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AUIRFSL4310

Infineon Technologies

MOSFET N-CH 100V 75A TO262

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7670pF @ 50V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 7 mOhm @ 75A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-262
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

パッケージ: TO-262-3 Long Leads, I2Pak, TO-262AA

在庫6,144

MOSFET (Metal Oxide)

100V

75A (Tc)

-

4V @ 250µA

250nC @ 10V

7670pF @ 50V

-

300W (Tc)

7 mOhm @ 75A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-262

TO-262-3 Long Leads, I2Pak, TO-262AA

IRF7455

Infineon Technologies

MOSFET N-CH 30V 15A 8-SOIC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 3480pF @ 25V
Vgs (Max): ±12V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 15A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫16,896

MOSFET (Metal Oxide)

30V

15A (Ta)

2.8V, 10V

2V @ 250µA

56nC @ 5V

3480pF @ 25V

±12V

-

2.5W (Ta)

7.5 mOhm @ 15A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-SO

8-SOIC (0.154", 3.90mm Width)

AUIRLS4030TRL

Infineon Technologies

MOSFET N-CH 100V 180A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 11360pF @ 50V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 370W (Tc)
Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 110A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

在庫4,816

MOSFET (Metal Oxide)

100V

180A (Tc)

4.5V, 10V

2.5V @ 250µA

130nC @ 4.5V

11360pF @ 50V

±16V

-

370W (Tc)

4.3 mOhm @ 110A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

D2PAK

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IPP65R150CFDAAKSA1

Infineon Technologies

MOSFET N-CH 650V TO-220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2340pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 195.3W (Tc)
Rds On (Max) @ Id, Vgs: 150 mOhm @ 9.3A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO-220-3
Package / Case: TO-220-3

パッケージ: TO-220-3

在庫6,304

MOSFET (Metal Oxide)

650V

22.4A (Tc)

10V

4.5V @ 900µA

86nC @ 10V

2340pF @ 100V

±20V

-

195.3W (Tc)

150 mOhm @ 9.3A, 10V

-40°C ~ 150°C (TJ)

Through Hole

PG-TO-220-3

TO-220-3

SPA20N60CFDXKSA1

Infineon Technologies

MOSFET N-CH 600V 20.7A TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 124nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 220 mOhm @ 13.1A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-FP
Package / Case: TO-220-3 Full Pack

パッケージ: TO-220-3 Full Pack

在庫6,512

MOSFET (Metal Oxide)

600V

20.7A (Tc)

10V

5V @ 1mA

124nC @ 10V

2400pF @ 25V

±20V

-

35W (Tc)

220 mOhm @ 13.1A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO220-FP

TO-220-3 Full Pack

SPP20N60CFDXKSA1

Infineon Technologies

MOSFET N-CH 650V 20.7A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 124nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 220 mOhm @ 13.1A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-1
Package / Case: TO-220-3

パッケージ: TO-220-3

在庫2,192

MOSFET (Metal Oxide)

650V

20.7A (Tc)

10V

5V @ 1mA

124nC @ 10V

2400pF @ 25V

±20V

-

208W (Tc)

220 mOhm @ 13.1A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO220-3-1

TO-220-3

IPP60R120C7XKSA1

Infineon Technologies

MOSFET N-CH 600V 19A TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 390µA
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 400V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 92W (Tc)
Rds On (Max) @ Id, Vgs: 120 mOhm @ 7.8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO-220-3
Package / Case: TO-220-3

パッケージ: TO-220-3

在庫6,752

MOSFET (Metal Oxide)

600V

19A (Tc)

10V

4V @ 390µA

34nC @ 10V

1500pF @ 400V

±20V

-

92W (Tc)

120 mOhm @ 7.8A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO-220-3

TO-220-3

IPA60R120C7XKSA1

Infineon Technologies

MOSFET N-CH 600V 11A TO220FP-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 390µA
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 400V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 32W (Tc)
Rds On (Max) @ Id, Vgs: 120 mOhm @ 7.8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220 Full Pack
Package / Case: TO-220-3 Full Pack

