Diodes Incorporated 製品

FDA800002

Diodes Incorporated

OSC XO 108.000MHZ CMOS SMD

• Type: XO (Standard)
• Frequency: 108MHz
• Function: Enable/Disable
• Output: CMOS
• Voltage - Supply: 1.8V
• Frequency Stability: ±50ppm
• Operating Temperature: -20°C ~ 70°C
• Current - Supply (Max): 35mA
• Ratings: -
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, No Lead
• Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
• Height - Seated (Max): 0.051" (1.30mm)

パッケージ: 4-SMD, No Lead

FL2000059

Diodes Incorporated

CRYSTAL 20MHZ 9PF SMD

• Type: MHz Crystal
• Frequency: 20MHz
• Frequency Stability: ±10ppm
• Frequency Tolerance: ±10ppm
• Load Capacitance: 9pF
• ESR (Equivalent Series Resistance): 60 Ohm
• Operating Mode: Fundamental
• Operating Temperature: -30°C ~ 85°C
• Ratings: -
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, No Lead
• Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
• Height - Seated (Max): 0.030" (0.75mm)

パッケージ: 4-SMD, No Lead

ZDT705TA

Diodes Incorporated

TRANS 2PNP DARL 120V 1A SM8

• Transistor Type: 2 PNP Darlington (Dual)
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 120V
• Vce Saturation (Max) @ Ib, Ic: 2.5V @ 2mA, 2A
• Current - Collector Cutoff (Max): 10µA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 3000 @ 1A, 5V
• Power - Max: 2.75W
• Frequency - Transition: 160MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-223-8
• Supplier Device Package: SM8

パッケージ: SOT-223-8

MMBZ5245BW-7

Diodes Incorporated

DIODE ZENER 15V 200MW SOT323

• Voltage - Zener (Nom) (Vz): 15V
• Tolerance: ±5%
• Power - Max: 200mW
• Impedance (Max) (Zzt): 16 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 11V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323

パッケージ: SC-70, SOT-323

BZX84C43-7

Diodes Incorporated

DIODE ZENER 43V 350MW SOT23-3

• Voltage - Zener (Nom) (Vz): 43V
• Tolerance: ±7%
• Power - Max: 350mW
• Impedance (Max) (Zzt): 150 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 30.1V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

パッケージ: TO-236-3, SC-59, SOT-23-3

MBR5200VP-G1

Diodes Incorporated

DIODE SCHOTTKY 200V 5A DO27

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 950mV @ 5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 200V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: DO-27
• Operating Temperature - Junction: -65°C ~ 150°C

パッケージ: DO-201AA, DO-27, Axial

S1MDF-13

Diodes Incorporated

DIODE GEN PURP 1KV 1A DFLAT

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5µA @ 1000V
• Capacitance @ Vr, F: 6pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: 2-SMD, Flat Lead
• Supplier Device Package: D-Flat
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: 2-SMD, Flat Lead

SBR30A150CTFP

Diodes Incorporated

DIODE ARRAY SBR 150V 15A ITO220

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Super Barrier
• Voltage - DC Reverse (Vr) (Max): 150V
• Current - Average Rectified (Io) (per Diode): 15A
• Voltage - Forward (Vf) (Max) @ If: 880mV @ 15A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100µA @ 150V
• Operating Temperature - Junction: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack, Isolated Tab
• Supplier Device Package: ITO-220AB

パッケージ: TO-220-3 Full Pack, Isolated Tab

SBR8E60P5-7D

Diodes Incorporated

DIODE ARRY SBR 60V 8A POWERDI5

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 60V
• Current - Average Rectified (Io) (per Diode): 8A
• Voltage - Forward (Vf) (Max) @ If: 530mV @ 8A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 580µA @ 60V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: PowerDI? 5
• Supplier Device Package: PowerDI?5

パッケージ: PowerDI? 5

AUR9706AUGD

Diodes Incorporated

IC REG BUCK

• Function: -
• Output Configuration: -
• Topology: -
• Output Type: -
• Number of Outputs: -
• Voltage - Input (Min): -
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Current - Output: -
• Frequency - Switching: -
• Synchronous Rectifier: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

PS8AES02PE

Diodes Incorporated

IC CTLR HOME APPLIANCE

• Motor Type - Stepper: -
• Motor Type - AC, DC: -
• Function: -
• Output Configuration: -
• Interface: -
• Technology: -
• Step Resolution: -
• Applications: -
• Current - Output: -
• Voltage - Supply: -
• Voltage - Load: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

AS358MTR-G1

Diodes Incorporated

IC OPAMP GEN PURP 8-SO

• Amplifier Type: General Purpose
• Number of Circuits: 2
• Output Type: -
• Slew Rate: -
• Gain Bandwidth Product: -
• -3db Bandwidth: -
• Current - Input Bias: 20nA
• Voltage - Input Offset: 2mV
• Current - Supply: 700µA
• Current - Output / Channel: 40mA
• Voltage - Supply, Single/Dual (±): 3 V ~ 36 V, ±1.5 V ~ 18 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

パッケージ: 8-SOIC (0.154", 3.90mm Width)

ZXFN1000

Diodes Incorporated

IC CLASS D OUTPUT FILTER FERRITE

• Type: -
• Output Type: -
• Max Output Power x Channels @ Load: -
• Voltage - Supply: -
• Features: -
• Mounting Type: -
• Operating Temperature: -
• Supplier Device Package: -
• Package / Case: -

パッケージ: -

PI3HDX1204EZHE

Diodes Incorporated

IC REDRIVER HDMI 42TQFN

• Applications: HDMI Redriver, Level Shifter
• Interface: -
• Voltage - Supply: 3.3V
• Package / Case: -
• Supplier Device Package: -
• Mounting Type: -

