ページ 638 - Diodes Incorporated 製品

部品番号	メーカ	説明	パッケージ	在庫
FNC500135	Diodes Incorporated	OSC XO 125.004MHZ CMOS SMD Type: XO (Standard) Frequency: 125.004MHz Function: Enable/Disable Output: CMOS Voltage - Supply: 1.8V Frequency Stability: ±50ppm Operating Temperature: -20°C ~ 70°C Current - Supply (Max): 40mA Ratings: - Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm) Height - Seated (Max): 0.071" (1.80mm)	パッケージ: 4-SMD, No Lead	在庫7,542
ZXMN3A06DN8TC	Diodes Incorporated	MOSFET 2N-CH 30V 4.9A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.9A Rds On (Max) @ Id, Vgs: 35 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V Power - Max: 1.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫363,912
DMN3055LFDB-13	Diodes Incorporated	MOSFET BVDSS: 25V 30V U-DFN2020- FET Type: 2 N-Channel FET Feature: Standard Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 40 mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 458pF @ 15V Power - Max: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	パッケージ: 6-UDFN Exposed Pad	在庫4,960
2DD1664Q-13	Diodes Incorporated	TRANS NPN 32V 1A SOT89-3 Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 32V Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V Power - Max: 1W Frequency - Transition: 280MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89-3	パッケージ: TO-243AA	在庫322,380
MMST4403-7-F	Diodes Incorporated	TRANS PNP 40V 0.6A SC70-3 Transistor Type: PNP Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Power - Max: 200mW Frequency - Transition: 200MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	パッケージ: SC-70, SOT-323	在庫36,000
MBR1660	Diodes Incorporated	DIODE SCHOTTKY 60V 16A TO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 750mV @ 16A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 60V Capacitance @ Vr, F: 450pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 150°C	パッケージ: TO-220-2	在庫219,396
LL4154-7	Diodes Incorporated	DIODE GEN 25V 150MA MINI MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 25V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 1V @ 30mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 100nA @ 25V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Supplier Device Package: Mini MELF Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: DO-213AC, MINI-MELF, SOD-80	在庫7,312
B1100-13-F	Diodes Incorporated	DIODE SCHOTTKY 100V 1A SMA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 790mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 100V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -65°C ~ 150°C	パッケージ: DO-214AC, SMA	在庫1,685,244
US1J-13-F	Diodes Incorporated	DIODE GEN PURP 600V 1A SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -65°C ~ 150°C	パッケージ: DO-214AC, SMA	在庫824,556
MBR2045CTP	Diodes Incorporated	DIODE ARRAY SCHOTTKY 45V ITO220S Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io) (per Diode): 10A Voltage - Forward (Vf) (Max) @ If: 650mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 45V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Through Hole Package / Case: TO-220-3 Isolated Tab Supplier Device Package: ITO-220S	パッケージ: TO-220-3 Isolated Tab	在庫16,044
AP2127N-1.0TRG1	Diodes Incorporated	IC REG LINEAR 300MA SOT23 Output Configuration: - Output Type: - Number of Regulators: 1 Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 300mA Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	パッケージ: TO-236-3, SC-59, SOT-23-3	在庫7,344
ZR431LC02STOB	Diodes Incorporated	IC VREF SHUNT ADJ TO92-3 Reference Type: Shunt Output Type: Adjustable Voltage - Output (Min/Fixed): 1.24V Voltage - Output (Max): 10V Current - Output: 25mA Tolerance: ±2.5% Temperature Coefficient: 50ppm/°C Noise - 0.1Hz to 10Hz: - Noise - 10Hz to 10kHz: - Voltage - Input: - Current - Supply: - Current - Cathode: 100µA Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	パッケージ: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	在庫5,264
PT7M6126NLTA3EX	Diodes Incorporated	IC SUPERVSOR 2.6V SOT23-3 Type: Simple Reset/Power-On Reset Number of Voltages Monitored: 1 Output: Open Drain or Open Collector Reset: Active Low Reset Timeout: 200 µs Maximum Voltage - Threshold: 2.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	パッケージ: TO-236-3, SC-59, SOT-23-3	在庫7,056
AP2820DMMTR-G1	Diodes Incorporated	IC USB POWER SWITCH 8-MSOP Switch Type: USB Switch Number of Outputs: 1 Ratio - Input:Output: 1:1 Output Configuration: High Side Output Type: N-Channel Interface: On/Off Voltage - Load: 2.7 V ~ 5.5 V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2A Rds On (Typ): 60 mOhm Input Type: Non-Inverting Features: Status Flag Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: 8-MSOP	パッケージ: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	在庫11,928
AS358AMTR-E1	Diodes Incorporated	IC OPAMP GEN PURP 8-SO Amplifier Type: General Purpose Number of Circuits: 2 Output Type: - Slew Rate: - Gain Bandwidth Product: - -3db Bandwidth: - Current - Input Bias: 20nA Voltage - Input Offset: 2mV Current - Supply: 700µA Current - Output / Channel: 40mA Voltage - Supply, Single/Dual (±): 3 V ~ 36 V, ±1.5 V ~ 18 V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫389,868