パッケージ: TO-220-3 Full Pack

在庫6,352

MOSFET (Metal Oxide)

600V

11A (Tc)

10V

4V @ 390µA

34nC @ 10V

1500pF @ 400V

±20V

-

32W (Tc)

120 mOhm @ 7.8A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO220 Full Pack

TO-220-3 Full Pack

AUIRF1324

Infineon Technologies

MOSFET N-CH 24V 195A TO220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 24V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7590pF @ 24V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 195A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

パッケージ: TO-220-3

在庫3,984

MOSFET (Metal Oxide)

24V

195A (Tc)

10V

4V @ 250µA

240nC @ 10V

7590pF @ 24V

±20V

-

300W (Tc)

1.5 mOhm @ 195A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-220AB

TO-220-3

IPP076N15N5AKSA1

Infineon Technologies

MV POWER MOS

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

パッケージ: -

在庫2,080

-

IPI076N15N5AKSA1

Infineon Technologies

MV POWER MOS

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

パッケージ: -

在庫2,256

-

AUIRF7739L2TR

Infineon Technologies

MOSFET N-CH 40V 375A DIRECTFET2

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 270A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 11880pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 1 mOhm @ 160A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DIRECTFET L8
Package / Case: DirectFET? Isometric L8

パッケージ: DirectFET? Isometric L8

在庫3,376

MOSFET (Metal Oxide)

40V

46A (Ta), 270A (Tc)

10V

4V @ 250µA

330nC @ 10V

11880pF @ 25V

±20V

-

3.8W (Ta), 125W (Tc)

1 mOhm @ 160A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

DIRECTFET L8

DirectFET? Isometric L8

IPW65R150CFDFKSA1

Infineon Technologies

MOSFET N-CH 650V TO247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2340pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 195.3W (Tc)
Rds On (Max) @ Id, Vgs: 150 mOhm @ 9.3A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3
Package / Case: TO-247-3

パッケージ: TO-247-3

在庫2,992

MOSFET (Metal Oxide)

650V

22.4A (Tc)

10V

4.5V @ 900µA

86nC @ 10V

2340pF @ 100V

±20V

-

195.3W (Tc)

150 mOhm @ 9.3A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO247-3

TO-247-3

IPB032N10N5ATMA1

Infineon Technologies

DIFFERENTIATED MOSFETS

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

パッケージ: -

在庫5,824

-

IPC302N12N3X1SA1

Infineon Technologies

MOSFET N-CH 120V BARE DIE

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 120V
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 275µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: Sawn on foil
Package / Case: Die

パッケージ: Die

在庫2,800

MOSFET (Metal Oxide)

120V

1A (Tj)

10V

4V @ 275µA

-

100 mOhm @ 2A, 10V

-

Surface Mount

Sawn on foil

Die

AUIRF2907ZS7PTL

Infineon Technologies

MOSFET N-CH 75V 180A D2PAK-7

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7580pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 110A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK (7-Lead)
Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

パッケージ: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

在庫6,368

MOSFET (Metal Oxide)

75V

180A (Tc)

10V

4V @ 250µA

260nC @ 10V

7580pF @ 25V

±20V

-

300W (Tc)

3.8 mOhm @ 110A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

D2PAK (7-Lead)

TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

SPI20N60C3XKSA1

Infineon Technologies

MOSFET N-CH 650V 20.7A TO-262

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 190 mOhm @ 13.1A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO262-3-1
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

パッケージ: TO-262-3 Long Leads, I2Pak, TO-262AA

在庫6,080

MOSFET (Metal Oxide)

650V

20.7A (Tc)

10V

3.9V @ 1mA

114nC @ 10V

2400pF @ 25V

±20V

-

208W (Tc)