パッケージ: -

PI5L100QEX

Diodes Incorporated

QUAD 2:1 MULTIPLEXER/DEMULTIPL

• Applications: -
• Multiplexer/Demultiplexer Circuit: 2:1
• Switch Circuit: SPDT
• Number of Channels: 4
• On-State Resistance (Max): 3 Ohm (Typ)
• Voltage - Supply, Single (V+): 6.2V
• Voltage - Supply, Dual (V±): -
• -3db Bandwidth: -
• Features: -
• Operating Temperature: 0°C ~ 70°C (TA)
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

FN2000095

Diodes Incorporated

CLOCK SAW OSCILLATOR SEAM7050

• Type: -
• Number of Circuits: -
• Ratio - Input:Output: -
• Differential - Input:Output: -
• Input: -
• Output: -
• Frequency - Max: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

SMAJ22A-13-F

Diodes Incorporated

TVS DIODE 22VWM 35.5VC SMA

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 22V
• Voltage - Breakdown (Min): 24.4V
• Voltage - Clamping (Max) @ Ipp: 35.5V
• Current - Peak Pulse (10/1000µs): 11.2A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: SMA

パッケージ: DO-214AC, SMA

PI3DPX1203BZLE

Diodes Incorporated

ACTIVE DISPLAY W-QFN3060-32 TRAY

• Type: Buffer, ReDriver
• Applications: DisplayPort
• Input: DisplayPort
• Output: DisplayPort
• Data Rate (Max): 8.1Gbps
• Number of Channels: 4
• Delay Time: -
• Signal Conditioning: Input Equalization
• Capacitance - Input: -
• Voltage - Supply: 3 V ~ 3.6 V
• Current - Supply: 243mA
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: -
• Package / Case: 32-WFQFN Exposed Pad
• Supplier Device Package: 32-TQFN (3x6)

パッケージ: 32-WFQFN Exposed Pad

DMN63D1LT-13

Diodes Incorporated

MOSFET N-CH 60V 320MA SOT523

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 392 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 330mW (Ta)
• Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-523
• Package / Case: SOT-523

パッケージ: -

AP3970P7-G1

Diodes Incorporated

IC REG ACDC PSR SWITCH

• Output Isolation: Isolated
• Internal Switch(s): Yes
• Voltage - Breakdown: 700V
• Topology: Flyback
• Voltage - Start Up: 15 V
• Voltage - Supply (Vcc/Vdd): 5.3V ~ 22V
• Duty Cycle: -
• Frequency - Switching: 60kHz
• Power (Watts): 12 W
• Fault Protection: Over Temperature, Short Circuit
• Control Features: -
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
• Supplier Device Package: 7-PDIP
• Mounting Type: Through Hole

パッケージ: -

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DMT67M8LCGQ-7

Diodes Incorporated

MOSFET N-CH 60V 16A/64.6A 8DFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 64.6A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 30 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 900mW (Tc)
• Rds On (Max) @ Id, Vgs: 5.7mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: V-DFN3333-8 (Type B)
• Package / Case: 8-PowerVDFN

パッケージ: -

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BZT52C16LPQ-7

Diodes Incorporated

DIODE ZENER 16V 250MW 2DFN

• Voltage - Zener (Nom) (Vz): 16 V
• Tolerance: ±5.62%
• Power - Max: 250 mW
• Impedance (Max) (Zzt): 40 Ohms
• Current - Reverse Leakage @ Vr: 100 nA @ 11.2 V
• Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 0402 (1006 Metric)
• Supplier Device Package: X1-DFN1006-2

パッケージ: -

DMP4026SFVWQ-13

Diodes Incorporated

MOSFET BVDSS: 31V~40V POWERDI333

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 49A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1.8V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 45.8 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2064 pF @ 20 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.6W (Ta)
• Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount, Wettable Flank
• Supplier Device Package: PowerDI3333-8 (SWP) Type UX
• Package / Case: 8-PowerVDFN

パッケージ: -

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BSS138W-7-F-79

Diodes Incorporated

DIODE

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 50 V
• Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 200mW (Ta)
• Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-323
• Package / Case: SC-70, SOT-323

パッケージ: -

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ADTA113ZUAQ-7

Diodes Incorporated

TRANS PREBIAS NPN 50V SOT323

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): 1 kOhms
• Resistor - Emitter Base (R2) (Ohms): 10 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250 MHz
• Power - Max: 310 mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323

パッケージ: -

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T12M5T600B

Diodes Incorporated

THYRISTOR TO220AB TUBE 50PCS

• Voltage - Off State: -
• Voltage - Gate Trigger (Vgt) (Max): -
• Current - Gate Trigger (Igt) (Max): -
• Voltage - On State (Vtm) (Max): -
• Current - On State (It (AV)) (Max): -
• Current - On State (It (RMS)) (Max): -
• Current - Hold (Ih) (Max): -
• Current - Off State (Max): -
• Current - Non Rep. Surge 50, 60Hz (Itsm): -
• SCR Type: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

MMBZ5259BT-7-G

Diodes Incorporated

DIODE ZENER SOT523

• Voltage - Zener (Nom) (Vz): -
• Tolerance: -
• Power - Max: -
• Impedance (Max) (Zzt): -
• Current - Reverse Leakage @ Vr: -
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

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DMN2058UW-13

Diodes Incorporated

MOSFET N-CH 20V 3.5A SOT323 T&R

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
• Vgs(th) (Max) @ Id: 1.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 281 pF @ 10 V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 500mW (Ta)
• Rds On (Max) @ Id, Vgs: 42mOhm @ 3A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-323
• Package / Case: SC-70, SOT-323

パッケージ: -