse Leakage @ Vr: 5µA @ 600V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBJ
Supplier Device Package: GBJ

パッケージ: 4-SIP, GBJ

在庫7,128

PT7M6144NLEXVEX-2017

Diodes Incorporated

RESET GENERATOR U-DFN1616-4

Type: Simple Reset/Power-On Reset
Number of Voltages Monitored: 1
Output: Open Drain or Open Collector
Reset: Active Low
Reset Timeout: 200 µs Maximum
Voltage - Threshold: 4.4V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫2,800

PAM8902ZER-P

Diodes Incorporated

IC AMP AUD 30VPP CLASS D 16WCSP

Type: Class D
Output Type: 1-Channel (Mono)
Max Output Power x Channels @ Load: -
Voltage - Supply: 2.7 V ~ 5.5 V
Features: Short-Circuit and Thermal Protection
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 16-CSP (1.95x1.95)
Package / Case: 16-WFBGA, WLCSP

パッケージ: 16-WFBGA, WLCSP

在庫270,192

PI3HDX1204EZLE

Diodes Incorporated

IC REDRIVER HDMI 42TQFN

Applications: HDMI Redriver, Level Shifter
Interface: -
Voltage - Supply: 3.3V
Package / Case: -
Supplier Device Package: -
Mounting Type: -

パッケージ: -

在庫4,816

PI2EQX6741SLZDEX

Diodes Incorporated

IC REDRIVER SATA3 1CH 20TQFN

Type: Buffer, ReDriver
Applications: SATA3
Input: CML
Output: CML
Data Rate (Max): 6Gbps
Number of Channels: 1
Delay Time: -
Signal Conditioning: Input Equalization, Output Pre-Emphasis
Capacitance - Input: -
Voltage - Supply: 1.05V
Current - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: 20-WFQFN Exposed Pad
Supplier Device Package: 20-TQFN (4x4)

パッケージ: 20-WFQFN Exposed Pad

在庫2,624

ZMC05TA

Diodes Incorporated

SENSOR CURRENT MR 5A AC/DC

For Measuring: AC/DC
Sensor Type: Magnetoresistive, Open Loop
Current - Sensing: 5A
Number of Channels: 1
Output: Ratiometric, Voltage
Sensitivity: -
Frequency: 100kHz
Linearity: -
Accuracy: -
Voltage - Supply: 12V
Response Time: -
Current - Supply (Max): -
Operating Temperature: -25°C ~ 125°C
Polarization: Bidirectional
Mounting Type: Surface Mount
Package / Case: 8-SMD

パッケージ: 8-SMD

在庫7,110

PAM2306AYPAE

Diodes Incorporated

IC INTEGRATED CIRCUIT

Function: -
Output Configuration: -
Topology: -
Output Type: -
Number of Outputs: -
Voltage - Input (Min): -
Voltage - Input (Max): -
Voltage - Output (Min/Fixed): -
Voltage - Output (Max): -
Current - Output: -
Frequency - Switching: -
Synchronous Rectifier: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫2,800

DMN2710UDWQ-13

Diodes Incorporated

MOSFET 2N-CH 20V 0.8A SOT363

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V
Power - Max: 360mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

パッケージ: -

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DMN3060LWQ-7

Diodes Incorporated

MOSFET BVDSS: 25V~30V SOT323 T&R

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 395 pF @ 15 V
Vgs (Max): ±12V
FET Feature: -
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-323
Package / Case: SC-70, SOT-323

パッケージ: -

在庫8,925

DMP1022UWS-13

Diodes Incorporated

MOSFET P-CH 12V 7.2A 8DFN

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12 V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2847 pF @ 4 V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 900mW (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: V-DFN3020-8
Package / Case: 8-VDFN

パッケージ: -

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AP7366EA-25W5-7

Diodes Incorporated

LDO CMOS HICURR SOT25 T&R 3K

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 6V
Voltage - Output (Min/Fixed): 2.5V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.38V @ 600mA
Current - Output: 600mA
Current - Quiescent (Iq): 80 µA
Current - Supply (Max): -
PSRR: 75dB ~ 55dB (1kHz ~ 10kHz)
Control Features: Enable
Protection Features: Over Current, Over Temperature, Short Circuit
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Supplier Device Package: SOT-25

パッケージ: -

在庫8,661

DMTH10H038SPDW-13

Diodes Incorporated

MOSFET 2N-CH 100V 25A POWERDI50

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 544pF @ 50V
Power - Max: 2.7W (Ta), 39W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerDI5060-8 (Type UXD)

パッケージ: -

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AP7353-285FS4-7

Diodes Incorporated

LDO CMOS LOWCURR X2-DFN1010-4 (T

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 2.85V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.155V @ 250mA
Current - Output: 250mA
Current - Quiescent (Iq): 27 µA
Current - Supply (Max): -
PSRR: 90dB ~ 70dB (100Hz ~ 10kHz)
Control Features: Current Limit, Enable
Protection Features: Over Current, Over Temperature, Short Circuit
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 4-XDFN Exposed Pad
Supplier Device Package: X2-DFN1010-4 (Type B)

パッケージ: -

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DMTH45M5SPDW-13

Diodes Incorporated

MOSFET 2N-CH 40V 79A POWERDI50

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1083pF @ 20V
Power - Max: 3.3W (Ta), 60W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerDI5060-8 (Type UXD)

パッケージ: -

在庫6,570