190 mOhm @ 13.1A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO262-3-1

TO-262-3 Long Leads, I2Pak, TO-262AA

AUIRF8739L2TR

Infineon Technologies

MOSFET N-CH 40V 545A AUTO

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 57A (Ta), 545A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 562nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 17890pF @ 25V
Vgs (Max): 40V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 340W (Tc)
Rds On (Max) @ Id, Vgs: 0.6 mOhm @ 195A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DIRECTFET L8
Package / Case: DirectFET? Isometric L8

パッケージ: DirectFET? Isometric L8

在庫7,616

MOSFET (Metal Oxide)

40V

57A (Ta), 545A (Tc)

10V

3.9V @ 250µA

562nC @ 10V

17890pF @ 25V

40V

-

3.8W (Ta), 340W (Tc)

0.6 mOhm @ 195A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

DIRECTFET L8

DirectFET? Isometric L8

SIPC19N80C3X1SA1

Infineon Technologies

TRANSISTOR N-CH

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

パッケージ: -

在庫5,728

-

IPW65R190E6FKSA1

Infineon Technologies

MOSFET N-CH 650V 20.2A TO247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 730µA
Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1620pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 151W (Tc)
Rds On (Max) @ Id, Vgs: 190 mOhm @ 7.3A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3
Package / Case: TO-247-3

パッケージ: TO-247-3

在庫2,128

MOSFET (Metal Oxide)

650V

20.2A (Tc)

10V

3.5V @ 730µA

73nC @ 10V

1620pF @ 100V

±20V

-

151W (Tc)

190 mOhm @ 7.3A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO247-3

TO-247-3

IPW65R190C6FKSA1

Infineon Technologies

MOSFET N-CH 650V 20.2A TO247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 730µA
Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1620pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 151W (Tc)
Rds On (Max) @ Id, Vgs: 190 mOhm @ 7.3A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3
Package / Case: TO-247-3

パッケージ: TO-247-3

在庫2,192

MOSFET (Metal Oxide)

650V

20.2A (Tc)

10V

3.5V @ 730µA

73nC @ 10V

1620pF @ 100V

±20V

-

151W (Tc)

190 mOhm @ 7.3A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO247-3

TO-247-3

AUIRFB3207

Infineon Technologies

MOSFET N-CH 75V 75A TO220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 50V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 75A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

パッケージ: TO-220-3

在庫87,948

MOSFET (Metal Oxide)

75V

75A (Tc)

10V

4V @ 250µA

260nC @ 10V

7600pF @ 50V

±20V

-

300W (Tc)

4.5 mOhm @ 75A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-220AB

TO-220-3

AUIRF3805L

Infineon Technologies

MOSFET N-CH 55V 160A TO262

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 290nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7960pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 75A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-262
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

パッケージ: TO-262-3 Long Leads, I2Pak, TO-262AA

在庫5,232

MOSFET (Metal Oxide)

55V

160A (Tc)

10V

4V @ 250µA

290nC @ 10V

7960pF @ 25V

±20V

-

300W (Tc)

3.3 mOhm @ 75A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-262

TO-262-3 Long Leads, I2Pak, TO-262AA

IPB083N15N5LFATMA1

Infineon Technologies

DIFFERENTIATED MOSFETS

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

パッケージ: -

在庫5,104

-

IPW65R190C7XKSA1

Infineon Technologies

MOSFET N-CH 650V 20.2A TO247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 290µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 400V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 72W (Tc)
Rds On (Max) @ Id, Vgs: 190 mOhm @ 5.7A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3
Package / Case: TO-247-3

パッケージ: TO-247-3

在庫3,632

MOSFET (Metal Oxide)

650V

13A (Tc)

10V

4V @ 290µA

23nC @ 10V

1150pF @ 400V

±20V

-

72W (Tc)

190 mOhm @ 5.7A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO247-3

TO-247-3

SPW11N60CFDFKSA1

Infineon Technologies

MOSFET N-CH 650V 11A TO-247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 440 mOhm @ 7A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3
Package / Case: TO-247-3

パッケージ: TO-247-3

在庫2,528

MOSFET (Metal Oxide)

650V

11A (Tc)