PI90LVB022L	Diodes Incorporated	IC MULTIPLEXER LVDS 1CH 16TSSOP Type: Buffer, Multiplexer Applications: LVDS Input: LVDS Output: LVDS Data Rate (Max): 650Mbps Number of Channels: 1 x 2:2 Delay Time: 4.0ns Signal Conditioning: - Capacitance - Input: 8pF Voltage - Supply: 3 V ~ 3.6 V Current - Supply: 21mA Operating Temperature: -40°C ~ 85°C Mounting Type: - Package / Case: 16-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 16-TSSOP	パッケージ: 16-TSSOP (0.173", 4.40mm Width)	在庫5,376
PI3EQX8908A1ZFE	Diodes Incorporated	IC REDRIVER 8-CHAN PCIE3.0 54TQF Type: Buffer, ReDriver Applications: PCIe Input: - Output: - Data Rate (Max): 8Gbps Number of Channels: 8 Delay Time: - Signal Conditioning: Input Equalization, Output De-Emphasis Capacitance - Input: - Voltage - Supply: 3 V ~ 3.6 V Current - Supply: - Operating Temperature: - Mounting Type: - Package / Case: 54-WFQFN Exposed Pad Supplier Device Package: 54-TQFN (10x5.5)	パッケージ: 54-WFQFN Exposed Pad	在庫5,472
AP2401B14KTR-E1	Diodes Incorporated	IC CURRENT LIMIT SWITCH Switch Type: - Number of Outputs: - Ratio - Input:Output: - Output Configuration: - Output Type: - Interface: - Voltage - Load: - Voltage - Supply (Vcc/Vdd): - Current - Output (Max): - Rds On (Typ): - Input Type: - Features: - Fault Protection: - Operating Temperature: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫42,000
AP7354-28FS4-7	Diodes Incorporated	LDO CMOS LOWCURR X2-DFN1010-4 Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 2.8V Voltage - Output (Max): - Voltage Dropout (Max): 0.4V @ 150mA Current - Output: 150mA Current - Quiescent (Iq): 0.6µA Current - Supply (Max): - PSRR: - Control Features: Enable Protection Features: Over Current Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 4-XDFN Exposed Pad Supplier Device Package: X2-DFN1010-4	パッケージ: 4-XDFN Exposed Pad	在庫6,800
ZXCT213CDSJ-7	Diodes Incorporated	CM VOLTAGE OUTPUT U-QFN1418-10 T Function: Current Monitor Sensing Method: High/Low-Side Accuracy: ±0.5% Voltage - Input: 2.7V ~ 26V Current - Output: - Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 10-UFQFN Supplier Device Package: U-QFN1418-10	パッケージ: -	在庫9,000
UMC5NQ-7	Diodes Incorporated	PREBIASTRANSISTORSOT353 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): - Resistor - Base (R1) (Ohms): 47kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): - Frequency - Transition: 250MHz Power - Max: 290mW Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Supplier Device Package: SOT-353	パッケージ: -	在庫17,994
DMN3009LFVQ-13	Diodes Incorporated	MOSFET BVDSS: 25V~30V POWERDI333 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: PowerDI3333-8 (SWP) Type UX Package / Case: 8-PowerVDFN	パッケージ: -	Request a Quote
DMC62D2SV-13	Diodes Incorporated	MOSFET N/P-CH 60V 0.48A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 480mA (Ta), 320mA (Ta) Rds On (Max) @ Id, Vgs: 1.7Ohm @ 200mA, 10V, 4Ohm @ 200mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.04nC @ 10V, 1.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V, 40pF @ 25V Power - Max: 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	パッケージ: -	Request a Quote
AP7361EA-33ER-13	Diodes Incorporated	LDO CMOS HICURR SOT223 T&R 2.5K Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 6V Voltage - Output (Min/Fixed): 3.3V Voltage - Output (Max): - Voltage Dropout (Max): 0.5V @ 1A Current - Output: 1A Current - Quiescent (Iq): 91 µA Current - Supply (Max): - PSRR: - Control Features: Current Limit Protection Features: Over Current, Over Temperature, Short Circuit Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223R	パッケージ: -	在庫22,350
DMT6011LPDW-13	Diodes Incorporated	MOSFET 2N-CH 60V 10.3A POWERDI50 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1072pF @ 30V Power - Max: 2.5W (Ta), 37.9W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8 (Type UXD)	パッケージ: -	Request a Quote
74AHCT1G00QSE-7	Diodes Incorporated	IC GATE NAND 1CH 2-INP SOT353 Logic Type: NAND Gate Number of Circuits: 1 Number of Inputs: 2 Features: - Voltage - Supply: 4.5V ~ 5.5V Current - Quiescent (Max): 1 µA Current - Output High, Low: 8mA, 8mA Logic Level - Low: 0.8V Logic Level - High: 2V Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Supplier Device Package: SOT-353 Package / Case: 5-TSSOP, SC-70-5, SOT-353	パッケージ: -	在庫5,352
S1MSWFMQ-7	Diodes Incorporated	DIODE GEN PURP 1KV 1A SOD123F Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.2 µs Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Capacitance @ Vr, F: 2.8pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123F Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: -	在庫24,849
DMT10H009LCG-7	Diodes Incorporated	MOSFET N-CH 100V 12.4A/47A 8DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: V-DFN3333-8 (Type B) Package / Case: 8-PowerVDFN	パッケージ: -	在庫9,426