10V

5V @ 500µA

64nC @ 10V

1200pF @ 25V

±20V

-

125W (Tc)

440 mOhm @ 7A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO247-3

TO-247-3

IPP034N08N5AKSA1

Infineon Technologies

MOSFET N-CH TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.8V @ 108µA
Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6240pF @ 40V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO-220-3
Package / Case: TO-220-3

パッケージ: TO-220-3

在庫5,488

MOSFET (Metal Oxide)

80V

120A (Tc)

6V, 10V

3.8V @ 108µA

87nC @ 10V

6240pF @ 40V

±20V

-

167W (Tc)

3.4 mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO-220-3

TO-220-3

IPI50R140CPXKSA1

Infineon Technologies

HIGH POWER_LEGACY

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

パッケージ: -

在庫7,200

-

部品番号	メーカ	説明	パッケージ	在庫	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
AUIRFSL4310	Infineon Technologies	MOSFET N-CH 100V 75A TO262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7670pF @ 50V Vgs (Max): - FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	パッケージ: TO-262-3 Long Leads, I2Pak, TO-262AA	在庫6,144	MOSFET (Metal Oxide)	100V	75A (Tc)	-	4V @ 250µA	250nC @ 10V	7670pF @ 50V	-	-	300W (Tc)	7 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
IRF7455	Infineon Technologies	MOSFET N-CH 30V 15A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 3480pF @ 25V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫16,896	MOSFET (Metal Oxide)	30V	15A (Ta)	2.8V, 10V	2V @ 250µA	56nC @ 5V	3480pF @ 25V	±12V	-	2.5W (Ta)	7.5 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
AUIRLS4030TRL	Infineon Technologies	MOSFET N-CH 100V 180A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 11360pF @ 50V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 370W (Tc) Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 110A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	在庫4,816	MOSFET (Metal Oxide)	100V	180A (Tc)	4.5V, 10V	2.5V @ 250µA	130nC @ 4.5V	11360pF @ 50V	±16V	-	370W (Tc)	4.3 mOhm @ 110A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPP65R150CFDAAKSA1	Infineon Technologies	MOSFET N-CH 650V TO-220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 900µA Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2340pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 195.3W (Tc) Rds On (Max) @ Id, Vgs: 150 mOhm @ 9.3A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	パッケージ: TO-220-3	在庫6,304	MOSFET (Metal Oxide)	650V	22.4A (Tc)	10V	4.5V @ 900µA	86nC @ 10V	2340pF @ 100V	±20V	-	195.3W (Tc)	150 mOhm @ 9.3A, 10V	-40°C ~ 150°C (TJ)	Through Hole	PG-TO-220-3	TO-220-3
SPA20N60CFDXKSA1	Infineon Technologies	MOSFET N-CH 600V 20.7A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 124nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 220 mOhm @ 13.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	パッケージ: TO-220-3 Full Pack	在庫6,512	MOSFET (Metal Oxide)	600V	20.7A (Tc)	10V	5V @ 1mA	124nC @ 10V	2400pF @ 25V	±20V	-	35W (Tc)	220 mOhm @ 13.1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-FP	TO-220-3 Full Pack
SPP20N60CFDXKSA1	Infineon Technologies	MOSFET N-CH 650V 20.7A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 124nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 220 mOhm @ 13.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	パッケージ: TO-220-3	在庫2,192	MOSFET (Metal Oxide)	650V	20.7A (Tc)	10V	5V @ 1mA	124nC @ 10V	2400pF @ 25V	±20V	-	208W (Tc)	220 mOhm @ 13.1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
IPP60R120C7XKSA1	Infineon Technologies	MOSFET N-CH 600V 19A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 390µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 400V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 92W (Tc) Rds On (Max) @ Id, Vgs: 120 mOhm @ 7.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	パッケージ: TO-220-3	在庫6,752	MOSFET (Metal Oxide)	600V	19A (Tc)	10V	4V @ 390µA	34nC @ 10V	1500pF @ 400V	±20V	-	92W (Tc)	120 mOhm @ 7.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO-220-3	TO-220-3