FNC500135

Diodes Incorporated

OSC XO 125.004MHZ CMOS SMD

Type: XO (Standard)
Frequency: 125.004MHz
Function: Enable/Disable
Output: CMOS
Voltage - Supply: 1.8V
Frequency Stability: ±50ppm
Operating Temperature: -20°C ~ 70°C
Current - Supply (Max): 40mA
Ratings: -
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Height - Seated (Max): 0.071" (1.80mm)

パッケージ: 4-SMD, No Lead

在庫7,542

ZXMN3A06DN8TC

Diodes Incorporated

MOSFET 2N-CH 30V 4.9A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Rds On (Max) @ Id, Vgs: 35 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V
Power - Max: 1.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫363,912

DMN3055LFDB-13

Diodes Incorporated

MOSFET BVDSS: 25V 30V U-DFN2020-

FET Type: 2 N-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 40 mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 458pF @ 15V
Power - Max: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type B)

パッケージ: 6-UDFN Exposed Pad

在庫4,960

2DD1664Q-13

Diodes Incorporated

TRANS NPN 32V 1A SOT89-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 32V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Power - Max: 1W
Frequency - Transition: 280MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89-3

パッケージ: TO-243AA

在庫322,380

MMST4403-7-F

Diodes Incorporated

TRANS PNP 40V 0.6A SC70-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Power - Max: 200mW
Frequency - Transition: 200MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

パッケージ: SC-70, SOT-323

在庫36,000

MBR1660

Diodes Incorporated

DIODE SCHOTTKY 60V 16A TO220AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 750mV @ 16A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 60V
Capacitance @ Vr, F: 450pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C

パッケージ: TO-220-2

在庫219,396

LL4154-7

Diodes Incorporated

DIODE GEN 25V 150MA MINI MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 25V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 30mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 100nA @ 25V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: Mini MELF
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: DO-213AC, MINI-MELF, SOD-80