IPA60R120C7XKSA1	Infineon Technologies	MOSFET N-CH 600V 11A TO220FP-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 390µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 400V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 32W (Tc) Rds On (Max) @ Id, Vgs: 120 mOhm @ 7.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	パッケージ: TO-220-3 Full Pack	在庫6,352	MOSFET (Metal Oxide)	600V	11A (Tc)	10V	4V @ 390µA	34nC @ 10V	1500pF @ 400V	±20V	-	32W (Tc)	120 mOhm @ 7.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220 Full Pack	TO-220-3 Full Pack
AUIRF1324	Infineon Technologies	MOSFET N-CH 24V 195A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7590pF @ 24V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 195A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	パッケージ: TO-220-3	在庫3,984	MOSFET (Metal Oxide)	24V	195A (Tc)	10V	4V @ 250µA	240nC @ 10V	7590pF @ 24V	±20V	-	300W (Tc)	1.5 mOhm @ 195A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IPP076N15N5AKSA1	Infineon Technologies	MV POWER MOS FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	パッケージ: -	在庫2,080	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPI076N15N5AKSA1	Infineon Technologies	MV POWER MOS FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	パッケージ: -	在庫2,256	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AUIRF7739L2TR	Infineon Technologies	MOSFET N-CH 40V 375A DIRECTFET2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 270A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11880pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 1 mOhm @ 160A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET L8 Package / Case: DirectFET? Isometric L8	パッケージ: DirectFET? Isometric L8	在庫3,376	MOSFET (Metal Oxide)	40V	46A (Ta), 270A (Tc)	10V	4V @ 250µA	330nC @ 10V	11880pF @ 25V	±20V	-	3.8W (Ta), 125W (Tc)	1 mOhm @ 160A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DIRECTFET L8	DirectFET? Isometric L8
IPW65R150CFDFKSA1	Infineon Technologies	MOSFET N-CH 650V TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 900µA Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2340pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 195.3W (Tc) Rds On (Max) @ Id, Vgs: 150 mOhm @ 9.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	パッケージ: TO-247-3	在庫2,992	MOSFET (Metal Oxide)	650V	22.4A (Tc)	10V	4.5V @ 900µA	86nC @ 10V	2340pF @ 100V	±20V	-	195.3W (Tc)	150 mOhm @ 9.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
IPB032N10N5ATMA1	Infineon Technologies	DIFFERENTIATED MOSFETS FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	パッケージ: -	在庫5,824	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPC302N12N3X1SA1	Infineon Technologies	MOSFET N-CH 120V BARE DIE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120V Current - Continuous Drain (Id) @ 25°C: 1A (Tj) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 275µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: Sawn on foil Package / Case: Die	パッケージ: Die	在庫2,800	MOSFET (Metal Oxide)	120V	1A (Tj)	10V	4V @ 275µA	-	-	-	-	-	100 mOhm @ 2A, 10V	-	Surface Mount	Sawn on foil	Die
AUIRF2907ZS7PTL	Infineon Technologies	MOSFET N-CH 75V 180A D2PAK-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7580pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 110A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	パッケージ: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	在庫6,368	MOSFET (Metal Oxide)	75V	180A (Tc)	10V	4V @ 250µA	260nC @ 10V	7580pF @ 25V	±20V	-	300W (Tc)	3.8 mOhm @ 110A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (7-Lead)	TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
SPI20N60C3XKSA1	Infineon Technologies	MOSFET N-CH 650V 20.7A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 13.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3-1 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	パッケージ: TO-262-3 Long Leads, I2Pak, TO-262AA	在庫6,080	MOSFET (Metal Oxide)	650V	20.7A (Tc)	10V	3.9V @ 1mA	114nC @ 10V	2400pF @ 25V	±20V	-	208W (Tc)	190 mOhm @ 13.1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO262-3-1	TO-262-3 Long Leads, I2Pak, TO-262AA