在庫7,312

B1100-13-F

Diodes Incorporated

DIODE SCHOTTKY 100V 1A SMA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 790mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 100V
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C

パッケージ: DO-214AC, SMA

在庫1,685,244

US1J-13-F

Diodes Incorporated

DIODE GEN PURP 600V 1A SMA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C

パッケージ: DO-214AC, SMA

在庫824,556

MBR2045CTP

Diodes Incorporated

DIODE ARRAY SCHOTTKY 45V ITO220S

Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io) (per Diode): 10A
Voltage - Forward (Vf) (Max) @ If: 650mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 45V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-220-3 Isolated Tab
Supplier Device Package: ITO-220S

パッケージ: TO-220-3 Isolated Tab

在庫16,044

AP2127N-1.0TRG1

Diodes Incorporated

IC REG LINEAR 300MA SOT23

Output Configuration: -
Output Type: -
Number of Regulators: 1
Voltage - Input (Max): -
Voltage - Output (Min/Fixed): -
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 300mA
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: -
Control Features: -
Protection Features: -
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

パッケージ: TO-236-3, SC-59, SOT-23-3

在庫7,344

ZR431LC02STOB

Diodes Incorporated

IC VREF SHUNT ADJ TO92-3

Reference Type: Shunt
Output Type: Adjustable
Voltage - Output (Min/Fixed): 1.24V
Voltage - Output (Max): 10V
Current - Output: 25mA
Tolerance: ±2.5%
Temperature Coefficient: 50ppm/°C
Noise - 0.1Hz to 10Hz: -
Noise - 10Hz to 10kHz: -
Voltage - Input: -
Current - Supply: -
Current - Cathode: 100µA
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

パッケージ: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

在庫5,264

PT7M6126NLTA3EX

Diodes Incorporated

IC SUPERVSOR 2.6V SOT23-3

Type: Simple Reset/Power-On Reset
Number of Voltages Monitored: 1
Output: Open Drain or Open Collector
Reset: Active Low
Reset Timeout: 200 µs Maximum
Voltage - Threshold: 2.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

パッケージ: TO-236-3, SC-59, SOT-23-3

在庫7,056

AP2820DMMTR-G1

Diodes Incorporated

IC USB POWER SWITCH 8-MSOP

Switch Type: USB Switch
Number of Outputs: 1
Ratio - Input:Output: 1:1
Output Configuration: High Side
Output Type: N-Channel
Interface: On/Off
Voltage - Load: 2.7 V ~ 5.5 V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Rds On (Typ): 60 mOhm
Input Type: Non-Inverting
Features: Status Flag
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: 8-MSOP

パッケージ: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

在庫11,928

AS358AMTR-E1

Diodes Incorporated

IC OPAMP GEN PURP 8-SO

Amplifier Type: General Purpose
Number of Circuits: 2
Output Type: -
Slew Rate: -
Gain Bandwidth Product: -
-3db Bandwidth: -
Current - Input Bias: 20nA
Voltage - Input Offset: 2mV
Current - Supply: 700µA
Current - Output / Channel: 40mA
Voltage - Supply, Single/Dual (±): 3 V ~ 36 V, ±1.5 V ~ 18 V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫389,868

PI90LVB022L

Diodes Incorporated

IC MULTIPLEXER LVDS 1CH 16TSSOP

Type: Buffer, Multiplexer
Applications: LVDS
Input: LVDS
Output: LVDS
Data Rate (Max): 650Mbps
Number of Channels: 1 x 2:2
Delay Time: 4.0ns
Signal Conditioning: -
Capacitance - Input: 8pF
Voltage - Supply: 3 V ~ 3.6 V
Current - Supply: 21mA
Operating Temperature: -40°C ~ 85°C
Mounting Type: -
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 16-TSSOP

パッケージ: 16-TSSOP (0.173", 4.40mm Width)

在庫5,376

PI3EQX8908A1ZFE

Diodes Incorporated

IC REDRIVER 8-CHAN PCIE3.0 54TQF

Type: Buffer, ReDriver
Applications: PCIe
Input: -
Output: -
Data Rate (Max): 8Gbps
Number of Channels: 8
Delay Time: -
Signal Conditioning: Input Equalization, Output De-Emphasis
Capacitance - Input: -
Voltage - Supply: 3 V ~ 3.6 V
Current - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: 54-WFQFN Exposed Pad
Supplier Device Package: 54-TQFN (10x5.5)