AUIRF8739L2TR	Infineon Technologies	MOSFET N-CH 40V 545A AUTO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 57A (Ta), 545A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 562nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 17890pF @ 25V Vgs (Max): 40V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 340W (Tc) Rds On (Max) @ Id, Vgs: 0.6 mOhm @ 195A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET L8 Package / Case: DirectFET? Isometric L8	パッケージ: DirectFET? Isometric L8	在庫7,616	MOSFET (Metal Oxide)	40V	57A (Ta), 545A (Tc)	10V	3.9V @ 250µA	562nC @ 10V	17890pF @ 25V	40V	-	3.8W (Ta), 340W (Tc)	0.6 mOhm @ 195A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DIRECTFET L8	DirectFET? Isometric L8
SIPC19N80C3X1SA1	Infineon Technologies	TRANSISTOR N-CH FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	パッケージ: -	在庫5,728	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPW65R190E6FKSA1	Infineon Technologies	MOSFET N-CH 650V 20.2A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 730µA Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1620pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 151W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 7.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	パッケージ: TO-247-3	在庫2,128	MOSFET (Metal Oxide)	650V	20.2A (Tc)	10V	3.5V @ 730µA	73nC @ 10V	1620pF @ 100V	±20V	-	151W (Tc)	190 mOhm @ 7.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
IPW65R190C6FKSA1	Infineon Technologies	MOSFET N-CH 650V 20.2A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 730µA Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1620pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 151W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 7.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	パッケージ: TO-247-3	在庫2,192	MOSFET (Metal Oxide)	650V	20.2A (Tc)	10V	3.5V @ 730µA	73nC @ 10V	1620pF @ 100V	±20V	-	151W (Tc)	190 mOhm @ 7.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
AUIRFB3207	Infineon Technologies	MOSFET N-CH 75V 75A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	パッケージ: TO-220-3	在庫87,948	MOSFET (Metal Oxide)	75V	75A (Tc)	10V	4V @ 250µA	260nC @ 10V	7600pF @ 50V	±20V	-	300W (Tc)	4.5 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
AUIRF3805L	Infineon Technologies	MOSFET N-CH 55V 160A TO262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 290nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7960pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	パッケージ: TO-262-3 Long Leads, I2Pak, TO-262AA	在庫5,232	MOSFET (Metal Oxide)	55V	160A (Tc)	10V	4V @ 250µA	290nC @ 10V	7960pF @ 25V	±20V	-	300W (Tc)	3.3 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
IPB083N15N5LFATMA1	Infineon Technologies	DIFFERENTIATED MOSFETS FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	パッケージ: -	在庫5,104	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPW65R190C7XKSA1	Infineon Technologies	MOSFET N-CH 650V 20.2A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 290µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 400V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 72W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 5.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	パッケージ: TO-247-3	在庫3,632	MOSFET (Metal Oxide)	650V	13A (Tc)	10V	4V @ 290µA	23nC @ 10V	1150pF @ 400V	±20V	-	72W (Tc)	190 mOhm @ 5.7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
SPW11N60CFDFKSA1	Infineon Technologies	MOSFET N-CH 650V 11A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 440 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	パッケージ: TO-247-3	在庫2,528	MOSFET (Metal Oxide)	650V	11A (Tc)	10V	5V @ 500µA	64nC @ 10V	1200pF @ 25V	±20V	-	125W (Tc)	440 mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
IPP034N08N5AKSA1	Infineon Technologies	MOSFET N-CH TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 108µA Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6240pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 167W (Tc) Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	パッケージ: TO-220-3	在庫5,488	MOSFET (Metal Oxide)	80V	120A (Tc)	6V, 10V	3.8V @ 108µA	87nC @ 10V	6240pF @ 40V	±20V	-	167W (Tc)	3.4 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO-220-3	TO-220-3
IPI50R140CPXKSA1	Infineon Technologies	HIGH POWER_LEGACY FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	パッケージ: -	在庫7,200	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-