パッケージ: 54-WFQFN Exposed Pad

在庫5,472

AP2401B14KTR-E1

Diodes Incorporated

IC CURRENT LIMIT SWITCH

Switch Type: -
Number of Outputs: -
Ratio - Input:Output: -
Output Configuration: -
Output Type: -
Interface: -
Voltage - Load: -
Voltage - Supply (Vcc/Vdd): -
Current - Output (Max): -
Rds On (Typ): -
Input Type: -
Features: -
Fault Protection: -
Operating Temperature: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫42,000

AP7354-28FS4-7

Diodes Incorporated

LDO CMOS LOWCURR X2-DFN1010-4

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 2.8V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.4V @ 150mA
Current - Output: 150mA
Current - Quiescent (Iq): 0.6µA
Current - Supply (Max): -
PSRR: -
Control Features: Enable
Protection Features: Over Current
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 4-XDFN Exposed Pad
Supplier Device Package: X2-DFN1010-4

パッケージ: 4-XDFN Exposed Pad

在庫6,800

ZXCT213CDSJ-7

Diodes Incorporated

CM VOLTAGE OUTPUT U-QFN1418-10 T

Function: Current Monitor
Sensing Method: High/Low-Side
Accuracy: ±0.5%
Voltage - Input: 2.7V ~ 26V
Current - Output: -
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-UFQFN
Supplier Device Package: U-QFN1418-10

パッケージ: -

在庫9,000

UMC5NQ-7

Diodes Incorporated

PREBIASTRANSISTORSOT353

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): -
Resistor - Base (R1) (Ohms): 47kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): -
Frequency - Transition: 250MHz
Power - Max: 290mW
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package: SOT-353

パッケージ: -

在庫17,994

DMN3009LFVQ-13

Diodes Incorporated

MOSFET BVDSS: 25V~30V POWERDI333

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 15 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Package / Case: 8-PowerVDFN

パッケージ: -

Request a Quote

DMC62D2SV-13

Diodes Incorporated

MOSFET N/P-CH 60V 0.48A SOT563

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 480mA (Ta), 320mA (Ta)
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 200mA, 10V, 4Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.04nC @ 10V, 1.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V, 40pF @ 25V
Power - Max: 500mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

パッケージ: -

Request a Quote

AP7361EA-33ER-13

Diodes Incorporated

LDO CMOS HICURR SOT223 T&R 2.5K

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 6V
Voltage - Output (Min/Fixed): 3.3V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.5V @ 1A
Current - Output: 1A
Current - Quiescent (Iq): 91 µA
Current - Supply (Max): -
PSRR: -
Control Features: Current Limit
Protection Features: Over Current, Over Temperature, Short Circuit
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223R

パッケージ: -

在庫22,350

DMT6011LPDW-13

Diodes Incorporated

MOSFET 2N-CH 60V 10.3A POWERDI50

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1072pF @ 30V
Power - Max: 2.5W (Ta), 37.9W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerDI5060-8 (Type UXD)

パッケージ: -

Request a Quote

74AHCT1G00QSE-7

Diodes Incorporated

IC GATE NAND 1CH 2-INP SOT353

Logic Type: NAND Gate
Number of Circuits: 1
Number of Inputs: 2
Features: -
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Max): 1 µA
Current - Output High, Low: 8mA, 8mA
Logic Level - Low: 0.8V
Logic Level - High: 2V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Supplier Device Package: SOT-353
Package / Case: 5-TSSOP, SC-70-5, SOT-353

パッケージ: -

在庫5,352

S1MSWFMQ-7

Diodes Incorporated

DIODE GEN PURP 1KV 1A SOD123F

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Capacitance @ Vr, F: 2.8pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: -

在庫24,849

DMT10H009LCG-7

Diodes Incorporated

MOSFET N-CH 100V 12.4A/47A 8DFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: V-DFN3333-8 (Type B)
Package / Case: 8-PowerVDFN

パッケージ: -

在庫9,426